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    UPA101 Price and Stock

    NEC Electronics Group UPA101G-E1

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    Bristol Electronics UPA101G-E1 5,975
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    Quest Components UPA101G-E1 2,000
    • 1 $2.184
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    • 1000 $0.9009
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    NEC Electronics Group UPA101G

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    Bristol Electronics UPA101G 100
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    Quest Components UPA101G 720
    • 1 $2.184
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    • 100 $2.184
    • 1000 $0.9009
    • 10000 $0.9009
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    UPA101 Datasheets (18)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    UPA101 Hynix Semiconductor 12x8 CROSSPOINT SWITCH WITH CONTROL MEMORY Original PDF
    uPA101 NEC Semiconductor Selection Guide Original PDF
    uPA101 NEC Semiconductor Selection Guide 1995 Original PDF
    uPA101 NEC HIGH FREQUENCY NPN TRANSISTOR ARRAY Original PDF
    UPA101B Hynix Semiconductor 12x8 CROSSPOINT SWITCH WITH CONTROL MEMORY Original PDF
    UPA101B NEC Ultra-high-frequency NPN transistor array Original PDF
    UPA101B California Eastern Laboratories Transistor - Datasheet Reference Scan PDF
    UPA101B-E1 Hynix Semiconductor 12x8 CROSSPOINT SWITCH WITH CONTROL MEMORY Original PDF
    uPA101B-E1 NEC HIGH FREQUENCY NPN TRANSISTOR ARRAY Original PDF
    UPA101G Hynix Semiconductor 12x8 CROSSPOINT SWITCH WITH CONTROL MEMORY Original PDF
    UPA101G NEC Ultra-high-frequency NPN transistor array Original PDF
    UPA101G California Eastern Laboratories Transistor - Datasheet Reference Scan PDF
    UPA101G-E1 Hynix Semiconductor 12x8 CROSSPOINT SWITCH WITH CONTROL MEMORY Original PDF
    UPA101G-E1 NEC Ultra-high-frequency NPN transistor array Original PDF
    uPA101G-E1 NEC TRANS GP BJT NPN 6V 0.04A 8SOP Original PDF
    UPA101G-E1 NEC TRANSISTOR ARRAY Original PDF
    UPA101G-E2 NEC Ultra-high-frequency NPN transistor array Original PDF
    UPA101P NEC Ultra-high-frequency NPN transistor array Original PDF

    UPA101 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: UPA101G * TRANSISTOR ARRAY —TOP VIEW— 8 7 6 5 1 2 3 4


    Original     		PDF UPA101G

    UPA101

    Abstract: UPA101-104 Transistor Array differential amplifier UPA101B UPA101G UPA102 UPA102G UPA103 UPA104 RF TRANSISTOR NPN MICRO-X
    Text: California Eastern Laboratories AN-SI-1001 APPLICATION NOTE Ultrahigh Frequency Transistor Arrays: UPA101/102/103/104 INTRODUCTION SUMMARY In recent years there has been a rapidly increasing demand for high-frequency amplifiers and high-speed logic devices,


    Original     		PDF AN-SI-1001 UPA101/102/103/104 UPA104 UPA104 UPA104B UPA101 UPA101-104 Transistor Array differential amplifier UPA101B UPA101G UPA102 UPA102G UPA103 RF TRANSISTOR NPN MICRO-X

    UPA101G

    Abstract: UPA101G-E1
    Text: UPA101G TRANSISTOR ARRAY FEATURES CONNECTION DIAGRAM Top View • BUILT-IN ULTRAHIGH FREQUENCY MULTIPLIER: (9 GHz Single Transistors) • OUTSTANDING hFE LINEARITY • SMALL PACKAGE • TAPE AND REEL PACKAGING OPTION AVAILABLE UPA101G 8 6 7 Q2 Q1 Q3 Q5 1


    Original     		PDF UPA101G UPA10 UPA101G-E1 2500/REEL 24-Hour UPA101G UPA101G-E1

    kf 8715

    Abstract: fiber optic FM Modulator gilbert cell sum RF TRANSISTOR 10GHZ FM Modulator 2GHz rf digital modulators ic 50E08 stub tuner matching 500E HFA3101
    Text: HFA3101 S E M I C O N D U C T O R Gilbert Cell UHF Transistor Array July 1995 Features Description • High Gain Bandwidth Product fT . . . . . . . . . . . 10GHz The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Harris bonded wafer UHF-1 SOI


