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Rochester Electronics LLC 2SK4100LS N-CHANNEL SILICON MOSFET
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DigiKey	2SK4100LS	Bulk			683	1 - 10 - 100 - 1000 $0.44 10000 $0.44	Buy Now
Rochester Electronics LLC 2SK4101FS N-CHANNEL POWER MOSFET
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DigiKey	2SK4101FS	Bulk			567	1 - 10 - 100 - 1000 $0.53 10000 $0.53	Buy Now
Rochester Electronics LLC 2SK4101FS-V-H NCH 10V DRIVE SERIES
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DigiKey	2SK4101FS-V-H	Bulk			188	1 - 10 - 100 - 1000 $1.6 10000 $1.6	Buy Now
Rochester Electronics LLC 2SK4100LS-T-MG5 SWITCHING DEVICE
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DigiKey	2SK4100LS-T-MG5	Bulk			204	1 - 10 - 100 - 1000 $1.48 10000 $1.48	Buy Now
Aptina Imaging 2SK4101FS N-CHANNEL SILICON MOSFET
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Verical	2SK4101FS		811,218		655	1 - 10 - 100 - 1000 $0.541 10000 $0.541	Buy Now

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2SK410 Datasheets (13)

Part	Manufacturer	Description	Datasheet Type	PDF
2SK410	Advanced Semiconductor	Transistor	Original	PDF
2SK410	Hitachi Semiconductor	V(dss): 180V V(gss): ±20V 8A 120W silicon N-channel MOS FET. For HF/VHF amplifier	Original	PDF
2SK410	Hitachi Semiconductor	Power Transistors Data Book	Scan	PDF
2SK410	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
2SK410	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
2SK410	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
2SK410	Unknown	High Frequency Device Data Book (Japanese)	Scan	PDF
2SK410	Unknown	FET Data Book	Scan	PDF
2SK410	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SK4100LS	Sanyo Semiconductor	N-Channel Silicon MOSFET General-Purpose Switching Device	Original	PDF
2SK4101LS	Sanyo Semiconductor	N-Channel Silicon MOSFET General-Purpose Switching Device	Original	PDF
2SK4107	Toshiba	Switching Regulator Applications	Original	PDF
2SK4108	Toshiba	Silicon N-Channel MOS Type Switching Regulator Applications	Original	PDF

