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    BS107A Price and Stock

    onsemi BS107AG

    MOSFET N-CH 200V 250MA TO92-3
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    onsemi BS107ARL1

    MOSFET N-CH 200V 250MA TO92-3
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    DigiKey BS107ARL1 Reel 4,000
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    Chip 1 Exchange BS107ARL1 3,527
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    onsemi BS107ARL1G

    MOSFET N-CH 200V 250MA TO92-3
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    Avnet Silica BS107ARL1G 143 Weeks 2,000
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    Others BS107AG

    AVAILABLE EU
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    ComSIT USA BS107AG 23,213
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    Samtec Inc LBS-107-A-T-S

    Connectors
    Free Sample
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    Vyrian LBS-107-A-T-S 1,617
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    Find more BS107A price and stock on Findchips.com

    BS107A Datasheets (30)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BS107A Motorola TMOS Switching(N-Channel-Enhancement) Original PDF
    BS107A On Semiconductor TRANS MOSFET N-CH 200V 0.25A 3TO-92 BOX Original PDF
    BS107A On Semiconductor Small Signal MOSFET 250 mAmps, 200 Volts Original PDF
    BS107A Philips Semiconductors N-Channel Enhancement Mode Vertical D-MOS Transistor Original PDF
    BS107A Philips Semiconductors N-Channel Enhancement Mode Vertical D-MOS Transistor Original PDF
    BS107A Motorola European Master Selection Guide 1986 Scan PDF
    BS107A Motorola Switchmode Datasheet Scan PDF
    BS107A Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BS107A Unknown FET Data Book Scan PDF
    BS107A Unknown Shortform Datasheet & Cross References Data Short Form PDF
    BS107A On Semiconductor Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, MOSFET, N Channel, .25A, 200V, Pkg Style TO92 Scan PDF
    BS107AG On Semiconductor Small Signal MOSFET 250 mAmps, 200 Volts Original PDF
    BS107AG On Semiconductor Small Signal MOSFET 250 mAmps, 200 Volts; Package: TO-92 (TO-226) 5.33mm Body Height; No of Pins: 3; Container: Bulk; Qty per Container: 1000 Original PDF
    BS107AMO Philips Semiconductors Transistor Mosfet N-CH 200V 0.15A 3TO-92 AMMOPACK Original PDF
    BS107AMO Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    BS107ARL On Semiconductor BS107 - TRANSISTOR 250 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92, PLASTIC, TO-226AA, 3 PIN, FET General Purpose Small Signal Original PDF
    BS107ARL1 On Semiconductor Small Signal MOSFET 250 mA, 200 V N-Channel TO-92 Original PDF
    BS107ARL1 On Semiconductor Small Signal MOSFET 250 mAmps, 200 Volts; Package: TO-92 (TO-226) 5.33mm Body Height; No of Pins: 3; Container: Tape and Reel; Qty per Container: 2000 Original PDF
    BS107ARL1G On Semiconductor Small Signal MOSFET 250 mAmps, 200 Volts; Package: TO-92 (TO-226) 5.33mm Body Height; No of Pins: 3; Container: Tape and Ammunition Box; Qty per Container: 2000 Original PDF
    BS107ARL1G On Semiconductor Small Signal MOSFET 250 mAmps, 200 Volts Original PDF

    BS107A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BS107

    Abstract: BS107A BS107AG BS107ARL1 BS107ARLRM BS107ARLRP BS107G BS107RL1 BS107RLRA
    Text: BS107, BS107A Preferred Device Small Signal MOSFET 250 mAmps, 200 Volts N−Channel TO−92 Features http://onsemi.com • Pb−Free Package is Available* 250 mA, 200 V RDS on = 14 W (BS107) RDS(on) = 6.4 W (BS107A) N−Channel MAXIMUM RATINGS Rating Drain −Source Voltage


    Original     		BS107, BS107A BS107) BS107A) BS107/D BS107 BS107A BS107AG BS107ARL1 BS107ARLRM BS107ARLRP BS107G BS107RL1 BS107RLRA PDF

