ISOPLUS220A Search Results

Contextual Info: DGSS 20-06CC VRRM = 600 V 2x300V IDC = 38 A CJunction = 16 pF Gallium Arsenide Schottky Rectifier Second generation ISOPLUS220TM Electrically Isolated Back Surface Preliminary Data Type Marking on product DGSS 20-06CC DGSS 20-06CC Circuit Package ISOPLUS220A

IXYS SEMICONDUCTOR

Contextual Info: DGSS 10-06CC VRRM = 2x300 V IDC = 18 A CJunction = 10.7 pF Gallium Arsenide Schottky Rectifier Second generation ISOPLUS220TM Electrically Isolated Back Surface Preliminary Data Type Circuit Package ISOPLUS220A DGSS 10-06CC 1 2 3 1 3 Features Conditions Maximum Ratings

Contextual Info: DGSS 6-06CC VRRM = 600 V 2x300V IDC = 11 A CJunction = 4 pF Gallium Arsenide Schottky Rectifier Second generation ISOPLUS220TM Electrically Isolated Back Surface Preliminary Data Type Marking on product DGSS 6-06CC DGSS 6-06CC Circuit Package ISOPLUS220A

Contextual Info: DGSS 6-06CC VRRM = 600 V 2x300V IDC = 11 A CJunction = 4 pF Gallium Arsenide Schottky Rectifier Second generation ISOPLUS220TM Electrically Isolated Back Surface Preliminary Data Type Marking on product DGSS 6-06CC DGSS 6-06CC Circuit Package ISOPLUS220A

Contextual Info: DGSS 10-06CC VRRM = 600 V 2x300V IDC = 25 A CJunction = 10.7 pF Gallium Arsenide Schottky Rectifier Second generation ISOPLUS220TM Electrically Isolated Back Surface Preliminary Data Type Marking on product DGSS 10-06CC DGSS 10-06CC Circuit Package ISOPLUS220A

10-06CC

Abstract: DGSS
Contextual Info: DGSS 10-06CC VRRM = 600 V 2x300V IDC = 25 A CJunction = 10.7 pF Gallium Arsenide Schottky Rectifier Second generation ISOPLUS220TM Electrically Isolated Back Surface Preliminary Data Type Marking on product DGSS 10-06CC DGSS 10-06CC Circuit Package ISOPLUS220A

Contextual Info: DGSS 10-06CC VRRM = 600 V 2x300V IDC = 25 A CJunction = 10.7 pF Gallium Arsenide Schottky Rectifier Second generation ISOPLUS220TM Electrically Isolated Back Surface Preliminary Data Type Marking on product DGSS 10-06CC DGSS 10-06CC Circuit Package ISOPLUS220A

6-06CC

Contextual Info: DGSS 6-06CC VRRM = 600 V 2x300V IDC = 11 A CJunction = 4 pF Gallium Arsenide Schottky Rectifier Second generation ISOPLUS220TM Electrically Isolated Back Surface Preliminary Data Type Marking on product DGSS 6-06CC DGSS 6-06CC Circuit Package ISOPLUS220A

Contextual Info: DGSS 20-06CC VRRM = 600 V 2x300V IDC = 38 A CJunction = 16 pF Gallium Arsenide Schottky Rectifier Second generation ISOPLUS220TM Electrically Isolated Back Surface Preliminary Data Type Marking on product DGSS 20-06CC DGSS 20-06CC Circuit Package ISOPLUS220A

Contextual Info: DGSS 10-06CC VRRM = 600 V 2x300V IDC = 18 A CJunction = 10.7 pF Gallium Arsenide Schottky Rectifier Second generation ISOPLUS220TM Electrically Isolated Back Surface Preliminary Data Type Marking on product DGSS 10-06CC DGSS 10-06CC Circuit Package ISOPLUS220A

2x300V

Abstract: g0520
Contextual Info: DGSS 20-06CC VRRM = 600 V 2x300V IDC = 38 A CJunction = 16 pF Gallium Arsenide Schottky Rectifier Second generation ISOPLUS220TM Electrically Isolated Back Surface Preliminary Data Type Marking on product DGSS 20-06CC DGSS 20-06CC Circuit Package ISOPLUS220A