2SK410 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2SK4105 Abstract: K4105 2SK41 K-410 Text: 2SK4105 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK4105 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75 Ω (typ.) High forward transfer admittance: \|Yfs\| = 6.5 S (typ.)	Original	PDF	2SK4105 SC-67 2-10R1B 2SK4105 K4105 2SK41 K-410
2SK4103 Abstract: 2SK41 MOSFET 500V 5A Text: TOSHIBA Semiconductor Company \| Data Sheet Search \| Product Details Page 1 of 1 Products Search Product Search: Enter a Part Number or Description Category Top \| Refine Search \| Results \| Product Details Part Number: 2SK4103 Category: Transistors /Power MOSFET/Nch 250V<VDSS 500V	Original	PDF	2SK4103 2SK4103 16-Apr-09 2SK41 MOSFET 500V 5A
toshiba k4108 Abstract: k4108 2SK4108 toshiba 2sk4108 SC-65 Text: 2SK4108 東芝電界効果トランジスタシリコンNチャネルMOS形 π−MOSⅥ 2SK4108 ○ スイッチングレギュレータ用単位: mm • オン抵抗が低い。 • 順方向伝達アドミタンスが高い。 : \|Yfs\| = 14 S (標準)	Original	PDF	2SK4108 SC-65 2-16C1B toshiba k4108 k4108 2SK4108 toshiba 2sk4108 SC-65
toshiba k4108 Abstract: k4108 2SK4108 toshiba 2sk4108 transistor k4108 transistor Toshiba K4108 Text: 2SK4108 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS VI 2SK4108 Unit: mm Switching Regulator Applications z Low drain−source ON resistance : RDS (ON) = 0. 21Ω (typ.) z High forward transfer admittance : \|Yfs\| = 14 S (typ.) : IDSS = 100 A (max) (VDS = 500 V)	Original	PDF	2SK4108 150lled toshiba k4108 k4108 2SK4108 toshiba 2sk4108 transistor k4108 transistor Toshiba K4108
2SK4103 Abstract: K4103 Text: 2SK4103 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK4103 Switching Regulator Applications Unit: mm Absolute Maximum Ratings (Ta = 25°C) Unit Drain-source voltage VDSS 500 V Drain-gate voltage (RGS = 20 kΩ) VDGR 500 V Gate-source voltage	Original	PDF	2SK4103 2SK4103 K4103
K4103 Abstract: 2SK4103 Text: 2SK4103 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK4103 Switching Regulator Applications Unit: mm Absolute Maximum Ratings (Ta = 25°C) Unit Drain-source voltage VDSS 500 V Drain-gate voltage (RGS = 20 kΩ) VDGR 500 V Gate-source voltage	Original	PDF	2SK4103 K4103 2SK4103
2sk410 Abstract: Hitachi DSA00382 Text: 2SK410 Silicon N-Channel MOS FET Application HF/VHF power amplifier Features • • • • • • • High breakdown voltage You can decrease handling current. Included gate protection diode No secondary–breakdown Wide area of safe operation Simple bias circuitry	Original	PDF	2SK410 2sk410 Hitachi DSA00382
K4101 Abstract: equivalent transistor for K4101 2SK4101LS K4101 equivalents Text: 2SK4101LS Ordering number : ENA0745 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4101LS General-Purpose Switching Device Applications Features • • • • Low ON-resistance, low input capacitance, ultrahigh-speed switching. High reliability Adoption of HVP process .	Original	PDF	2SK4101LS ENA0745 A0745-5/5 K4101 equivalent transistor for K4101 2SK4101LS K4101 equivalents
K4103 Abstract: 2SK4103 2SK4103,K4103 Text: 2SK4103 東芝電界効果トランジスタシリコンNチャネルMOS形 π−MOSVI 2SK4103 ○ スイッチングレギュレータ用単位: mm : RDS (ON) = 1.35 Ω (標準) z オン抵抗が低い。 5.2 ± 0. 2 z 順方向伝達アドミタンスが高い。 : \|Yfs\| = 2.8 S (標準)	Original	PDF	2SK4103 K4103 2SK4103 2SK4103,K4103
K4100 Abstract: 2SK4100ls 2sk4100 transistor k4100 mosfet k4100 K4100 DATASHEET DSA0028595 Text: 2SK4100LS Ordering number : ENA0778 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4100LS General-Purpose Switching Device Applications Features • • • • Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process.	Original	PDF	2SK4100LS ENA0778 A0778-5/5 K4100 2SK4100ls 2sk4100 transistor k4100 mosfet k4100 K4100 DATASHEET DSA0028595
2SK4105 Abstract: Power MOSFET, toshiba TO220-NIS Text: TOSHIBA Semiconductor Company \| Data Sheet Search \| Product Details Page 1 of 1 Products Search Product Search: Enter a Part Number or Description Category Top \| Refine Search \| Results \| Product Details Part Number: 2SK4105 Category: Transistors /Power MOSFET/Nch 250V<VDSS 500V	Original	PDF	2SK4105 O-220NIS 2SK4105 16-Apr-09 Power MOSFET, toshiba TO220-NIS
Untitled Abstract: No abstract text available Text: 2SK4101LS Ordering number : ENA0745A N-Channel Silicon MOSFET 2SK4101LS General-Purpose Switching Device Applications Features • • • • Low ON-resistance, low input capacitance, ultrahigh-speed switching. High reliability Adoption of HVP process .	Original	PDF	2SK4101LS ENA0745A 2SK4101LS/D
toshiba k4108 Abstract: K4108 toshiba 2sk4108 2SK4108 transistor Toshiba K4108 transistor k4108 2SK410 Text: 2SK4108 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS VI 2SK4108 Switching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 0. 21Ω (typ.) z High forward transfer admittance : \|Yfs\| = 14 S (typ.) z Low leakage current	Original	PDF	2SK4108 toshiba k4108 K4108 toshiba 2sk4108 2SK4108 transistor Toshiba K4108 transistor k4108 2SK410
K4103 Abstract: 2SK4103 TOSHIBA 2SK4103 toshiba marking code transistor 2SK4103 equivalent marking code c 9 toshiba Text: 2SK4103 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK4103 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35Ω (typ.) High forward transfer admittance: \|Yfs\| = 2.8S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)	Original	PDF	2SK4103 K4103 2SK4103 TOSHIBA 2SK4103 toshiba marking code transistor 2SK4103 equivalent marking code c 9 toshiba