    Original     		PDF HFA3101 10GHz HFA3101 10GHz) 390nH 825MHz 900MHz 75MHz 76MHz kf 8715 fiber optic FM Modulator gilbert cell sum RF TRANSISTOR 10GHZ FM Modulator 2GHz rf digital modulators ic 50E08 stub tuner matching 500E

    HFA3101

    Abstract: RF NPN POWER TRANSISTOR C 10-12 GHZ 920mhz
    Text: HFA3101 Data Sheet File Number 3663.4 Gilbert Cell UHF Transistor Array Features The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Intersil’s bonded wafer UHF-1 SOI process, this array achieves very high fT 10GHz while


    Original     		PDF HFA3101 HFA3101 10GHz) RF NPN POWER TRANSISTOR C 10-12 GHZ 920mhz

    Harris HFA3101 5 GHz Gilbert cell array

    Abstract: Array chip resistors fiber optic FM Modulator FM Modulator 2GHz 500E 800E H3101B HFA3101 reactance modulator HFA3101B96
    Text: HFA3101 S E M I C O N D U C T O R Gilbert Cell UHF Transistor Array August 1996 Features Description • High Gain Bandwidth Product fT . . . . . . . . . . . 10GHz The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Harris bonded wafer UHF-1 SOI


    Original     		PDF HFA3101 10GHz HFA3101 10GHz) Harris HFA3101 5 GHz Gilbert cell array Array chip resistors fiber optic FM Modulator FM Modulator 2GHz 500E 800E H3101B reactance modulator HFA3101B96

    kf 8715

    Abstract: 900mhz frequency generator Ic 9430 UPA101 transistors equivalent 9012 5GHz band pass filter 500E H3101B HFA3101B HFA3101B96
    Text: HFA3101 Data Sheet September 1998 File Number 3663.4 Gilbert Cell UHF Transistor Array Features The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Intersil’s bonded wafer UHF-1 SOI process, this array achieves very high fT 10GHz while


    Original     		PDF HFA3101 HFA3101 10GHz) 10GHz kf 8715 900mhz frequency generator Ic 9430 UPA101 transistors equivalent 9012 5GHz band pass filter 500E H3101B HFA3101B HFA3101B96

    HFA3101

    Abstract: 9700E fiber optic FM Modulator gilbert cell sum 8906 ic FM Modulator 2GHz 500E H3101B HFA3101B gilbert cell differential pair
    Text: HFA3101 TM Data Sheet September 1998 File Number 3663.4 Gilbert Cell UHF Transistor Array Features The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Intersil’s bonded wafer UHF-1 SOI process, this array achieves very high fT 10GHz while


    Original     		PDF HFA3101 HFA3101 10GHz) 10GHz 9700E fiber optic FM Modulator gilbert cell sum 8906 ic FM Modulator 2GHz 500E H3101B HFA3101B gilbert cell differential pair

    H3101B

    Abstract: HFA3101B HFA3101 HFA3101B96 HFA3101BZ HFA3101BZ96 STD-020C UPA101 gilbert cell sum IC 7812 pin configuration
    Text: HFA3101 Data Sheet September 2004 Gilbert Cell UHF Transistor Array Features The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Intersil’s bonded wafer UHF-1 SOI process, this array achieves very high fT 10GHz while


    Original     		PDF HFA3101 HFA3101 10GHz) FN3663 UPA101 H3101B HFA3101B HFA3101B96 HFA3101BZ HFA3101BZ96 STD-020C UPA101 gilbert cell sum IC 7812 pin configuration

    ULN2083

    Abstract: AH8308T sg3183 Cross Reference Harris CA3046 MAXim cross reference MAX232CPE SL322 mn5920 max233cpp
    Text: Cross Reference Guide Semiconductor Signal Processing Communications Products Cross Reference COMPETITOR PART NUMBER HARRIS CLOSEST PART NUMBER AD770 HI3026A AD775 COMPETITOR PART NUMBER HARRIS CLOSEST PART NUMBER H AD9483 HI5630 H HI1175 P AD9620 HFA1110


