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    California Eastern Laboratories (CEL) 2SA1977-A

    RF TRANS PNP 12V 8.5GHZ SOT23
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    California Eastern Laboratories (CEL) 2SA1977-T1B-A

    RF TRANS PNP 12V 8.5GHZ SOT23
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    2SA1977 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SA1977 NEC PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER Original PDF
    2SA1977-A CEL Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - TRANS RF PNP 12V 0.05A SOT-23 Original PDF
    2SA1977FB NEC PNP Epitaxial Silicon Transistor Microwave Amplifier Original PDF
    2SA1977-L NEC Transistor for amplifying PNP micro wave Original PDF
    2SA1977-T1 NEC Transistor for amplifying PNP micro wave Original PDF
    2SA1977-T1B NEC Transistor for amplifying PNP micro wave Original PDF
    2SA1977-T1B-A CEL Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - RF TRANSISTOR PNP SOT-23 Original PDF

    2SA1977 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PT-200

    Abstract: 2SA1977 Marking T92 SOT marking t92 TRANSISTOR SMD 1301
    Text: Transistors IC SMD Type PNP Epitaxial Silicon Transistor 2SA1977 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 High gain 0.55 High fT :fT = 8.5 GHz TYP. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 | S21e |2 = 12.0 dB TYP. @f = 1.0 GHz, VCE = -8 V, IC = -20 mA


    Original     		PDF 2SA1977 OT-23 PT-200 2SA1977 Marking T92 SOT marking t92 TRANSISTOR SMD 1301

    617-70

    Abstract: 2SA1977 2SC3583 MARKING T92 nec 561 LI-01/transistor k 0247
    Text: DATA SHEET PRELIMINARY DATA SHEET Silicon Transistor 2SA1977 PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER FEATURES _0.2 2.8+ High fT 0.4 +0.1 –0.05 • PACKAGE DIMENSION in millimeters fT = 8.5 GHz TYP. • High gain 0.65 +0.1 –0.15 1.5 | S21e | = 12.0 dB TYP. @f = 1.0 GHz, VCE = −8 V, IC = −20 mA


    Original     		PDF 2SA1977 617-70 2SA1977 2SC3583 MARKING T92 nec 561 LI-01/transistor k 0247

    MRF947T1 equivalent

    Abstract: MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L
    Text: California Eastern Laboratories CEL / NEC - Complete Cross Reference Manufacturer Part Nbr NEC 2SA1977 NEC 2SA1978 NEC 2SC2351 NEC 2SC3355 NEC 2SC3357 NEC 2SC3545 NEC 2SC3583 NEC 2SC3585 Toshiba Matsushita Matsushita NEC 2SC4093 NEC 2SC4094 NEC 2SC4095 Hitachi


    Original     		PDF 2SA1977 2SA1978 2SC2351 2SC3355 2SC3357 2SC3545 2SC3583 2SC3585 2SC4093 2SC4094 MRF947T1 equivalent MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L

    ic 741 free

    Abstract: 2SA1977 NE68133 NE97733 NE97733-T1 S21E iC 828 Transistor
    Text: PNP SILICON HIGH FREQUENCY TRANSISTOR NE97733 FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8.5 GHz TYP • HIGH SPEED SWITCHING CHARACTERISTICS • NPN COMPLIMENT AVAILABLE: NE68133 • HIGH INSERTION POWER GAIN: |S21E|2 = 12 dB at 1 GHz 33 SOT 23 STYLE


    Original     		PDF NE97733 NE68133 NE97733 2SA1977 NE97733-T1 24-Hour ic 741 free 2SA1977 NE68133 NE97733-T1 S21E iC 828 Transistor

    FET marking code g5d

    Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
    Text: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


    Original     		PDF R09CL0001EJ0100 PX10727EJ02V0PF) FET marking code g5d PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic

    smd code book

    Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
    Text: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ


    Original     		PDF OD-80 OD123/323 OT-23, OT346 OT-323, OT-416 OT-223, OT-89 OT-143, OT-363 smd code book transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes

