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    onsemi 2N7002

    MOSFET N-CH 60V 115MA SOT-23
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    Diotec Semiconductor AG 2N7002

    MOSFET N-CH 60V 280MA SOT23-3
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    DigiKey 2N7002 Digi-Reel 16,483 1
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    UMW 2N7002

    S0T-23 MOSFETS ROHS
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    SLKOR 2N7002

    60V 115MA 7.5@10V,500MA 225MW N
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    EVVO Semiconductor 2N7002

    MOSFET N-CH 60V 200MA SOT23-3
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    2N7002 Datasheets (407)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N7002 Calogic N-Channel Enhancement-Mode MOS Transistor Original PDF
    2N7002 Central Semiconductor N-CHANNEL ENHANCEMENT-MODE MOSFET Original PDF
    2N7002 Central Semiconductor MOSFET, Enhancement, N Channel, 60V, SOT-23, 3-Pin Original PDF
    2N7002 Central Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 115MA SOT-23 Original PDF
    2N7002 Comchip Technology N-channel transistor. Drain-sourse voltage 60 V. Original PDF
    2N7002 Diodes Incorporated N-CHANNEL ENHANCEMENT MODE MOSFET Original PDF
    2N7002 Diodes Incorporated Short Form Selection Guide Original PDF
    2N7002 Diodes Incorporated TRANS MOSFET N-CH 60V 0.115A 3SOT-23 Original PDF
    2N7002 Diodes Incorporated N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Original PDF
    2N7002 Diodes Incorporated TRANS/MOSFET/SMD/2N7002L/SOT23 Original PDF
    2N7002 Fairchild Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original PDF
    2N7002 Fairchild Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original PDF
    2N7002 Fairchild Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original PDF
    2N7002 Fairchild Semiconductor TRANS MOSFET N-CH 60V 0.115A 3SOT-23 T/R Original PDF
    2N7002 Fairchild Semiconductor N-Channel Small Signal MOSFET Original PDF
    2N7002 Galaxy Semi-Conductor Holdings Small Signal MOSFET Transistor Original PDF
    2N7002 General Semiconductor MOSFET, Enhancement, N Channel, 60V, SOT-23, 3-Pin Original PDF
    2N7002 General Semiconductor DMOS Transistors (N-Channel) Original PDF
    2N7002 Infineon Technologies N-Channel Small Signal MOSFETs (20V - 800V); Package: PG-SOT23-3; Package: SOT-23; VDS (max): 60.0 V; RDS (on) (max) (@10V): 3,000.0 mOhm; RDS (on) (max) (@4.5V): 4,000.0 mOhm; RDS (on) (max) (@2.5V): -; Original PDF
    2N7002 Kexin N-Channel MOSFET Original PDF
    ...

    2N7002 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TRANSISTOR SMD MARKING zg

    Abstract: 2N7002BKV transistor smd zG TRANSISTOR SMD MARKING CODE zg
    Text: 2N7002BKV 60 V, 340 mA dual N-channel Trench MOSFET Rev. 2 — 22 September 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in an ultra small SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET


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    PDF 2N7002BKV OT666 AEC-Q101 771-2N7002BKV115 2N7002BKV TRANSISTOR SMD MARKING zg transistor smd zG TRANSISTOR SMD MARKING CODE zg

    2N7002BKW

    Abstract: 2n7002bk TRANSISTOR SMD MARKING CODE 50 006-AA
    Text: 2N7002BKW 60 V, 310 mA N-channel Trench MOSFET Rev. 1 — 17 June 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.


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    PDF 2N7002BKW OT323 SC-70) AEC-Q101 771-2N7002BKW115 2N7002BKW 2n7002bk TRANSISTOR SMD MARKING CODE 50 006-AA

    Untitled

    Abstract: No abstract text available
    Text: 2N7002CK 60 V, 0.3 A N-channel Trench MOSFET Rev. 01 — 11 September 2009 Product data sheet 1. Product profile 1.1 General description ESD protected N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using


    Original
    PDF 2N7002CK O-236AB) 2N7002CK 771-2N7002CK215

    2N7002K-7

    Abstract: 2N7002KQ-7 2N7002K1
    Text: 2N7002K N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON max ID max TA = 25°C 2Ω @ VGS = 10V 380mA 3Ω @ VGS = 5V 310mA • • • • • 60V • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant "Green"


    Original
    PDF 2N7002K 380mA 310mA AEC-Q101 DS30896 621-2N7002K-7 2N7002K-7 2N7002K-7 2N7002KQ-7 2N7002K1

    2N7002A-7

    Abstract: No abstract text available
    Text: 2N7002A N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits V BR DSS RDS(ON) max ID max TA = 25°C 60V 6Ω @ VGS = 5V 200mA • • • • • • • • N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed


    Original
    PDF 2N7002A 200mA AEC-Q101 DS31360 621-2N7002A-7 2N7002A-7 2N7002A-7

    2N7002KA

    Abstract: No abstract text available
    Text: 2N7002KA N-channel TrenchMOS FET Rev. 03 — 25 February 2008 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features • Logic level compatible


    Original
    PDF 2N7002KA 2N7002KA

    2N7002F

    Abstract: 2N7002F_2
    Text: 2N7002F N-channel TrenchMOS FET Rev. 03 — 28 April 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features • Logic level threshold compatible


    Original
    PDF 2N7002F mbb076 2N7002F 2N7002F_2

    Untitled

    Abstract: No abstract text available
    Text: Formosa MS SMD MOSFET 2N7002DW List List. 1 Package outline. 2 Features. 2


    Original
    PDF 2N7002DW MIL-STD-883 JESD22-B102-D JESD22-A102-C 168hours MIL-STD-750D METHOD-1051 JESD22-A104-B 10min

    Untitled

    Abstract: No abstract text available
    Text: NEW PRODUCT 2N7002W N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR POWER SEMICONDUCTOR Features • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package


    Original
    PDF 2N7002W OT-323 OT-323, MIL-STD-202, 500mA DS30099

    2N7002G-AE2-R

    Abstract: 2N7002
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N7002 Power MOSFET 0.3 Amps, 60 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 2N7002 has been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. It can be used in most applications requiring up to


    Original
    PDF 2N7002 2N7002 400mA QW-R206-037 2N7002G-AE2-R

    an3r

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N7002ZT Preliminary Power MOSFET 300m Amps, 60 Volts DUAL N-CHANNEL ENHANCEMENT MODE MOSFET „ DESCRIPTION The UTC 2N7002ZT uses advanced technology to provide excellent RDS ON , low gate charge and low gate voltages during


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    PDF 2N7002ZT 2N7002ZT 2N7002ZTL-AN3-R 2N7002ZTG-AN3-R OT-523 QW-R502-538 an3r

    SOT-363

    Abstract: 2N7002ZDWG-AL6-R marking 2A sot-363
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N7002ZDW Preliminary Power MOSFET 300m Amps, 60 Volts DUAL N-CHANNEL ENHANCEMENT MODE MOSFET „ DESCRIPTION The UTC 2N7002ZDW uses advanced technology to provide excellent RDS ON , low gate charge and low gate voltages during


    Original
    PDF 2N7002ZDW 2N7002ZDW 2N7002ZDWL-AL6-R 2N7002ZDWG-AL6-R OT-363 QW-R502-540 SOT-363 marking 2A sot-363

    SOT-363 PWM

    Abstract: 2N7002Z
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N7002ZDW Power MOSFET 300mA, 60V DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET „ DESCRIPTION The UTC 2N7002ZDW uses advanced technology to provide excellent RDS ON , low gate charge and low gate voltages during operation. This device is suitable for use as a load switch or in


    Original
    PDF 2N7002ZDW 300mA, 2N7002ZDW 2N7002ZDWL-AL6-R 2N7002ZDWG-AL6-R OT-363 QW-R502-540 SOT-363 PWM 2N7002Z

    2N7002K

    Abstract: RG33
    Text: 2N7002K N-Channel Enhancement Mode Power MOSFET 3 DRAIN P b Lead Pb -Free 1 GATE DRAIN CURRENT 640m AMPERES DRAIN SOURCE VOLTAGE 60 VOLTAGE * * Gate Pretection Diode SOURCE 2 Description: The 2N7002K utilized advanced processing techniques to achieve the lowest possible on-resistance,


    Original
    PDF 2N7002K 2N7002K OT-23 Pul00mA width300s, 270/W 21-Nov-06 RG33

    Untitled

    Abstract: No abstract text available
    Text: MOSFET IC DIP Type SMD Type Type Product specification 2N7002 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 Voltage controlled small signal switch 0.4 3 High density cell design for low RDS ON 1 High saturation current capability


    Original
    PDF 2N7002 OT-23 500mA

    2N7002L

    Abstract: 2N7002LT3G 2N7002LT1G 2N7002LT3H
    Text: 2N7002L Small Signal MOSFET 60 V, 115 mA, N−Channel SOT−23 Features • AEC Qualified • PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDSS 60


    Original
    PDF 2N7002L OT-23 2N7002L/D 2N7002L 2N7002LT3G 2N7002LT1G 2N7002LT3H

    Untitled

    Abstract: No abstract text available
    Text: 2N7002 DMOS Transistors N-Channel D SOT-23 G .122 (3.1) .110 (2.8) .016 (0.4) Top View S .056 (1.43) .052 (1.33) 3 1 2 0.037 (0.95) .007 (0.175) .005 (0.125) 0.037 (0.95) .016 (0.4) 0.079 (2.0) .045 (1.15) .037 (0.95) max. .004 (0.1) .037(0.95) .037(0.95)


