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    40N60C Search Results

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    40N60C Price and Stock

    Littelfuse Inc IXKR40N60C

    MOSFET N-CH 600V 38A ISOPLUS247
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    DigiKey IXKR40N60C Tube 14 1
    • 1 $23.78
    • 10 $23.78
    • 100 $16.294
    • 1000 $16.294
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    IXYS Corporation IXKN40N60C

    MOSFET N-CH 600V 40A SOT-227B
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    DigiKey IXKN40N60C Tube 9 1
    • 1 $37.45
    • 10 $27.838
    • 100 $37.45
    • 1000 $37.45
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    Mouser Electronics IXKN40N60C 12
    • 1 $37.45
    • 10 $27.83
    • 100 $27.83
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    TME IXKN40N60C 1
    • 1 $42.55
    • 10 $33.83
    • 100 $33.83
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    New Advantage Corporation IXKN40N60C 200 1
    • 1 -
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    • 100 $56.06
    • 1000 $52.32
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    IXYS Corporation IXGH40N60C

    IGBT 600V 75A 250W TO247AD
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    IXYS Corporation IXKC40N60C

    MOSFET N-CH 600V 28A ISOPLUS220
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    DigiKey IXKC40N60C Tube 50
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    • 100 $7.399
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    TME IXKC40N60C 1
    • 1 $9.82
    • 10 $7.02
    • 100 $7.02
    • 1000 $7.02
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    New Advantage Corporation IXKC40N60C 1,486 1
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    • 100 $25.72
    • 1000 $25.72
    • 10000 $24.01
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    IXYS Corporation IXGR40N60C

    IGBT 600V 75A 200W ISOPLUS247
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    Find more 40N60C price and stock on Findchips.com

    40N60C Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TO247AD

    Abstract: TO247AD package 40n60c CoolMOS Power Transistor ISOPLUS247
    Text: IXKR 40N60C CoolMOS Power MOSFET in ISOPLUS247TM Package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base VDSS ID25 RDS on 600 V 38 A Ω 70 mΩ D G Preliminary data S ISOPLUS 247TM E153432 MOSFET Conditions


    Original     		PDF 40N60C ISOPLUS247TM 247TM E153432 TO247AD TO247AD package 40n60c CoolMOS Power Transistor ISOPLUS247

    IXGR40N60

    Abstract: 40n60 40N60c 40N60CD1 IXGR40N60CD1
    Text: HiPerFASTTM IGBT ISOPLUS247TM VCES IXGR 40N60C IXGR 40N60CD1 IC25 VCE sat (Electrically Isolated Backside) tfi(typ) = 600 V = 75 A = 2.5 V = 75 ns Preliminary Data Sheet (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		PDF ISOPLUS247TM 40N60C 40N60CD1 IC110 E153432 728B1 IXGR40N60 40n60 40N60c IXGR40N60CD1

    Untitled

    Abstract: No abstract text available
    Text: IXKC 40N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 28 A RDS on) max = 95 m Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM D G G D S S E72873 Features


    Original     		PDF 40N60C ISOPLUS220TM E72873 20080523a

    40n60c

    Abstract: mosfet 4800 E72873
    Text: IXKC 40N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 28 A RDS on) max = 95 mΩ Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM D G G D S S E72873


    Original     		PDF 40N60C ISOPLUS220TM E72873 20080523a 40n60c mosfet 4800 E72873

    IXGR40N60C2D1

    Abstract: 40n60c2 ixgr 40n60c2d1 40n60c2d1 40n60c ixgr40n60c2 40n60 074K
    Text: HiPerFASTTM IGBT ISOPLUS247TM IXGR 40N60C2 IXGR 40N60C2D1 = = VCE SAT = tfi(typ = VCES IC25 C2-Class High Speed IGBTs (Electrically Isolated Back Surface) Preliminary Data Sheet IXGR_C2 IXGR_C2D1 ISOPLUS 247TM (IXGR) Symbol Test Conditions VCES TJ = 25°C to 150°C


    Original     		PDF ISOPLUS247TM 40N60C2 40N60C2D1 247TM IC110 ID110 40N60C2D1) IXGR40N60C2D1 40n60c2 ixgr 40n60c2d1 40n60c2d1 40n60c ixgr40n60c2 40n60 074K

    40n60c2

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT C2-Class High Speed IGBTs VCES IC25 VCE sat tfi typ IXGH 40N60C2 IXGT 40N60C2 = 600 V = 75 A = 2.7 V = 32 ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V