    BS107A equivalent

    Abstract: BS107 "direct replacement" BC237 BS107 BC108 characteristic
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS Switching N–Channel — Enhancement BS107 BS107A 1 DRAIN 2 GATE  3 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit VDS 200 Vdc VGS VGSM ± 20 ± 30 ID IDM 250 500 PD 350 mW TJ, Tstg – 55 to 150 °C Drain – Source Voltage


    Original     		BS107 BS107A 226AA) Source218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 BS107A equivalent BS107 "direct replacement" BC237 BC108 characteristic PDF

    TRANSISTOR SL 100

    Abstract: bs107a
    Text: Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor FEATURES BS107A QUICK REFERENCE DATA • Direct interface to C-MOS, TTL, etc. Gate-source voltage open drain • High-speed switching Drain current (DC) • No second breakdown


    OCR Scan     		BS107A TRANSISTOR SL 100 bs107a PDF

    Untitled

    Abstract: No abstract text available
    Text: BS107A J V N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and designed for use as line current interrupter in telephone sets and fo r application in relay, high-speed and


    OCR Scan     		BS107A bb53131 003b0ai 003b003 PDF

    BS107A

    Abstract: BS107 MOTOROLA
    Text: MOTOROLA Order this document by BS107/D SEMICONDUCTOR TECHNICAL DATA TM OS Switching N-Channel — Enhancement BS107 BS107A 1 DRAIN 3 SOURCE MAXIMUM RATINGS Rating Drain-Source Voltage Gate-Source Voltage — Continuous — Non-repetitive tp < 50 us Symbol


    OCR Scan     		BS107/D BS107 BS107A BS107A BS107 MOTOROLA PDF

    BC107 characteristic

    Abstract: BC107 to92 BS107 BC107 to-92
    Text: BS107, BS107A Preferred Device Small Signal MOSFET 250 mAmps, 200 Volts N−Channel TO−92 Features http://onsemi.com • Pb−Free Package is Available* 250 mA, 200 V RDS on = 14 W (BS107) RDS(on) = 6.4 W (BS107A) N−Channel MAXIMUM RATINGS Rating Drain −Source Voltage


    Original     		BS107, BS107A BS107) BS107A) BS107/D BC107 characteristic BC107 to92 BS107 BC107 to-92 PDF

    Untitled

    Abstract: No abstract text available
    Text: BS107A Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V)20 I(D) Max. (A)250m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)600m Minimum Operating Temp (øC)


    Original     		BS107A PDF

    BP317

    Abstract: BS107A MBB692
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BS107A N-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor


    Original     		BS107A SC13b SCA54 137107/00/01/pp8 BP317 BS107A MBB692 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS Switching N -C hannel — Enhancement BS107 BS107A 1 DRAIN 3 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Vd S 200 Vdc Vg s Vg SM ±20 ±30 Vdc Vpk Id 'd m 250 500 pd 350 mW T ji Tstg -5 5 to 150 °C Drain - Source Voltage


    OCR Scan     		BS107 BS107A O-226AA) BS107 PDF

    BS107

    Abstract: BS107 application BS107A BS107ARL1 BS107ARLRM BS107ARLRP BS107RL1 BS107RLRA
    Text: BS107, BS107A Preferred Device Small Signal MOSFET 250 mAmps, 200 Volts N–Channel TO–92 MAXIMUM RATINGS Rating Drain–Source Voltage Gate–Source Voltage – Continuous – Non–repetitive tp ≤ 50 µs Drain Current Continuous (Note 1.) Pulsed (Note 2.)


