ISOPLUS220TM Search Results

DSEE8-08CC

Abstract: 10P40
Contextual Info: DSEE 8-08CC HiPerDynFREDTM Epitaxial Diode IFAV = 10 A VRRM = 800 V trr = 30 ns ISOPLUS220TM Electrically Isolated Back Surface VRRMc VRRM V V 800 400 Type ISOPLUS 220LVTM DSEE 8-08CC 1 2 3 G Preliminary Data Sheet Conditions Maximum Ratings A A IFSM TVJ = 45°C; tp = 10 ms 50 Hz , sine

ixys dsi

Abstract: 30-08AC 30-12AC ir 2411
Contextual Info: DSI 30 Rectifier Diode ISOPLUS220TM VRRM = 800 - 1200 V IF AV M = 30 A Electrically Isolated Back Surface VRSM VRRM V V 900 1300 800 1200 Type ISOPLUS 220TM DSI 30-08AC DSI 30-12AC A C Preliminary Data Sheet C A Symbol IFRMS IFAV IFSM I2t Conditions Maximum Ratings

26N50

Abstract: IXFC 26N50 IXFH26N50 24N50 ixfc26n50 .26n50 .24n50 IXFC24N50
Contextual Info: ADVANCE TECHNICAL INFORMATION VDSS HiPerFETTM MOSFETs ISOPLUS220TM Electrically Isolated Back Surface IXFC 26N50 IXFC 24N50 ID25 RDS on 500 V 23 A 500 V 21 A trr ≤ 250 ns 0.20 Ω 0.23 Ω N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family ISOPLUS 220LVTM

16-06A

Abstract: DSEA16-06AC 1606a
Contextual Info: DSEA16-06AC IFAV = 2x8 A VRRM = 600 V trr = 35 ns HiPerFREDTM Epitaxial Diode ISOPLUS220TM Electrically Isolated Back Surface Preliminary Data Sheet VRSM VRRM V V 600 600 Type DSEA16-06AC ISOPLUS220TM 1 2 1 3 2 3 Isolated back surface * * Patent pending Symbol

IXUC160N075

Contextual Info: ADVANCED TECHNICAL INFORMATION Trench Power MOSFET IXUC160N075 VDSS = 75 V ID25 = 160 A Ω RDS on = 6.5 mΩ ISOPLUS220TM Electrically Isolated Back Surface ISOPLUS 220TM Symbol Test Conditions Maximum Ratings G VDSS TJ = 25°C to 150°C 75 V VGS Continuous

DSEC29

Abstract: DSEC 29 DSEC
Contextual Info: HiPerFREDTM Epitaxial Diode DSEA 59-06BC DSEC 59-06BC = 2x30 A = 600 V = 35 ns IFAV VRRM trr ISOPLUS220TM Electrically Isolated Back Surface DSEA Preliminary Data Sheet VRSM VRRM V V 600 600 ISOPLUS220TM E153432 Type 1 DSEC 2 3 2 3 DSEA 59-06BC DSEC 59-06BC

CoolMOS Power Transistor

Abstract: POWER MOSFET 4600 UPS SIEMENS 25N80C
Contextual Info: Power MOSFET ISOPLUS220TM IXKC 25N80C Electrically Isolated Back Surface Low RDS on , High Voltage, CoolMOSTM Superjunction MOSFET VDSS = 800 V ID25 = 20 A Ω RDS(on) = 150 mΩ Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

80N085

Contextual Info: HiPerFETTM MOSFET IXFC 80N085 VDSS = 85 V ID25 = 80 A Ω RDS on = 11 mΩ ISOPLUS220TM Electrically Isolated Back Surface trr ≤ 200 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C

Contextual Info: DGSS 20-06CC VRRM = 600 V 2x300V IDC = 38 A CJunction = 16 pF Gallium Arsenide Schottky Rectifier Second generation ISOPLUS220TM Electrically Isolated Back Surface Preliminary Data Type Marking on product DGSS 20-06CC DGSS 20-06CC Circuit Package ISOPLUS220A

Contextual Info: IXKC 23N60C5 Advanced Technical Information ID25 = 23 A VDSS = 600 V RDS on max = 0.1 Ω CoolMOS Power MOSFET Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM

Contextual Info: DSEE 8-08CC HiPerDynFREDTM Epitaxial Diode IFAV = 10 A VRRM = 800 V trr = 30 ns ISOPLUS220TM Electrically Isolated Back Surface VRRMc VRRM V V 800 400 Type ISOPLUS 220LVTM DSEE 8-08CC 1 2 3 G Preliminary Data Sheet Conditions Maximum Ratings A A IFSM TVJ = 45°C; tp = 10 ms 50 Hz , sine

