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    BSS100 Price and Stock

    Essentra Components CBSS-10-01

    BRD SPT REST MNT SNAP LOCK 14MM
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    DigiKey CBSS-10-01 Bulk 492 1
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    Mouser Electronics CBSS-10-01 1,921
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    onsemi BSS100

    MOSFET N-CH 100V 220MA TO92-3
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    Samtec Inc BSS-100-01-L-D

    CONN SOCKET 200POS SMD GOLD
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    DigiKey BSS-100-01-L-D Tube 8
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    Samtec Inc BSS-100-01-L-D-A

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    Avnet Americas BSS-100-01-L-D-A Tube 1
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    Verical BSS-100-01-L-D-A 221 1
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    Newark BSS-100-01-L-D-A Bulk 1
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    Sager BSS-100-01-L-D-A 221 1
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    Samtec Inc BSS-100-01-F-D-A

    CONN SOCKET 200POS SMD GOLD
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    DigiKey BSS-100-01-F-D-A Tube 8
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    Mouser Electronics BSS-100-01-F-D-A
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    Newark BSS-100-01-F-D-A Bulk 1
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    Samtec BSS-100-01-F-D-A Tube 2 Weeks, 4 Days 1
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    BSS100 Datasheets (19)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BSS100 Fairchild Semiconductor N-Channel Logic Level Enhancement Mode Field Effect Transistor Original PDF
    BSS100 Fairchild Semiconductor N-Channel Logic Level Enhancement Mode Field Effect Transistor Original PDF
    BSS100 Fairchild Semiconductor N-Channel Logic Level Enhancement Mode Field Effect Transistor Original PDF
    BSS100 Philips Semiconductors N-Channel Enhancement Mode Vertical D-MOS Transistor Original PDF
    BSS100 Siemens Original PDF
    BSS100 Siemens SIPMOS Small-Signal Transistor Original PDF
    BSS100 Siemens SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level) Original PDF
    BSS100 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    BSS100 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    BSS100 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BSS100 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BSS100 Unknown FET Data Book Scan PDF
    BSS100 National Semiconductor N-Channel Logic Level Enhancement Mode Field Effect Transistor Scan PDF
    BSS100 Philips Semiconductors N-Channel Enhancement Mode Vertical D-MOS Transistor Scan PDF
    BSS100AMO Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    BSS100E6288 Infineon Technologies N-Channel SIPMOS Small-Signal Transistor Original PDF
    BSS100E6296 Infineon Technologies N-Channel SIPMOS Small-Signal Transistor Original PDF
    BSS100E6325 Infineon Technologies N-Channel SIPMOS Small-Signal Transistor Original PDF
    BSS100L Calogic N-Channel Enhancement Mode Vertical DMOS FET Scan PDF

    BSS100 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BSS100

    Abstract: transistor P1 P bSS100 TRANSISTOR DATASHEET bss100 transistor BSS100 TO-92 F1 SOT23 BSS100 equivalent BSS123 transistor bss123
    Text: September 1996 BSS100 / BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This


    Original     		PDF BSS100 BSS123 BSS100: BSS123: transistor P1 P bSS100 TRANSISTOR DATASHEET bss100 transistor BSS100 TO-92 F1 SOT23 BSS100 equivalent BSS123 transistor bss123

    BSS100

    Abstract: bss123 CBVK741B019 F63TNR PN2222N BSS100 TO-92
    Text: September 1996 BSS100 / BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This


    Original     		PDF BSS100 BSS123 BSS100: BSS123: bss123 CBVK741B019 F63TNR PN2222N BSS100 TO-92

    BSS123

    Abstract: BSS100 equivalent BSS100 bss100 transistor
    Text: September 1996 BSS100 / BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features BSS100: 0.22A, 100V. RDS ON = 6Ω @ VGS = 10V. BSS123: 0.17A, 100V. RDS(ON) = 6Ω @ VGS = 10V These N-Channel logic level enhancement mode power field


    Original     		PDF BSS100 BSS123 BSS100: BSS123: BSS123 BSS100 equivalent bss100 transistor

    VPS05163

    Abstract: BSS100 GPS05560 Q67060-S6084-A101
    Text: BTS 4140 N Smart High-Side Power Switch One Channel: 1 x 1Ω Features Product Summary • Current controlled input Overvoltage protection Vbbin AZ • Short circuit protection Operating voltage Vbb(on) • Current limitation On-state resistance RON 62 V


    Original     		PDF OT-223 VPS05163 VPS05163 BSS100 GPS05560 Q67060-S6084-A101

    SP2083

    Abstract: ST72F344 ST72F521 74FCT 74HCT AN1179 ST662A ST72344 ST72F264 74HC40103
    Text: ST7 FAMILY ICC Protocol REFERENCE MANUAL April 2003 1 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED. STMicroelectronics PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF


    Original     		PDF

    k2645

    Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
    Text: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt


    Original     		PDF MK135 MK136 MK137 MK138 MK139 MK140 Mk142 MK145 MK155 157kr k2645 k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417

    INFINEON BSS100

    Abstract: BTS4140
    Text: BTS 4140 N Smart High-Side Power Switch One Channel: 1 x 1W Features Product Summary • Current controlled input Overvoltage protection Vbbin AZ · Short circuit protection Operating voltage Vbb(on) · Current limitation On-state resistance RON 62 V 4.9.60 V


    Original     		PDF

    mosfet cross reference

    Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
    Text: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is


    Original     		PDF T0-92 options4206A ZVN4206C ZVN4206E ZVN4306A TN2106K1 VN2210N3 TN0606N3 TN0606N6 mosfet cross reference pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode

    mosfet cross reference

    Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L
    Text: Discrete POWER & Signal Technologies MOSFET Cross Reference Guide Industry Recommended Part Number Fairchild Device Package Industry Recommended Part Number Fairchild Device 2N7000 2N7000 TO-92, N IRF7203 FDS9435A 2N7002 2N7002 SOT-23, N IRF7204 NDS8434A SO-8, P


    Original     		PDF 2N7000 IRF7203 FDS9435A 2N7002 OT-23, IRF7204 NDS8434A BS170 mosfet cross reference SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    BSS100

    Abstract: GPS05560 Q67060-S6084-A101 VPS05163 DIN6784
    Text: BTS 4140 N Smart High-Side Power Switch One Channel: 1 x 1Ω Features Product Summary • Current controlled input Overvoltage protection Vbbin AZ • Short circuit protection Operating voltage Vbb(on) • Current limitation On-state resistance RON 62 V


    Original     		PDF OT-223 VPS05163 2003-Oct-01 BSS100 GPS05560 Q67060-S6084-A101 VPS05163 DIN6784

    transistor 45 f 123

    Abstract: No abstract text available
    Text: c m p r M - iii n SEM IC ONDUCTO R September 1996 tm BSS100 / BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary,


    OCR Scan     		PDF BSS100 BSS123 BSS100: BSS123: BSS123 transistor 45 f 123

    Untitled

    Abstract: No abstract text available
    Text: N-Channel Enhancement Mode Vertical DMOS FET caloric CORPORATION BSS100L/BSS123 FEATURES • • • • • • • Compact Geometry Fast Switching Speeds No Secondary Breakdown Excellent Temperature Stability High Input Impedance Low Current Drive Ease of Paralleling


    OCR Scan     		PDF BSS100L/BSS123 BSS123 BSS100L XBSS123 OT-23 100mA, 100mA 280mA 300ns.

    TAG 92 transistor

    Abstract: philips transformer 524 BSS100 BSS100 TO92 BTB 134
    Text: 711Gû2ti 00tj7BflH Ô15 M P H I N Philips Semiconductors Data sheet status Product specification date of issue November 1990 FEATURES • BSS100 N-channel enhancement mode vertical D-MOS transistor Q U IC K REFERENCE DATA Direct interface to C-MOS, TTL, etc.


    OCR Scan     		PDF 00b7Bfl4 BSS100 7110flEb Vdd-60V 7Z88773 TAG 92 transistor philips transformer 524 BSS100 BSS100 TO92 BTB 134

    B55123

    Abstract: bss123 marking BSS123 BSS100L XBSS123 125C-2
    Text: N-Channel Enhancement Mode Vertical DMOS FET BSS100L /BSS123 FEATURES • • • • • • • Compact Geometry Fast Switching Speeds No Secondary Breakdown Excellent Temperature Stability High Input Impedance Low C urrent Drive Ease of Paralleling APPLICATIONS


    OCR Scan     		PDF BSS100L/BSS123 BSS123 OT-23 BSS100L XBSS123 BSS100L 100mA, B55123 bss123 marking 125C-2

    bss100 transistor

    Abstract: BSS100 PINNING-TO-92 JZSS773
    Text: Philips C o m po nents Data sheet status P ro d u c t sp e cific a tio n data of issue N ov em b er 1990 FEATURES BSS100 N-channel enhancement mode vertical D-MOS transistor Q U IC K R E F E R E N C E DATA • Direct interface to C-M O S, TTL, etc. SYM BOL


    OCR Scan     		PDF BSS100 PINNING-TO-92 JZSS773 003bl57 LL53S31 003bl2fi bss100 transistor BSS100

