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Diodes Incorporated BS107PSTZ MOSFET N-CH 200V 120MA E-LINE
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BS107PSTZ	Cut Tape	3,964		1	1 $1.02 10 $0.688 100 $1.02 1000 $0.34996 10000 $0.34996	Buy Now
	BS107PSTZ	Ammo Pack	2,000		2,000	1 - 10 - 100 - 1000 - 10000 $0.30188	Buy Now
Mouser Electronics	BS107PSTZ		3,059			1 $0.89 10 $0.688 100 $0.477 1000 $0.35 10000 $0.301	Buy Now
Newark	BS107PSTZ	Cut Tape	1,330		1	1 $0.926 10 $0.8 100 $0.553 1000 $0.393 10000 $0.393	Buy Now
TME	BS107PSTZ		1,688		1	1 $0.809 10 $0.702 100 $0.485 1000 $0.338 10000 $0.307	Buy Now
Avnet Silica	BS107PSTZ			10 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Diodes Incorporated BS107P MOSFET N-CH 200V 120MA TO92-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BS107P	Bulk	114		1	1 $0.77 10 $0.517 100 $0.77 1000 $0.25722 10000 $0.20888	Buy Now
Mouser Electronics	BS107P		7,814			1 $0.71 10 $0.517 100 $0.356 1000 $0.298 10000 $0.296	Buy Now
Arrow Electronics	BS107P		1,145	40 Weeks	285	1 - 10 - 100 - 1000 $0.2677 10000 $0.2677	Buy Now
	BS107P		5	36 Weeks	1	1 - 10 $0.5007 100 $0.3509 1000 $0.2556 10000 $0.2082	Buy Now
Newark	BS107P	Cut Tape	1,628		1	1 $0.701 10 $0.615 100 $0.451 1000 $0.383 10000 $0.383	Buy Now
TME	BS107P		2,297		1	1 $0.838 10 $0.563 100 $0.406 1000 $0.379 10000 $0.379	Buy Now

Avnet Silica	BS107P			42 Weeks	4,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
ES Components	BS107P					1 - 10 - 100 - 1000 - 10000 -	Get Quote
Samtec Inc BBS-107-T-B CONN HEADER VERT 7POS 2.54MM Free Sample
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BBS-107-T-B	Tube	54		1	1 $2.71 10 $2.071 100 $2.71 1000 $1.25288 10000 $1.07113	Buy Now
Mouser Electronics	BBS-107-T-B		193			1 $1.98 10 $1.98 100 $1.54 1000 $1.06 10000 $0.67	Buy Now
Samtec Inc BBS-107-G-A CONN HEADER VERT 7POS 2.54MM Free Sample
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BBS-107-G-A	Bulk	25		1	1 $4.4 10 $3.587 100 $4.4 1000 $2.38989 10000 $2.38989	Buy Now
Avnet Americas	BBS-107-G-A	Tube		1 Weeks	1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	BBS-107-G-A					1 $3.74 10 $3.74 100 $3.05 1000 $2.3 10000 $1.45	Get Quote
Newark	BBS-107-G-A	Bulk			1	1 $3.68 10 $3.51 100 $2.95 1000 $2.12 10000 $1.91	Buy Now
Powell Electronics	BBS-107-G-A		196		1	1 $3.74 10 $3.74 100 $2.59 1000 $1.88 10000 $1.88	Buy Now

Avnet Abacus	BBS-107-G-A			3 Weeks	1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Master Electronics	BBS-107-G-A					1 - 10 - 100 $2.95 1000 $2.61 10000 $1.47	Buy Now
Sager	BBS-107-G-A		297		1	1 $3.74 10 $3.74 100 $2.59 1000 $1.88 10000 $1.74	Buy Now
onsemi BS107AG MOSFET N-CH 200V 250MA TO92-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BS107AG	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now

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BS107 Datasheets (97)

