NE292 Search Results

NE292 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
NE29200		NEC	N-CHANNEL HJ-FET CHIP		Original	PDF

NE292 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
transistor NEC D 586 Abstract: NEC D 586 Text: PRELIMINARY DATA SHEET_ HETERO JUNCTION FIELDEFFECT TRANSISTOR NE321000, NE29200 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION The NE321000 and NE29200 are Hetero Junction FET that utilizes the hetero junction to create high mobility	OCR Scan	NE321000, NE29200 NE321000 NE29200 NE321000 P14270E transistor NEC D 586 NEC D 586	PDF
transistor NEC D 882 p Abstract: nec d 882 p datasheet nec d 882 p nec d 882 p transistor NE29200 NE292 574 nec low noise, hetero junction fet nec, hetero junction transistor transistor NEC 882 p Text: DATA SHEET HETERO JUNCTION FIELDEFFECT TRANSISTOR NE29200 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION The NE29200 is Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems, industrial and	Original	NE29200 NE29200 transistor NEC D 882 p nec d 882 p datasheet nec d 882 p nec d 882 p transistor NE292 574 nec low noise, hetero junction fet nec, hetero junction transistor transistor NEC 882 p	PDF
BA7T Abstract: tamagawa C259C GET-BC-0004 bc 8122 LDS100 high temperature reverse bias Text: F RO M 2002Í S B <*> 1 9 : 2 9 / f B I 9 : 2 3 / X » S ^ E 5 0 2 4 Í 4 6 S 2 IMEC G E T —B C — 0 0 0 4 1/20 NEC Corporation T am agaw a P la n t 1763, S h im o m im ab e, N akahara-iku Kawasaki , Kanagawa 211-8661> Q u a l i f i c a t ion Test Report	OCR Scan	29/M1 23/XtH5 GET-BC-0004 NE292series February20, NE292series. NE292series 337cC 0x10a BA7T tamagawa C259C bc 8122 LDS100 high temperature reverse bias	PDF
NEC Ga FET marking L Abstract: tamagawa gaas fet marking B mmic amplifier marking code N5 NE272 FET marking code .N5 ne29200 NE23383B NE292 gaas fet marking a Text: GET-30749, Revision C NEC NEC Corporation Tamagawa Plant 1753,Shimonumabe, Nakahara-lcu, Kawasaki, Kanagawa, 211-8666 Specification Control Drawing o f Grade L GaAs Devices fo r Satellite Applications Prepared on: September 28,2000 Prepared by: Masahito Kushima	OCR Scan	GET-30749, GET-30749 NE29200 NE674 uPG501B uPG501P uPG503B uPG503P uPG506B NEC Ga FET marking L tamagawa gaas fet marking B mmic amplifier marking code N5 NE272 FET marking code .N5 ne29200 NE23383B NE292 gaas fet marking a	PDF