IRFZ40 Search Results

Contextual Info: 7^2^537 Q045752 4^0 • S C T H SGS-THOMSON m IRFZ40 IRFZ40FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRFZ40 IRFZ40FI V dss R d S o ii Id 50 V 50 V < 0.028 n < 0.028 £i 50 A 27 A TYPICAL R DS(on) = 0.022 Q AVALAN C H E RUGGED TECHNOLO GY

IRFZ44

Abstract: IRFZ45 IRFZ44 mosfet IRFZ42 IRFZ44 MOSFETs IRFz44 n-channel MOSFET IRFZ40
Contextual Info: IRFZ44/45 IRFZ40/42 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower R d s o n Improved inductive ru gge d n e ss Fast sw itching tim es R u g g e d polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

IRFZ40PBF

Contextual Info: IRFZ40, SiHFZ40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 10 V • 175 °C Operating Temperature 0.028 67 • Fast Switching Qgs (nC) 18 • Ease of Paralleling Qgd (nC) 25 • Simple Drive Requirements

1rfz42

Contextual Info: 3 DE D / 3 T S G • S - 7 ^ 5 3 7 T t i O M S ODB^flM1^ 5 O IRFZ40 1RFZ42 N 7 Ib a 1 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE VDss ^DS on IRFZ40 50 V 0.028 ß 35 A IRFZ42 50 V 0.035 fi 35 A . VERY LOW RDS(on) • LOW DRIVE ENERGY FOR EASY DRIVE

schematic diagram motor control

Abstract: C5027 5027A schematic diagram motor C3519 IRFZ40 IRFZ40FI
Contextual Info: IRFZ40 IRFZ40FI N-CHANNEL 50V - 0.022 Ω - 50A TO-220/ISOWATT220 POWER MOS TRANSISTORS Figure 1. Package Table 1. General Features Type VDSS RDS on ID IRFZ40 50 V < 0.028 Ω 50 A IRFZ40FI 50 V < 0.028 Ω 27 A FEATURES SUMMARY • TYPICAL RDS(on) = 0.022 Ω

Contextual Info: IRFZ40, SiHFZ40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 10 V • 175 °C Operating Temperature 0.028 67 • Fast Switching Qgs (nC) 18 • Ease of Paralleling Qgd (nC) 25 • Simple Drive Requirements

IRFZ25

Abstract: IRF512 IRF51 IRFZ42 IRFZ30
Contextual Info: n c A r c International üç»!Rectifier I Power MOSFETs Plastic Insertable Package TO-220 N-Channel Part Number IRFZ12 IRFZ10 IRFZ22 IRFZ20 IRFZ32 IRFZ30 IRFZ42 IRFZ40 Vqs Drain Source Voltage Volts RDS(on) On-State Resistance (Ohms) ID Continuous Drain Current

IRFZ40

Abstract: irfz42 IRFZ42N
Contextual Info: SCS-THOMSON IRFZ40 IRFZ42 [ * Q m i ( M ( 0M (g s N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS R DS(on 'd IRF240 50 V 0.028 ß 35 A IRF242 50 V 0.035 Q 35 A . VER YLO W RDS(on) • LOW DRIVE ENERGY FOR EASY DRIVE • HIGH TRANSCONDUCTANCE /Crss RATIO

C3519

Abstract: IRFZ40 IRFZ40FI
Contextual Info: IRFZ40 IRFZ40FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRFZ40 IRFZ40FI • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 50 V 50 V < 0.028 Ω < 0.028 Ω 50 A 27 A TYPICAL RDS(on) = 0.022 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

C5027

Abstract: C3519 IRFZ40 IRFZ40FI
Contextual Info: IRFZ40 IRFZ40FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRFZ40 IRFZ40FI • ■ ■ ■ ■ ■ ■ VDSS R DS on ID 50 V 50 V < 0.028 Ω < 0.028 Ω 50 A 27 A TYPICAL RDS(on) = 0.022 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC

Contextual Info: SAMSUNG ELECTRONICS INC b4E D • 7^4142 IRFZ44/45 IRFZ40/42 QD124SD TES ■ SIIGK N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower R d s o n Improved inductive ru gge d n e ss Fast sw itching tim es R u g g e d polysilicon gate cell structure

ra 220 diode

Contextual Info: SGS-THOMSON !M Œ » IO T q K S IRFZ40 IRFZ40FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IR F Z 4 0 IR F Z 4 0 F I V dss 50 V 50 V R lo d S ( oh ) 0 .0 2 8 n 0 .0 2 8 Q 50 A 27 A . . • . ■ . AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED

BU271

Abstract: IRF540 24334 FSN0920
Contextual Info: Microsemi N-Channel MOSFETs Part Number ! IRFZ40 ! BU271 i FSN1606 FSF2506 FSF2606 ! IRFZ34 FSE3506 MSAER45N06A : IRFZ44 IRFZ48 MSAEZ58N06A 1 MSAFZ58N06A MSAFX76N07A ! MSAEX150N07E IRF510 1IRF520 IRF530 FSN1410 FSF2210 FSF2510 IRF540 FSE3510 MSAER38N10A MSAFR38N10A

SSH6N80

Abstract: rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50
Contextual Info: Sales type BUZ10 BUZ11 BUZ11A BUZ71 BUZ71A BUZ72A BUZ80A IRF520 IRF530 IRF540 IRF620 IRF630 IRF640 IRF730 IRF740 IRF820 IRF830 IRF840 IRFBC30 IRFBC40 IRFZ40 MTP3055E STB10NA40 STB10NB20 STB10NB50 STB11NB40 STB15N25 STB16NB25 STB18N20 STB19NB20 STB30N10 STB36NE03L

SSP60N06

Abstract: irf630 irf640 SSP50N06 ssp15n06
Contextual Info: MOSFETs FUNCTION GUIDE TO-220 N-CHANNEL Part Number IRFZ10 BVdss^V lD on)(A) 50 10.00 15.00 16.00 30.00 IRFZ20 SSP15N05 IRFZ30 IRFZ40 SSP50N05 SSP60N05 IRFZ14 IRFZ24 60 SSP15N06 IRFZ34 IRFZ44 SSP50N06 SSP60N06 IRF511 80 IRF521 IRF531 IRF541 IRF510 IRF520

IRFZ40PBF

Abstract: IRFZ40 SiHFZ40 SiHFZ40-E3 marking 0936
Contextual Info: IRFZ40, SiHFZ40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V • 175 °C Operating Temperature 0.028 Qg (Max.) (nC) 67 • Fast Switching Qgs (nC) 18 • Ease of Paralleling Qgd (nC) 25

8 pin ic 9435A

Abstract: 9435a 9435A transistor c442 diode c446 transistor irfz40 RFZ4 diode c446 9435a mosfet IRFZ42N
Contextual Info: HE D I ^<355452 OQQôtilE 3 | Data Sheet No. PD-9.435A INTERNATIONAL R E C T IF IE R T-39-13 I N T E R N A T I O N A L R E C T I F I E R Ii o r I HEXFET TRANSISTORS IRFZ40 IRFZ42 N -C h a n n e l 5 0 VOLT POWER MOSFETs Product Summary 50 Volt, 0.028 Ohm HEXFET

IRFZ40

Abstract: SiHFZ40 SiHFZ40-E3
Contextual Info: IRFZ40, SiHFZ40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 10 V • 175 °C Operating Temperature 0.028 67 • Fast Switching Qgs (nC) 18 • Ease of Paralleling Qgd (nC) 25 • Simple Drive Requirements

IRFZ40

Abstract: IRFZ40FI
Contextual Info: IRFZ40 IRFZ40FI N-CHANNEL 50V - 0.022 Ω - 50A TO-220/ISOWATT220 POWER MOS TRANSISTORS Figure 1. Package Table 1. General Features Type VDSS RDS on ID IRFZ40 50 V < 0.028 Ω 50 A IRFZ40FI 50 V < 0.028 Ω 27 A FEATURES SUMMARY • TYPICAL RDS(on) = 0.022 Ω

z40 mosfet

Abstract: IRFZ42 IRFZ40 221A-04
Contextual Info: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA IRFZ40 IRFZ42 P o w e r F ie ld E f f e c t T ra n s is to rs N -C h a n n e l E n h a n c e m e n t-M o d e S ilic o n G a te T M O S T h e « TMOS Power fETa ore designed for lo w voltage. hlQfi «peed power v»MK:hlr>3 Bppilcntlon* such as switching

Contextual Info: IRFZ40, SiHFZ40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 10 V • 175 °C Operating Temperature 0.028 67 • Fast Switching Qgs (nC) 18 • Ease of Paralleling Qgd (nC) 25 • Simple Drive Requirements

50N05E

Abstract: TP50N05E POWER MOSFET irfz40
Contextual Info: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA IRFZ40 IRFZ42 P o w e r Field E ffe c t T ra n s is to rs N-Channel Enhancem ent-M ode S ilic o n G ate T M O S These TM OS Pow er FETs are designed fo r lo w voltage, h ig h speed p o w e r s w itc h in g a p p lica tio n s such as sw itch in g

IRFZ42

Contextual Info: / 3 T IR F Z 4 0 [j^ D Ë ^ tlIL tiC T M D g i_ IR F Z 4 2 S G S -T H O M S O N N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS ^DS on IRFZ40 50 V 0.028 IRFZ42 50 V 0.035 fi fi Id 35 A 35 A • VERY LOW RDS(on) • LOW DRIVE ENERGY FOR EASY DRIVE

irfz44

Contextual Info: IRFZ44/45 IRFZ40/42 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower R d s i o n Improved inductive ruggedness Fast sw itching tim es Rugged polysilicon gate cell structure Lower input cap acitance Extended safe operating area Improved high tem perature reliability