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Rochester Electronics LLC NE3521M04-T2-A RF MOSFET GAAS HJ-FET 2V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NE3521M04-T2-A	Bulk	28,004		1,402	1 - 10 - 100 - 1000 - 10000 $0.21	Buy Now
California Eastern Laboratories (CEL) NE3520S03-A RF MOSFET GAAS HJ-FET 2V S03
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DigiKey	NE3520S03-A	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
California Eastern Laboratories (CEL) NE3521M04-A RF MOSFET GAAS HJ-FET 2V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NE3521M04-A					1 - 10 - 100 - 1000 - 10000 -	Buy Now
California Eastern Laboratories (CEL) NE3521M04-T2-A RF MOSFET GAAS HJ-FET 2V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NE3521M04-T2-A	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
California Eastern Laboratories (CEL) NE3520S03-T1C-A RF MOSFET GAAS HJ-FET 2V S03
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NE3520S03-T1C-A	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now

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NE352 Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
NE3520S03-A		Renesas Electronics	RF FETs, Discrete Semiconductor Products, FET RF HFET 20GHZ 2V 10MA S03		Original	PDF
NE3520S03-T1C-A		Renesas Electronics	RF FETs, Discrete Semiconductor Products, FET RF HFET 20GHZ 2V 10MA S03		Original	PDF
NE3521M04-A		CEL	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC HJ-FET N-CH GAAS 4SMINI		Original	PDF
NE3521M04-T2-A		CEL	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC HJ-FET N-CH GAAS 4SMINI		Original	PDF

NE352 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
NE3521M04 Abstract: marking V86 Text: Data Sheet NE3521M04 N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain R09DS0058EJ0100 Rev.1.00 Mar 19, 2013 FEATURES • Low noise figure and high associated gain: NF = 0.85 dB TYP., Ga = 11 dB TYP. @ VDS = 2 V, ID = 10 mA, f = 20 GHz NF = 0.9 dB TYP., Ga = 10.5 dB TYP. @VDS = 2 V, ID = 6mA, f = 20 GHz Reference Value	Original	NE3521M04 R09DS0058EJ0100 NE3521M04-T2 NE3521M04-T2-A NE3521M04 marking V86	PDF
NE3520S03 Abstract: nE352 Text: Data Sheet NE3520S03 R09DS0029EJ0100 Rev.1.00 Oct 18, 2011 N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain FEATURES • Low noise figure and high associated gain: NF = 0.65 dB TYP., Ga = 13.5 dB TYP. @ f = 20 GHz, VDS = 2 V, ID = 10 mA • K band Micro-X plastic S03 package	Original	NE3520S03 R09DS0029EJ0100 NE3520S03-T1C NE3520S03-T1C-A NE3520S03-T1D NE3520S03-T1D-A NE3520S03 nE352	PDF
ne3520 Abstract: nE352 hjfet Text: A Business Partner of Renesas Electronics Corporation. Data Sheet NE3520S03 R09DS0029EJ0100 Rev.1.00 Oct 18, 2011 N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain FEATURES • Low noise figure and high associated gain: NF = 0.65 dB TYP., Ga = 13.5 dB TYP. @ f = 20 GHz, VDS = 2 V, ID = 10 mA	Original	NE3520S03 R09DS0029EJ0100 NE3520S03-T1C NE3520S03-T1C-A NE3520S03-T1D NE3520S03-T1D-A ne3520 nE352 hjfet	PDF
SMD M05 sot23 Abstract: NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404 Text: 2013-2014 RF & Wireless Semiconductors P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories CEL is the exclusive sales and marketing partner in the Americas for products made by the Compound Semiconductor Devices Business Division (CSDBD) of Renesas Electronics Corporation, formerly	Original	2013/4M SMD M05 sot23 NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404	PDF