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    2SK41 Search Results

    2SK41 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SK4145-S19-AY Renesas Electronics Corporation Switching N-Channel Power Mosfet, MP-25LK, /Tube Visit Renesas Electronics Corporation
    2SK4146-S19-AY Renesas Electronics Corporation Switching N-Channel Power Mosfet, MP-25LK, /Tube Visit Renesas Electronics Corporation
    2SK4178-ZK-E1-AY Renesas Electronics Corporation Switching N-Channel Power Mosfet Visit Renesas Electronics Corporation
    2SK4143-S17-AY Renesas Electronics Corporation Switching N-Channel Power Mosfet, TO-220, /Tube Visit Renesas Electronics Corporation
    2SK4150TZ-E Renesas Electronics Corporation Nch Single Power Mosfet 250V 0.4A 5700Mohm To-92(1) Visit Renesas Electronics Corporation
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    2SK41 Price and Stock

    onsemi 2SK4124

    MOSFET N-CH 500V 20A TO3PB
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    DigiKey 2SK4124 Tray 100
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    onsemi 2SK4177-E

    MOSFET N-CH 1500V 2A SMP-FD
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    onsemi 2SK4117LS

    MOSFET N-CH 400V 10.4A TO220FI
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    DigiKey 2SK4117LS Bag 200
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    onsemi 2SK4116LS

    MOSFET N-CH 400V 8.9A TO220FI
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    onsemi 2SK4198LS

    MOSFET N-CH 600V 5A TO220FI
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    2SK41 Datasheets (157)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK41 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK41 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SK41 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SK41 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SK41 Unknown FET Data Book Scan PDF
    2SK41 Sanyo Semiconductor Sanyo Datasheets, Cross References and Circuit Examples Scan PDF
    2SK41 Sanyo Semiconductor Discontinued Transistors Scan PDF
    2SK41 Semico N-Channel Junction Field Effect Transistors Scan PDF
    2SK410 Advanced Semiconductor Transistor Original PDF
    2SK410 Hitachi Semiconductor V(dss): 180V V(gss): ±20V 8A 120W silicon N-channel MOS FET. For HF/VHF amplifier Original PDF
    2SK410 Hitachi Semiconductor Power Transistors Data Book Scan PDF
    2SK410 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK410 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK410 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK410 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    2SK410 Unknown FET Data Book Scan PDF
    2SK410 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK4100LS Sanyo Semiconductor N-Channel Silicon MOSFET General-Purpose Switching Device Original PDF
    2SK4101LS Sanyo Semiconductor N-Channel Silicon MOSFET General-Purpose Switching Device Original PDF
    2SK4107 Toshiba Switching Regulator Applications Original PDF
    ...

    2SK41 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SK41

    Abstract: k4114
    Text: 2SK4114 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSIV 2SK4114 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 2.2 Ω (typ.) High forward transfer admittance: |Yfs| = 3.5 S (typ.)


    Original
    PDF 2SK4114 2SK41 k4114

    2SK4105

    Abstract: K4105 2SK41 K-410
    Text: 2SK4105 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK4105 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75 Ω (typ.) High forward transfer admittance: |Yfs| = 6.5 S (typ.)


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    PDF 2SK4105 SC-67 2-10R1B 2SK4105 K4105 2SK41 K-410

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4148 SWITCHING N-CHANNEL MOSFET DESCRIPTION PACKAGE DRAWING Unit: mm The 2SK4148 is a switching element that is most suitable for use in φ 5.2 MAX. DC-DC converter whose DC input voltage is 24 to 48 V. 5.5 MAX.


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    PDF 2SK4148 2SK4148

    Untitled

    Abstract: No abstract text available
    Text: 2SK4124 Ordering number : ENA0746A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4124 General-Purpose Switching Device Applications Features • • • Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process.


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    PDF 2SK4124 ENA0746A A0746-5/5

    Untitled

    Abstract: No abstract text available
    Text: 2SK4125 Ordering number : ENA0747A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4125 General-Purpose Switching Device Applications Features • • • Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process.


