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    NE72089 Search Results

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    2SC3355 SPICE MODEL

    Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
    Text: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness


    Original     		PDF F2002: F2003: F2004: 2SC3355 SPICE MODEL transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101

    FHC30LG

    Abstract: ne72089 KC535C NE388-06 AL307BM IC 78L12 SOT89 KC535B AL307 79L05 hearing aid lm358
    Text: RF TRANSISTORS Type P - p- n-p N - n-p-n MMBR5031 2SA1778 2SC3770 2SC4269 MMBR5179 2SC3837K 2SC3545 2SC3771 2SA1669 2SC4364 2SC4270 2SC4365 2SC3838K BFS17,BFS17A 2SC3841 BFR92A BFR93 2SC4569 BFR93P 2SC3774 BFR92P 2SC3775 BFR93A BFR92 2SC4568 2SC4857 MMBR911


    Original     		PDF MMBR5031 2SA1778 2SC3770 2SC4269 MMBR5179 2SC3837K 2SC3545 2SC3771 2SA1669 2SC4364 FHC30LG ne72089 KC535C NE388-06 AL307BM IC 78L12 SOT89 KC535B AL307 79L05 hearing aid lm358

    NE800296

    Abstract: diode deg avalanche zo 150 63 NE72089 ne8002 SK3448 universal jfet biasing curve graph gunn diode ghz s-parameter NE800196 impatt diode NE800495-4
    Text: California Eastern Laboratories AN82901-1 APPLICATION NOTE Application of Microwave GaAs FETs INTRODUCTION The history of converting microwave communications, as well as other communications technologies, to solid state electronics is a long one. Early advances were first made in


    Original     		PDF AN82901-1 24-Hour NE800296 diode deg avalanche zo 150 63 NE72089 ne8002 SK3448 universal jfet biasing curve graph gunn diode ghz s-parameter NE800196 impatt diode NE800495-4

    NE800296

    Abstract: NE800196 NE24406 diode deg avalanche zo 150 63 SK3448 ne8002 NE868199 shockley diode NE800495-4 shockley diode application
    Text: California Eastern Laboratories AN82901-1 APPLICATION NOTE Application of Microwave GaAs FETs 9/82 INTRODUCTION The history of converting microwave communications, as well as other communications technologies, to solid state electronics is a long one. Early advances were first made in


    Original     		PDF AN82901-1 NE800296 NE800196 NE24406 diode deg avalanche zo 150 63 SK3448 ne8002 NE868199 shockley diode NE800495-4 shockley diode application

    NE72089A

    Abstract: NE720 MB427 ne72089 NE72000 2SK354A RN50
    Text: NEC GENERAL PURPOSE GaAs MESFET FEATURES NE72089A NOISE FIGURE, ASSOCIATED GAIN vs. FREQUENCY • LOW COST • LOW NOISE FIGURE 0.8 dB at 4 GHz 1.7dB at8G H z • HIGH ASSOCIATED GAIN 12.0 dB at 4 GHz 9.0 dB at 8 GHz m "D HIGH MAXIMUM AVAILABLE GAIN 16.0 dB at 4 GHz


    OCR Scan     		PDF NE720 NE72089A NE72000) NE72089A) NE72000 PACKAGEOUTUNE89A NE72000M MB427 ne72089 2SK354A RN50

    ne72089

    Abstract: 13ha 2SK354A NE72089A 72000N NE72000 NE720
    Text: NE720 SERIES GENERAL PURPOSE GaAs MESFET NE72089A NOISE FIGURE, ASSOCIATED GAIN vs. FREQUENCY FEATURES • LOW COST • LOW NOISE FIGURE 0.8 dB at 4 GHz 1.7 dB at 8 GHz • HIG H ASSOCIATED GAIN 12.0 dB at 4 GHz 9.0 dB at 8 GHz • 20 m 2, HIGH MAXIMUM AVAILABLE GAIN


