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    L427414 Search Results

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    2SK281

    Abstract: 203l2 NE218 NE21889 NE21800
    Text: NEC/ L427414 OOOlblH Q 1SE D CALIFORNIA NEC T - 3 ,h lS LOW NOISE X-BAND G aAs MESFET NE21800 NE21889 FEATURES DESCRIPTION AND APPLICATIONS • V E R Y H IG H fmax: 60 G H z The NE218 is a 1 pm recessed gate gallium arsenide GaAs n-channel field effect transistor (FET). Offering low noise figure


    OCR Scan     		Lj457414 NE21800 NE21889 NE218 NE21800) 2SK281 203l2 NE21889 PDF

    nec VARIABLE CAPACITANCE DIODE

    Abstract: ND6361-3A ND6361-3D diode 3D
    Text: NEC/ CALIFORNIA 1SE D NEC L427414 GOQnSb T ND6361-3A ND6361-3D C-BAND SILICON PIN DIODE OUTLINE DIMENSIONS FEATURES Units in aim OUTLINE 3A* • LOW DISTORTION: (IMs = 75 dB) • WIDE RF RESISTANCE RANGE: (30 dB) 4.0 MIN. • p 4.0 MIN. • P TYPE BASE - /¿ =L


    OCR Scan     		L427414 ND6361-3A ND6361-3D WD6361 ND6361-3D. b4S7414 ND6361 nec VARIABLE CAPACITANCE DIODE ND6361-3D diode 3D PDF

    UPC1678B

    Abstract: UPC1678
    Text: N E C / C A L IF O R N IA 5bE D L427414 000Eb5cJ 5bl H N E C C NEC UPC1678B UPC1678G UPC1678P 1.9 GHz MEDIUM POWER BROADBAND SILICON MMIC AMPLIFIER ; " T - iq - r 3 , - o i FEATURES UPC1678B/P INSERTION GAIN vs. FREQUENCY • HIGH OUTPUT POWER: +18 dBm Vcc = 5 V


    OCR Scan     		L427414 000Eb5c UPC1678B UPC1678G UPC1678P UPC1678B/P UPC1678 UPC08 UPC1678P PDF

    NE21936

    Abstract: NE21935 equivalent 2SC2367 NE219 NE21900 2SC2869 nec 2sc2218 NE21903 NE21937 2SC22174
    Text: NE C/ CALI FORNI A 1SE D NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES / • LOW NOISE: 1 dB at 0.5 GHz 2.2 dB at 2 GHz ' NE219 SERIES The NE219 series of NPN silicon bipolar transistors is de­ signed for small signal amplifier and oscillator applications up


    OCR Scan     		QG013T3 r-31- NE219 NE21936 NE21935 equivalent 2SC2367 NE21900 2SC2869 nec 2sc2218 NE21903 NE21937 2SC22174 PDF

    1SS14

    Abstract: 1SS156 1SS12 ND4131-5T ND4141 CP 022 ND ND4000 nd4132 743e 1SS15
    Text: N E C / 15E D CALIFORNIA NEC • T -c rj~ ò 1 b45743i4 0001137 b SILICON SCHOTTKY MIXER/DETECTOR DIODE ND4000 SERIES ABSOLl TE MAXIMUM RATINGS FEATURES SYMBOLS • LOW MEDIUM BARRIERS Pt • PASSIVATED CONSTRUCTION • HIGH RELIABILITY Top Tj T sdr DESCRIPTION AND APPLICATIONS


    OCR Scan     		fci427414 ND4000 ND41S1 ND4151 ND4132 1SS14 1SS156 1SS12 ND4131-5T ND4141 CP 022 ND 743e 1SS15 PDF

    NE25337

    Abstract: KR sot-143 NE25339 marking X_j sot u79 018
    Text: N E C / NEC L4574m 1SE D CALIFORNIA DGOlbSÔ 5 GENERAL PURPOSE DUAL-GATE GaAs MESFET FEATURES NE25337 NE25339 OUTLINE DIMENSIONS umtsmmm O U T LIN E 37 • SUITABLE FOR USE AS RF AMPLIFIER AND MIXER IN UHF APPLICATIONS • LOW C r s s : 0.02 pF (TYP) • HIGH Gps : 20 dB (TYP)


    OCR Scan     		NE25337 NE25339 NE253 b4E7414 NE25337, Rn/50 KR sot-143 NE25339 marking X_j sot u79 018 PDF

    NE99532

    Abstract: 2sc3358 NE3005B20 NE85637 NE4201 NE1010E 2SC3358 transistor ne3005b-20 NE1005E NEC 8563
    Text: NEC/ CALIFORNIA 1SE D bMs?m4 D D o m a i a T IM S - T - it- t r NEC NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES T'3h21 FEATURES DESCRIPTION AND APPLICATIONS • H IG H G A IN B A N D W ID T H P R O D U C T : f r = 7 G H z The NE856 series of NPN epitaxial silicon transistors Is de­


    OCR Scan     		NE856 NE99532 NE32700 NE32702 NE32708 NE32740A NE32740B 2sc3358 NE3005B20 NE85637 NE4201 NE1010E 2SC3358 transistor ne3005b-20 NE1005E NEC 8563 PDF

