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    BSS123 Price and Stock

    AnBon Semi BSS123

    N-CHANNEL ENHANCEMENT MODE MOSFE
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    DigiKey BSS123 Reel 75,000 3,000
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    onsemi BSS123

    MOSFET N-CH 100V 170MA SOT23-3
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    DigiKey BSS123 Cut Tape 33,551 1
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    BSS123 Digi-Reel 33,551 1
    • 1 $0.22
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    BSS123 Reel 30,000 3,000
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    Avnet Americas BSS123 Reel 42,000 19 Weeks 3,000
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    BSS123 Ammo Pack 17 Weeks, 4 Days 1
    • 1 $0.326
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    • 100 $0.096
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    BSS123 Reel 7 Weeks, 3 Days 6,000
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    BSS123 Ammo Pack 22 Weeks, 4 Days 5
    • 1 $0.414
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    BSS123 Reel 30,000
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    Mouser Electronics BSS123 279,692
    • 1 $0.22
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    Verical BSS123 2,475,000 3,000
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    BSS123 48,000 3,000
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    BSS123 26,741 197
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    Arrow Electronics BSS123 2,475,000 19 Weeks 3,000
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    BSS123 Cut Strips 26,741 19 Weeks 1
    • 1 $0.1439
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    BSS123 1,939 19 Weeks 1
    • 1 $0.1999
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    • 100 $0.0686
    • 1000 $0.06
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    Newark BSS123 Cut Tape 47,966 1
    • 1 $0.232
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    BSS123 Reel 3,000 6,000
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    BSS123 Cut Tape 122 1
    • 1 $0.414
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    • 100 $0.134
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    Future Electronics BSS123 Reel 7,656,000 21 Weeks 3,000
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    BSS123 Reel 2,016,000 21 Weeks 3,000
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    BSS123 Reel 21 Weeks 30,000
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    Onlinecomponents.com BSS123 48,000
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    Bristol Electronics BSS123 15,307
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    Quest Components BSS123 9,600
    • 1 $0.31
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    • 1000 $0.093
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    BSS123 1,870
    • 1 $0.124
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    BSS123 1,067
    • 1 $0.15
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    • 100 $0.075
    • 1000 $0.045
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    Rochester Electronics BSS123 587,475 1
    • 1 $0.045
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    • 100 $0.0423
    • 1000 $0.0383
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    TME BSS123 2,245 1
    • 1 $0.1993
    • 10 $0.1305
    • 100 $0.0695
    • 1000 $0.0603
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    Ameya Holding Limited BSS123 94,933
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    Avnet Asia BSS123 3,000 19 Weeks 15,000
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    Avnet Silica BSS123 20 Weeks 3,000
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    EBV Elektronik BSS123 555,000 21 Weeks 3,000
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    Master Electronics BSS123 48,000
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    New Advantage Corporation BSS123 8,721,000 1
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    Suzhou Good-Ark Electronics Co Ltd BSS123

    MOSFET, N-CH, SINGLE, 0.19A, 100
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BSS123 Cut Tape 15,505 1
    • 1 $0.17
    • 10 $0.104
    • 100 $0.0641
    • 1000 $0.04098
    • 10000 $0.04098
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    BSS123 Digi-Reel 15,505 1
    • 1 $0.17
    • 10 $0.104
    • 100 $0.0641
    • 1000 $0.04098
    • 10000 $0.04098
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    BSS123 Reel 15,000 3,000
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    Diodes Incorporated BSS123Q-7

    2N7002 FAMILY SOT23 T&R 3K
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    DigiKey BSS123Q-7 Cut Tape 4,810 1
    • 1 $0.15
    • 10 $0.101
    • 100 $0.15
    • 1000 $0.04615
    • 10000 $0.04615
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    TME BSS123Q-7 3,050 10
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    • 10 $0.0917
    • 100 $0.0377
    • 1000 $0.0333
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    Avnet Asia BSS123Q-7 8 Weeks 12,000
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    Avnet Silica BSS123Q-7 10 Weeks 3,000
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    Nextgen Components BSS123

