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    IXFH24N50 Price and Stock

    IXYS Corporation IXFH24N50

    MOSFET N-CH 500V 24A TO247AD
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    IXYS Corporation IXFH24N50Q

    MOSFET N-CH 500V 24A TO247AD
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    IXFH24N50 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXFH24N50 IXYS 500V HiPerFET power MOSFET Original PDF
    IXFH24N50 IXYS HiperFET Power MOSFETS Scan PDF
    IXFH24N50 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IXFH 24N50Q IXYS TRANS MOSFET N-CH 500V 24A 3TO-247 AD Original PDF
    IXFH24N50Q IXYS 500V HiPerFET power MOSFET Q-class Original PDF

    IXFH24N50 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: IXFH24N50 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V)20 I(D) Max. (A)24# I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)96# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)300# Minimum Operating Temp (øC)-55


    Original     		IXFH24N50 Junc-Case420m PDF

    Untitled

    Abstract: No abstract text available
    Text: IXFH24N50S Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V)20 I(D) Max. (A)24# I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)96 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)300# Minimum Operating Temp (øC)-55õ


    Original     		IXFH24N50S PDF

    Untitled

    Abstract: No abstract text available
    Text: HiPerFET Power MOSFET IXFH24N50S VDSS ^D25 = 500 V = 24 A RDS on = 0.23 Cl < 250 ns tr r Surface Mountable N-Channel Enhancement-Mode Avalanche Rated, High dv/dt, Low trr Preliminary data Symbol Test Conditions Maximum Ratings VDSS Td = 25°C to 175°C


    OCR Scan     		IXFH24N50S O-247 HDMO190 1250C 24N50S 24N50 D94010DE, PDF

    24N50S

    Abstract: smd JH IXFH24N50S D2528
    Text: HiPerFET Power MOSFET IXFH24N50S VDSS D25 RDS on Surface Mountable N-Channel Enhancement-Mode Avalanche Rated, High dv/dt, Low trr t rr =s500 V = 24 A = 0.23 Cl < 250 ns Preliminary data Symbol Maximum Ratings . te s t Conditions v DSS Tj = 25 Cto l7 5 bC


    OCR Scan     		IXFH24N50S 175bC O-247 24N50S 24N50 D94010DE, Mbflb22b smd JH D2528 PDF

    IXFH21N50

    Abstract: No abstract text available
    Text: HiPerFET Power MOSFETs IXFH/IXFM21N50 IXFH/IXFM/IXFT24N50 IXFH/IXFT26N50 N-Channel Enhancement Mode High dv/dt, L o w trr, HDM O S™ Family Maximum Ratings Test Conditions V DSS T d = 25°C to 150°C 500 V v DGR T d = 25°C to 150°C; RGS = 1 M£i 500


    OCR Scan     		IXFH/IXFM21N50 IXFH/IXFM/IXFT24N50 IXFH/IXFT26N50 O-247 IXFT24N50 IXFH26N50 IXFM26N50 IXFT26N50 IXFH21N50 PDF

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


    Original     		STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640 PDF

    dioda by 238

    Abstract: 1xys 1XFM67N10 HiperFET IXFN50N25 IXFM50N20 IXFM6N90 IXFH40N30 IXFH10N100 IXFH11N100
    Text: I X Y S CORP IñE D • 4bflb22b 0000573 1 ■ HiPerFETs_ The HiPerFET family of Power MOSFETs is designed to provide superior dv/dt performance while eliminating the need for discrete, fast recovery "free wheeling" rectifiers in a broad range of power switching


    OCR Scan     		0D00S73 dioda by 238 1xys 1XFM67N10 HiperFET IXFN50N25 IXFM50N20 IXFM6N90 IXFH40N30 IXFH10N100 IXFH11N100 PDF

    IXFH32N50Q equivalent

    Abstract: ixfk24n100 IXFD80N20Q-8X IXFN80N50 1672 mos-fet IXFH40N30
    Text: HiPerFETTM Power MOSFET Chips N-Channel Enhancement-Mode with Fast Intrinsic Diode Type VDSS max. TJM = 150°C RDS on @ ID max. Ciss trr max. Chip type Chip size dimensions Source ¬ bond wire recommend Equivalent device data sheet Dim. outline No. V Ω


    Original     		IXFD50N20-7X IXFD50N20Q-7X IXFD80N20Q-8X IXFD90N20Q-8Y IXFD120N20-9X IXFD180N20-9Y IXFD60N25Q-8X IXFD100N25-9X IXFD40N30-7X IXFD40N30Q-7X IXFH32N50Q equivalent ixfk24n100 IXFN80N50 1672 mos-fet IXFH40N30 PDF

