IRF530 Search Results
IRF530 Price and Stock
Infineon Technologies AG IRF530NSTRLPBFMOSFET N-CH 100V 17A D2PAK |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IRF530NSTRLPBF | Cut Tape | 4,481 | 1 |
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IRF530NSTRLPBF | Reel | 800 | 10 Weeks | 1,600 |
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IRF530NSTRLPBF | 13,132 |
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IRF530NSTRLPBF | 13,600 | 10 Weeks | 800 |
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IRF530NSTRLPBF | Cut Tape | 10 | 1 |
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IRF530NSTRLPBF | Bulk | 20 |
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IRF530NSTRLPBF | 810 | 1 |
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IRF530NSTRLPBF | Cut Tape | 9,246 | 0 Weeks, 1 Days | 1 |
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IRF530NSTRLPBF | 67,200 | 11 Weeks | 800 |
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IRF530NSTRLPBF | 53,600 | 1 |
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IRF530NSTRLPBF | 20,560 |
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Vishay Siliconix IRF530PBFMOSFET N-CH 100V 14A TO220AB |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IRF530PBF | Tube | 2,951 | 1 |
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IRF530PBF | Bulk | 1,000 |
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IRF530PBF | 12,650 | 1 |
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Vishay Siliconix IRF530STRLPBFMOSFET N-CH 100V 14A D2PAK |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IRF530STRLPBF | Digi-Reel | 2,657 | 1 |
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Infineon Technologies AG IRF5305STRLPBFMOSFET P-CH 55V 31A D2PAK |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IRF5305STRLPBF | Digi-Reel | 863 | 1 |
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IRF5305STRLPBF | Reel | 1,600 | 8 Weeks | 800 |
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IRF5305STRLPBF |
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IRF5305STRLPBF | 64,000 | 8 Weeks | 800 |
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IRF5305STRLPBF | Reel | 1,600 |
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IRF5305STRLPBF | 645 | 1 |
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IRF5305STRLPBF | 3,682 |
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IRF5305STRLPBF | Cut Tape | 12,750 | 0 Weeks, 1 Days | 1 |
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IRF5305STRLPBF | 42,400 | 9 Weeks | 800 |
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IRF5305STRLPBF | 33,600 | 1 |
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IRF5305STRLPBF | 25,600 |
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Vishay Siliconix IRF530PBF-BE3MOSFET N-CH 100V 14A TO220AB |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IRF530PBF-BE3 | Tube | 592 | 1 |
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IRF530 Datasheets (152)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF530 |
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14A, 100V, 0.160 Ohm, N-Channel Power MOSFETs | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF530 | Harris Semiconductor | Power MOSFET Selection Guide | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF530 |
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N-Channel Enhancement-Mode Silicon Gate | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF530 |
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N-channel power MOSFET, 20 A, 100V. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF530 |
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N-Channel ENHANCEMENT MODE POWER MOS TRANSISTOR | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF530 |
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N-CHANNEL 100V - 0.115 ? - 14A TO-220 LOW GATE | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF530 |
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Power MOSFETs Cross Reference Guide | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF530 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 14A TO-220AB | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF530 |
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N-Channel Power MOSFETs, 20 A, 60-100 V | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF530 |
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POWER MOSFETs | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF530 | Frederick Components | Power MOSFET Selection Guide | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF530 |
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Power Transistor Data Book 1985 | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF530 |
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N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 14A. | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF530 | Harris Semiconductor | N-channel Power Mosfets Avalanche Energy Rated | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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IRF530 | Harris Semiconductor | Power MOSFET Data Book 1990 | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF530 | International Rectifier | HEXFET Power Mosfet | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF530 | International Rectifier | N-Channel Power MOSFETs | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF530 | International Rectifier | TO-220 N-Channel HEXFET Power MOSFET | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF530 |
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Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, 100V, 14A, Pkg Style TO-220AB | Scan | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF530 |
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European Master Selection Guide 1986 | Scan |
IRF530 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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IRF530S