    OCR Scan     		PDF NE720 NE72089A E72000) NE72089A) E72000 NE72000 NE72000L NE72000M ne72089 13ha 2SK354A 72000N

    NE72000

    Abstract: NE720
    Text: GENERAL PURPOSE GaAs MESFET FEATURES NE720 SERIES NE72089A NOISE FIGURE, ASSOCIATED GAIN vs. FREQUENCY • LOW COST • LOW NOISE FIGURE 0.8 dB at 4 GHz 1.7 dB at 8 GHz • HIGH ASSOCIATED GAIN 12.0 dB at 4 GHz 9.0 dB a t8 GHz • HIGH MAXIMUM AVAILABLE GAIN


    OCR Scan     		PDF NE720 NE72089A NE72000) NE72089A) NE72000 NE72000M NE72000N

    SVI 3104 c

    Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
    Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or


    OCR Scan     		PDF AN83301-1 NE24615 AN83302 AN83303-1 NE71083 NE70083 AN83901 AN85301 11/86-LN AN86104 SVI 3104 c UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720

    2SK571

    Abstract: ne72089 ne72084 NE72000 NE72089A 2SK354A 2SK571 equivalent 2SK57-1 NE720 NE7200
    Text: NEC/ bM274m SbE D CALIFORNIA NEC OQOaa^D 3*^7 BINEC C T - 3 ,\- z £ GENERAL PURPOSE G aAs MESFET NE720 SERIES OUTLINE DIMENSIONS FEATURES • LO W C O S T Units in mm NE72000 (CHIP) (Units In pm) • LO W N O IS E PIQURE 100- • 0.8 dB at 4 GHz 1.7 dB at 8 GHz


    OCR Scan     		PDF bM274m 0Q022TD NE720 NE72000) NE72084 NE72089A) NE72000 2SK571 ne72089 NE72089A 2SK354A 2SK571 equivalent 2SK57-1 NE7200

    ne71084

    Abstract: NE76084 NE71000 NE32684A NE67383 NE72000 NE32584 ne72089
    Text: Small Signal GaAs FET Selection Guide LOW NOISE GaAs FETs 1.0 to 40 12 2.0 10 0.6 11.0 2.0 20 11.0 00 Chip C or B 1-5 200 1.OtO 40 12 2.0 10 0.6 11.0 2-0 20 11.0 oo Chip D 1-22 280 0.1 to 18 12 2.0 10 0.75 10.5 2.0 20 12.0 00 Chip 0.3 2« 0.1 to 18 12 3.0


    OCR Scan     		PDF NE24200 NE32400 NE33200 NE67300 NE71000 NE76000 NE76100 NE24283B NE67383 NE71083 ne71084 NE76084 NE32684A NE72000 NE32584 ne72089

    ne71084

    Abstract: GaAs MESFET NE25139 NE4200 NE32684A NE71000 71083 ne72089 NE72000 MESFET Application
    Text: Small Signal GaAs FET Selection Guide LOW NOISE GaAs FETs Typical Spécifications @ Ta * ZS'C ftffiW M M R M Bat* Part Humber Test Frequency Gita LeagM Width f Range | Frequency C6HZ Min) Pows Bias NF/Gi Bias Available Vos Ids HFow 6* Vds Ids PliB Package


    OCR Scan     		PDF S3200 NE87300 NE76000 NE24283B ne71084 GaAs MESFET NE25139 NE4200 NE32684A NE71000 71083 ne72089 NE72000 MESFET Application

    2SK571

    Abstract: NE720 NE72084 NE72000 NE72089 2SK571 equivalent ga 132 2SK57-1
    Text: NEC/ b427mM QQ022TD 317 «NE CC SbE D CALIFORNIA NEC GENERAL PURPOSE GaAs MESFET NE720 SERIES OUTLINE DIMENSIONS FEATURES • LOW COST Units in mm NE72000 (CHIP) (Units In pm) • LOW NOISE FIGURE 0.8 dB at 4 GHz 1.7 dB at 8 GHz i 35 • HIGH ASSOCIATED GAIN


    OCR Scan     		PDF b427mM QQ022TD NE720 NE72000 Rn/50 NE72000 2SK571 NE72084 NE72089 2SK571 equivalent ga 132 2SK57-1