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    NE71083 Search Results

    NE71083 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NE71083 NEC 90 GHz, low noise Ku-K band GaAs MESFET Scan PDF
    NE71083-06 NEC 90 GHz, low noise Ku-K band GaAs MESFET Scan PDF
    NE71083-07 NEC 90 GHz, low noise Ku-K band GaAs MESFET Scan PDF
    NE71083-08 NEC 90 GHz, low noise Ku-K band GaAs MESFET Scan PDF

    NE71083 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC3355 SPICE MODEL

    Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
    Text: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness


    Original     		PDF F2002: F2003: F2004: 2SC3355 SPICE MODEL transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101

    NE800296

    Abstract: diode deg avalanche zo 150 63 NE72089 ne8002 SK3448 universal jfet biasing curve graph gunn diode ghz s-parameter NE800196 impatt diode NE800495-4
    Text: California Eastern Laboratories AN82901-1 APPLICATION NOTE Application of Microwave GaAs FETs INTRODUCTION The history of converting microwave communications, as well as other communications technologies, to solid state electronics is a long one. Early advances were first made in


    Original     		PDF AN82901-1 24-Hour NE800296 diode deg avalanche zo 150 63 NE72089 ne8002 SK3448 universal jfet biasing curve graph gunn diode ghz s-parameter NE800196 impatt diode NE800495-4

    NE70083

    Abstract: NE372800 AN83901 NE372 NE71083 Matching Transformer - line matching transformed AN-PF-1007
    Text: California Eastern Laboratories AN-PF-1007 APPLICATION NOTE Designing High Power GaAs FET Amplifiers Using Single Cell FET Parameters INTRODUCTION Many different power GaAs FET die types are available from NEC. With the recent development of the NE430, NE345L,


    Original     		PDF AN-PF-1007 NE430, NE345L, NE372 24-Hour NE70083 NE372800 AN83901 NE71083 Matching Transformer - line matching transformed AN-PF-1007

    NE800296

    Abstract: NE800196 NE24406 diode deg avalanche zo 150 63 SK3448 ne8002 NE868199 shockley diode NE800495-4 shockley diode application
    Text: California Eastern Laboratories AN82901-1 APPLICATION NOTE Application of Microwave GaAs FETs 9/82 INTRODUCTION The history of converting microwave communications, as well as other communications technologies, to solid state electronics is a long one. Early advances were first made in


    Original     		PDF AN82901-1 NE800296 NE800196 NE24406 diode deg avalanche zo 150 63 SK3448 ne8002 NE868199 shockley diode NE800495-4 shockley diode application

    NE70083

    Abstract: NE372 planar transformer theory small signal GaAs FET x-band microwave fet NE71083 DLI-1988-1
    Text: California Eastern Laboratories AN-PF-1007 APPLICATION NOTE Designing High Power GaAs FET Amplifiers Using Single Cell FET Parameters INTRODUCTION Many different power GaAs FET die types are available from NEC. With the recent development of the NE430, NE345L,


    Original     		PDF AN-PF-1007 NE430, NE345L, NE372 NE70083 planar transformer theory small signal GaAs FET x-band microwave fet NE71083 DLI-1988-1

    SVI 3104 c

    Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
    Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or


    OCR Scan     		PDF AN83301-1 NE24615 AN83302 AN83303-1 NE71083 NE70083 AN83901 AN85301 11/86-LN AN86104 SVI 3104 c UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720

    2SK609

    Abstract: No abstract text available
    Text: NEC NE710 SERIES LOW NOISE Ku-K BAND GaAs FET NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY FEATURES VERY HIGH m ax :90 GHz LOW NOISE FIGURE m T3 HIGH ASSOCIATED GAIN Lg = 0 .3 nm , W g = 2 8 0 jxm N+ CONTACT LAYER (Triple Epitaxial Technology PROVEN RELIABILITY AND STABILITY


