MBFLB22B Search Results

Contextual Info: ISOSMART IGBT Module VIE200-12S4 lc = 200 A VCES = 1200 V Intelligent Power Module IPM with integrated galvanic isolation interface High Sh ort Circuit S O A C ap ab ility 4 Driver 5 Jt Protection e 9 10 Preliminary data Isolatori Symbol Test Conditions

10N03

Abstract: 06N03 VU050-12N03 04n03 14n03 VU050-16N03 VU050-08N03 IT5 rectifier 16N03 12n03
Contextual Info: MbE D • 4 h ñ b 25 b 0 0 G 1 25 5 3 H I X Y I X Y S CORP 'T-Z.SiQ^ g m -< n TYYS k_J Data Sheet No. 911004A - November 1991 Three-Phase Diode Rectifier Bridge VU050 FEATURES:_ • Isolated Direct Copper Bond Base Plate

MCC72-12I01

Abstract: v06v 06io1 diode c72
Contextual Info: 4bE D • 4bôb22b 000116Ö 3 H I X Y I X Y S CORP BIXYS "T “25-Z3 Version 1 400 600 800 1200 1400 1600 MCC72-06ÌO1 MCC72-08ÎO1 MCC72-12Ì01 MCC72-14Ì01 MCC72-16Ì01 Test conditions ImMâi Ifmhs Tvj=T vjm Tc=85°C; 180°sin Itsmi Ifsm (di/dtJc Version 8

Contextual Info: □IXYS IGBT Modules Half-Bridge and Chopper Configurations VII High Short Circuit SOA Capability VII 50-12S3 VID50-12S3 VDI50-12S3 •4 4 ! f 1 * : I Maximum Ratings Symbol Test Conditions V CES T0 = 25°C to 150°C 1200 V V CGR T,J = 25°C to 150°C; RrP

Contextual Info: Standard Power MOSFET IRFP264 VDSS = 250 V ID cont = 38 A p DS(on) = 0.075 Q N-Channel Enhancement Mode Symbol Test Conditions v DSS Tj = 25°Cto150°C 250 V VDGR T.J = 25°C to 150°C; Rrt! = 1 M£2 Go 250 V Maximum Ratings vy g s Continuous * ±20 V ^G SM

ma 8630

Abstract: MCC56-14i01 MCC56-14i01 B MCC56-16IO1 MCC56-06IO1 MCD56-04IO8 MCC56-08IO8 B
Contextual Info: 4bE D • 4bflb22fc. 00011fl4 b B I X Y 'T Z S - i y I X Y S CORP n ix Y S Thyristor Modules Thyristor/Diode Modules Vrm VotM V VM V ra V 500 700 900 1300 1500 1700 400 600 800 1200 1400 1600 Type Version 1 Version 8 Version 6 MCC56-06IO1 MCC56-08IO1 MCC56-12I01

VAJI

Abstract: TI42A
Contextual Info: 4bûb22b Ü001Ö03 T21 IX Y lOIXYS IGBT with Diode IXSN30N100AU1 CES High Short Circuit SOA Capability CE sat = 34 A = 1000 V =4V 2 & 4 "T i Symbol Test Conditions V«s T j = 25°C to 150°C 1000 V T j = 25°C to 150°C; RGE = 1 M£2 1000 V Maximum Ratings

Contextual Info: □IXYS IGBT Module Half-Bridge Configuration VII100-12G4 ^C DC = 100 A V CES = 1200 V V CE (sat) = 2.6 V High Short Circuit SOA Capability Symbol Test C onditions V CES Tj = 25°C to 150°C v CGR Tj = 25°C to 150°C; RGE = 1 MQ V GES v GEM Continuous Transient

DIN 46249 TERMINALS

Abstract: ixgn50n100 1XGQ150N6QY3 IXGQ50N100Y4
Contextual Info: I X Y S CORP IS E D 4ti8b25fcj O O O O S S O T ]\/[OSBLOC MODULES The MOSBLOC family of isolated modules are designed for high power industrial and commercial applica­ tions requiring improved ruggedness and efficiency. They are available with either IXYS* advanced MOSIGBTs

24N50S

Abstract: smd JH IXFH24N50S D2528
Contextual Info: HiPerFET Power MOSFET IXFH24N50S VDSS D25 RDS on Surface Mountable N-Channel Enhancement-Mode Avalanche Rated, High dv/dt, Low trr t rr =s500 V = 24 A = 0.23 Cl < 250 ns Preliminary data Symbol Maximum Ratings . te s t Conditions v DSS Tj = 25 Cto l7 5 bC