    MOSFET N-CH 100V 0.2A SOT23
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BSS123 Reel 6,000
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    BSS123 Datasheets (106)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BSS123 Diodes Incorporated N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Original PDF
    BSS123 Diodes Incorporated N-CHANNEL ENHANCEMENT MODE MOSFET Original PDF
    BSS123 Fairchild Semiconductor TRANS MOSFET N-CH 100V 0.17A 3SOT-23 T/R Original PDF
    BSS123 Fairchild Semiconductor N-Channel Logic Level Enhancement Mode Field Effect Transistor Original PDF
    BSS123 Fairchild Semiconductor N-Channel Logic Level Enhancement Mode Field Effect Transistor Original PDF
    BSS123 Fairchild Semiconductor N-Channel Logic Level Enhancement Mode Field Effect Transistor Original PDF
    BSS123 Infineon Technologies SIPMOS Small-Signal Transistor Original PDF
    BSS123 Infineon Technologies N-Channel Small Signal MOSFETs (20V - 800V); Package: PG-SOT23-3; Package: SOT-23; VDS (max): 100.0 V; RDS (on) (max) (@10V): 6,000.0 mOhm; RDS (on) (max) (@4.5V): 10,000.0 mOhm; RDS (on) (max) (@2.5V): -; Original PDF
    BSS123 Philips Semiconductors N-Channel Logic Level Enhancement Mode Field Effect Transistor Original PDF
    BSS123 Philips Semiconductors N-Channel Enhancement Mode Vertical D-MOS Transistor Original PDF
    BSS123 Siemens SIPMOS Small-Signal Transistor Original PDF
    BSS123 Siemens SIPMOS Small-Signal Transistor Original PDF
    BSS123 Siemens Original PDF
    BSS123 Siemens SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level) Original PDF
    BSS123 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    BSS123 Weitron Power MOSFET N-Channel Original PDF
    BSS123 Zetex Semiconductors SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET Original PDF
    BSS123 Calogic N-Channel Enhancement Mode Vertical DMOS FET Scan PDF
    BSS123 Motorola Switchmode Datasheet Scan PDF
    BSS123 Unknown Semiconductor Master Cross Reference Guide Scan PDF

    BSS123 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BSS123LT1G

    Abstract: No abstract text available
    Text: BSS123LT1G, BVSS123LT1G Power MOSFET 170 mAmps, 100 Volts N−Channel SOT−23 http://onsemi.com 170 mAMPS 100 VOLTS RDS on = 6 W Features • AEC−Q101 Qualified and PPAP Capable − BVSS123LT1G • These Devices are Pb−Free and are RoHS Compliant N−Channel


    Original
    PDF BSS123LT1G, BVSS123LT1G OT-23 AEC-Q101 BVSS123LT1G BSS123LT1/D BSS123LT1G

    BSS123W-7-F

    Abstract: BSS123W BSS123W-7 J-STD-020A
    Text: BSS123W N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT SPICE MODELS: BSS123W Features • · · · · · Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage High Drain-Source Voltage Rating Also Available in Lead Free Version


    Original
    PDF BSS123W OT-323 OT-323, J-STD-020A MIL-STD-202, com/datasheets/ap02007 BSS123W-7-F. DS30368 BSS123W-7-F BSS123W BSS123W-7 J-STD-020A

    BSS123

    Abstract: SAs sot23 BSS123 L6433 L6327 PG-SOT23 PG-SOT-23
    Text: BSS123 Rev. 1.41 SIPMOS Small-Signal-Transistor Feature Product Summary • N-Channel VDS • Enhancement mode RDS on • Logic Level ID • dv/dt rated 100 V 6 Ω 0.17 A PG-SOT23 3 Drain pin 3 • Qualified according to AEC Q101 Gate pin1 2 Source pin 2


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    PDF BSS123 PG-SOT23 VPS05161 L6327: L6433: BSS123 SAs sot23 BSS123 L6433 L6327 PG-SOT23 PG-SOT-23

    DS30366

    Abstract: K23 SOT23 BSS123 BSS123-7-F BSS123A BSS123 spice
    Text: SPICE MODEL: BSS123 BSS123 NEW PRODUCT N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · · Low Gate Threshold Voltage SOT-23 Low Input Capacitance Min Max A 0.37 0.51 B 1.20 1.40 C 2.30 2.50 D 0.89 1.03 G E 0.45 0.60 H G 1.78 2.05


    Original
    PDF BSS123 OT-23 DS30366 K23 SOT23 BSS123 BSS123-7-F BSS123A BSS123 spice

    SOT-23 marking 717

    Abstract: SAP SOT23 sot-23 MARKING CODE 718
    Text: BSS123 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) Order Number / Package Product marking for TO-236AB: TO-236AB* SA❋ 100V 6.0Ω 0.5A BSS123 where ❋ = 2-week alpha date code *Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.