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    PDF 2SK4125 ENA0747A A0747-5/5

    2SK4103

    Abstract: 2SK41 MOSFET 500V 5A
    Text: TOSHIBA Semiconductor Company | Data Sheet Search | Product Details Page 1 of 1 Products Search Product Search: Enter a Part Number or Description Category Top | Refine Search | Results | Product Details Part Number: 2SK4103 Category: Transistors /Power MOSFET/Nch 250V<VDSS 500V


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    PDF 2SK4103 2SK4103 16-Apr-09 2SK41 MOSFET 500V 5A

    toshiba k4108

    Abstract: k4108 2SK4108 toshiba 2sk4108 SC-65
    Text: 2SK4108 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅥ 2SK4108 ○ スイッチングレギュレータ用 単位: mm • オン抵抗が低い。 • 順方向伝達アドミタンスが高い。 : |Yfs| = 14 S (標準)


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    PDF 2SK4108 SC-65 2-16C1B toshiba k4108 k4108 2SK4108 toshiba 2sk4108 SC-65

    toshiba k4108

    Abstract: k4108 2SK4108 toshiba 2sk4108 transistor k4108 transistor Toshiba K4108
    Text: 2SK4108 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS VI 2SK4108 Unit: mm Switching Regulator Applications z Low drain−source ON resistance : RDS (ON) = 0. 21Ω (typ.) z High forward transfer admittance : |Yfs| = 14 S (typ.) : IDSS = 100 A (max) (VDS = 500 V)


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    PDF 2SK4108 150lled toshiba k4108 k4108 2SK4108 toshiba 2sk4108 transistor k4108 transistor Toshiba K4108

    K4115 toshiba

    Abstract: TRANSISTOR K4115 k4115 2SK4115 K4115 toshiba transistor DSAE002454 toshiba k4115 2SK4115* equivalent k411 SC-65
    Text: 2SK4115 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π- MOSⅣ 2SK4115 Switching Regulator Applications Unit: mm Absolute Maximum Ratings (Ta = 25°C) 20.0±0.3 Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 2.0 • 9.0 High forward transfer admittance: ⎪Yfs⎪ = 5.0 S (typ.)


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    PDF 2SK4115 K4115 toshiba TRANSISTOR K4115 k4115 2SK4115 K4115 toshiba transistor DSAE002454 toshiba k4115 2SK4115* equivalent k411 SC-65

    2SK4103

    Abstract: K4103
    Text: 2SK4103 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK4103 Switching Regulator Applications Unit: mm Absolute Maximum Ratings (Ta = 25°C) Unit Drain-source voltage VDSS 500 V Drain-gate voltage (RGS = 20 kΩ) VDGR 500 V Gate-source voltage


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    PDF 2SK4103 2SK4103 K4103

    K4124

    Abstract: 2SK4124 IT12247
    Text: 2SK4124 Ordering number : ENA0746 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4124 General-Purpose Switching Device Applications Features • • • Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process.


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    PDF 2SK4124 ENA0746 A0746-5/5 K4124 2SK4124 IT12247

    200v 5A mosfet

    Abstract: 2sk4198 2SK4198LS k4198 K419
    Text: 2SK4198LS Ordering number : ENA1171 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4198LS General-Purpose Switching Device Applications Features • • • • Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process.


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    PDF 2SK4198LS ENA1171 A1171-5/5 200v 5A mosfet 2sk4198 2SK4198LS k4198 K419

    A1009

    Abstract: a1009,1 A10093 2SK4183 RL307
    Text: 2SK4183 Ordering number : ENA1009 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4183 General-Purpose Switching Device Applications Features • • • • Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process.


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    PDF 2SK4183 ENA1009 PW10s, 100nformation A1009-4/4 A1009 a1009,1 A10093 2SK4183 RL307

    2SK4171

    Abstract: 75070-02
    Text: 2SK4171 Ordering number : ENA0787 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4171 General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Load switching applications. Motor drive applications. Avalanche resistance guarantee.


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    PDF 2SK4171 ENA0787 A0787-5/5 2SK4171 75070-02

    Package Marking .8A

    Abstract: A1223 2SK4197LS 2sk4197
    Text: 2SK4197LS Ordering number : ENA1223 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4197LS General-Purpose Switching Device Applications Features • • • • Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process.