Contextual Info: • MbflbS2b GGGlbbS 307 M I X Y niXYS MCC56 ITav=2 x 60 A MCD56 VRRM=400-1800 v Thyristor Modules Thyristor/Diode Modules 500 700 900 1300 1500 1700 1900 i 1 > > > Vw V mm V 400 600 800 1200 1400 1600 1800* Type Version 1 B MCC56-06ÌO1 MCC56-08ÌO1 MCC56-12io1

Contextual Info: 4bflb55b 00Glb73 Mfl3 H I X Y n ix Y S Thyristor Modules Thyristor/Diode Modules V mn V mm V Vmm Vow V 500 700 900 1300 1500 1700 1900 400 600 800 1200 1400 1600 1800* MCC95 MCD95 iTAV= 2 x 116 A VRRM= 400-1800 v Type Version 1 B MCC95-06ÌO1 MCC95~08io1 MCC95-12I01

Contextual Info: DIXYS MDD 172 IFRMS = 2 x 300 A High Power Diode Modules FAVM = 2x190 A v RRM = 800 -1800 V v RSM V RRM V V 3 Type 1 î J J i 1 900 1300 1500 1700 1900 Symbol ^FAVM ^FSM MDD MDD MDD MDD MDD 800 1200 1400 1600 1800 Maximum Ratings Test Conditions 300 190 A

Contextual Info: Li IXYS Half Controlled VHF36 Single Phase Rectifier Bridges with freewheeling Diode Type DSti V 8 1 3 2 op o p V 800 1200 1400 1600 Test Conditions •dAV» ^FRHS> ^TRM S Tk = 85‘ C, module module per leg ^FSU> ^TSH Tvj dl/dt „ (dv/dt)w 45-C; > GC

IXGH20N60U1

Abstract: IXGH17N100AU1 SOT227B package IXSH20N60U1 *GH20N60AU1 1XYS UltraFast 5-40 kHz E1S4 TI231 IGBT 20A 600V ABB
Contextual Info: Mb E D • MböbEEb 0000^20 7 H I X Y 'PS !-! S I X Y S CORP □IXYS PRELIMINARY TECHNICAL INFORMATION* Data Book NO.91750A October 1991 "U1" Series IGBTs IGBTs with Interna! Fast Recovery Rectifier Features High Voltage IGBT and Anti-Parallel in One Package

IXSE502PC

Abstract: Hearing Aid ARM processor based Circuit Diagram IXSE502 DOWN COUNTER using 8051 flow chart for automatic control of three phase motor using 8051 ic circuit diagram of digital hearing aid incremental shaft encoder 8086 microcomputer quadrature shaft decoder D-6840
Contextual Info: 4bE D • MböbEEb □□Gill? E BIIXY I X Y S CORP T ‘5 * ^ 3 ' O S □IXYS PRELIMINARY INFORMATION D atasheet No. 915502A October 1991 SHAFT ENCODER PERIPHERAL INTERFACE IXSE502 / IXSE503 Features Direct 2 channel Quadrature Inputs with Schmitt Trigger Circuitry

Contextual Info: □IXYS VUE 50 Three Phase Rectifier Bridge dAV with Fast Recovery Epitaxial Diodes FRED rr 4/5 6 8 10 VRRM V Type 1200 1200 VUE 50-12N01 Test Conditions Kav Tk = 85°C, module Jpdt L-W- l-w- 200 210 A A VR= 0 t = 1 0 m s (50 Hz), sine t = 8.3 ms (60 Hz), sine

Contextual Info: 4bfibE2b OOO lbbl 7bl *IXY QIXYS MCC44 lTAV=2 x 49 A MCD44 vRRM= 400-1800 V Thyristor Modules Thyristor/Diode Modules > > > 500 700 900 1300 1500 1700 1900 400 600 800 1200 1400 1800 1800* Ii V r*m Vo«, V Type Version 1 B MCC44-06ÌO1 MCC44-08ÌO1 MCC44-12io1

Contextual Info: 4bfifc.22b 0001Ô43 SQÖ IIX Y □IXYS ^C65 VCES IGBT Modules VII75-12S1 VCE sat = 75 A = 1200 V = 3.7 V — Î1 — U High Short Circuit SOA Capability r a W l L“ =1-— 8 o o 9 1=J1A Symbol Test Conditions VCES Tj = 25‘C to 150’C 1200 V Vco« Tj - 25'C to 150'C; RG6 = 1 Mi)

40n60 transistor

Abstract: 30N60 40n60 30N60A 40n60 igbt 17N10 wiom DC transistor JE 1090 20N60A igbt equivalent to 40n60
Contextual Info: MbE D • Mb S b S E b OO O O S T M T «IXY I X V S CORP T □IX Y S I V I S Data Book NO.91560A October 1991 "S" Series MOSIGBTs High Short Circuit SOA Insulated Gate Bipolar Transistor Features • • • Guaranteed Short Circuit Capability SCSOA Optimized for 60Hz to 30kHz Switching