Untitled
Abstract: No abstract text available
Text: Formosa MS SMD MOSFET 2N7002K1DW List List. 1 Package outline. 2 Features. 2
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2N7002K1DW
500hrs.
MIL-STD-750D
METHOD-1056
1000hrs.
METHOD-1038
METHOD-1031
JESD22-A102
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2N7002K-7
Abstract: 2N7002KQ-7 2N7002K1
Text: 2N7002K N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON max ID max TA = 25°C 2Ω @ VGS = 10V 380mA 3Ω @ VGS = 5V 310mA • • • • • 60V • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant "Green"
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2N7002K
380mA
310mA
AEC-Q101
DS30896
621-2N7002K-7
2N7002K-7
2N7002K-7
2N7002KQ-7
2N7002K1
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Untitled
Abstract: No abstract text available
Text: 2N7002K N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Product Summary Features and Benefits V BR DSS RDS(ON) max 60V 2Ω @ VGS = 10V 3Ω @ VGS = 5V ID max TA = +25°C 380mA 310mA Description • Low On-Resistance Low Input Capacitance Fast Switching Speed
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2N7002K
380mA
310mA
AEC-Q101
DS30896
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SBR20Q100CTP
Abstract: DMN55D DMC2400UV DMS2120LFWB DMN601DWK SBR20A100CT SBR30A50CT SBR10100CTB
Text: DATE: 8 August, 2012 PCN #: 2084 PCN Title: Qualification of Additional Wafer Fabrication Sources Dear Customer: This is an announcement of change s to products that are currently being
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DMC3018LSD-13
DMG4932LSD-13
DMN3031LSS-13
DMN3033LSD-13
DMP3056LDM-7
DMP3056LSS-13
DMC3021LK4-13
DMN3030LSS-13
DMN3033LDM-7
DMN3033LSN-7
SBR20Q100CTP
DMN55D
DMC2400UV
DMS2120LFWB
DMN601DWK
SBR20A100CT
SBR30A50CT
SBR10100CTB
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2n7002k EQUIVALENT
Abstract: No abstract text available
Text: 2N7002K N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON max ID max TA = 25°C 2Ω @ VGS = 10V 380mA 3Ω @ VGS = 5V 310mA • • • • • 60V • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant "Green"
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2N7002K
380mA
310mA
AEC-Q101
DS30896
2n7002k EQUIVALENT
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MARKING C7K
Abstract: 2N7002K-7 2n7002k EQUIVALENT
Text: 2N7002K Green N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits V BR DSS RDS(ON) max 60V 2Ω @ VGS = 10V 3Ω @ VGS = 5V ID max TA = +25°C 380mA 310mA Description • Low On-Resistance • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage
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2N7002K
380mA
310mA
AEC-Q101
DS30896
MARKING C7K
2N7002K-7
2n7002k EQUIVALENT
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Untitled
Abstract: No abstract text available
Text: 2N7002K N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits RDS(ON) max ID max TA = 25°C 2Ω @ VGS = 10V 380mA 3Ω @ VGS = 5V 310mA • • • • • • • Description and Applications Mechanical Data This MOSFET has been designed to minimize the on-state resistance
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2N7002K
380mA
310mA
DS30896
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MARKING C7K
Abstract: 2N7002KQ-13 2N7002K-7
Text: 2N7002K N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON max ID max TA = 25°C 2Ω @ VGS = 10V 380mA 3Ω @ VGS = 5V 310mA • • • • • 60V • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant "Green"
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2N7002K
380mA
310mA
AEC-Q101
DS30896
MARKING C7K
2N7002KQ-13
2N7002K-7
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AP3039AM
Abstract: 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502
Text: Diodes Incorporated RoHS & REACH Compliance Re: End of Vehicle Life Directive EVL 2000/53/EC and Annex II (EVL II) 2000/53/EC Restrictions of Hazardous Substances Directive (RoHS) 2002/95/EC (repealed as from 3 January 2013 but listed here for completeness) & 2011/65/EU (RoHS II)
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2000/53/EC
2000/53/EC
2002/95/EC
2011/65/EU
SOR/2014-254
SJ/T11363-2006
GL-106
AP3039AM
12SN7
AZ1117EH-3
AP3031K
zabg6001
SMBJ11CA
ztx689
DMN33D8L
ap1901
AP3502
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2N7002KQ-13
Abstract: 2N7002KQ-7
Text: 2N7002K Features Mechanical Data • • • • • • • • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant "Green" Device Notes 1 and 2 ESD Protected Up To 2kV
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2N7002K
AEC-Q101
J-STD-020
MIL-STD-202,
DS30896
2N7002KQ-13
2N7002KQ-7
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Untitled
Abstract: No abstract text available
Text: 2N7002K N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits V BR DSS RDS(ON) max 60V 2Ω @ VGS = 10V 3Ω @ VGS = 5V ID max TA = +25°C 380mA 310mA Description • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage
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2N7002K
380mA
310mA
AEC-Q101
DS30896
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702 TRANSISTOR sot-23
Abstract: alpha marking 2N7002 800mA 2N7002K1
Text: 2N7002 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► The Supertex 2N7002 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing
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2N7002
DSFP-2N7002
A021307
702 TRANSISTOR sot-23
alpha marking
2N7002 800mA
2N7002K1
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2N7002KQ-7
Abstract: k7k sot-23 sot-23 Marking k7k 2N7002K-7 2N7002K-2 2N7002K K7K
Text: 2N7002K Features Mechanical Data • • • • • • • • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant "Green" Device Notes 1 and 2 ESD Protected Up To 2kV
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2N7002K
AEC-Q101
OT-23
J-STD-020
MIL-STD-202,
OT-23
DS30896
2N7002KQ-7
k7k sot-23
sot-23 Marking k7k
2N7002K-7
2N7002K-2
2N7002K K7K
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Untitled
Abstract: No abstract text available
Text: 2N7002K N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits V BR DSS RDS(ON) max 60V 2Ω @ VGS = 10V 3Ω @ VGS = 5V ID max TA = +25°C 380mA 310mA • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage
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2N7002K
380mA
310mA
AEC-Q101
DS30896
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