Part	Manufacturer	Description	Datasheet Type	PDF
BS107	Diodes Incorporated	N-CHANNEL ENHANCEMENT MODE TRANSISTOR	Original	PDF
BS107	Infineon Technologies	TRANS MOSFET N-CH 200V 0.13A 3TO-92	Original	PDF
BS107	Motorola	TMOS Switching(N-Channel-Enhancement)	Original	PDF
BS107	On Semiconductor	Small Signal MOSFET 250 mAmps, 200 Volts	Original	PDF
BS107	On Semiconductor	Small Signal MOSFET 250 mAmps, 200 Volts	Original	PDF
BS107	On Semiconductor	Small Signal MOSFET 250 mAmps, 200 Volts	Original	PDF
BS107	On Semiconductor	Small Signal MOSFET 250 mAmps, 200 Volts	Original	PDF
BS107	Philips Semiconductors	N-Channel Enhancement Mode Vertical D-MOS Transistor	Original	PDF
BS107	Philips Semiconductors	UHF power transistor	Original	PDF
BS107	Philips Semiconductors	N-Channel Enhancement Mode Vertical D-MOS Transistor	Original	PDF
BS107	Siemens	SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level)	Original	PDF
BS107	Siemens		Original	PDF
BS107	Siliconix	N-Channel Enhancement-Mode MOSFET Transistors	Original	PDF
BS107	Temic Semiconductors	N-channel Enhancement-mode Mos Transistors	Original	PDF

BS107	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
BS107	Vishay Telefunken	TRANS MOSFET N-CH 200V 0.12A 3TO-92-18RM	Original	PDF
BS107	ITT Semiconductors	VMOS Transistor	Scan	PDF
BS107	Motorola	Switchmode Datasheet	Scan	PDF
BS107	Motorola	European Master Selection Guide 1986	Scan	PDF
BS107	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF

BS107 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
BS107 Abstract: BS107A BS107AG BS107ARL1 BS107ARLRM BS107ARLRP BS107G BS107RL1 BS107RLRA Text: BS107, BS107A Preferred Device Small Signal MOSFET 250 mAmps, 200 Volts N−Channel TO−92 Features http://onsemi.com • Pb−Free Package is Available* 250 mA, 200 V RDS on = 14 W (BS107) RDS(on) = 6.4 W (BS107A) N−Channel MAXIMUM RATINGS Rating Drain −Source Voltage	Original	PDF	BS107, BS107A BS107) BS107A) BS107/D BS107 BS107A BS107AG BS107ARL1 BS107ARLRM BS107ARLRP BS107G BS107RL1 BS107RLRA
vishay siliconix code marking Abstract: TN2404KL-TR1-E3 TO-92-18RM BS107KL TN2404K BS107KL-TR1 TN2404KL TN2404KL-TR1 TN2404K-T1 TN2404K-T1-E3 Text: TN2404K/TN2404KL/BS107KL Vishay Siliconix N-Channel 240 -V D-S MOSFET PRODUCT SUMMARY Part Number VDS Min (V) TN2404K 240 TN2404KL/BS107KL FEATURES D D D D D rDS(on) (W) VGS(th) (V) ID (A) 4 @ VGS = 10 V 0.8 to 2.0 0.2 4 @ VGS = 10 V 0.8 to 2.0 0.3 BENEFITS	Original	PDF	TN2404K/TN2404KL/BS107KL TN2404K TN2404KL/BS107KL O-226AA O-92-18RM 08-Apr-05 vishay siliconix code marking TN2404KL-TR1-E3 TO-92-18RM BS107KL TN2404K BS107KL-TR1 TN2404KL TN2404KL-TR1 TN2404K-T1 TN2404K-T1-E3
equivalent of BS107 Abstract: BS107 VN2010L BS107 application Text: VN2010L/BS107 Vishay Siliconix N-Channel 200-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 10 @ VGS = 4.5 V 0.8 to 1.8 0.19 28 @ VGS = 2.8 V 0.8 to 3 0.12 VN2010L 200 BS107 D D D D D Low On-Resistance: 6 W	Original	PDF	VN2010L/BS107 VN2010L BS107 O-226AA O-92-18RM 18-Jul-08 equivalent of BS107 BS107 VN2010L BS107 application
Untitled Abstract: No abstract text available Text: TN2404K/TN2404KL/BS107KL Vishay Siliconix N-Channel 240 V D-S MOSFET FEATURES PRODUCT SUMMARY Part Number VDS (V) RDS(on) () VGS(th) (A) 240 4 at VGS = 10 V 0.8 to 2 ID (A) 0.2 TN2404K TN2404K, BS107KL • • • • • Qg (Typ.) 0.3 4.87 nC Low On-Resistance: 4 	Original	PDF	TN2404K/TN2404KL/BS107KL TN2404K TN2404K, BS107KL O-226AA O-92-18RM TN2404KL 2404KL 2002/95/EC.
BS107A equivalent Abstract: BS107 "direct replacement" BC237 BS107 BC108 characteristic Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS Switching N–Channel — Enhancement BS107 BS107A 1 DRAIN 2 GATE  3 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit VDS 200 Vdc VGS VGSM ± 20 ± 30 ID IDM 250 500 PD 350 mW TJ, Tstg – 55 to 150 °C Drain – Source Voltage	Original	PDF	BS107 BS107A 226AA) Source218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 BS107A equivalent BS107 "direct replacement" BC237 BC108 characteristic
Untitled Abstract: No abstract text available Text: BS107P Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V) I(D) Max. (A)120m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)500m Minimum Operating Temp (øC)	Original	PDF	BS107P
DA218 Abstract: bs107 transistor BS107 Text: BS107 N–CHANNEL ENHANCEMENT MODE TRANSISTOR Features • · · · High Breakdown Voltage High Input Impedance Fast Switching Speed Specially Suited for Telephone Subsets E A TO-92 B C Mechanical Data · · · · Case: TO-92 Plastic Leads: Solderable per MIL-STD-202, Method 208	Original	PDF	BS107 MIL-STD-202, DA21804 DA218 bs107 transistor BS107
BS107 Abstract: VN2010L Text: VN2010L/BS107 N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) VN2010L 200 BS107 rDS(on) Max (W) VGS(th) (V) ID (A) 10 @ VGS = 4.5 V 0.8 to 1.8 0.19 28 @ VGS = 2.8 V 0.8 to 3 0.12 Features Benefits Applications D D	Original	PDF	VN2010L/BS107 BS107 VN2010L O-226AA) P-38283--Rev. 15-Aug-94 BS107 VN2010L
BC107 characteristic Abstract: BC107 to92 BS107 BC107 to-92 Text: BS107, BS107A Preferred Device Small Signal MOSFET 250 mAmps, 200 Volts N−Channel TO−92 Features http://onsemi.com • Pb−Free Package is Available* 250 mA, 200 V RDS on = 14 W (BS107) RDS(on) = 6.4 W (BS107A) N−Channel MAXIMUM RATINGS Rating Drain −Source Voltage	Original	PDF	BS107, BS107A BS107) BS107A) BS107/D BC107 characteristic BC107 to92 BS107 BC107 to-92
TO-92-18RM Abstract: bs107 equivalent of BS107 BS107 application BS107-TA bs107 transistor BS107KL BS107KL-TA BS107KL-TR1 BS107-TR1 Text: Specification Comparison Vishay Siliconix BS107KL vs. BS107 Description: N-Channel, 200 V D-S MOSFET Package: TO-92-18RM Pin Out: Identical Part Number Replacements: BS107KL-TA Replaces BS107-TA BS107KL-TR1 Replaces BS107-TR1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted	Original	PDF	BS107KL BS107 O-92-18RM BS107KL-TA BS107-TA BS107KL-TR1 BS107-TR1 BS107KL BS107 TO-92-18RM equivalent of BS107 BS107 application BS107-TA bs107 transistor BS107-TR1
Untitled Abstract: No abstract text available Text: VN2010L/BS107 Vishay Siliconix N-Channel 200-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 10 @ VGS = 4.5 V 0.8 to 1.8 0.19 28 @ VGS = 2.8 V 0.8 to 3 0.12 VN2010L 200 BS107 D D D D D Low On-Resistance: 6 W	Original	PDF	VN2010L/BS107 VN2010L BS107 O-226AA 08-Apr-05
Untitled Abstract: No abstract text available Text: N-CHANNEL ENHANCEM ENT M ODE VERTICAL DM OS FET BS107P ISSUE 2 – SEPT 93 FEATURES * 200 Volt VDS * RDS on =23Ω D G REFER TO BS107PT FOR GRAPHS S E-Line TO92 Compatible ABSOLUTE M AXIM UM RATINGS. PARAM ETER SYM BOL VALUE UNIT Drain-Source Voltage VDS 200	Original	PDF	BS107P BS107PT 100mA*
Untitled Abstract: No abstract text available Text: BS107A Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V)20 I(D) Max. (A)250m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)600m Minimum Operating Temp (øC)	Original	PDF	BS107A
BP317 Abstract: BS107A MBB692 Text: DISCRETE SEMICONDUCTORS DATA SHEET BS107A N-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor	Original	PDF	BS107A SC13b SCA54 137107/00/01/pp8 BP317 BS107A MBB692