    OCR Scan     		PDF NE710 NE71000) E71083 E71084 b4275E5 NE71000 NE71000L NE71000M 2SK609

    ne71084

    Abstract: NE76084 NE71000 NE32684A NE67383 NE72000 NE32584 ne72089
    Text: Small Signal GaAs FET Selection Guide LOW NOISE GaAs FETs 1.0 to 40 12 2.0 10 0.6 11.0 2.0 20 11.0 00 Chip C or B 1-5 200 1.OtO 40 12 2.0 10 0.6 11.0 2-0 20 11.0 oo Chip D 1-22 280 0.1 to 18 12 2.0 10 0.75 10.5 2.0 20 12.0 00 Chip 0.3 2« 0.1 to 18 12 3.0


    OCR Scan     		PDF NE24200 NE32400 NE33200 NE67300 NE71000 NE76000 NE76100 NE24283B NE67383 NE71083 ne71084 NE76084 NE32684A NE72000 NE32584 ne72089

    2SK609

    Abstract: NE71084 NE71000M
    Text: NE710 SERIES LOW NOISE Ku-K BAND GaAs FET NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY FEATURES VERY HIGH fMAX: 90 GHz LOW NOISE FIGURE HIGH ASSOCIATED GAIN Lg s 0 .3 pm, Wg = 280 CD TJ o u. z jun N+ CONTACT LAYER Triple Epitaxial Technology O c S O 3 05


    OCR Scan     		PDF NE710 E71000) E71083 app48 NE71000 NE71000L NE71000M NE71000N 2SK609 NE71084

    ne71084

    Abstract: GaAs MESFET NE25139 NE4200 NE32684A NE71000 71083 ne72089 NE72000 MESFET Application
    Text: Small Signal GaAs FET Selection Guide LOW NOISE GaAs FETs Typical Spécifications @ Ta * ZS'C ftffiW M M R M Bat* Part Humber Test Frequency Gita LeagM Width f Range | Frequency C6HZ Min) Pows Bias NF/Gi Bias Available Vos Ids HFow 6* Vds Ids PliB Package


    OCR Scan     		PDF S3200 NE87300 NE76000 NE24283B ne71084 GaAs MESFET NE25139 NE4200 NE32684A NE71000 71083 ne72089 NE72000 MESFET Application

    ne71084

    Abstract: 2SK609 2SK406 NE71000 NE710-00
    Text: LOW NOISE Ku-K BAND GaAs FET NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY FEATURES VERY HIGH fM A x : NE710 SERIES 90 GHz LOW NOISE FIGURE m T3 HIGH ASSOCIATED GAIN Lg = 0.3 iin, Wg = 280 jrni CO T> N+ CONTACT LAYER Triple Epitaxial Technology) PROVEN RELIABILITY AND STABILITY


    OCR Scan     		PDF NE710 NE71000 NE71000L NE71000M NE71000N 84-SL ne71084 2SK609 2SK406 NE710-00

    2SK609

    Abstract: 2SK609-06 2sk4060 IS22I2 NE701 NE71084 2SK6090 2SK406 NE71000 2SK406-08
    Text: 1SE D E C/ C A L I F O R N I A NEC b427 414 0 Q D l b 2 7 B LOW NOISE Ku-K BAND GaAs MESFET NE710 SERIES FEATURES DESCRIPTION AND APPLICATIONS • VERY HIGH fMAX: 90 GHz The NE710 series features a low noise figure and high associ­ ated gain thru K-band by employing a recessed 0.3 micron


    OCR Scan     		PDF 0QDlb27 NE710 NE71000 NE71000) 2SK609 2SK609-06 2sk4060 IS22I2 NE701 NE71084 2SK6090 2SK406 NE71000 2SK406-08

    NE71000

    Abstract: 2SK609 NE71084 NE71083 2SK60 NE7100 2sk406 NE710 Z168 NE710-00
    Text: NE710 SERIES LOW NOISE Ku-K BAND GaAs FET N O IS E F IG U R E & A S S O C IA TE D G A IN V«. F R EQ U EN C Y V w = 3 V, lo s s 1 0 m A FEATU R ES VE R Y HIG H fuax: 9 0 G Hz LO W N O IS E F IG U R E \ HIG H A S S O C IA T E D G AIN Lo 3 0 .3 \ s . W o s 280


    OCR Scan     		PDF NE710 NE71000) NE71083 NE71084 NE71083 Rn/50 Z-140 Z-112 NE71084 NE71000 2SK609 2SK60 NE7100 2sk406 Z168 NE710-00