    Original     		PDF AD770 HI3026A AD775 AD9483 HI5630 HI1175 AD9620 HFA1110 AD8001 HFA1100 ULN2083 AH8308T sg3183 Cross Reference Harris CA3046 MAXim cross reference MAX232CPE SL322 mn5920 max233cpp

    nec transistor

    Abstract: transistor and schematic symbols
    Text: NEC-TRANSISTOR ARRAY FEATURES UPA101G CONNECTION DIAGRAM BUILT-IN ULTRAHIGH FREQUENCY MULTIPLIER: 9 GHz Single Transistors (Top view) UPA101G OUTSTANDING hFE LINEARITY SMALL PACKAGE _1 1_ 1- TAPE AND REEL PACKAGING OPTION


    OCR Scan     		PDF UPA101G UPA101G b427525 UPA101G-E1 2500/REEL b4275B5 00b5fl04 nec transistor transistor and schematic symbols

    NEC uPA101G

    Abstract: UPA101B UPA101G
    Text: NEC/ CALIFORNIA 5bE D NEC b4274m 00GSS7S ÖS3 * N E C C UPA101B UPA101G TRANSISTOR ARRAY FEATURES OUTLINE DIMENSIONS • BUILT-IN ULTRAHIGH FREQUENCY MULTIPLIER: 9 GHz Single Transistors (Units in mm) OUTLINE BS14 T0PVIEW <^° 8 • OUTSTANDING hFE LINEARITY


    OCR Scan     		PDF b4274m G002575 UPA101B UPA101G UPA101B: 14-pin UPA101G: NEC uPA101G UPA101B UPA101G

    Silicon Bipolar Transistor Q6

    Abstract: No abstract text available
    Text: NEC-TRANSISTOR ARRAY UPA101G CONNECTION DIAGRAM FEATURES Top View BUILT-IN ULTRAHIGH FREQUENCY MULTIPLIER: UPA101B (9 GHz Single Transistors) 14 OUTSTANDING hFE LINEARITY 13 12 11 10 9 6 TWO PACKAGE OPTIONS: UPA101B: Superior thermal dissipation due to studded


    OCR Scan     		PDF UPA101G UPA101B UPA101B: 14-pin UPA101G: UPA101B, UPA101G UPA101B UPA101Q Silicon Bipolar Transistor Q6

    Untitled

    Abstract: No abstract text available
    Text: NEC-TRANSISTOR ARRAY UPA101G CONNECTION DIAGRAM Topview FEATURES B U IL T -IN U L T R A H IG H F R E Q U E N C Y M U L T IP L IE R : (9 G H z S in g le T ra n s is to rs ) UPA101G O U T S T A N D IN G hFE L IN E A R IT Y 8 7 6 SM ALL PACKAGE


    OCR Scan     		PDF UPA101G UPA101G UPA101G-E1 2500/REEL

    transistor A 564

    Abstract: transistor am s20 T06 transistor transistor t06 19 transistor t06
    Text: Transistor Arrays gtECTRICAL CHARACTERISTICS <7> * 2SX! • fr Mm SLt * ; UPA101G1 UPA1Q2G2 UPA103G3 hFE Ces CCS: mA) CcB tpF) (pF) (pF) MAX MAX TYP TYP TYP TYP 1.0 1.0 1.0 1.0 100 - 1.0 1.0 100 100 0.9 1.4 1.4 1.4 •:1.4 iCBO (GHz) TYP MAX 9 40 40 40


    OCR Scan     		PDF UPA101G1 UPA102G2 UPA103G3 DC-150 UPB1004GS1 UPC8116GR2 UPC2798GR3 transistor A 564 transistor am s20 T06 transistor transistor t06 19 transistor t06

    SVI 3104 c

    Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
    Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or


    OCR Scan     		PDF AN83301-1 NE24615 AN83302 AN83303-1 NE71083 NE70083 AN83901 AN85301 11/86-LN AN86104 SVI 3104 c UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720

    3101-B

    Abstract: h3101 Harris HFA3101 5 GHz Gilbert cell array csf 78-12
    Text: CSF! H A R R I S W HFA3101 S E M I C O N D U C T O R Gilbert Cell UHF Transistor Array November 1996 Features • Description High Gain Bandwidth Product fT .10GHz • High Power Gain Bandwidth P ro d u c t. 5GHz •


