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    14N03 Search Results

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    14N03 Price and Stock

    ROHM Semiconductor RSF014N03TL

    MOSFET N-CH 30V 1.4A TUMT3
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    DigiKey RSF014N03TL Cut Tape 3,434 1
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    RSF014N03TL Digi-Reel 3,434 1
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    Mouser Electronics RSF014N03TL 2,504
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    Ameya Holding Limited RSF014N03TL 70 1
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    Avnet Silica RSF014N03TL 19 Weeks 3,000
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    Chip One Stop RSF014N03TL Cut Tape 3,732 0 Weeks, 1 Days 5
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    CoreStaff Co Ltd RSF014N03TL 3,000
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    KORATECH 014N0300B07440808N

    14N 300MM 1.0P 4/4/8/8) P7
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    DigiKey 014N0300B07440808N Bulk 2,228 5
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    Rochester Electronics LLC NVD14N03RT4G

    N-CHANNEL POWER MOSFET
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    DigiKey NVD14N03RT4G Bulk 1,886 1,886
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    onsemi NTD14N03RT4G

    MOSFET N-CH 25V 2.5A DPAK
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    DigiKey NTD14N03RT4G Digi-Reel 1,876 1
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    Mouser Electronics NTD14N03RT4G 5,623
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    Bristol Electronics NTD14N03RT4G 3,539
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    Rochester Electronics NTD14N03RT4G 91,781 1
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    TME NTD14N03RT4G 1
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    ComSIT USA NTD14N03RT4G 1
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    Richardson RFPD NTD14N03RT4G 2,500
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    Avnet Asia NTD14N03RT4G 16 Weeks 2,500
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    Avnet Silica NTD14N03RT4G 17 Weeks 2,500
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    Vyrian NTD14N03RT4G 21,632
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    KORATECH 014N0350B07440808N

    14N 350MM 1.0P 4/4/8/8) P7
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    DigiKey 014N0350B07440808N Bulk 1,253 5
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    14N03 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    F219

    Abstract: vu050 DIXYS
    Text: DIXYS VUG 50 idAV = 58 A v rrm = 800-1800 V Three Phase Rectifier Bridge v RSM V r„ m V V TVPe -O AS 3 b 3 Li L + - o— 800 1200 1400 1600 1800 900 1300 1500 1700 1900 VUO 50-08N03 VUO 50-12N03 VUO 50-14N03 VUO 50-16N03 VUO 50-18N03* . * delivery time on request


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    50-08N03 50-12N03 50-14N03 50-16N03 50-18N03* F2-19 F2-20 F219 vu050 DIXYS PDF

    Untitled

    Abstract: No abstract text available
    Text: □IXYS Three Phase Rectifier Bridges V ' rsm V RAM V V 900 1300 1500 1700 1900 800 1200 1400 1600 1800 VUO 50 IdAV = 58 A VRRM = 800-1 8 0 0 V i- Type Pt 1 VUO 50-08N03 VUO 50-12N03 VUO 50-14N03 VUO 50-16N03 VUO 50-18N03* L-W - * delivery time on request


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    50-08N03 50-12N03 50-14N03 50-16N03 50-18N03* PDF

    50-08N

    Abstract: 50-12N03 50-08N03 50-16N 50-18N03 50-18N vuo 50-08N03
    Text: 4bñb22b DODICI OQl « I X Y □IXYS VUO 50 IdAV = 58 A VRRM = 800-1800 V Three Phase Rectifier Bridges V RSM VRRM V V 900 1300 1500 1700 1900 800 1200 1400 1600 1800 Type fet F ti "it VUO 50-08N03 VUO 50-12N03 VUO 50-14N03 VUO 50-16N03 VUO 50-18N03* I—► —


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    50-08N03 50-12N03 50-14N03 50-16N03 50-18N03* 50-08N 50-16N 50-18N03 50-18N vuo 50-08N03 PDF

    Untitled

    Abstract: No abstract text available
    Text: VUO 60 Vpp. = 1200 -1800 v RRM Three Phase Rectifier Bridge v RSM VRRM V V 1300 1500 1700 1900 1200 1400 1600 1800 dAV = 72 A Type '“ l i t VUO 60-12N03 VUO 60-14N03 VUO 60-16N03 VUO 60-18N03* L-ii— ' delivery time on request Symbol Test Conditions 'd A V


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    60-12N03 60-14N03 60-16N03 60-18N03* 00G355 PDF

    30-16N03

    Abstract: 30-18N03 30-08N03 3037a vuo 30
    Text: n ix Y S VUO 30 IdAV Three Phase Rectifier Bridge v RSM VRRM V V 900 1300 1500 1700 1900 800 1200 1400 1600 1800 V RRM -O Type 37 A 800-1800 V + VUO 30-08N03 VUO 30-12N03 VUO 30-14N03 VUO 30-16N03 VUO 30-18N03* * delivery time on request Symbol Test Conditions


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    30-08N03 30-12N03 30-14N03 30-16N03 30-18N03* F2-15 F2-16 30-18N03 3037a vuo 30 PDF

    60-14N03

    Abstract: VUO60 60-12N03 60-16N03 60-18N03
    Text: DIXYS VUO 60 Three Phase Rectifier Bridge idAv —72 A VRRM = 1200-1800 V + v RSM V RRM V V 1300 1500 1700 1900 1200 1400 1600 1800 Type VUO 60-12N03 VUO 60-14N03 VUO 60-16N03 VUO 60-18N03* * delivery time on request Symbol I IdAVM ® l2t Maximum Ratings


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    60-12N03 60-14N03 60-16N03 60-18N03* F2-27 VUO60 60-18N03 PDF

    60-12N03

    Abstract: 14N03 60-08N03 16N03 60-14N03 60-16N03 60-18N03 DIXYS 12n03 RSM 037
    Text: □IXYS Three Phase Rectifier Bridge v RSM VRRM V V 900 1300 1500 1700 1900 800 1200 1400 1600 1800 VUO 60 VRRM = 800 -1800 V IdAV ?' Type VUO 60-08N03 VUO 60-12N03 VUO 60-14N03 VUO 60-16N03 VUO 60-18N03* J • ' I = 58 A 1 L-ii— L-N—1 * delivery time on request


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    60-08N03 60-12N03 60-14N03 60-16N03 60-18N03* 60-12N03 14N03 60-08N03 16N03 60-14N03 60-16N03 60-18N03 DIXYS 12n03 RSM 037 PDF

    VUO60

    Abstract: 60-12N03 60-14N03 60-16N03 60-18N03
    Text: nixYS VUO 60 VRRM =1200-1800 V = 72 A I Three Phase Rectifier Bridge V RSM VRRM dAV Type I f ' V V 1300 1500 1700 1900 1200 1400 1600 1800 VUO VUO VUO VUO 60-12N03 60-14N03 60-16N03 60-18N03* 1 11 Î1 III 11 'S -W L+, I . f * delivery tim e on request Symbol


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    60-12N03 60-14N03 60-16N03 60-18N03* VUO60 60-18N03 PDF

    14N03LA

    Abstract: 14n03 14N03L GD 364 IPB14N03LA IPI14N03LA IPP14N03LA
    Text: 14N03LA 14N03LA, 14N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • N-channel V DS 25 V R DS on ,max (SMD version) 13.6 mΩ ID 30 A • Logic level • Excellent gate charge x R DS(on) product (FOM)


    Original
    IPB14N03LA IPI14N03LA, IPP14N03LA P-TO263-3-2 P-TO262-3-1 P-TO220-3-1 Q67042-S4156 14N03LA 14N03LA 14n03 14N03L GD 364 IPB14N03LA IPI14N03LA IPP14N03LA PDF

    t14-n03

    Abstract: 14n03 T14 N03 t14n03 369D NTD14N03R NTD14N03RG NTD14N03RT4 NTD14N03RT4G DSA0032463
    Text: 14N03R Power MOSFET 14 Amps, 25 Volts N−Channel DPAK http://onsemi.com Features • Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in