    Original     		PDF 40N60C2 O-268 IC110 O-247 40n60c2

    Untitled

    Abstract: No abstract text available
    Text: IXSR 40N60CD1 IGBT with Diode ISOPLUS247TM VCES IC25 = 600 = 62 = 2.5 = 70 VCE SAT tfi(typ) (Electrically Isolated Backside) Short Circuit SOA Capability V A V ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR


    Original     		PDF ISOPLUS247TM 40N60CD1

    Untitled

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT C2-Class High Speed IGBTs IXGH 40N60C2 IXGT 40N60C2 VCES IC25 VCE sat tfi typ = 600 V = 75 A = 2.7 V = 32 ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V


    Original     		PDF 40N60C2 O-268 IC110 O-247

    40N60C

    Abstract: No abstract text available
    Text: ADVANCE TECHNICAL INFORMATION CoolMOS Power MOSFET ISOPLUS220TM IXKC 40N60C Electrically Isolated Back Surface N-Channel Enhancement Mode Low RDS on , High Voltage, MOSFET Symbol Test Conditions Maximum Ratings VDSS = 600 V ID25 = 28 A Ω RDS(on) = 96 mΩ


    Original     		PDF ISOPLUS220TM 40N60C 728B1 065B1 123B1 40N60C

    40n60c2d1

    Abstract: *40n60c2d1 IXGH40N60C2D1 transistor kf 508 40N60 diode fr 307 40N60C2D
    Text: Advance Technical Data HiPerFASTTM IGBT with Diode VCES IC25 IXGH 40N60C2D1 IXGT 40N60C2D1 IXGJ 40N60C2D1 = 600 V = 75 A = 2.5 V = 32 ns VCE SAT tfi(typ) C2-Class High Speed IGBTs TO-247 AD (IXGH) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C


    Original     		PDF 40N60C2D1 O-247 IC110 40n60c2d1 *40n60c2d1 IXGH40N60C2D1 transistor kf 508 40N60 diode fr 307 40N60C2D

    Untitled

    Abstract: No abstract text available
    Text: CoolMOSTM Power MOSFET IXKC 40N60C in ISOPLUS220TM Package Electrically Isolated Back Surface Low RDS on , High Voltage, CoolMOSTM Superjunction MOSFET VDSS = 600 V ID25 = 24 A Ω RDS(on) = 96 mΩ Preliminary Data Sheet Symbol Test Conditions Maximum Ratings


    Original     		PDF 40N60C ISOPLUS220TM E153432 405B2

    IXGR40N60C2D1

    Abstract: 40N60C2 40N60c2d1 ixgr 40N60c2d1
    Text: Advance Technical Data IXGR 40N60C2 IXGR 40N60C2D1 HiPerFASTTM IGBT ISOPLUS247TM VCES IC25 = 600 V = 60 A = 2.7 V = 32 ns VCE SAT tfi(typ) Lightspeed 2TM Series (Electrically Isolated Back Surface) PLUS 247TM (IXFX) IXGR_C2 IXGR_C2D1 Symbol Test Conditions


    Original     		PDF 40N60C2 40N60C2D1 ISOPLUS247TM 247TM 728B1 123B1 728B1 065B1 IXGR40N60C2D1 40N60C2 40N60c2d1 ixgr 40N60c2d1

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information CoolMOS Power MOSFET IXKN 40N60C VDSS ID25 RDS on 600 V 40 A Ω 70 mΩ N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Symbol Conditions VDSS TJ = 25°C to 150°C Maximum Ratings VGS 600 V ±20 V miniBLOC, SOT-227 B


    Original     		PDF 40N60C OT-227 E72873

    fast diode SOT-227

    Abstract: 40N60C E72873 MOSFET 031
    Text: Advanced Technical Information CoolMOS Power MOSFET IXKN 40N60C VDSS ID25 RDS on 600 V 40 A 70 mW N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Symbol Conditions VDSS TJ = 25°C to 150°C Maximum Ratings VGS 600 V ±20 V miniBLOC, SOT-227 B E72873


    Original     		PDF 40N60C OT-227 E72873 Mounti193 fast diode SOT-227 40N60C E72873 MOSFET 031

    40N60C

    Abstract: CoolMOS E72873 Ixkn 40n60 E72873 SOT-227
    Text: IXKN 40N60C CoolMOS Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET VDSS ID25 RDS on 600 V 40 A Ω 70 mΩ D G S S miniBLOC, SOT-227 B E72873 MOSFET Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS ID25 ID90 TC = 25°C