DSI30-08

Contextual Info: DSI30-08AS Standard Rectifier VRRM = 800 V I FAV = 30 A VF = 1.25 V Single Diode Part number DSI30-08AS Backside: cathode 1 3 2/4 Features / Advantages: Applications: Package: TO-263 D2Pak ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop

Contextual Info: DSP8-08S Standard Rectifier VRRM = 2x 800 V I FAV = 8A VF = 1.08 V Phase leg Part number DSP8-08S Backside: anode/cathode 1 2/4 3 Features / Advantages: Applications: Package: TO-263 D2Pak ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop

CLA30E1200HB

Abstract: CMA30E1600PB CMA30E1600PN CLA30E1200PB CLA30E1200PC
Contextual Info: CMA 30 E 1600 PB advanced V RRM = I T RMS = I T(AV)M = Standard SCR Single Thyristor 1600 V 47 A 30 A Part number 2 CMA 30 E 1600 PB 1 3 Backside: anode Features / Advantages: Applications: Package: ● Thyristor for line frequency ● Planar passivated chip

CMA30E

Abstract: CLA30E1200HB
Contextual Info: CMA 30 E 1600 PB advanced V RRM = I T RMS = I T(AV)M = Standard SCR Single Thyristor 1600 V 47 A 30 A Part number 2 1 3 Backside: anode Applications: Features / Advantages: Thyristor for line frequency Planar passivated chip Long-term stability of blocking currents and voltages

Contextual Info: DSI30-12AS Standard Rectifier VRRM = 1200 V I FAV = 30 A VF = 1.25 V Single Diode Part number DSI30-12AS Backside: cathode 1 3 2/4 Features / Advantages: Applications: Package: TO-263 D2Pak ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop

Contextual Info: DSI30-16AS Standard Rectifier VRRM = 1600 V I FAV = 30 A VF = 1.25 V Single Diode Part number DSI30-16AS Backside: cathode 1 3 2/4 Features / Advantages: Applications: Package: TO-263 D2Pak ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop

diode pj 70

Abstract: PJ 75 MM diode pj 70 diode DPG10P400PJ PJ diode diode pj IXYS DS 145 pj 35 diode
Contextual Info: DPG 10 P 400 PJ V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Phase leg Part number 1 2 400 V 10 A 45 ns 3 DPG 10 P 400 PJ Backside: isolated Features / Advantages: Applications: Package: ● Planar passivated chips

Contextual Info: DSP8-12AS Standard Rectifier VRRM = 2x 1200 V I FAV = 8A VF = 1.08 V Phase leg Part number DSP8-12AS Backside: anode/cathode 1 2/4 3 Features / Advantages: Applications: Package: TO-263 D2Pak ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop

diode pj-039

Abstract: pj 50 diode PJ diode DIODE pj PJ 75 MM diode Diode marking code PJ DPG10P400PJ PJ 75 diode marking pj pj 45 diode
Contextual Info: DPG 10 P 400 PJ advanced V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Phase leg Part number 1 2 400 V 10 A 45 ns 3 DPG 10 P 400 PJ Backside: isolated Features / Advantages: Applications: Package: ● Planar passivated chips

Contextual Info: DPG 10 P 400 PJ V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Phase leg Part number 1 2 400 V 10 A 45 ns 3 Backside: isolated Features / Advantages: Package: Applications: Planar passivated chips Very low leakage current

DSEC59

Contextual Info: DHG 60 C 600 HB preliminary V RRM = 600 V I FAV = 2x 30 A t rr = 40 ns Sonic Fast Recovery Diode High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number 1 2 3 Backside: cathode Features / Advantages: Package: Applications:

DSEC30-06A

Contextual Info: DSEC30-06A HiPerFRED VRRM = 600 V I FAV = 2x 15 A t rr = 35 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number DSEC30-06A Backside: cathode 1 2 3 Features / Advantages: Applications: Package: TO-247 ● Planar passivated chips

Contextual Info: DPG10P400PJ HiPerFRED² VRRM = 2x 400 V I FAV = 10 A t rr = 45 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Phase leg Part number DPG10P400PJ Backside: isolated 1 2 3 Features / Advantages: Applications: Package: ISOPLUS220 ● Planar passivated chips