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    NTD14N03R NTD14N03R/D t14-n03 14n03 T14 N03 t14n03 369D NTD14N03R NTD14N03RG NTD14N03RT4 NTD14N03RT4G DSA0032463 PDF

    14N03

    Abstract: 14N03L
    Text: 14N03LA, 14N03LA OptiMOS 2 Power-Transistor Product Summary Features V DS • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications 25 R DS on),max 13.9 ID 30 V mΩ A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)


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    IPI14N03LA, IPP14N03LA PG-TO262-3-1 PG-TO220-3-1 IPI14N03LA PG-TO262-3-1 14N03LA 14N03LA 14N03 14N03L PDF

    Untitled

    Abstract: No abstract text available
    Text: 14N03R, 14N03R Power MOSFET 14 Amps, 25 Volts N−Channel DPAK http://onsemi.com Features • • • • • • • Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge


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    NTD14N03R, NVD14N03R NTD14N03R/D PDF

    14N03L

    Abstract: IPD14N03L P-TO252 14N03
    Text: 14N03L Preliminary data OptiMOS=Buck converter series Product Summary Feature  N-Channel  Logic Level  Low on-resistance RDS on  Excellent Gate Charge x RDS(on) product (FOM) 30 VDS RDS(on) ID V m 13.5 30 A P-TO252 Superior thermal resistance 175°C operating temperature


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    IPD14N03L P-TO252 Q67042-S4111 14N03L 14N03L IPD14N03L P-TO252 14N03 PDF

    14N03LA

    Abstract: 14N03L 14N03 PG-TO263-3-2 PG-TO-263-3-2 IPB14N03LA JESD22
    Text: 14N03LA G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max (SMD version) 13.6 mΩ ID 30 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)


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    IPB14N03LA PG-TO263-3-2 14N03LA 14N03LA 14N03L 14N03 PG-TO263-3-2 PG-TO-263-3-2 JESD22 PDF

    14N03L

    Abstract: IPD14N03LA ANPS071E IPD14N03L smd diode marking 59A 14N03
    Text: 14N03L OptiMOS Buck converter series Product Summary Feature • N-Channel VDS • Logic Level RDS on • Low On-Resistance RDS(on) ID 30 V 13.5 mΩ 30 • Excellent Gate Charge x RDS(on) product (FOM) A P- TO252 -3-11 • Superior thermal resistance


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    IPD14N03L Q67042-S4111 14N03L 14N03L IPD14N03LA ANPS071E IPD14N03L smd diode marking 59A 14N03 PDF

    14N03LA

    Abstract: 14N03L 14N03 IPB14N03LA G IPI14N03LA IPP14N03LA IPB14N03LA
    Text: 14N03LA 14N03LA, 14N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • N-channel V DS 25 V R DS on ,max (SMD version) 13.6 mΩ ID 30 A • Logic level • Excellent gate charge x R DS(on) product (FOM)


    Original
    IPB14N03LA IPI14N03LA, IPP14N03LA P-TO263-3-2 P-TO262-3-1 P-TO220-3-1 Q67042-S4156 14N03LA 14N03LA 14N03L 14N03 IPB14N03LA G IPI14N03LA IPP14N03LA IPB14N03LA PDF

    14N03LA

    Abstract: IPP14N03LA IPI14N03LA JESD22 14N03L 14N03
    Text: 14N03LA, 14N03LA OptiMOS 2 Power-Transistor Product Summary Features V DS • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications 25 R DS on),max 13.9 ID 30 V mΩ A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)


    Original
    IPI14N03LA, IPP14N03LA PG-TO262-3-1 PG-TO220-3-1 IPI14N03LA 14N03LA 14N03LA IPP14N03LA IPI14N03LA JESD22 14N03L 14N03 PDF