    Original     		PDF 40N60C OT-227 E72873 40N60C CoolMOS E72873 Ixkn 40n60 E72873 SOT-227

    40N60CD1

    Abstract: PLUS247 IXSR40N60CD1 RG70 40N60C
    Text: IXSR 40N60CD1 IGBT with Diode ISOPLUS247TM VCES IC25 = 600 = 62 = 2.5 = 70 VCE SAT tfi(typ) (Electrically Isolated Backside) Short Circuit SOA Capability V A V ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR


    Original     		PDF 40N60CD1 ISOPLUS247TM 40N60CD1 PLUS247 IXSR40N60CD1 RG70 40N60C

    Untitled

    Abstract: No abstract text available
    Text: IXKC 40N60C COOLMOS * Power MOSFET VDSS = 600 V ID25 = 28 A RDS on max = 95 mΩ Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM D G G D S S E72873 Features


    Original     		PDF 40N60C ISOPLUS220TM E72873

    40N60C

    Abstract: No abstract text available
    Text: Advanced Technical Information CoolMOS Power MOSFET IXKN 40N60C VDSS ID25 RDS on 600 V 40 A 70 mW N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Symbol Conditions VDSS TJ = 25°C to 150°C Maximum Ratings VGS 600 V ±20 V miniBLOC, SOT-227 B E72873


    Original     		PDF 40N60C OT-227 E72873 40N60C

    Untitled

    Abstract: No abstract text available
    Text: IXKR 40N60C COOLMOS * Power MOSFET in ISOPLUS247TM Package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base D VDSS ID25 RDS on 600 V 38 A 70 mΩ Ω ISOPLUS 247TM E153432 G G D Preliminary data S S G = Gate Conditions


    Original     		PDF 40N60C ISOPLUS247TM 247TM E153432 ISOPLUS247 O-247

    Untitled

    Abstract: No abstract text available
    Text: IXKN 40N60C COOLMOS * Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET VDSS ID25 RDS on 600 V 40 A Ω 70 mΩ D G S S miniBLOC, SOT-227 B E72873 MOSFET Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS ID25 ID90 TC = 25°C


    Original     		PDF 40N60C OT-227 E72873

    Untitled

    Abstract: No abstract text available
    Text: IXKC 40N60C CoolMOS Power MOSFET VDSS = 600 V ID25 = 28 A RDS on max = 95 mΩ Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM D G G D S S E72873 Features


    Original     		PDF 40N60C ISOPLUS220TM E72873

    20n60c

    Abstract: 40n60c 40n60 40N60SCD1 75n60 CoolMOS IXYS DATE CODE Ixkn D-68623 IXKC 20n60c
    Text: Product Change Notice PCN No.: 05-03 Customer: All IXYS product type: CoolMOS products in 600V: IXKC 20N60C, IXKC 40N60C IXKR 40N60C IXKF 40N60SCD1 IXKN 40N60C, IXKN 75N60C Description of change: CoolMOS die type C2 will be replaced by C3 Reason for change:


    Original     		PDF 20N60C, 40N60C 40N60SCD1 40N60C, 75N60C 14F12 20n60c 40n60c 40n60 40N60SCD1 75n60 CoolMOS IXYS DATE CODE Ixkn D-68623 IXKC 20n60c

    75n60

    Abstract: 40n60 40n60 transistor IXKR 40N60C E72873 ISOPLUS247 lID25 Ixkn ixkr 40n60c
    Text: CoolMOS Power MOSFET Contents VDSS max V ID25 TC = 25 °C A RDS on 600 40 70 40 70 75 35 ISOPLUS247TM miniBLOC Page mΩ Ω IXKN 40N60C C5-2 IXKR 40N60 IXKN 75N60 C5-4 C5-6 CoolMOS is a trademark ofInfineon Technologies AG. 2000 IXYS All rights reserved


    Original     		PDF ISOPLUS247TM 40N60C 40N60 75N60 OT-227 E72873 75n60 40n60 40n60 transistor IXKR 40N60C E72873 ISOPLUS247 lID25 Ixkn ixkr 40n60c

    Untitled

    Abstract: No abstract text available
    Text: □ IX Y S Advanced Technical Information IXSK 40N60CD1 IXSX 40N60CD1 IGBT with Diode PLUS247 package ^fi typ V CES Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 M£i 600 V V GES Continuous ±20 V v GEM Transient ±30 V ^C25 Tc = 25°C, limited by leads


    OCR Scan     		PDF 40N60CD1 PLUS247â