16N60B2D

Contextual Info: Advance Technical Information IXGC 16N60B2 HiPerFASTTM IGBT IXGC 16N60B2D1 B2-Class High Speed IGBT in ISOPLUS220TM Case VCES = 600 V = 28 A IC25 VCE sat = 2.3 V tfi(typ) = 80 ns Electrically Isolated Back Surface D1 Symbol Test Conditions Maximum Ratings

Contextual Info: ADVANCE TECHNICAL INFORMATION Trench Power MOSFET IXUC 60N10 VDSS = 100 V ID25 = 60 A Ω RDS on = 16.4 mΩ ISOPLUS220TM Electrically Isolated Back Surface Symbol Test Conditions ISOPLUS220TM Maximum Ratings VDSS TJ = 25°C to 150°C 100 V VGS Continuous

Contextual Info: ADVANCE TECHNICAL INFORMATION Trench Power MOSFET ISOPLUS220TM IXTP 180N055T IXTQ 180N055T VDSS = 55 V ID25 = 180 A Ω RDS on = 4.0 mΩ TO-220 (IXTP) Symbol Test Conditions G Maximum Ratings VDSS TJ = 25°C to 150°C 55 V VGS Continuous ±20 V ID25 TC = 25°C; Note 1

ixfh26n50q

Abstract: 26N50 IXFC 26N50
Contextual Info: ADVANCE TECHNICAL INFORMATION VDSS HiPerFETTM MOSFETs ISOPLUS220TM IXFC 26N50Q IXFC 24N50Q Electrically Isolated Back Surface ID25 RDS on 0.20 Ω 0.23 Ω 500 V 23 A 500 V 21 A trr ≤ 250 ns N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family

20n60c

Contextual Info: ADVANCE TECHNICAL INFORMATION CoolMOSTM Power MOSFET ISOPLUS220TM IXKC 20N60C Electrically Isolated Back Surface N-Channel Enhancement Mode Low RDS on , High Voltage MOSFET Symbol Test Conditions ISOPLUS 220LVTM Maximum Ratings VDSS TJ = 25°C to 150°C 600

Contextual Info: DSEE29-06CC ADVANCE TECHNICAL INFORMATION HiPerDynFREDTM Epitaxial Diode Electrically Isolated Back Surface IFAV = 30 A VRRM = 600 V trr = 30 ns VRRMc ISOPLUS220TM ISOPLUS220TM VRRM V V 600 300 Type DSEE29-06CC 1 2 3 G Symbol Conditions Maximum Ratings TC = 115°C; rectangular, d = 0.5

Contextual Info: DSEE29-12CC ADVANCE TECHNICAL INFORMATION HiPerDynFREDTM Epitaxial Diode IFAV = 30 A VRRM = 1200 VQ trr = 30 ns ISOPLUS220TM Electrically Isolated Back Surface VRRMQ VRRM V V 1200 600 Type ISOPLUS220TM DSEE29-12CC 1 2 1 3 2 3 Isolated back surface * Symbol

Contextual Info: DGSS 10-06CC Gallium Arsenide Schottky Diode IDC = 9 A VRRM = 600 V CJunction = 16 pF ISOPLUS220TM Electrically Isolated Back Surface Preliminary Data Sheet VRRMQ V VRRM Type ISOPLUS220TM V 600 300 1 DGSS 10-06CC 1 2 2 3 3 Isolated back surface * Symbol IDC

IXYS SEMICONDUCTOR

Contextual Info: DGSS 10-06CC VRRM = 2x300 V IDC = 18 A CJunction = 10.7 pF Gallium Arsenide Schottky Rectifier Second generation ISOPLUS220TM Electrically Isolated Back Surface Preliminary Data Type Circuit Package ISOPLUS220A DGSS 10-06CC 1 2 3 1 3 Features Conditions Maximum Ratings

Contextual Info: HiPerFETTM MOSFET IXFC 80N085 VDSS = 85 V ID25 = 80 A Ω RDS on = 11 mΩ ISOPLUS220TM Electrically Isolated Back Surface trr ≤ 200 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C

Contextual Info: IXKC 40N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 28 A RDS on) max = 95 m Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM D G G D S S E72873 Features

Contextual Info: Advance Technical Information PolarHVTM HiPerFET Power MOSFET ISOPLUS220TM IXFC 16N80P VDSS ID25 RDS on trr (Electrically Isolated Back Surface) = 800 V = 9 A Ω ≤ 650 mΩ ≤ 250 ns N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol

Contextual Info: DGSS 6-06CC VRRM = 600 V 2x300V IDC = 11 A CJunction = 4 pF Gallium Arsenide Schottky Rectifier Second generation ISOPLUS220TM Electrically Isolated Back Surface Preliminary Data Type Marking on product DGSS 6-06CC DGSS 6-06CC Circuit Package ISOPLUS220A