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    PDF 2SK4197LS ENA1223 A1223-5/5 Package Marking .8A A1223 2SK4197LS 2sk4197

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA1368B 2SK4197FS N-Channel Power MOSFET http://onsemi.com 600V, 3.5A, 3.25Ω, TO-220F-3FS Features • • • ON-reistance RDS on =2.5Ω(typ.) Input capacitance Ciss=260pF(typ.) 10V drive TO-220F-3FS Specifications Absolute Maximum Ratings at Ta=25°C


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    PDF ENA1368B 2SK4197FS O-220F-3FS 260pF A1368-5/5

    K4124

    Abstract: No abstract text available
    Text: 2SK4124 Ordering number : ENA0746C SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4124 General-Purpose Switching Device Applications Features • • • Low ON-resistance, low input capacitance, ultrahigh-speed switching Adoption of high reliability HVP process


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    PDF ENA0746C 2SK4124 PW10s, A0746-7/7 K4124

    Untitled

    Abstract: No abstract text available
    Text: 2SK4116LS Ordering number : ENA0790A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4116LS General-Purpose Switching Device Applications Features • • • • Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process.


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    PDF ENA0790A 2SK4116LS A0790-5/5

    2SK4123LS

    Abstract: K4123
    Text: 2SK4123LS Ordering number : ENA0826 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4123LS General-Purpose Switching Device Applications Features • • • • Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process.


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    PDF 2SK4123LS ENA0826 A0826-4/4 2SK4123LS K4123

    2SK4120LS

    Abstract: No abstract text available
    Text: 2SK4120LS Ordering number : ENA0823 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4120LS General-Purpose Switching Device Applications Features • • • • Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process.


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    PDF 2SK4120LS ENA0823 A0823-4/4 2SK4120LS

    2SJ120

    Abstract: B20S 2SK416 J120
    Text: bl E D 4^b20S ODIS^G ObS IHIT4 2 S J 1 2 C X L , 2 S J 1 2 0 S HITA C HI/ OPTOELECTRONICS) SILICON P-CHANNEL MOS FET H <pType <S>Type H IG H S P E E D P O W E R S W IT C H IN G , H IG H FREQUENCY PO W ER AM PLIFIER Complementary pair with 2SK416 • FEATU RES


    OCR Scan
    PDF 2SJ120L, 2SJ120S 2SK416 0G15TEE 2SJ120 B20S 2SK416 J120

    2U 73 diode

    Abstract: No abstract text available
    Text: 73 HITACHI/-COPTOELECTRONICS} 449b2Ub H i I A U H 1 / COP f U h L E C T K U N 1 U S 2SK412 D e J M 4 cib5üS □ □ 1 0 0 5 1 7 73C 10059 ' D T - 3 ? “/3 - SILICON N-CHANNEL MOS FET HIGH SPEED POWER SW ITCHING, HIGH FREQUENCY POWER AMPLIFIER • FEATURES


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    PDF 449b2Ub 2SK412 2U 73 diode

    2SK415

    Abstract: No abstract text available
    Text: 2SK415 SILICON N-CHANNEL MOS FET y U = 3 > N » r * JUMOS FET HIGH SPEED POWER SWITCHING IB 1. *f 2. \ : G a te K ^ A > ' D ra in 7 7 V ÿ (F la n g e ) 3. */ —• X .* S o u rc e ( D im e n s io n s in mm) (TO-3P) ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)


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    PDF 2SK415 2SK415 I-150 Ta-25Â t-15n

    Voltaire

    Abstract: 2SJ118 terre 2SJ11 2SJ119 2SK413 2SK414
    Text: 2 S J 1 1 8 ,2 S J 1 1 9 SILICON P C H A N N E L M O S F E T 2SK413. 2 S K 4 U t 3 s'? • > > 9 ') * 7 • *5 ft • t vffifòOi&l*. ig u A SO ) # £ * ' • ±aiü]— !— U sa i , » D r i- •x - f v f D C - D C 3 V / < - ? , i - ? 3 y h D fT 0 -3 P |


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    PDF 2SJ118, 2SJ119 2SK413. Voltaire 2SJ118 terre 2SJ11 2SJ119 2SK413 2SK414