Untitled Abstract: No abstract text available Text: 2SK4107 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS VI 2SK4107 ○ Switching Regulator Applications • Low drain−source ON resistance Unit: mm : RDS (ON) = 0. 33 Ω (typ.) • High forward transfer admittance : \|Yfs\| = 8.5 S (typ.)	Original	PDF	2SK4107
k4101 Abstract: 2SK4101LS equivalent transistor for K4101 2SK410 2SK4101 K4101 equivalents Text: 2SK4101LS Ordering number : ENA0745A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4101LS General-Purpose Switching Device Applications Features • • • • Low ON-resistance, low input capacitance, ultrahigh-speed switching. High reliability Adoption of HVP process .	Original	PDF	2SK4101LS ENA0745A A0745-5/5 k4101 2SK4101LS equivalent transistor for K4101 2SK410 2SK4101 K4101 equivalents
U 318 m Abstract: No abstract text available Text: 2SK410 SILICON N-CHANNEL MOS FET PACKAGE STYLE .500 6L FLG DESCRIPTION: A C 1 3 The ASI 2SK410 is a silicon n-channel mos fet designed for HF/VHF power amplifier applications. 2x Ø N FU LL R D 2 B FEATURES: .725/18,42 F G • PG = 17 dB typ. at 100 W/28 MHz	Original	PDF	2SK410 2SK410 U 318 m
k4107 Abstract: toshiba k4107 2SK4107 K4107 POWER TRANSISTOR toshiba 2sk4107 toshiba transistor k4107 *k4107 Text: 2SK4107 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS VI 2SK4107 ○ Switching Regulator Applications • Low drain−source ON resistance Unit: mm : RDS (ON) = 0. 33 Ω (typ.) • High forward transfer admittance : \|Yfs\| = 8.5 S (typ.)	Original	PDF	2SK4107 k4107 toshiba k4107 2SK4107 K4107 POWER TRANSISTOR toshiba 2sk4107 toshiba transistor k4107 *k4107
K4101 Abstract: 2SK4101LS 2SK4101 k4101 mosfet N0707 IT12223 IT12227 Text: 2SK4101LS 注文コード No. N A 0 7 4 5 B 三洋半導体データシート半導体データシート No.NA0745A をさしかえてください。 2SK4101LS N チャネル MOS 型シリコン電界効果トランジスタ汎用スイッチングデバイス	Original	PDF	2SK4101LS NA0745A K4101 N0707 IT12224 IT12225 IT12226 IT12227 IT10478 K4101 2SK4101LS 2SK4101 k4101 mosfet IT12223 IT12227
2SK4106 Abstract: TO220-NIS package Text: TOSHIBA Semiconductor Company \| Data Sheet Search \| Product Details Page 1 of 1 Products Search Product Search: Enter a Part Number or Description Category Top \| Refine Search \| Results \| Product Details Part Number: 2SK4106 Category: Transistors /Power MOSFET/Nch 250V<VDSS 500V	Original	PDF	2SK4106 O-220NIS 2SK4106 16-Apr-09 TO220-NIS package
2SK425 Abstract: 2sk414 2sk495 2SK405 2SK500 2SK426 2SK431 2SK470 2SK424 2SK433 Text: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) ID Pd/Pch Tj/Tch min 2SK401 2SK402 2SK403 2SK404 2SK405 2SK406 2SK407 2SK408 2SK409 2SK410 2SK411 2SK412 2SK413 2SK414 2SK415 2SK416 2SK417 2SK418	Original	PDF	2SK401 2SK402 2SK403 2SK404 2SK405 2SK406 2SK407 2SK408 2SK409 2SK410 2SK425 2sk414 2sk495 2SK405 2SK500 2SK426 2SK431 2SK470 2SK424 2SK433
2SK4101 Abstract: K4101 K4101FS 2SK4101FS a1366 K410 N2608QB Text: 2SK4101FS Ordering number : ENA1366A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4101FS General-Purpose Switching Device Applications Features • • • • Low ON-resistance. High-speed switching. 10V drive. Avalanche resistance guarantee.	Original	PDF	2SK4101FS ENA1366A PW10s, A1366-5/5 2SK4101 K4101 K4101FS 2SK4101FS a1366 K410 N2608QB
K4101 Abstract: A1365 2SK4101FG equivalent transistor for K4101 k-410 7529 K4101 equivalents N2608QB 2sk4101 Text: 2SK4101FG Ordering number : ENA1365 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4101FG General-Purpose Switching Device Applications Features • • • • Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process.	Original	PDF	2SK4101FG ENA1365 A1365-6/6 K4101 A1365 2SK4101FG equivalent transistor for K4101 k-410 7529 K4101 equivalents N2608QB 2sk4101
2SK425 Abstract: 2sk423 2SK424 2SK530 2SK422 2SK426 2SK407 2SK425-13 2SK428 2SK433 Text: A f m s 2SK406 2SK407 2SK408 2SK409 2SK410 2SK411 2SK412 2SK413 2SK414 2SK415 2SK416 L (S) 2SK417 2SK418 2SK419 2SK420 2SK421 2SK422 2SK423 2SK424 2SK425 2SK426 2SK427 2SK428 2SK429(L)(S) 2SK430(L) (S) 2SK431 ' 2SK433 2SK435 2SK436 2SK437 a NEC NEC U aL BÍL	OCR Scan	PDF	2SK406 2SK407 2SK408 2SK409 2SK410 2SK531 2SK421 2SK422 2SK423 2SK424 2SK425 2sk423 2SK424 2SK530 2SK422 2SK426 2SK425-13 2SK428 2SK433

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2SK410 Price and Stock

Rochester Electronics LLC 2SK4100LS

Rochester Electronics LLC 2SK4101FS

Rochester Electronics LLC 2SK4101FS-V-H

Rochester Electronics LLC 2SK4100LS-T-MG5

Aptina Imaging 2SK4101FS

2SK410 Datasheets (13)

2SK410 Datasheets Context Search

2SK4105

2SK4103

toshiba k4108

toshiba k4108

2SK4103

K4103

2sk410

K4101

K4103

K4100

2SK4105

Untitled

toshiba k4108

K4103

Untitled

k4101

U 318 m

k4107

K4101

2SK4106

2SK425

2SK4101

K4101

2SK425