    IXFC24N50

    Abstract: IXFH24N50
    Text: ADVANCED TECHNICAL INFORMATION HiPerFETTM MOSFET IXFC24N50 VDSS ID25 RDS on trr ISOPLUS220TM Electrically Isolated Back Surface ISOPLUS 220TM Symbol Test Conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 500 V Maximum Ratings


    Original     		IXFC24N50 ISOPLUS220TM 220TM IXFH24N50 IXFC24N50 PDF

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS PDF

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor PDF

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


    Original     		AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696 PDF

    gs 1117 ax

    Abstract: 1XFH Diode SMD SJ 97 Diode SMD SJ 24 Diode SMD SJ 0B
    Text: v DSS HiPerFET Power MOSFETs DS on 500 V 21 A 0.25 a 500 V 24 A 0.23 Q 500 V 26 A 0.20 il IXFH/IXFM21 N50 IXFH/IXFM 24 N50 IXFH26N50 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family p ^D25 t„ < 250 ns ?D G As Maximum Ratings Symbol Test Conditions


    OCR Scan     		IXFH/IXFM21 IXFH26N50 21N50 24N50 26N50 gs 1117 ax 1XFH Diode SMD SJ 97 Diode SMD SJ 24 Diode SMD SJ 0B PDF

    IRF540 complementary

    Abstract: IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR
    Text: Sales type RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L RFP25N05 RFP14N05 HUF75344P3 HUF75344S3S HUF75345S3S HUF75345G3 HUF75343S3S HUF75307D3S HUF75344G3 HUF75345P3 HUF75343P3 HUF5343G3 HUF75321P3 HUF75329P3


    Original     		RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L IRF540 complementary IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR PDF

    IXFd50n20

    Abstract: IXGD32N60B IXFD75N10 IXTD5N100 IXTH40N25 91x0 IXGH25N120A IXTD5N100-5T IXGD32N60B-5X IXGD8N100-2L
    Text: Chips and DCB Ceramic Substrates Contents Page General Information for Chips IGBT Chips J-2 VCES IC VCE sat G-Series, Low VCE(sat) type G-Series, High Speed type 600 - 1200 V 600 - 1200 V 10 - 60 A 10 - 100 A 1.8 - 3.5 V 2.5 - 4.0 V J-3 S-Series, Low VCE(sat) type


    Original     		PDF

    30n50 mosfet

    Abstract: DSE119-06AS VM0400-02F MCC SMD DIODE 300-06DA smd43 35-06AS 500-06DA 250-12DA mosfet p channel
    Text: Contents Insulated Gate Bipolar Transistors IGBT Package style vCES Tc = 2S°C 2. TO-247 SMD 1a. TO-263AA 2a. TO-247 SMD Page A V 1 600 20 48 3.0 2.7 3 600 60 2.5 2 600 75 2.7 1 600 20 20 2.5 3.0 600 48 60 60 2.7 2.9 2.5 600 16 25 16 2.5 600 48 2.7 7 600


    OCR Scan     		O-263 O-263AA O-247 IXGA10N60A IXGA24N60A IXGH32N60B IXGH50N60AS IXGA10N60U1 30n50 mosfet DSE119-06AS VM0400-02F MCC SMD DIODE 300-06DA smd43 35-06AS 500-06DA 250-12DA mosfet p channel PDF

    21n50

    Abstract: IXFH21N50
    Text: HiPerFET Power MOSFETs VDSS IXFH/IXFT 21N50 IXFH/IXFT 24N50 IXFH/IXFT 26N50 V DSS Tj =25°Cto150°C 500 V vDQB Tj = 25° C to 150° C; RGS= 1 Mi2 500 V V os Continuous ±20 V vGSM Transient ±30 V 21 24 26 84 96 104 21 24 26 A A A A A A A A A 30 mJ 5 V/ns


    OCR Scan     		21N50 24N50 26N50 Cto150 26N50 IXFH21N50 PDF

    ixfh26n60q

    Abstract: 2SK2333 2SK2761 IRF1405 BUZ345 BSS89 irfp250n P9NB60 irfp260n 2sk2671
    Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi N-MOSFET copTMpoBKa no HanpflweHMro UDS Kofl: SI4466DY SI4966DY SI9925DY SI9942DY 2SK1388 IRF7319 IRF7413 IRF7455 IRL2203N IRL3103 IRL3713 IRL3803 IRL3803S IRLL2703 SI4404DY SI4412ADY