    Original
    PDF 2N7002 OT-23 OT-23

    Untitled

    Abstract: No abstract text available
    Text: 2N7002 DMOS Transistors N-Channel TO-263AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) Top View Mounting Pad Layout .056 (1.43) .052 (1.33) 3 1 Pin Configuration 1. Gate 2. Source 3. Drain 0.037 (0.95) 0.037 (0.95) .016 (0.4) 0.079 (2.0) .007 (0.175) .005 (0.125)


    Original
    PDF 2N7002 O-263AB OT-23) OT-23

    Marking Code S72

    Abstract: s72 sot 23 s72 mosfet 2N7002 S72 SOT-23
    Text: 2N7002 N-Channel Enhancement-Mode MOSFET VDS 60V RDS ON 3.0Ω ID 230mA TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) Top View .056 (1.43) .052 (1.33) 3 .016 (0.4) G 0.037 (0.95) 0.037 (0.95) Pin Configuration .007 (0.175) .005 (0.125) max. .004 (0.1)


    Original
    PDF 2N7002 230mA O-236AB OT-23) OT-23 E8/10K 30K/box 500mA 200mA 200mA, Marking Code S72 s72 sot 23 s72 mosfet 2N7002 S72 SOT-23

    Untitled

    Abstract: No abstract text available
    Text: WEITRON Small Signal MOSFET N-Channel 2N7002 3 DRAIN * “G” Lead Pb -Free Features: SOT-23 3 1 *Low On-Resistance : 3 Ω *Low Input Capacitance: 25PF *Low Out put Capacitance : 6PF *Low Threshole :1 .5V(TYE) *Fast Switching Speed : 7.5ns GATE 1 2 2 SOURCE


    Original
    PDF 2N7002 OT-23 OT-23

    2N7002K

    Abstract: No abstract text available
    Text: 2N7002K N-Channel Enhancement Mode Power MOSFET P b Lead Pb -Free 3 DRAIN 1 GATE * * Gate Pretection Diode Description: DRAIN CURRENT 640m AMPERES DRAIN SOURCE VOLTAGE 60 VOLTAGE SOURCE 2 The 2N7002K utilized advanced processing techniques to achieve the lowest possible on-resistance,


    Original
    PDF 2N7002K 2N7002K OT-23 21-Nov-06

    2N7002BKS

    Abstract: dual sot363 g1 TRANSISTOR SMD MARKING CODE MOSFET TRANSISTOR SMD MARKING CODE A1 smd transistor marking zt
    Text: 2N7002BKS 60 V, 300 mA dual N-channel Trench MOSFET Rev. 2 — 23 September 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET


    Original
    PDF 2N7002BKS OT363 SC-88) AEC-Q101 2N7002BKS dual sot363 g1 TRANSISTOR SMD MARKING CODE MOSFET TRANSISTOR SMD MARKING CODE A1 smd transistor marking zt

    VP1304N2

    Abstract: TP2540ND VN1304N3 VP3203N3 LND150N8 VN3205N5 VN1310N3 TN2510N8 TN0102N2 VP1306N2
    Text: _ _ fflpSupertex inc. Device Page # Device Page # Device A lp h a n u m e ric Index Page # Device Page# 2N7002 BSS123 DN2535N2 DN2535N3 DN2535N5 20 24 28 28 28 TN2106K1 TN2106N3 TN2124K1 TN2501N8 TN2501ND 57 57 61 63 63 TP2504ND TP2506ND TP2510N8 TP2510ND


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    PDF 2N7002 BSS123 DN2535N2 DN2535N3 DN2535N5 DN2535ND DN2540N2 DN2540N3 DN2540N5 DN2540N8 VP1304N2 TP2540ND VN1304N3 VP3203N3 LND150N8 VN3205N5 VN1310N3 TN2510N8 TN0102N2 VP1306N2

    702 transistor smd

    Abstract: TRANSISTOR SMD MARKING CODE 702 702 TRANSISTOR smd SOT23 transistor 702 F smd TRANSISTOR SMD 702 N 702 N smd transistor 702 y smd TRANSISTOR 702 k TRANSISTOR smd 702 transistor smd code smd transistor marking 702
    Text: Philips Semiconductors Product specification N-channel vertical D-MOS transistor FEATURES 2N7002 QUICK REFERENCE DATA • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown. SYMBOL PARAMETER V ds drain-source voltage Id


    OCR Scan
    PDF 2N7002 702 transistor smd TRANSISTOR SMD MARKING CODE 702 702 TRANSISTOR smd SOT23 transistor 702 F smd TRANSISTOR SMD 702 N 702 N smd transistor 702 y smd TRANSISTOR 702 k TRANSISTOR smd 702 transistor smd code smd transistor marking 702