    14N03L

    Abstract: 14N03LA 14N03
    Text: 14N03LA 14N03LA, 14N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters 1 • Qualified according to JEDEC for target applications V DS 25 V R DS on),max (SMD version) 13.6 mΩ ID 30 A • N-channel - Logic level


    Original
    IPB14N03LA IPI14N03LA, IPP14N03LA P-TO263-3-2 P-TO262-3-1 P-TO220-3-1 IPI14N03LA P-TO263-3-2 14N03L 14N03LA 14N03 PDF

    14N03LA

    Abstract: 14N03
    Text: 14N03LA, 14N03LA OptiMOS 2 Power-Transistor Product Summary Features V DS • Ideal for high-frequency dc/dc converters R DS on ,max • Qualified according to JEDEC1) for target applications 25 13.9 ID 30 V m: A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)


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    IPI14N03LA, IPP14N03LA PG-TO262-3 PG-TO220-3 IPI14N03LA PG-TO262-3 14N03LA 14N03LA 14N03 PDF

    N03G

    Abstract: t14 N03G T14N03g 14N03 ON N03G t14-n03 Datasheets N03G 369D NTD14N03R NTD14N03R-001
    Text: 14N03R Power MOSFET 14 Amps, 25 Volts N-Channel DPAK http://onsemi.com Features •ăPlanar HD3e Process for Fast Switching Performance •ăLow RDS on to Minimize Conduction Loss •ăLow Ciss to Minimize Driver Loss •ăLow Gate Charge •ăOptimized for High Side Switching Requirements in


    Original
    NTD14N03R NTD14N03R/D N03G t14 N03G T14N03g 14N03 ON N03G t14-n03 Datasheets N03G 369D NTD14N03R NTD14N03R-001 PDF

    t14n03

    Abstract: 14n03 T14 N03 t14-n03 NTD14N03RT4 369D NTD14N03R
    Text: 14N03R Power MOSFET 14 Amps, 25 Volts N−Channel DPAK Features • • • • • http://onsemi.com Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in


    Original
    NTD14N03R NTD14N03R/D t14n03 14n03 T14 N03 t14-n03 NTD14N03RT4 369D NTD14N03R PDF

    t14n03

    Abstract: t14-n03 T14 N03 14n03 351 MARKING D-PAK 351 D-PAK MARKING CODE 351 D-PAK
    Text: 14N03R Power MOSFET 14 Amps, 25 Volts N−Channel DPAK Features • • • • • http://onsemi.com Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in


    Original
    NTD14N03R t14n03 t14-n03 T14 N03 14n03 351 MARKING D-PAK 351 D-PAK MARKING CODE 351 D-PAK PDF

    T14N03g

    Abstract: n03g T14 N03g ON N03G 14n03 NVD14N03RT4G NVD14 NVD14N03R 369D
    Text: 14N03R, 14N03R Power MOSFET 14 Amps, 25 Volts N−Channel DPAK http://onsemi.com Features • • • • • • • Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge


    Original
    NTD14N03R, NVD14N03R AEC-Q101 NTD14N03R/D T14N03g n03g T14 N03g ON N03G 14n03 NVD14N03RT4G NVD14 369D PDF

    14n03

    Abstract: VU0110-16N07 vuo 82-12N07 vu0110 08N03 12N03 VU016- 16N03 190-16N07 16N07
    Text: 3~ Rectifier Bridges, B6U Type ^IhJC PSM ► New A -C 45°C 10 ms A 50 130 4.5 46 0.75 120° sine 100 0.8 40 130 3.1 0.516 (120° sine) 300 0.8 15 130 2.5 0.42 (120° sine) 250 400 440 500 575 800 1400 1600 1800 250 400 440 500 575 800 1200 1400 1600 1800


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    VU016-08N01 16-12N01 16-14N01 16-16N01 16-18N01 08N01 12N01 14N01 16N01 18N01 14n03 VU0110-16N07 vuo 82-12N07 vu0110 08N03 12N03 VU016- 16N03 190-16N07 16N07 PDF