    881-1 nec

    Abstract: NE345L-20B NES1417-20B cd 17821 LA 7687 a sit 16250 NE72084 NE3451600 NES1417-10B NES1723-20B
    Text: N E C / 1SE CALIFORNIA NEC D b4S7414 Q001S37 1 T -S 1 -9 0 L, S-BAND POWER G aAs MESFET NE345 SERIES FEATURES APPLICATIONS • C H IP O R P A C K A G E O P T IO N S • L-BAN D R A D A R • H IG H P out 1 0 W & 2 0 W • N ARRO W -BAN D C O M M U N IC A TIO N S


    OCR Scan     		b4S7414 G001S37 NE345 NE3451600 ofSiOz/SiNs72 S22-S21S12 NE345100 NE3451600 881-1 nec NE345L-20B NES1417-20B cd 17821 LA 7687 a sit 16250 NE72084 NES1417-10B NES1723-20B PDF

    NE02136

    Abstract: 2SC2570 NE02135 equivalent 2sc2570 transistor NE02103 k427 2SC1560 2sc2351 equivalent LM5741 GHZ micro-X Package
    Text: N E C / 1SE D CALIFORNIA r - 3 / '/ 5 b427414 000137S 1 NPN SILICON HIGH FREQUENCY TRANSISTOR T '3 i- I 7 NE021 SERIES FEATURES DESCRIPTION AND APPLICATIONS • HIGH INSERTION GAIN: 18.5 dB at 500 MHz The NE021 series of NPN silicon transistors provides eco­


    OCR Scan     		b427414 000137S NE021 3l-17 NE02136 2SC2570 NE02135 equivalent 2sc2570 transistor NE02103 k427 2SC1560 2sc2351 equivalent LM5741 GHZ micro-X Package PDF

    2SC2340

    Abstract: NE568 MR 6500 BM74 2SC2339 NE56800 NE56803 NE56853 NE56854 NE56857
    Text: NEC/ □427414 0001323 4 1SE D CALIFORNIA r-3 3 -c s NPN MEDIUM POWER MICROWAVE TRANSISTOR NE568 SER IES FEATURES DESCRIPTION AND APPLICATIONS • H IG H fs : 4.2 GHz The NE568 series of NPN silicon medium power transistors is designed for medium power S and C band linear amplifiers


    OCR Scan     		L427414 r-33-0S NE568 NE56800 operate-69 2SC2340 MR 6500 BM74 2SC2339 NE56800 NE56803 NE56853 NE56854 NE56857 PDF

    2SC3584

    Abstract: ne3813 SC358 NE68133 10r 236 NE68100 NE AND "micro-X" el3025 2SC3582 2SC3583
    Text: N E C / CALIFORNIA 1SE NEC J> b427414 OOG144S 7 NPN SILICON HIGH FREQUENCY TRANSISTOR T-3I-& T -3 I-I7 NE68100 NE68132 NE68133 NE68135 NE68137 FEATURES DESCRIPTION AND APPLICATIONS • HIGH GAIN BANDWIDTH PRODUCT: fr = 8 GHz The NE681 series of NPN silicon transistors are designed for


    OCR Scan     		OOG144S NE68100 NE68132 NE68133 NE68135 NE68137 NE68100, NE68135. NE681 2SC3584 ne3813 SC358 10r 236 NE AND "micro-X" el3025 2SC3582 2SC3583 PDF

    2SC2407

    Abstract: nec 2561 equivalent 2SC1255 NE41607 2sc1949 NE41632B NC921 NE41635 2SC2407 equivalent 2SC1592
    Text: N E C/ 1SE CALIFORNIA L4H7414 D 0001310 NPN MEDIUM POWER UHF-VHF TRANSISTOR FEATURES NE416 SERIES DESCRIPTION AND APPLICATIONS The NE416 series of NPN silicon transistors is one of the most versatile and widely used of NEC’s microwave transistors. The series provides economical solutions to a wide range of ampli­


    OCR Scan     		L4H7414 NE416 T-33-Ã 2SC2407 nec 2561 equivalent 2SC1255 NE41607 2sc1949 NE41632B NC921 NE41635 2SC2407 equivalent 2SC1592 PDF

    2SC1593

    Abstract: 2SC1041 GE-64 NEC k 2134 transistor NE64300 NE64310 NE64320 V020 transistor BU 189
    Text: N E C/. C A L I F O R N I A b427414 1SE D 0001343 T i ► rF' î NE64300 NE64310 NE64320 NPN MEDIUM POWER MICROWAVE TRANSISTOR r t FEATURES DESCRIPTION AND APPLICATIONS • H IG H O U T P U T P O W E R : 900 mW at 2 G Hz Th e NE643 series of NPN silicon medium power transistors is


    OCR Scan     		b427414 NE64300 NE64310 NE64320 NE643 NE64300) NE64310) NE64320) 2SC1593 2SC1041 GE-64 NEC k 2134 transistor NE64320 V020 transistor BU 189 PDF

    2SC2340

    Abstract: transistor BJ 102 131 NE56800 2SC2339 NE568 NE56803 NE56853 NE56857 NE56887 ne56853e
    Text: NEC/ 1SE D CALIFORNIA □42 741 4 0001323 4 r-3 3 -c S NPN MEDIUM POWER MICROWAVE TRANSISTOR NE568 S E R IE S FEATURES DESCRIPTION AND APPLICATIONS • H IG H f s : 4.2 G H z The NE568 series of NPN silicon medium power transistors is designed for medium power S and C band linear amplifiers


    OCR Scan     		L427414 r-33-0S NE568 NE56800 2SC2340 transistor BJ 102 131 NE56800 2SC2339 NE56803 NE56853 NE56857 NE56887 ne56853e PDF