BS107 Abstract: No abstract text available Text: BS107 VISHAY N-CHANNEL ENHANCEMENT MODE TRANSISTOR /Li T E M I ri I POWER SEMICONDUCTOR / Features High Breakdown Voltage High Input Impedance Fast Switching Speed Specially Suited for Telephone Subsets TO-92 Mechanical Data_ • • • • Case: TO-92 Plastic	OCR Scan	PDF	BS107 MIL-STD-202, DS21804 BS107
Untitled Abstract: No abstract text available Text: BS107 VISHAY N -C H A N N E L E N H A N C E M E N T M O D E T R A N S IS T O R F e a t u r e s _ • • • • High Breakdown Voltage High Input Impedance Fast Switching Speed Specially Suited for Telephone Subsets	OCR Scan	PDF	BS107 MIL-STD-202, DS21804
Untitled Abstract: No abstract text available Text: Philips Semiconductors BS107 Data sheet status Prelim inary specification date of issue February 1991 N-channel enhancement mode vertical D-MOS transistor FOR DETAILED INFORMATION SEE THE LATEST ISSUE OF HANDBOOK SC07 OR DATA SHEET PIN CONFIGURATION FEATURES	OCR Scan	PDF	BS107 -TO-92 MBB073
TRANSISTOR SL 100 Abstract: bs107a Text: Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor FEATURES BS107A QUICK REFERENCE DATA • Direct interface to C-MOS, TTL, etc. Gate-source voltage open drain • High-speed switching Drain current (DC) • No second breakdown	OCR Scan	PDF	BS107A TRANSISTOR SL 100 bs107a
Untitled Abstract: No abstract text available Text: BS107A J V N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and designed for use as line current interrupter in telephone sets and fo r application in relay, high-speed and	OCR Scan	PDF	BS107A bb53131 003b0ai 003b003
BS107A Abstract: BS107 MOTOROLA Text: MOTOROLA Order this document by BS107/D SEMICONDUCTOR TECHNICAL DATA TM OS Switching N-Channel — Enhancement BS107 BS107A 1 DRAIN 3 SOURCE MAXIMUM RATINGS Rating Drain-Source Voltage Gate-Source Voltage — Continuous — Non-repetitive tp < 50 us Symbol	OCR Scan	PDF	BS107/D BS107 BS107A BS107A BS107 MOTOROLA
Untitled Abstract: No abstract text available Text: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 - SEPT 93 FEATURES * 200 Volt VDS * R DS on =23£i REFER TO BS107PT FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 200 V Continuous Drain Current at Tarnij=25°C	OCR Scan	PDF	BS107PT 001G35S
2904S Abstract: DS130 Text: BS107,A* C A S E 29-04, S T Y L E 30 TO-92 TO-226AA MAXIMUM RATINGS Sym bol V a lu e U n it D ra in - S o u rc e V o lta g e R atin g VDS 200 Vdc G a te - S o u rc e V o lta g e VGS r 20 Vdc Id 'd m 250 500 m Adc Pd 3 50 mW T j ' ^"stg - 5 5 to 150 PC D ra in C u rre n t	OCR Scan	PDF	BS107 O-226AA) 2904S DS130
lt 2904 Abstract: BS107 MOTOROLA Text: BS107,A* CASE 29-04, STYLE 30 TO-92 TO-226AA M A X I M U M R A T IN G S Rating Sym bol Value Unit VDS 200 Vdc VGS vgsm ±20 ±3 0 Vdc Vpk 'd 'DM 250 500 mAdc Pd 350 mW TMOS SWITCHING TJ' Tstg - 5 5 to 150 °C N-CHANNEL — ENHANCEM ENT Drain-Source Voltage	OCR Scan	PDF	BS107 O-226AA) BS107A lt 2904 BS107 MOTOROLA
Untitled Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS Switching N -C hannel — Enhancement BS107 BS107A 1 DRAIN 3 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Vd S 200 Vdc Vg s Vg SM ±20 ±30 Vdc Vpk Id 'd m 250 500 pd 350 mW T ji Tstg -5 5 to 150 °C Drain - Source Voltage	OCR Scan	PDF	BS107 BS107A O-226AA) BS107

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BS107 Price and Stock

Diodes Incorporated BS107PSTZ

Diodes Incorporated BS107P

Samtec Inc BBS-107-T-B

Samtec Inc BBS-107-G-A

onsemi BS107AG

BS107 Datasheets (97)

BS107 Datasheets Context Search

BS107

vishay siliconix code marking

equivalent of BS107

Untitled

BS107A equivalent

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DA218

BS107

BC107 characteristic

TO-92-18RM

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BP317

BS107

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TRANSISTOR SL 100

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BS107A

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2904S

lt 2904

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