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    16N60B2 Search Results

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    16N60B2 Price and Stock

    IXYS Corporation IXGP16N60B2

    IGBT PT 600V 40A TO-220-3
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    IXYS Corporation IXGA16N60B2

    IGBT PT 600V 40A TO-263AA
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    IXYS Corporation IXGP16N60B2D1

    IGBT PT 600V 40A TO-220-3
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    IXYS Corporation IXGH16N60B2D1

    IGBT PT 600V 40A TO-247AD
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    IXYS Corporation IXGH16N60B2

    IGBT Transistors 600V 16A
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    Mouser Electronics IXGH16N60B2
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    16N60B2 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    16N60B2D

    Abstract: No abstract text available
    Text: Advance Technical Information IXGC 16N60B2 HiPerFASTTM IGBT IXGC 16N60B2D1 B2-Class High Speed IGBT in ISOPLUS220TM Case VCES = 600 V = 28 A IC25 VCE sat = 2.3 V tfi(typ) = 80 ns Electrically Isolated Back Surface D1 Symbol Test Conditions Maximum Ratings


    Original     		16N60B2 16N60B2D1 ISOPLUS220TM IC110 ID110 IXGC16N60C2D1 220TM E153432 405B2 16N60B2D PDF

    16N60

    Abstract: IXGC16N60B2D1
    Text: IXGC 16N60B2 HiPerFASTTM IGBT IXGC 16N60B2D1 B2-Class High Speed IGBT in ISOPLUS220TM Case VCES = 600 V = 28 A IC25 VCE sat = 2.3 V tfi(typ) = 80 ns Electrically Isolated Back Surface Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C


    Original     		16N60B2 16N60B2D1 ISOPLUS220TM IC110 ID110 IXGC16N60B2D1 220TMA/ 405B2 16N60 PDF

    igbt induction cooker

    Abstract: IF110 16N60B2D1 16N60 IXGH 16N60B2D1 IXGH16N60B2D1
    Text: Advance Technical Information HiPerFASTTM IGBT B2-Class High Speed IGBT Symbol Test Conditions VCES = 600 V = 40 A IC25 VCE sat = 2.0 V tfi(typ) = 80 ns IXGH 16N60B2D1 Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		16N60B2D1 IC110 IF110 16N60B2D1 O-247 065B1 728B1 123B1 728B1 igbt induction cooker IF110 16N60 IXGH 16N60B2D1 IXGH16N60B2D1 PDF

    16N60

    Abstract: 16N60B2 16N60B2D IXGC16N60B2D1 E153432
    Text: IXGC 16N60B2 HiPerFASTTM IGBT IXGC 16N60B2D1 B2-Class High Speed IGBT in ISOPLUS220TM Case VCES = 600 V = 28 A IC25 VCE sat = 2.3 V tfi(typ) = 80 ns Electrically Isolated Back Surface Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C


    Original     		16N60B2 16N60B2D1 ISOPLUS220TM IC110 ID110 IXGC16N60B2D1 220TM0 405B2 16N60 16N60B2 16N60B2D E153432 PDF

    16N60

    Abstract: igbt induction cooker IXGH 16N60B2D1 16N60B2 IF110 16N60B
    Text: Advance Technical Information HiPerFASTTM IGBT B2-Class High Speed IGBT Symbol Test Conditions VCES = 600 V = 40 A IC25 VCE sat = 2.0 V tfi(typ) = 80 ns IXGH 16N60B2D1 Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		16N60B2D1 IC110 IF110 16N60B2D1 O-247 065B1 728B1 123B1 728B1 16N60 igbt induction cooker IXGH 16N60B2D1 16N60B2 IF110 16N60B PDF

    16N60B2D1

    Abstract: igbt induction cooker IXG IGBT
    Text: Advance Technical Information HiPerFASTTM IGBT B2-Class High Speed IGBT VCES = 600 V = 40 A IC25 VCE sat = 2.3 V tfi(typ) = 80 ns IXGA 16N60B2 IXGP 16N60B2 IXGA 16N60B2D1 IXGP 16N60B2D1 D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600


    Original     		16N60B2 16N60B2D1 IC110 ID110 16N60B2D1 728B1 123B1 728B1 igbt induction cooker IXG IGBT PDF

    7N60B equivalent

    Abstract: 60N60B2-7Y 7N60C-2X 7N60B-2X 10n60b ixgd 28N12 60N60C2-7Y 20N120 16N60C2
    Text: Chip-Shortform2004.pmd Insulated Gate Bipolar Transistors G-Series Type VCES VCE sat @ IC Chip type Chip size dimensions 6 TJM = 150°C V V A mm mils Source bond wire Equivalent device recommended data sheet 26.10.2004, 12:44 High Gain High Gain High Gain


    Original     		7N60B-2X 7N60C-2X 16N60B2-3X 16N60C2-3X 30N60B2-4X 30N60C2-4X 40N60B2-5Y 40N60C2-5Y 60N60B2-7Y 60N60C2-7Y 7N60B equivalent 10n60b ixgd 28N12 20N120 16N60C2 PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 PDF