MRF947T1 equivalent
Abstract: MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L
Text: California Eastern Laboratories CEL / NEC - Complete Cross Reference Manufacturer Part Nbr NEC 2SA1977 NEC 2SA1978 NEC 2SC2351 NEC 2SC3355 NEC 2SC3357 NEC 2SC3545 NEC 2SC3583 NEC 2SC3585 Toshiba Matsushita Matsushita NEC 2SC4093 NEC 2SC4094 NEC 2SC4095 Hitachi
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2SA1977
2SA1978
2SC2351
2SC3355
2SC3357
2SC3545
2SC3583
2SC3585
2SC4093
2SC4094
MRF947T1 equivalent
MRF947T1 equivalent transistor
NJ1006
BFP320
fll120mk
FLL101ME
MGF4919G
fujitsu gaas fet fhx76lp
HPMA-2086
MMBR521L
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PDF
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SMD M05 sot
Abstract: NESG303100G SMD transistor M05 transistor NEC D 882 p m33 tf 130 H02 SOT-363 SMD M05 sot23 UPC8236 T6N 700 NE68000 s-parameters
Text: NEC XXXXXXXXXX NEC RF & Wireless Semiconductors 2008 NEC CEL & NEC CONTENTS California Eastern Laboratories serves designers, OEMs GaAs RFIC Switches 3 and contract manufacturers in the RF & Wireless, Mobile- Small Signal GaAs FETs 4 comm, Multimedia, Broadband Communications, Industrial
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Original
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08/2M
SMD M05 sot
NESG303100G
SMD transistor M05
transistor NEC D 882 p
m33 tf 130
H02 SOT-363
SMD M05 sot23
UPC8236
T6N 700
NE68000 s-parameters
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PDF
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UAA 1006
Abstract: manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71
Text: NEC Offices NEC Electronics Europe GmbH Oberrather Str. 4 D-40472 Düsseldorf, Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 NEC Electronics Italiana S.R.L. Via Fabio Filzi, 25A I-20124 Milano Tel. (02) 66 75 41 Fax (02) 66 75 42 99 NEC Electronics (Germany) GmbH
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D-40472
I-20124
I-00139
D-30177
GB-MK14
D-81925
S-18322
F-78142
E-28007
UAA 1006
manual* cygnus sl 5000
transistor marking T79 ghz
PC1658G
NEC Ga FET marking code T79
gaas fet T79
pc1658
MC-7712
2SC5431
NEC U71
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PDF
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nec book
Abstract: transister relay book NEC RELAY
Text: NEC Semiconductor Data Book List NEC Semiconductor Data Book CD-ROM List April 1999 Following is the list of the Semiconductor Data Books NEC has published. If you need a copy, please ask our sales representative. Title / Items Memory (English / Japanese)
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78K/0S,
78K/0)
16-bit
78K/IV)
32-bit
nec book
transister
relay book
NEC RELAY
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PDF
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NEC 10F
Abstract: low-noise L-band tuner nec mmic Monolithic Amplifier NEC JAPAN TRANSISTORS 1981 nec book
Text: just imagine NEC MUL TI MEDI A NESAT PROCESS nan By utilizing the NESAT NEC Silicon Advanced Technology process, NEC realizes low-noise silicon transistors, high-perform ance silicon m onolithic integrated circuits, as well as in the super high-frequency range high reliability.
