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    Nexperia 2N7002F,215

    MOSFET N-CH 60V 475MA TO236AB
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    2N7002F_2 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N7002F,215 NXP Semiconductors N-channel TrenchMOS FET - Configuration: Single N-channel ; ID DC: 0.475 A; RDS(on): 2000@10V4000@4.5V mOhm; VDSmax: 60 V; Package: SOT23 (TO-236AB); Container: Tape reel smd Original PDF

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    2N7002F

    Abstract: 2N7002F_2
    Text: 2N7002F N-channel TrenchMOS FET Rev. 03 — 28 April 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features • Logic level threshold compatible


    Original
    PDF 2N7002F mbb076 2N7002F 2N7002F_2

    2N7002F

    Abstract: No abstract text available
    Text: 2N7002F N-channel TrenchMOS FET Rev. 02 — 9 May 2005 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features • Logic level threshold compatible


    Original
    PDF 2N7002F mbb076 2N7002F

    2N7002F

    Abstract: No abstract text available
    Text: 2N7002F N-channel TrenchMOS FET Rev. 03 — 28 April 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features • Logic level threshold compatible


    Original
    PDF 2N7002F mbb076 2N7002F 771-2N7002F-T/R

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    Abstract: No abstract text available
    Text: 2N7002F N-channel TrenchMOS FET Rev. 03 — 28 April 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. 1.2 Features • Logic level threshold compatible


    Original
    PDF 2N7002F mbb076 2N7002F