    2sk2500

    Abstract: UPC1037HA UPC648C 2SK927 NEC 2SK2500 uPD5201G UPA64HA UPD6360C 2SH24 n13t1
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		PDF C11178JJCV0IF0012 C11178JJCV0IF MIL-HDBK-217 MILMIL10100 MIL-HDBK-217Fit 2sk2500 UPC1037HA UPC648C 2SK927 NEC 2SK2500 uPD5201G UPA64HA UPD6360C 2SH24 n13t1

    nec mosfet marked v75

    Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		PDF G0706 PX10727EJ02V0PF nec mosfet marked v75 NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77

    ic 741 free

    Abstract: T92 marking 2SA1977 NE68133 NE97733 S21E 682 MARKING SOT-23 sot-23 24
    Text: PNP SILICON HIGH FREQUENCY TRANSISTOR NE97733 FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8.5 GHz TYP • HIGH SPEED SWITCHING CHARACTERISTICS • NPN COMPLIMENT AVAILABLE: NE68133 • HIGH INSERTION POWER GAIN: |S21E|2 = 12 dB at 1 GHz 33 SOT 23 STYLE


    Original     		PDF NE97733 NE68133 NE97733 2SA1977 24-Hour ic 741 free T92 marking 2SA1977 NE68133 S21E 682 MARKING SOT-23 sot-23 24

    2SK2500

    Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
    Text: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose


    Original     		PDF

    SMD M05 sot23

    Abstract: NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404
    Text: 2013-2014 RF & Wireless Semiconductors P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories CEL is the exclusive sales and marketing partner in the Americas for products made by the Compound Semiconductor Devices Business Division (CSDBD) of Renesas Electronics Corporation, formerly


    Original     		PDF 2013/4M SMD M05 sot23 NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404

    2SA1977

    Abstract: NE68133 NE97733 S21E
    Text: PNP SILICON HIGH FREQUENCY TRANSISTOR NE97733 FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8.5 GHz TYP • HIGH SPEED SWITCHING CHARACTERISTICS • NPN COMPLIMENT AVAILABLE: NE68133 • HIGH INSERTION POWER GAIN: |S21E|2 = 12 dB at 1 GHz 33 SOT 23 STYLE


    Original     		PDF NE97733 NE68133 NE97733 2SA1977 2SA1977 NE68133 S21E

    transistor marking T79 ghz

    Abstract: marking code C1H mmic marking code C3E SOT-89 upb1507 marking code C1G mmic marking code C1E mmic data book transistors 2SA uPC2712 pc3215 transistor 2SA data book
    Text: SILICON MICROWAVE SEMICONDUCTORS Silicon/Silicon Germanium discrete, MMIC SELECTION GUIDE January 2005 Bluetooth is a trademark owned by Bluetooth SIG, Inc., U.S.A. When the product s listed in this document is subject to any applicable import or export control laws and regulation of the authority


    Original     		PDF PU10015EJ04V0PF transistor marking T79 ghz marking code C1H mmic marking code C3E SOT-89 upb1507 marking code C1G mmic marking code C1E mmic data book transistors 2SA uPC2712 pc3215 transistor 2SA data book

    MMBD2104

    Abstract: Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932
    Text: The Surface Mount Device Code Book R P Blackwell G4PMK A marsport publication! Introduction SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a


    Original     		PDF BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 LL914 LL4150, MMBD2104 Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932

    SMD Codes

    Abstract: TRANSISTOR SMD T1P MMBD2104 BAW92 smd transistor A6a schottky diode s6 81A a4s smd transistor Transistor SMD a7s transistor SMD P2F MMBD2101
    Text: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.