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OCR Scan
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devic87
P12647EJ3V0PF00
NEC 10F
low-noise L-band tuner
nec mmic
Monolithic Amplifier NEC
JAPAN TRANSISTORS 1981
nec book
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PDF
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NEC Ga FET marking L
Abstract: tamagawa gaas fet marking B mmic amplifier marking code N5 NE272 FET marking code .N5 ne29200 NE23383B NE292 gaas fet marking a
Text: GET-30749, Revision C NEC NEC Corporation Tamagawa Plant 1753,Shimonumabe, Nakahara-lcu, Kawasaki, Kanagawa, 211-8666 Specification Control Drawing o f Grade L GaAs Devices fo r Satellite Applications Prepared on: September 28,2000 Prepared by: Masahito Kushima
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OCR Scan
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GET-30749,
GET-30749
NE29200
NE674
uPG501B
uPG501P
uPG503B
uPG503P
uPG506B
NEC Ga FET marking L
tamagawa
gaas fet marking B
mmic amplifier marking code N5
NE272
FET marking code .N5
ne29200
NE23383B
NE292
gaas fet marking a
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PDF
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NE1069L-4B
Abstract: NE710
Text: NEC/ CALIFORNIA t4S741M 1SE D NEC r-37'?0 00DlSb3 2 4W, L-S BAND POWER GaAs MESFET NE1069L-4B OUTLINE DIMENSIONS Units in mm FEATURES • CLASS A OPERATION OUTLINE T-38 • HIGH POWER OUTPUT • HIGH GAIN • HIGH POWER ADDED EFFICIENCY • HIGH RELIABILITY
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OCR Scan
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00DlSb3
NE1069L-4B
NE1069L-4B
b4S7414
00G15b4
NE710
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PDF
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Untitled
Abstract: No abstract text available
Text: I ^ NEC • NEC Corporation GaAs MMIC UPG100B,P Low Noise Wide Band Amplifier PHYSICAL DIMENSIONS FEATURES Units in mm UPG100B • ULTRA WIDE BAND: 50 MHz to 3 GHz 1.27 ± 0.1 • LOW NOISE: 2.7 dB TYP at f = 50 MHz to 3 GHz (LEADS 2,4,6,8) 0.6 1.27 + 0.1
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OCR Scan
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UPG100B
UPG100B
3260Jay
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PDF
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2SK571
Abstract: NE720 NE72084 NE72000 NE72089 2SK571 equivalent ga 132 2SK57-1
Text: NEC/ b427mM QQ022TD 317 «NE CC SbE D CALIFORNIA NEC GENERAL PURPOSE GaAs MESFET NE720 SERIES OUTLINE DIMENSIONS FEATURES • LOW COST Units in mm NE72000 (CHIP) (Units In pm) • LOW NOISE FIGURE 0.8 dB at 4 GHz 1.7 dB at 8 GHz i 35 • HIGH ASSOCIATED GAIN
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OCR Scan
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b427mM
QQ022TD
NE720
NE72000
Rn/50
NE72000
2SK571
NE72084
NE72089
2SK571 equivalent
ga 132
2SK57-1
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PDF
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UPG100B
Abstract: UPG100 UPG100P power amplifier s band ghz mhz Low Noise Amplifier 0.5 - 3.0 GHz
Text: I NEC • NEC Corporation GaAs MMIC UPG100B,P Low Noise Wide Band Amplifier PHYSICAL DIMENSIONS FEATURES UPG100B • ULTRA WIDE BAND: 50 MHz to 3 GHz 1.27 + 0.1 • LOW IMOISE: 2.7 dB TYP at f = 50 MHz to 3 GHz Units in mm 1.27 ± 0-1 0 A {LEAD S 1,3,5,7)
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OCR Scan
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UPG100B
3260Jay
UPG100
UPG100P
power amplifier s band ghz mhz
Low Noise Amplifier 0.5 - 3.0 GHz
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PDF
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PA101B
Abstract: PA103 PA104 MICRO-X TRANSISTOR MARK Q6 4 npn transistor ic 14pin upa101g PA102B UPA101 P10944EJ2V0AN00
Text: Application Note HIGH FREQUENCY NPN TRANSISTOR ARRAYS µPA101 µPA102 µPA103 µPA104 Document No. P10944EJ2V0AN00 2nd edition Date Published November 1999 N CP(K) Printed in Japan 1995, 1999 NESAT (NEC Silicon Advanced Technology) is a trademark of NEC Corporation.