    BSS123

    Abstract: BSS100L XBSS123
    Text: calocfic N-Channel Enhancement Mode Vertical DMOS FET CORPORATION BSS100L /BSS123 FEATURES • • • • • • • Compact Geometry Fast Switching Speeds No Secondary Breakdown Excellent Temperature Stability High Input Impedance Low Current Drive Ease of Paralleling


    OCR Scan     		PDF BSS100L BSS123 OT-23 XBSS123 100mA, 100mA 280mA

    BSS123

    Abstract: BSS100 transistor BJ 017 bss100 transistor BSS100 TO92 BS8123 BSS100 TO-92 BSS10 bss123 transistor
    Text: i |_ | I q Septem ber 1996 S E M IC O N D U C T O R tm BSS100 / BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor G eneral Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild’s proprietary,


    OCR Scan     		PDF BSS100 BSS123 BSS100: BSS123: BSS123 transistor BJ 017 bss100 transistor BSS100 TO92 BS8123 BSS100 TO-92 BSS10 bss123 transistor

    BSP87

    Abstract: bsp296 l BSS125 bss149 to92d
    Text: SIPMOS For complete package outlines, refer to pages PO-1 through PO-6 Low Power MOSFETs Type Characteristics T( =25°C M axim um Ratings N = N Channel P = P Channel V BS107 BS170 BSS88 BSS89 BSS91 BSS92 BSS98 BSS100 BSSlOl BSSUO BSS124 BSS125 BSS129 BSS135


    OCR Scan     		PDF BS107 BS170 BSS88 BSS89 BSS91 BSS92 BSS98 BSS100 BSS124 BSS125 BSP87 bsp296 l bss149 to92d

    BSS123

    Abstract: BSS100 85S100 TRANSISTOR BSS123 K5011
    Text: tu N ational Semiconductor" J u ly 1996 BSS100 / BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Nationals proprietary, high cell density, DMOS


    OCR Scan     		PDF BSS100 BSS123 BSS100: BSS123: k501130 BSS123 bS0113D 85S100 TRANSISTOR BSS123 K5011

    Untitled

    Abstract: No abstract text available
    Text: Philips Components D a ta s h e e t s ta tu s P ro d u ct sp ecification d a te o f is s u e N o v em b e r 1 990 FEATURES • BSS100 N-channel enhancement mode vertical D-MOS transistor Q U IC K R E F E R E N C E DATA Direct interface to C-M O S, TTL, etc.


    OCR Scan     		PDF BSS100 003bl2b 0Q3bl37 D03fcil2fl

    BSS97

    Abstract: 2SK564 BSS95 J3303 2SK616 buz349 2SK562 BUZ350 BSS98 BSS101
    Text: SÉ*G siPMos«npicjnz., mííMüs-FET07r>ígíA a^\ iz)i,ammitâumæ£xyi&ÿi<D 4 IS H « ® *S S It« « A r5 *lC « fc O , r|])ALM aS-s±yV°9-M OS-FET^Z:'íífflU/c/-c j-^-ro jt* i= • e t ^ v ís ía •Z'fy+yymm m • M u ffig •-tzJb^ftCD/JvM-íb


    OCR Scan     		PDF BSS110 BSS98 BUZ71L T0220 BUZ71 BUZ10 BUZ11A BSS97 2SK564 BSS95 J3303 2SK616 buz349 2SK562 BUZ350 BSS101

    BSS87

    Abstract: BSP315 SOT223 BSP171 BSS125
    Text: SIPMOS For complete package outlines, refer to pages PO-1 through PO-6 Low Power MOSFETs Type M axim um Ratings N = N Channel P = P Channel BSP17 BSP88 BSP89 BSP92 BSP 125 BSP129* BSP135* BSP149* BSP171 BSP295 BSP296 BSP297 BSP298 BSP299 BSP315 BSP316 BSP317


    OCR Scan     		PDF BSP17 BSP88 BSP89 BSP92 BSP129* BSP135* BSP149* BSP171 BSP295 BSP296 BSS87 BSP315 SOT223 BSS125

    S498

    Abstract: BSS97 BSS95 BSS125 siemens 230 92 BSS 130 BSS 97 s484 S458 BSS components
    Text: <IENENS AKTIEN6ESELLSCHAF 03E D • 023SbOS 001Sb37 4 BISIE6 T^£7~2S' Kleinsignaltransistoren Small-Signal Transistors N-Kanal Anreicherungstypen N channel enhancem ent types K S max) V ti(max) rriA ft P,ot mW G ehäuse P ackage SBS SCS Bestellnummer Ordering co d e


    OCR Scan     		PDF 023SbOS lSb37 Q62702- BSS981' BSS1381Â OT-23 BSS3951Â O-202 BSS100 BSS123 S498 BSS97 BSS95 BSS125 siemens 230 92 BSS 130 BSS 97 s484 S458 BSS components