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    PDF BSS123 O-236AB: O-236AB* OT-23. SOT-23 marking 717 SAP SOT23 sot-23 MARKING CODE 718

    BSS123W

    Abstract: BSS123W-7 J-STD-020A
    Text: BSS123W NEW PRODUCT N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage High Drain-Source Voltage Rating · · · · · Dim Min Max A 0.25


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    PDF BSS123W OT-323, J-STD-020A MIL-STD-202, BSS123W-7 OT-323 3000/Tape com/datasheets/ap02007 DS30368 BSS123W BSS123W-7 J-STD-020A

    BSS123Q-13

    Abstract: DS30366 bss123 c23 K23 SOT23 K23 mOSFET BSS123Q-7
    Text: BSS123 N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits V BR DSS RDS(ON) ID TA = 25°C 100V 6.0Ω @ VGS = 10V 0.17 • • • • • • • Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage High Drain-Source Voltage Rating


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    PDF BSS123 DS30366 BSS123Q-13 bss123 c23 K23 SOT23 K23 mOSFET BSS123Q-7

    marking code SA sot-23

    Abstract: SOT-23 marking sa BSS123LT1 DIODE 8V SOT-23 SOT-23 9v
    Text: BSS123LT1 Preferred Device Power MOSFET 170 mAmps, 100 Volts N−Channel SOT−23 MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDSS 100 Vdc Gate−Source Voltage − Continuous − Non−repetitive tp ≤ 50 µs VGS VGSM ± 20 ± 40 Vdc


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    PDF BSS123LT1 OT-23 marking code SA sot-23 SOT-23 marking sa BSS123LT1 DIODE 8V SOT-23 SOT-23 9v

    SOT23 K23

    Abstract: K23 SOT23 MARKING
    Text: BSS123 NEW PRODUCT N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage High Drain-Source Voltage Rating SOT-23 Max 0.37 0.51 B 1.20 1.40 C


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    PDF BSS123 OT-23 OT-23, J-STD-020A MIL-STD-202, BSS123-7 3000/Tape com/datasheets/ap02007 DS30366 SOT23 K23 K23 SOT23 MARKING

    Untitled

    Abstract: No abstract text available
    Text: BSS123 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT SPICE MODEL: BSS123 Features • · · · · Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage High Drain-Source Voltage Rating SOT-23 A · ·


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    PDF BSS123 OT-23 OT-23, J-STD-020A MIL-STD-202, BSS123-7 3000/Tape com/datasheets/ap02007

    BSS123W

    Abstract: BSS123W-7-F
    Text: SPICE MODELS: BSS123W BSS123W Lead-free Green NEW PRODUCT N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · · · · Low Gate Threshold Voltage SOT-323 A Low Input Capacitance D Fast Switching Speed Low Input/Output Leakage B C High Drain-Source Voltage Rating


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    PDF BSS123W OT-323 AEC-Q101 J-STD-020C DS30368 BSS123W BSS123W-7-F

    FDC6331

    Abstract: fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305
    Text: Discrete Temperature range Software version Revision date 2N7002 SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A 2N7002MTF SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A BS170 TO-92-3 Electrical 25°C to 125°C Orcad 9.1 Mar 22, 2002 BSS123 SOT-23-3


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    PDF 2N7002 2N7002MTF BS170 BSS123 BSS138 BSS84 FDB045AN08A0 FDB2532 FDB3632 FDB3652 FDC6331 fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305

    K23 mOSFET

    Abstract: No abstract text available
    Text: BSS123 N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits V BR DSS RDS(ON) ID TA = 25°C 100V 6.0Ω @ VGS = 10V 0.17 • • • • • • • Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage High Drain-Source Voltage Rating


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    PDF BSS123 DS30366 K23 mOSFET

    BSS123Q-7-F

    Abstract: MARKING CODE 028a sot 23
    Text: BSS123 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR ADVANCE INFORMATION Product Summary Features and Benefits V BR DSS RDS(ON) ID TA = 25°C 100V 6.0Ω @ VGS = 10V 0.17 • • • • • • • Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed


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    PDF BSS123 DS30366 BSS123Q-7-F MARKING CODE 028a sot 23

    Untitled

    Abstract: No abstract text available
    Text: BSS123 Power MOSFET N-Channel 3 DRAIN * “G” Lead Pb -Free Features: *Low On-Resistance : 6.0 Ω *Low Input Capacitance: 20PF *Low Out put Capacitance : 9PF *Low Threshole :2.8V *Fast Switching Speed : 20ns SOT-23 3 1 GATE 1 2 2 SOURCE Application: * DC to DC Converter


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    PDF BSS123 OT-23 200mA

    20PF

    Abstract: BSS123 bss123 marking
    Text: BSS123 Power MOSFET N-Channel 3 DRAIN SOT-23 Features: *Low On-Resistance : 6.0 Ω *Low Input Capacitance: 20PF *Low Out put Capacitance : 9PF *Low Threshole :2.8V *Fast Switching Speed : 20ns 3 1 GATE 1 2 2 SOURCE Application: * DC to DC Converter * Cellular & PCMCIA Card