    OCR Scan     		PDF HFA3101 HFA3101 10GHz) 10GHz 1320nm 3101-B h3101 Harris HFA3101 5 GHz Gilbert cell array csf 78-12

    transistor t06

    Abstract: T06 transistor transistor t06 19 2SC 930 AF t06 93 UPC1678B LT 5219 UPC8103T UPC8108T
    Text: Silicon MMIC Selection Guide WIDEBAND AMPLIFIERS Part Number Typ. Fr*q. Range O 3 dB down MHz ELECTRICAL CHARACTERISTICS1 <f*500 MHz, «XC«frt a t noted T a * 25°C.) NF (dB) Icc Vcc (V) (mA) MIN TYP MAX TYP RLin RLout PSAT (dB) (dBm) (dB) ISOL (dB) MAX


    OCR Scan     		PDF

    HFA3101

    Abstract: No abstract text available
    Text: HFA3101 Semiconductor S e p te m b e r 1998 F ile N u m b e r 3663.4 Gilbert Cell UHF Transistor Array Features The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Harris bonded wafer UHF-1 SOI process, this array achieves very high fy 10GHz while


    OCR Scan     		PDF HFA3101 HFA3101 10GHz) 10GHz

    mmic a08

    Abstract: t06 TRANSISTOR transistor t06 B584B B585B 544 mmic uPC1675 mmic prescaler divide by 64 UPC1668B UPC1678B
    Text: Silicon MMIC Selection Guide WIDEBAND AMPLIFIERS ELECTRICAL C K M K T E m m C S 'M a O M Hz. i- ' « M l» ICC V (mA) NF (dB) Rim Gain (dB) (dB) RL oot PSAT (dB) (dBm) ISOL (dB) m tm m m n * m m MIN TYP MAX TYP MIN TYP MAX TYP TYP TYP TYP Ca* 25 5.5 16 18


    OCR Scan     		PDF

    u101b

    Abstract: No abstract text available
    Text: DATA SHEET COMPOUND TRANSISTOR _ j f P A 101 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES OUTLINE DIMENSIONS Units in mm • BUILT-IN ULTRAHIGH FREQUENCY MULTIPLIER: • OUTSTANDING hFE LINEARITY • TW O PACKAGE O PTIO NS: (Each Transistor has fr 9 GHz)


    OCR Scan     		PDF uPA101B 14-pin tPA101G u101b

    815 transistor

    Abstract: HFA3101 3101-B noise cancellation IC 3101b
    Text: 80 HARRIS HFA3101 SEMICONDUCTOR Gilbert Cell UHF Transistor Array November 1996 Features Description • High Gain Bandwidth Product fT .10GHz The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Harris bonded water UHF-1 SOI


    OCR Scan     		PDF HFA3101 HFA3101 10GHz) 10GHz 815 transistor 3101-B noise cancellation IC 3101b

    Horizontal Transistor TT 2246

    Abstract: ca3080 spice vogt transformer 406 69 CA3098 equivalent ICL8038 applications advantages disadvantages gi 9544 class d amplifier schematic hip4080 STR 6459 SEVEN PIN IC TRANSISTOR FOR POWER SUPPLY siemens transistor manual BUF601
    Text: New High Speed Linear Products VIDEO OP AMPS AND BUFFERS HFA1105 LOW POWER VIDEO OP AMP HFA1115 I LOW POWER PROGRAMMABLE GAIN VIDEO BUFFER [ AnswerFAX DOCUMENT # 3395 AnswerFAX DOCUMENT * 3606 • -3dB Bandwidth Ay * + 2 . 350MHz


    OCR Scan     		PDF HFA1105 HFA1115 350MHz 225MHz 000V/ps 50MHz. Horizontal Transistor TT 2246 ca3080 spice vogt transformer 406 69 CA3098 equivalent ICL8038 applications advantages disadvantages gi 9544 class d amplifier schematic hip4080 STR 6459 SEVEN PIN IC TRANSISTOR FOR POWER SUPPLY siemens transistor manual BUF601

    Untitled

    Abstract: No abstract text available
    Text: HFA3101 Semiconductor September 1998 File Number 3663.4 Gilbert Cell UHF Transistor Array Features T he HFA3101 is an all NPN tra n sisto r array con fig u re d as a • High G ain B andw idth P rod uct f j .10G Hz M u ltiplier Cell. Based on H arris bo nded w a fe r UHF-1 SO I


    OCR Scan     		PDF HFA3101 HFA3101 1340nm 1320nm