Abstract: SiHF530S SiHF530S-E3 910-20-11
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IRF530S, SiHF530S O-263) 2002/95/EC 11-Mar-11 IRF530S SiHF530S-E3 910-20-11 | |
AN-994
Abstract: IRF530N IRF530NL IRF530NS IRF530S 4.5v to 100v input regulator
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91352B IRF530NS IRF530NL EIA-418. AN-994 IRF530N IRF530NL IRF530NS IRF530S 4.5v to 100v input regulator | |
Contextual Info: PD- 95982 IRF530SPbF Lead-Free Document Number: 91020 12/21/04 www.vishay.com 1 IRF530SPbF Document Number: 91020 www.vishay.com 2 IRF530SPbF Document Number: 91020 www.vishay.com 3 IRF530SPbF Document Number: 91020 www.vishay.com 4 IRF530SPbF Document Number: 91020 |
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IRF530SPbF 08-Mar-07 | |
Contextual Info: IRF530, SiHF530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) () VGS = 10 V 0.16 Qg (Max.) (nC) 26 Qgs (nC) 5.5 Qgd (nC) 11 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature |
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IRF530, SiHF530 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A | |
IRF530SPBF
Abstract: IRF530S SiHF530S SiHF530S-E3 IRF530STRLPBF IRF530STRL
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IRF530S, SiHF530S O-263) 18-Jul-08 IRF530SPBF IRF530S SiHF530S-E3 IRF530STRLPBF IRF530STRL | |
IRF5305Contextual Info: PD - 91385B IRF5305 HEXFET Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated D VDSS = -55V RDS on = 0.06Ω G ID = -31A S Description Fifth Generation HEXFETs from International Rectifier |
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91385B IRF5305 O-220 IRF5305 | |
IRF530N
Abstract: 4.5v to 100v input regulator
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IRF530N O-220 O-220AB IRF530N 4.5v to 100v input regulator | |
IRF530N
Abstract: AN7254 AN7260 AN9321 AN9322 TB334
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IRF530N O-220AB IRF530N AN7254 AN7260 AN9321 AN9322 TB334 | |
IRF530
Abstract: IRF532 irf531 IRF533 1RF533 t5d 58 reliability irf530 irf-530
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OCR Scan |
70S7f IRF530 IRF531 IRF532 IRF533 O-220 IRF533 1RF533 t5d 58 reliability irf530 irf-530 | |
IRF530N
Abstract: 4.5V TO 100V INPUT REGULATOR
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IRF530N O-220 IRF530N 4.5V TO 100V INPUT REGULATOR | |
2CS-42724
Abstract: RRF530 S33R IRF530R IRF531R IRF532R IRF533R TC. 12A MOSFET Drivers
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OCR Scan |
IRF530R, IRF531R, IRF532R, IRF533R 0V-100V IRF532R IRF533R 2CS-42724 2CS-42724 RRF530 S33R IRF530R IRF531R TC. 12A MOSFET Drivers | |
Contextual Info: PD-91352A In te rn a tio n a l I ö R Rectifier IRF530NS/L HEXFET Power MOSFET Advanced Process Technology Surface Mount IRF530NS Low-profile through-hole (IRF530NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated V dss = 1 0 0 V R d S (o r) = 0 .1 1 f ì |
OCR Scan |
IRF530NS) IRF530NL) PD-91352A IRF530NS/L | |
RF530
Abstract: 1RF530 irf532 IRF530 HEXFET TRANSISTORS irf531 IR IRF532 1RF531 TYN 058 IRF530 LIRF530
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OCR Scan |
T-39-11 IRF530 IRF531 IRF532 IRF533Î O-220AB IRF530, IRF531, IRF532, IRF533 RF530 1RF530 IRF530 HEXFET TRANSISTORS IR IRF532 1RF531 TYN 058 LIRF530 | |
Contextual Info: IRF530NS IRF530NL l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 90mΩ G ID = 17A S Description D2Pak IRF530NS The D2Pak is a surface mount power package capable of accommodating |
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IRF530NS IRF530NL IRF530NL) EIA-418. | |
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D84DL2
Abstract: IRF530 N-Channel fet
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OCR Scan |
IRF530 D84DL2 100ms TC-25Â IRF530/D84DL2 IRF531/D84DK2 N-Channel fet | |
DM 321
Abstract: IRF530 mosfet TA17411 RF1S540SM9A IRF530 data sheet in IRF530 datasheet N-Channel Switch intersil relay 6v 100 ohm tr irf530 IRF530
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IRF530 IRF530, RF1S530SM DM 321 IRF530 mosfet TA17411 RF1S540SM9A IRF530 data sheet in IRF530 datasheet N-Channel Switch intersil relay 6v 100 ohm tr irf530 | |
Contextual Info: I i .•_ I PRELIMINARY International I R Rectifier P D 9 .1 3 8 5 IRF5305 HEXFET Power MOSFET • • • • • • Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Vdss = -55 V |
OCR Scan |
IRF5305 6C413 554S2 D024242 | |
IRF530N
Abstract: IRF530N applications
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IRF530N O220AB) IRF530N IRF530N applications | |
irf530Contextual Info: N-CHANNEL POWER MOSFETS IRF530/531 FEATURES • Lower R ds On • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability |
OCR Scan |
IRF530/531 IRF530 IRF531 Q02fl755 irf530 | |
IRF530 vishay
Abstract: SiHF530 IRF530PBF tr irf530 IRF530 SiHF530-E3 IRF530P
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IRF530, SiHF530 O-220 O-220 18-Jul-08 IRF530 vishay IRF530PBF tr irf530 IRF530 SiHF530-E3 IRF530P | |
IRF530
Abstract: transistor irf530 IRF530FI IRF530 application O-220F transistor irf 130 O220F tr irf530
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IRF530 IRF530FI IRF530F 100oC 175oC O-220 O-220FI IRF530 transistor irf530 IRF530FI IRF530 application O-220F transistor irf 130 O220F tr irf530 | |
Contextual Info: ^Pioducti, Una. TELEPHONE: 973 376-2922 (212) 227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. FAX: (973) 376-8960 IRF530 14A, 100V, 0.160 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power |
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IRF530 300ns, 530nH, | |
IRF530Contextual Info: International HflSSMSE D Dl Mb Sb DbS i“r]Rectifier HEXFET Power M O S F E T INR PD-9.3070 IRF530 bSE INTERNATIONAL RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements |
OCR Scan |
IRF530 O-220 T0-220 IRF530 | |
IRF5305L
Abstract: IRF5305S
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91386C IRF5305S/L IRF5305S) IRF5305L) IRF5305L IRF5305S |