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PA101
PA102
PA103
PA104
P10944EJ2V0AN00
PA101B
PA103
PA104
MICRO-X TRANSISTOR MARK Q6
4 npn transistor ic 14pin
upa101g
PA102B
UPA101
P10944EJ2V0AN00
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PDF
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2SK281
Abstract: 203l2 NE218 NE21889 NE21800
Text: NEC/ L427414 OOOlblH Q 1SE D CALIFORNIA NEC T - 3 ,h lS LOW NOISE X-BAND G aAs MESFET NE21800 NE21889 FEATURES DESCRIPTION AND APPLICATIONS • V E R Y H IG H fmax: 60 G H z The NE218 is a 1 pm recessed gate gallium arsenide GaAs n-channel field effect transistor (FET). Offering low noise figure
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OCR Scan
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Lj457414
NE21800
NE21889
NE218
NE21800)
2SK281
203l2
NE21889
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PDF
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2SK425
Abstract: 2sk423 2SK424 2SK530 2SK422 2SK426 2SK407 2SK425-13 2SK428 2SK433
Text: A f m s 2SK406 2SK407 2SK408 2SK409 2SK410 2SK411 2SK412 2SK413 2SK414 2SK415 2SK416 L (S) 2SK417 2SK418 2SK419 2SK420 2SK421 2SK422 2SK423 2SK424 2SK425 2SK426 2SK427 2SK428 2SK429(L)(S) 2SK430(L) (S) 2SK431 ' 2SK433 2SK435 2SK436 2SK437 a NEC NEC U aL BÍL
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OCR Scan
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2SK406
2SK407
2SK408
2SK409
2SK410
2SK531
2SK421
2SK422
2SK423
2SK424
2SK425
2sk423
2SK424
2SK530
2SK422
2SK426
2SK425-13
2SK428
2SK433
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PDF
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NEC RELAY
Abstract: transister NEC fet nec V830 mcu NEC Rambus NEC V810
Text: NEC 半導体データ・ブック一覧表 NEC 半導体データ・ブック CD-ROM 一覧表（1999 年 4 月現在） 現在，NEC では下記の半導体データ・ブック CD-ROM を発行しています。 最寄りの NEC 半導体販売窓口までご請求ください。
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Original
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78K/0S,
78K/0)
16MCU
78K/IV)
32MPU
NEC RELAY
transister
NEC fet
nec V830 mcu
NEC Rambus
NEC V810
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PDF
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2SK571
Abstract: ne72089 ne72084 NE72000 NE72089A 2SK354A 2SK571 equivalent 2SK57-1 NE720 NE7200
Text: NEC/ bM274m SbE D CALIFORNIA NEC OQOaa^D 3*^7 BINEC C T - 3 ,\- z £ GENERAL PURPOSE G aAs MESFET NE720 SERIES OUTLINE DIMENSIONS FEATURES • LO W C O S T Units in mm NE72000 (CHIP) (Units In pm) • LO W N O IS E PIQURE 100- • 0.8 dB at 4 GHz 1.7 dB at 8 GHz
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OCR Scan
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bM274m
0Q022TD
NE720
NE72000)
NE72084
NE72089A)
NE72000
2SK571
ne72089
NE72089A
2SK354A
2SK571 equivalent
2SK57-1
NE7200
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PDF
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6-pin optocoupler
Abstract: No abstract text available
Text: NEC LONG CREEPAGE TYPE HIGH ISOLATION VOLTAGE 6 PIN OPTOCOUPLER PS2651 PS2652L2 FEATURES_ DESCRIPTION_ • PS2651 and PS2652 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon phototransistor
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OCR Scan
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PS2651
PS2652L2
PS2651
PS2652
PS2651L2
PS2652L2
PS2651,
PS2652,
6-pin optocoupler
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PDF
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Untitled
Abstract: No abstract text available
Text: N E C ELECTRONICS INC NEC • 6427525 N E C ~72 ELECTRONICS 72C 09235 INCi D '_TL^ ± r.^ L D F | b 4 5 7 S a S OODTSHS J 4N25 PHOTO COUPLER s in g le t r a n s i s t o r : NEC Electronics Inc. NEPOC SERIES Description Features The' 4N25 is an optically coupled isolator containing a
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OCR Scan
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2500VOc
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PDF
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nec 1441
Abstract: No abstract text available
Text: DATA SHEET_ NEC GaAs INTEGRATED CIRCUIT iuPG172GV PDC1.5GHZ-VARIABLE GAIN PA DRIVER AMPLIFIER DESCRIPTION ¿iPG172GV is a GaAs FET PA driver amplifier with variable gain function which was developed for PDC Personal Digital Cellular application.