    OCR Scan     		SI4466DY SI4966DY SI9925DY SI9942DY 2SK1388 T0220AB IRF7319 IRF7413 IRF7455 IRL2203N ixfh26n60q 2SK2333 2SK2761 IRF1405 BUZ345 BSS89 irfp250n P9NB60 irfp260n 2sk2671 PDF

    SSH6N80

    Abstract: rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50
    Text: Sales type BUZ10 BUZ11 BUZ11A BUZ71 BUZ71A BUZ72A BUZ80A IRF520 IRF530 IRF540 IRF620 IRF630 IRF640 IRF730 IRF740 IRF820 IRF830 IRF840 IRFBC30 IRFBC40 IRFZ40 MTP3055E STB10NA40 STB10NB20 STB10NB50 STB11NB40 STB15N25 STB16NB25 STB18N20 STB19NB20 STB30N10 STB36NE03L


    Original     		BUZ10 BUZ11 BUZ11A BUZ71 BUZ71A BUZ72A BUZ80A IRF520 IRF530 IRF540 SSH6N80 rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50 PDF

    24n50

    Abstract: IXFH26N50 IXFH24N50 IXFH21N50 .24n50 21N50 26N50 IXFM21N50 IXYS IXFH26N50
    Text: HiPerFETTM Power MOSFETs VDSS IXFH/IXFM21N50 IXFH/IXFM/IXFT24N50 IXFH/IXFT26N50 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V V GS


    Original     		IXFH/IXFM21N50 IXFH/IXFM/IXFT24N50 IXFH/IXFT26N50 24n50 IXFH26N50 IXFH24N50 IXFH21N50 .24n50 21N50 26N50 IXFM21N50 IXYS IXFH26N50 PDF

    IXFD14N80

    Abstract: CMP 3.48 ixfh50n20 1XFH12N90 IXFN170N10 diode 348 IXFD110N20 IXFD76N07-12 IXFD21N50 IXFH21N50
    Text: OIXYS HiPerFET Power MOSFET Chips N-Channel Enhancement-Mode with Fast Intrinsic Diode Type v c * D6S tN BL tn CMp max *yp * Chip elze Source 3 b e n tlw li« Equivalent device dutaahaet T * * tS O * G out­ line NO PF na 70 0.012 5 4400 200 IX77 8 .8 4 x 7 .1 9


    OCR Scan     		IXFD76N07-12 XFD67N10 IXFD75N10 IXFD170N10 IXFD42N20 IXFD50N20 IXFD68N20 1XFD90N20Q IXFD110N20 IXFD35N30 IXFD14N80 CMP 3.48 ixfh50n20 1XFH12N90 IXFN170N10 diode 348 IXFD76N07-12 IXFD21N50 IXFH21N50 PDF

    IXFH21N50

    Abstract: IXFH24N50 0225 21N50 24N50 26N50 IXFM21N50
    Text: HiPerFETTM Power MOSFETs VDSS IXFH/IXFM21N50 IXFH/IXFM/IXFT24N50 IXFH/IXFT26N50 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS


    Original     		IXFH/IXFM21N50 IXFH/IXFM/IXFT24N50 IXFH/IXFT26N50 O-247 IXFH21N50 IXFH24N50 0225 21N50 24N50 26N50 IXFM21N50 PDF

    220v AC voltage stabilizer schematic diagram

    Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585


    Original     		AD9272 P462-ND LNG295LFCP2U P463-ND LNG395MFTP5U 220v AC voltage stabilizer schematic diagram LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx PDF

    MOSFET 6N100

    Abstract: 26n50 N06 MOSFET 6n90 transistor ixfh application note mosfet 24n50 transistor equivalent mosfet 24n50 IXFH26N50 76N06 24N50
    Text: IXFH 76N06 Preliminary Data IXFH 76N06 IXFH 76N07-11 IXFH 76N07-12 HiPerFETTM Power MOSFETs IXFH 76N07-11 IXFH 76N07-12 VDSS ID25 RDS on trr 60 V 70 V 70 V 76 A 76 A 76 A 11 mΩ 11 mΩ 12 mΩ 150 ns 150 ns 150 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family


    Original     		76N06 76N07-11 76N07-12 O-247 6N100 6N100 D-68623 MOSFET 6N100 26n50 N06 MOSFET 6n90 transistor ixfh application note mosfet 24n50 transistor equivalent mosfet 24n50 IXFH26N50 76N06 24N50 PDF