UPG503P Search Results

UPG503P Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
UPG503P		NEC	9 GHz DIVIDE-BY 2 DYNAMIC PRESCALER		Scan	PDF

UPG503P Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: SEC 9 GHz DIVIDE-BY-2 DYNAMIC PRESCALER UPG503B UPG503P ABSOLUTE MAXIMUM RATINGS FEATURES SYM BO LS • W ID E O PERATING FREQ UENC Y RANGE: fiN = 3.5 to 9.0 GHz • LOW POW ER D IS SIPA TIO N • D IV IS IO N RATIO O F 4 • GUARANTEED O PERATING TEMPERATURE RANGE:	OCR Scan	PDF	UPG503B UPG503P UPG503B/P UPG503B,
IN4019 Abstract: PG503 Text: 9 GHz DIVIDE-BY-4 DYNAMIC PRESCALER FEATURES UPG503B UPG503P INPUT POWER vs. INPUT FREQUENCY • WIDE OPERATING FREQUENCY RANGE: fiN = 3.5 to 9 .0 GHz Ta = 25°C 1 VDD - 3 .8 V TT . V ssi= 0 V (VGG1.2 O P E N ) • DIVISION RATIO OF 4 i £ , 0 .+75°C _l \	OCR Scan	PDF	UPG503B UPG503P UPG503B/P PG503, IN4019 PG503
directional coupler chip 8 GHz Abstract: UPG503P diode 517 BF08 UPG503B Text: NEC 9 GHz DIVIDE-BY-2 DYNAMIC PRESCALER FEATURES UPG503B UPG503P ABSOLUTE MAXIMUM RATINGS Ta- 25°q SYM BO LS • WIDE OPERATING FR EQ U EN C Y RANGE: fiN = 3.5 to 9.0 GHz V dd • LOW POW ER DISSIPATION VSS2 P in • DIVISION RATIO O F 4 Pt • GUARANTEED OPERATING TEM PERATURE RANGE:	OCR Scan	PDF	UPG503B UPG503P UPG503B/P PG503B/P UPG503B, directional coupler chip 8 GHz UPG503P diode 517 BF08
SVI 3104 c Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720 Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or	OCR Scan	PDF	AN83301-1 NE24615 AN83302 AN83303-1 NE71083 NE70083 AN83901 AN85301 11/86-LN AN86104 SVI 3104 c UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Untitled Abstract: No abstract text available Text: GaAs MMIC Selection Guide WIDEBAND AMPLIFIERS E M r M O w m I h M m • Ta • « P C RLm dB Rlour (dB) IS0L (dB) «1. P tclsft N * MAX TYP TYP TYP Cot* ucsw ^iw i No. 45 60 10 10 40 B08 Hermetic Metal Ceramic 6-4 70 100 140 8 8 40 B08 Hermetic Metal Ceramic	OCR Scan	PDF	UPG100B UPG101B UPG103B UPG503B UPG506B UPG501P UPG502P UPG503P UPG506P
NEC Ga FET marking L Abstract: tamagawa gaas fet marking B mmic amplifier marking code N5 NE272 FET marking code .N5 ne29200 NE23383B NE292 gaas fet marking a Text: GET-30749, Revision C NEC NEC Corporation Tamagawa Plant 1753,Shimonumabe, Nakahara-lcu, Kawasaki, Kanagawa, 211-8666 Specification Control Drawing o f Grade L GaAs Devices fo r Satellite Applications Prepared on: September 28,2000 Prepared by: Masahito Kushima	OCR Scan	PDF	GET-30749, GET-30749 NE29200 NE674 uPG501B uPG501P uPG503B uPG503P uPG506B NEC Ga FET marking L tamagawa gaas fet marking B mmic amplifier marking code N5 NE272 FET marking code .N5 ne29200 NE23383B NE292 gaas fet marking a
prescaler 120 ghz Abstract: BF08 uPG504 5 GHz DIVIDE-BY-2 STATIC PRESCALER UPG100B Text: GaAs MMIC Selection Guide WIDEBAND AMPLIFIERS Electrisai Characteristics @ Ta « 25°C Test Conditions Gain dB NF (dB) Pan Frequency Ruga AG (dB) Number (GHz) IP G 1 0 0 B 0.05 to 3.0 V dd = +5V VGG = -5V 16 ±1.5 2.7 IP G 1 0 1 B 0.05 to 3.0 V dd = +8V	OCR Scan	PDF