    Original
    PDF BSS123 OT-23 200mA 20PF BSS123 bss123 marking

    BSS123

    Abstract: BSS123-7 J-STD-020A K23 SOT23 MARKING transistor bss123
    Text: BSS123 NEW PRODUCT N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage High Drain-Source Voltage Rating SOT-23 A · · · · Min Max A 0.37


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    PDF BSS123 OT-23 OT-23, J-STD-020A MIL-STD-202, BSS123-7 3000/Tape com/datasheets/ap02007 DS30366 BSS123 BSS123-7 J-STD-020A K23 SOT23 MARKING transistor bss123

    TR40-10

    Abstract: SA SOT-23 MARKING CODE 028a sot 23 Q62702-SS12
    Text: BEE D • û23b32G 0017155 5 « S I P SIPMOS N Channel MOSFET SIEMEN S/ SPCL-, SEMICONDS t * " 3 S *- 2S " BSS123 _ ~_ • SIPMOS - enhancement mode • Draln-source voltage Vf>« = 100V • Continuous drain current I o - 0.17A • Draln-source on-reslstance


    OCR Scan
    PDF 23b32G BSS123 Q62702-SS12 OQ171bO TR40-10 SA SOT-23 MARKING CODE 028a sot 23 Q62702-SS12

    VP1304N2

    Abstract: TP2540ND VN1304N3 VP3203N3 LND150N8 VN3205N5 VN1310N3 TN2510N8 TN0102N2 VP1306N2
    Text: _ _ fflpSupertex inc. Device Page # Device Page # Device A lp h a n u m e ric Index Page # Device Page# 2N7002 BSS123 DN2535N2 DN2535N3 DN2535N5 20 24 28 28 28 TN2106K1 TN2106N3 TN2124K1 TN2501N8 TN2501ND 57 57 61 63 63 TP2504ND TP2506ND TP2510N8 TP2510ND


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    PDF 2N7002 BSS123 DN2535N2 DN2535N3 DN2535N5 DN2535ND DN2540N2 DN2540N3 DN2540N5 DN2540N8 VP1304N2 TP2540ND VN1304N3 VP3203N3 LND150N8 VN3205N5 VN1310N3 TN2510N8 TN0102N2 VP1306N2

    Untitled

    Abstract: No abstract text available
    Text: BSS123LT1* CASE 318-07, STYLE 21 SOT-23 TO-236AB M AXIM UM RATINGS Rating D r a in - S o u r c e V o lta g e G a t e - S o u r c e V o lta g e Symbol Value Unit VDSS 100 Vdc s r 35 Vdc 'd m 0 .1 7 0 .6 8 Sym bol Max Pd 225 mW 1.8 m W -'C r w a 556 c w T j . T s tq


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    PDF BSS123LT1* OT-23 O-236AB)

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor BSS123LT1 N -C h an n el 3 DRAIN Motorola Preferred Device % 2 SOURCE 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Drain-Source Voltage VDSS 100 Vdc G ate-Source Voltage — Continuous — N on-repetitive tp < 50 ^s


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    PDF BSS123LT1 OT-23 O-236AB)

    C086

    Abstract: f 0472 N-Channel MOSFET
    Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA BSS123 Advance Information S m all-S ig n al Field E ffe c t T ran sisto r N-Channel Enhancement-Mode Silicon Gate TMOS N -C H A N N E L S M A L L -S IG N A L T M O S FET rD S o n l = 6 O H M S 100 V O L T S This TM O S FET is designed fo r h ig h -vo ltag e , h ig h ­


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    PDF BSS123 OT-23 O-236AA) C0034 C086 f 0472 N-Channel MOSFET

    transistor 45 f 123

    Abstract: No abstract text available
    Text: c m p r M - iii n SEM IC ONDUCTO R September 1996 tm BSS100 / BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary,


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    PDF BSS100 BSS123 BSS100: BSS123: BSS123 transistor 45 f 123

    SOT-23 Product Code bss123

    Abstract: DSS SOT23 marking 9a sot-23
    Text: ^ B S S 1 23 Supertex ine. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices BVdgs R dS ON (max) îf b v dss/ 100V 6£2 0.5A Product marking for SOT-23: Order Number / Package SOT-23 SA* BSS123 where * = 2-week alpha date code


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    PDF OT-23 BSS123 OT-23: SOT-23 Product Code bss123 DSS SOT23 marking 9a sot-23