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OCR Scan
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iuPG172GV
iPG172GV
IR35-00-3
WS60-00-1
nec 1441
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PDF
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC PHOTOCOUPLER PS2653,PS2654,PS2653L2,PS2654L2 LONG CREEPAGE TYPE HIGH ISOLATION VOLTAGE 6-PIN PHOTOCOUPLER -NEPOC Series- DESCRIPTION The PS2653, PS2654, PS2653L2, PS2564L2 are optically coupled isolators containing a GaAs light emitting diode
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OCR Scan
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PS2653
PS2654
PS2653L2
PS2654L2
PS2653,
PS2654,
PS2653L2,
PS2564L2
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PDF
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC PHOTOCOUPLER PS2607,PS2608,PS2607L,PS2608L HIGH ISOLATION VOLTAGE AC INPUT, HIGH CTR 6-PIN PHOTOCOUPLER -NEPOC Series- DESCRIPTION The PS2607, PS2608, PS2607L, PS2608L are optically coupled isolators containing GaAs light emitting diodes
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OCR Scan
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PS2607
PS2608
PS2607L
PS2608L
PS2607,
PS2608,
PS2607L,
PS2608L
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PDF
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Untitled
Abstract: No abstract text available
Text: DATA SHEET_ NEC GaAs INTEGRATED CIRCUIT uPG152TA L-BAND SPDT SWITCH DESCRIPTION The ¿iPG152TA is an L-band SPDT Single Pole Double Throw GaAs FET switch which was developed for digital cellular or cordless telephone application.
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OCR Scan
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uPG152TA
iPG152TA
WS60-00-1
C10535E)
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PDF
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Untitled
Abstract: No abstract text available
Text: DATA SHEET_ NEC GaAs INTEGRATED CIRCUIT uPG152TA L-BAND SPDT SWITCH DESCRIPTION The ¿iPG152TA is an L-band SPDT Single Pole Double Throw GaAs FET switch which was developed for digital cellular or cordless telephone application.
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OCR Scan
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iPG152TA
C10535E)
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PDF
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2SJ83
Abstract: 2SK238 2SJ82 2SK241 2SK240 2SK203 2SK220 2S119 2SK197 2SK198
Text: - 38 - * . 1 fr K ft f M € tí: € 2SK197 B ÍL B ÍL 2SK198 tñ“ F 2 SK196 H 2SK199 2SK201 NEC 2SK203 NEC 2SK208 m m m £ 4 -k % Vg s * X V* m (V) * (V) 800m 2m 120 0.2 -2 10 10m G 150m -lOn -0.5 2m 14m 10 -0.3 -4 10 LF A J N D -30 GDO 10m G 150m
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OCR Scan
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2SK19600
2SK197
2SK198
2SK199
2SK201
2SK217
2SK218
2SK220
2SK221
2SS222
2SJ83
2SK238
2SJ82
2SK241
2SK240
2SK203
2S119
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PDF
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Nec 1441
Abstract: No abstract text available
Text: DATA SHEET_ NEC GaAs INTEGRATED CIRCUIT ¿iPG172GV PDC1.5GHZ-VARIABLE GAIN PA DRIVER AMPLIFIER DESCRIPTION //PG 172G V is a GaAs FET PA driver amplifier with variable gain function which was developed for PDC Personal Digital Cellular application.
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OCR Scan
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uPG172GV
Nec 1441
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PDF
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