RFD14N05L Search Results

14N05

Abstract: 14n05l 05LSM AN7254 AN9321 AN9322 RFD14N05L RFD14N05LSM RFD14N05LSM9A TB334
Contextual Info: RFD14N05L, RFD14N05LSM Data Sheet 14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives

14n05l

Contextual Info: RFD14N05L, RFD14N05LSM, RFP14N05L Data Sheet Title FD1 05L D14 5LS P14 5L bt A, V, 00 m, gic vel, Cha el wer OSTs) utho eyrds ter- April 1999 14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs Features These are N-channel power MOSFETs manufactured using

f14n05l

Abstract: f14n05 14n05l 14N05 AN9321 RFD14N05L RFD14N05LSM RFD14N05LSM9A RFP14N05L TB334
Contextual Info: RFD14N05L, RFD14N05LSM, RFP14N05L Data Sheet November 2004 14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs Features • 14A, 50V These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives

14n05l

Abstract: FP14N05L RFD14N05LSM9A 14N05
Contextual Info: RFD14N05L, RFD14N05LSM, RFP14N05L in te v s il D a ta S h e e t A p r i l 1999 14A, SOV, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs 2 2 4 6 .3 Features • 14A, 50V These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature

Contextual Info: RFD14N05L, RFD14N05LSM Data Sheet N-Channel Logic Level Power MOSFET 50 V, 14 A, 100 mΩ These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding

Contextual Info: RFD14N05L Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)50 V(BR)GSS (V)10 I(D) Max. (A)14# I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)35# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)40# Minimum Operating Temp (øC)-55õ

Contextual Info: RFD14N05LSM Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)50 V(BR)GSS (V)10 I(D) Max. (A)14# I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)35# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)40# Minimum Operating Temp (øC)-55õ

14n05l

Abstract: 14N05 RFD14N05LSM9A TB334 AN9321 RFD14N05L RFD14N05LSM RFP14N05L
Contextual Info: RFD14N05L, RFD14N05LSM, RFP14N05L Data Sheet January 2002 14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs Features • 14A, 50V These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives

IRF540 complementary

Abstract: IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR
Contextual Info: Sales type RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L RFP25N05 RFP14N05 HUF75344P3 HUF75344S3S HUF75345S3S HUF75345G3 HUF75343S3S HUF75307D3S HUF75344G3 HUF75345P3 HUF75343P3 HUF5343G3 HUF75321P3 HUF75329P3

14n05l

Abstract: 14N05 Transistor TT 2246 TT 2246 RFD14N05LSM RFP14N05L RFD14N05L rs 355 integrated circuits FP14N05L AN7254
Contextual Info: RFD14N05L, RFD14N05LSM, RFP14N05L S E M I C O N D U C T O R 14A, 50V, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packaging • 14A, 50V JEDEC TO-220AB SOURCE DRAIN GATE • rDS ON = 0.100Ω • Temperature Compensating PSPICE Model

f14n05l

Contextual Info: RFD14N05L, RFD14N05LSM, RFP14N05L Data Sheet November 2004 14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs Features • 14A, 50V These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives

RFD14N05L

Abstract: 14N05 RFP14N05L RFD14N05LSM
Contextual Info: Logic-Level Pow er M O S F E T s - RFD14N05L, RFD14N05LSM, RFP14N05L File Number 2246 N-Channel Logic-Level Enhancement-Mode Power Field-Effect Transistors MegaFETs 14 A, 50 V rDs(on): 0.1 Cl N -C H A N N EL E N H A N C E M E N T M ODE

tt 2246

Abstract: Transistor TT 2246 14n05l equivalent tt 2246 14n05 TT 2246 datasheet 14A, 50V, Logic Level, N-Channel TO-252 RFP14N05L AN9321 RFD14N05L
Contextual Info: RFD14N05L, RFD14N05LSM, RFP14N05L Data Sheet April 1999 14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs • 14A, 50V Formerly developmental type TA09870. Ordering Information PACKAGE 2246.3 Features These are N-channel power MOSFETs manufactured using

Contextual Info: RFD14N05L, RFD14N05LSM, RFP14N05L S e m ico n d ucto r Data Sheet April 1999 14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs • 14A, 50V • r DS ON = 0 .1 0 0 i2 • Temperature Compensating PSPICE Model • Can be Driven Directly from CMOS, NMOS, and

Contextual Info: HARRIS SENICOND SECTOR t>AE D • M3D2271 005110 3 115 ■ HAS PCF14N05LW PCF14NÛ5LD H a r r is SEMICONDUCTOR January1993 N-Channel MOS Chip Features Die • Passivated • Contact Metallization • Gate and Source - Aluminum Silicon • Drain - Tri-Metal (Al-Ti-Ni

marking code E5 SMD ic sot23-5

Abstract: Satellite DISEQC SWITCH 4x1 acer laptop motherboard circuit diagram acer laptop battery pinout nec tokin oe 128 schematic LG TV lcd backlight inverter ACER laptop schematic diagram HP COMPAQ MOTHERBOARD CIRCUIT diagram schematic acer lcd backlight inverter APC 5kv UPS CIRCUIT DIAGRAM
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toshiba laptop schematic diagram

Abstract: acer motherboard circuit diagram MAX1270 C source code MAX11871 mp 9141 es dc-dc lm324 pwm speed motor 220v DC MOTOR SPEED CONTROLLER schematic ACER laptop schematic diagram L-band down converter for satellite tuner wideband acer laptop MOTHERBOARD Chip Level MANUAL acer laptop motherboard circuit diagram
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Complementary MOSFETs buz11

Abstract: irfd120 Power MOSFET Selection Guide HRF3205 MOSFET Selection Guide IRFP440 BUZ71 IRFD120 HRF3205 equivalent IRF610 complementary IRFD110
Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12

FDC6331

Abstract: fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305
Contextual Info: Discrete Temperature range Software version Revision date 2N7002 SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A 2N7002MTF SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A BS170 TO-92-3 Electrical 25°C to 125°C Orcad 9.1 Mar 22, 2002 BSS123 SOT-23-3

RF1S42N03L

Contextual Info: HARRI S DI S CRE TE P O W E R MOS F E T LINE T O - 2 5 2 PACKAGE STANDARD GATE DEVICES V dss V r DS(ON) 1 (A ) T O -2 5 2 A A CHANNEL 20V 0.0250 20A RFD20N02SM N 50V 0.3000 8A RFD8P05SM P 0.0470 16A RFD16N05SM N 0.100Q 14A RFD14N05SM N 0.1500 15A RFD15P05SM

14n05l

Abstract: 14N05LSM RFD14N05L
Contextual Info: is HARFRIS U U R F D 14N 0 5 L , R F D 14N 0 5 L S M , R F P 1 4 N 0 5 L. S E M I C O N D U C T O R 14A, 50V, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs D ece m b e r 1995 Packaging Features JE D EC TO-22QAB • 14A , 50V • ^DS{ON = 0.10012

mosfets

Abstract: Power MOSFETs MOSFET ESD Rated RFD14N05L
Contextual Info: I- — POWER MOSFETsfS LOGIC LEVEL POWER MOSFETs PAGE

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
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irfb4115

Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
Contextual Info: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .