IRFBC40 Search Results

Contextual Info: IRFBC40AS, SiHFBC40AS Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness

MAR 740 MOSFET TRANSISTOR

Abstract: D 1402
Contextual Info: IRFBC40A, SiHFBC40A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 1.2 Qg (Max.) (nC) 42 Qgs (nC) 10 Qgd (nC) 20 Configuration • Improved Gate, Avalanche and Dynamic dV/dt

MAR 740 MOSFET TRANSISTOR

Abstract: P 648 H
Contextual Info: IRFBC40A, SiHFBC40A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 1.2 Qg (Max.) (nC) 42 Qgs (nC) 10 Qgd (nC) 20 Configuration • Improved Gate, Avalanche and Dynamic dV/dt

IRFBC40A

Contextual Info: PD -91885A IRFBC40A SMPS MOSFET HEXFET Power MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic

Contextual Info: PD - 94986 SMPS MOSFET IRFBC40APbF HEXFET Power MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic

Contextual Info: PD - 94988 IRFBC40LCPbF • Lead-Free ww.irf.com Document Number: 91114 1 2/9/04 www.vishay.com 1 IRFBC40LCPbF Document Number: 91114 www.vishay.com 2 IRFBC40LCPbF Document Number: 91114 www.vishay.com 3 IRFBC40LCPbF Document Number: 91114 www.vishay.com 4

AN609

Abstract: IRFBC40A SiHFBC40A 9043-2
Contextual Info: IRFBC40A_RC, SiHFBC40A_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

MOSFET IRF 570

Abstract: IRFBC40R MOSFET IRF 940 6.2a 600v irf IRFBC42R IRF N-Channel Power MOSFETs irf mosfets gj6b 360VX
Contextual Info: . Rugged Power MOSFETs File N u m be r IRFBC40R, IRFBC42R 2157 Avalanche-Energy-Rated N-Channel Power MOSFETs 6 .2A and 5.4A, 600V rbston ~ 1-20 and 1.60 N-CHANNEL ENHANCEMENT MODE Features: • Repetitive Avalanche Ratings m Simple Drive Requirements • Ease o l Paralleling

irfbc40

Contextual Info: HE D I MÛ55452 GODÖLSG 1 | Data Sheet No. PD-9.506A INTERNATIONAL RE CT I F I E R INTERNATIONAL RECTIFIER IO R REPETITIVE AVALANCHE AND dv/dt RATED* HEXFET TRANSISTORS IRFBC40 IRFBC4S N-CHANNEL 600 Volt, 1.2 Ohm HEXFET TO-220AB Plastic Package Product Summary

Contextual Info: IRFBC40 Semiconductor Data Sheet July 1999 6.2A, 600V, 1.200 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

Contextual Info: PD-91885A International IOR Rectifier SMPS MOSFET IRFBC40A HEXFET Power MOSFET A pplications • • • Switch Mode Power Supply SMPS Uninterruptable Power Supply High speed power switching V dss 600V Rds(on) max Id 1.2£2 6.2A B e n efits • Low Gate Charge Qg results in Simple

YW 431

Abstract: AN-994 IRFBC40A IRFBC40AS
Contextual Info: PD- 91897A SMPS MOSFET IRFBC40AS HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic

Contextual Info: IRFBC40AS, SiHFBC40AS Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness

91112

Contextual Info: PD - 94986 SMPS MOSFET IRFBC40APbF HEXFET Power MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic

Contextual Info: PD - 94988 IRFBC40LCPbF • Lead-Free ww.irf.com 1 1 IRFBC40LCPbF 2 IRFBC40LCPbF TO-220AB Package Outline Dimensions are shown in millimeters inches 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) -B- 3.78 (.149) 3.54 (.139) 4.69 (.185) 4.20 (.165) -A-

Package outline To220ab

Contextual Info: PD - 94988 IRFBC40LCPbF • Lead-Free www.irf.com 1 2/9/04 IRFBC40LCPbF 2 www.irf.com IRFBC40LCPbF www.irf.com 3 IRFBC40LCPbF 4 www.irf.com IRFBC40LCPbF www.irf.com 5 IRFBC40LCPbF 6 www.irf.com IRFBC40LCPbF www.irf.com 7 IRFBC40LCPbF TO-220AB Package Outline

Contextual Info: IRFBC40A, SiHFBC40A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 1.2 Qg (Max.) (nC) 42 Qgs (nC) 10 Qgd (nC) 20 Configuration • Improved Gate, Avalanche and Dynamic dV/dt

Contextual Info: IRFBC40LC, SiHFBC40LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 600 V RDS(on) (Ω) VGS = 10 V 1.2 Qg (Max.) (nC) 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Single D Available RoHS* COMPLIANT DESCRIPTION TO-220

pal 011

Abstract: Ultra High Voltage Hexfets Pal011 mosfet ir 250 n ne 555 diode
Contextual Info: PD-9.1070 International ioR Rectifier IRFBC40LC HEXFET Power MOSFET • • • • • • Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced Ciss, Coss, Crss Extremely High Frequency Operation Repetitive Avalanche Rated

YW 431

Abstract: AN-994 IRFBC40A IRFBC40AS mar 532 diode SM 88A
Contextual Info: PD- 91897A SMPS MOSFET IRFBC40AS HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic

Contextual Info: IRFBC40A, SiHFBC40A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 1.2 Qg (Max.) (nC) 42 Qgs (nC) 10 Qgd (nC) 20 Configuration • Improved Gate, Avalanche and Dynamic dV/dt

Contextual Info: PD - 94988 IRFBC40LCPbF • Lead-Free ww.irf.com Document Number: 91114 1 2/9/04 www.vishay.com 1 IRFBC40LCPbF Document Number: 91114 www.vishay.com 2 IRFBC40LCPbF Document Number: 91114 www.vishay.com 3 IRFBC40LCPbF Document Number: 91114 www.vishay.com 4

Contextual Info: IRFBC40LC, SiHFBC40LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 600 RDS(on) () VGS = 10 V 1.2 Qg (Max.) (nC) 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Single COMPLIANT This new series of low charge Power MOSFETs achieve

IRFBC40L

Abstract: IRFBC40S SiHFBC40L SiHFBC40L-E3 SiHFBC40S
Contextual Info: IRFBC40S, SiHFBC40S, IRFBC40L, SiHFBC40L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount (IRFBC40S, SiHFBC40S) • Low-Profile Through-Hole (IRFBC40L, SiHFBC40L) • Available in Tape and Reel (IRFBC40S, SiHFBC40S)