Untitled
Abstract: No abstract text available
Text: IXKC 23N60C5 Advanced Technical Information ID25 = 23 A VDSS = 600 V RDS on max = 0.1 Ω CoolMOS Power MOSFET Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM
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23N60C5
ISOPLUS220TM
E72873
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Untitled
Abstract: No abstract text available
Text: IXKC 23N60C5 CoolMOS 1 Power MOSFET ID25 = 23 A VDSS = 600 V RDS on) max = 0.1 Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM D G G D S S Preliminary data
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23N60C5
ISOPLUS220TM
E72873
20100303c
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23N60
Abstract: 23n60c5 E72873 IXKC23N60C5 18A60
Text: IXKC 23N60C5 Advanced Technical Information CoolMOS 1 Po wer MOSFET ID25 = 23 A VDSS = 600 V RDS on) max = 0.1 Ω Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge
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23N60C5
ISOPLUS220TM
E72873
IXKC23N60C5
20080523a
23N60
23n60c5
E72873
IXKC23N60C5
18A60
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23N60
Abstract: E72873 A6014
Text: IXKC 23N60C5 CoolMOS 1 Power MOSFET ID25 = 23 A VDSS = 600 V RDS on) max = 0.1 Ω Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM D G G D S S Preliminary data
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Original
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23N60C5
ISOPLUS220TM
E72873
20100303c
23N60
E72873
A6014
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PDF
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Untitled
Abstract: No abstract text available
Text: IXKC 23N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 23 A VDSS = 600 V RDS on max = 0.1 Ω Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM
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Original
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23N60C5
ISOPLUS220TM
E72873
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PDF
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Untitled
Abstract: No abstract text available
Text: IXKC 23N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 23 A VDSS = 600 V RDS on max = 0.1 Ω Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM
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23N60C5
ISOPLUS220TM
E72873
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PDF
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7N60B equivalent
Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches
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MS-013
10-Pin
5M-1994
MO-229
7N60B equivalent
18N50 equivalent
ixgh 1499
MOSFET smd 4407
IXDD 614
C 547 B W57 BJT transistor
r1275ns20l
R1271ns12C
IXYS CS 20-22 MOF1
IXTP 220N04T2
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