    Original     		PDF BZV49 BZV55 500mW BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 SMD Codes TRANSISTOR SMD T1P MMBD2104 BAW92 smd transistor A6a schottky diode s6 81A a4s smd transistor Transistor SMD a7s transistor SMD P2F MMBD2101

    transistor NEC 2SK2500

    Abstract: NEC 2SK2500 2SK2500 N13T1 2SK2500 equivalent UPC1037HA UPC648C 2sh25 2sk2500 transistor 2SH24
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF MIL-HDBK-217 C11178EJCV0IF transistor NEC 2SK2500 NEC 2SK2500 2SK2500 N13T1 2SK2500 equivalent UPC1037HA UPC648C 2sh25 2sk2500 transistor 2SH24

    marking code C1E SMD Transistor

    Abstract: TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817
    Text: RF & Microwave Device Overview 2003 NEC Electronics Europe GmbH Oberrather Str. 4 40472 Düsseldorf, Germany Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 - Podbielskistr. 164 30177 Hannover, Germany Tel. (05 11) 3 34 02-0 Fax (05 11) 3 34 02-34 - Arabellastr. 17


    Original     		PDF P14740EE5V0PF00 marking code C1E SMD Transistor TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817

    NPN/transistor NEC K 2500

    Abstract: 2SA1977 2SC3583
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    NEC C959

    Abstract: rs 586 706 2SA1977 2SC3583
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		PDF 2SA1977 NPN2SC3583 S21e2 108-0171NEC 46017NEC 54024NEC NEC C959 rs 586 706 2SA1977 2SC3583

    Untitled

    Abstract: No abstract text available
    Text: SILICON TRANSISTOR NE97733 PNP SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8.5 GHz TYP • HIGH SPEED SWITCHING CHARACTERISTICS • NPN COMPLIMENT AVAILABLE: NE68133 • HIGH INSERTION POWER GAIN: |S21E|2 = 12 dB at 1 GHz


    Original     		PDF NE97733 NE68133 NE97733 2SA1977 NE97733-T1B-A 24-Hour

    2SK2396A

    Abstract: NEC 2SK2396A k2396a pc1658 2SC2407 P10100EJ6V0SG00 UAA 1006 k2396 K2597 Marking Code SAW MOS transistor
    Text: SILICON MICROWAVE SEMICONDUCTORS Silicon discrete, Silicon MMIC Dual gate GaAs FET SELECTION GUIDE 1999/2000 6th Edition [MEMO] 2 Selection Guide P10100EJ6V0SG00 • The information in this document is based on documents issued in October,1999 at the latest. The


    Original     		PDF P10100EJ6V0SG00 2SK2396A NEC 2SK2396A k2396a pc1658 2SC2407 P10100EJ6V0SG00 UAA 1006 k2396 K2597 Marking Code SAW MOS transistor

    BB 509 varicap diode

    Abstract: BLF6G22L ON503 tea6849 bf1107 spice model PIN diode ADS model ULTRA FAST DIODES SANYO catalog RF MANUAL diode varicap BB 112 adi cmos bipolar SiGe
    Text: UNLEASH RF RF Manual 17 edition th Application and design manual for High Performance RF products June 2013 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s


    Original     		PDF

    mc10087f1

    Abstract: mc-10041 mc-10043 MC-10087F1-XXX MC-10044 MC-10051BF1 2SC5664 2SC5292 UPC1701C mc-10059
    Text: 1／89 Lead-free Semiconductor Product Conditions Renesas Electronics Lead-free Semiconductor Product Conditions August 17, 2010 1.Please inquire of Renesas Electronics sales person about lead-free product status while is not listed in the following table.


    Original     		PDF IR260/WS260/HS350 IR260/HS350 mc10087f1 mc-10041 mc-10043 MC-10087F1-XXX MC-10044 MC-10051BF1 2SC5664 2SC5292 UPC1701C mc-10059

    Untitled

    Abstract: No abstract text available
    Text: PNP SILICON HIGH FREQUENCY TRANSISTOR NE97733 FEATURES_ • HIGH GAIN BANDW IDTH PRODUCT: fr = 8.5 G H z TYP • HIGH SPEED SW ITCHING CHARACTERISTICS • NPN COM PLIM ENT AVAILABLE: N E 68133 • HIGH INSERTION POWER GAIN: |Ssie |2 = 12 dB at 1 G H z


    OCR Scan     		PDF NE97733 NE97733 2SA1977 E97733-T1 24-Hour