    Original     		BS107, BS107A BS107) BS107A) r14525 BS107/D BS107 BS107 application BS107A BS107ARL1 BS107ARLRM BS107ARLRP BS107RL1 BS107RLRA PDF

    BS107

    Abstract: BS107G BS107AG BS107A BS107ARL1 BS107ARL1G mosfet to92
    Text: BS107, BS107A Preferred Device Small Signal MOSFET 250 mAmps, 200 Volts N-Channel TO-92 Features •ăAEC Qualified •ăPPAP Capable •ăPb-Free Package is Available* 250 mAMPS, 200 VOLTS RDS on = 14 W (BS107) RDS(on) = 6.4 W (BS107A) Rating Drainā-āSource Voltage


    Original     		BS107, BS107A BS107) BS107A) BS107/D BS107 BS107G BS107AG BS107A BS107ARL1 BS107ARL1G mosfet to92 PDF

    BS107A

    Abstract: No abstract text available
    Text: BS107A A _ N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and designed for use as line current interrupter in telephone sets and for application in relay, high-speed and


    OCR Scan     		BS107A C03b0ai 7ZSS773 003b005 BS107A PDF

    Untitled

    Abstract: No abstract text available
    Text: BS107A Small Signal MOSFET 250 mA, 200 V, N−Channel TO−92 Features • AEC−Q101 Qualified and PPAP Capable • This is a Pb−Free Device* http://onsemi.com 250 mAMPS, 200 VOLTS RDS on = 6.4 W MAXIMUM RATINGS Rating Drain −Source Voltage Gate−Source Voltage


    Original     		BS107A BS107/D PDF

    Untitled

    Abstract: No abstract text available
    Text: BS107A Small Signal MOSFET 250 mAmps, 200 Volts N−Channel TO−92 Features http://onsemi.com • AEC Qualified • PPAP Capable • This is a Pb−Free Device* 250 mAMPS, 200 VOLTS RDS on = 6.4 W N−Channel D MAXIMUM RATINGS Rating Drain −Source Voltage


    Original     		BS107A BS107/D PDF

    BS107 MOTOROLA

    Abstract: BS107A BS107
    Text: MOTOROLA Order this document by BS107/D SEMICONDUCTOR TECHNICAL DATA TMOS Switching N–Channel — Enhancement BS107 BS107A 1 DRAIN 2 GATE  3 SOURCE MAXIMUM RATINGS Rating Drain – Source Voltage Gate–Source Voltage — Continuous — Non–repetitive tp ≤ 50 µs


    Original     		BS107/D BS107 BS107A 226AA) BS107 MOTOROLA BS107A BS107 PDF

    BS107

    Abstract: PPAP MANUAL BS107AG BS107A BS107ARL1 BS107ARL1G BS107G
    Text: BS107, BS107A Preferred Device Small Signal MOSFET 250 mAmps, 200 Volts N-Channel TO-92 http://onsemi.com Features •ăAEC Qualified •ăPPAP Capable •ăPb-Free Package is Available* 250 mAMPS, 200 VOLTS RDS on = 14 W (BS107) RDS(on) = 6.4 W (BS107A)


    Original     		BS107, BS107A BS107) BS107A) BS107/D BS107 PPAP MANUAL BS107AG BS107A BS107ARL1 BS107ARL1G BS107G PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS Switching BS107 BS107A N -Channel — Enhancement 1 DRAIN G ATE ' 3 SOURCE M AXIM UM R A T IN G S Rating Symbol Value Unit V DS 2 00 Vdc VGS V GSM ± 20 ± 30 Vdc Vpk 'd 'D M 250 500 PD 350 mW ^J. Ts tg - 5 5 to 150


    OCR Scan     		BS107 BS107A PDF

    2106a

    Abstract: BST72A CROSS 0545N2 vn1720m ZVN2106A ZVN3306A MPF910 zetex zvp2120a VP0545N2 2N7019
    Text: CROSS R EF ER E N C E LIST Industry Part No. Zetex Suggested Replacem ent 2N 6659 2N 6660 2N6661 ZVN2106B ZVN2106B ZVN2110B 2N 7000 2N7001 2N7002 2N7007 2N 7008 2N 7019 2N 7025 2N 7000 ZVN3320F 2N 7002 ZVN3320A ZVN3306A ZVP3306F ZVP2106A BS107 BS107A BS108


    OCR Scan     		2N6661 2N7001 2N7002 2N7007 BS107 BS107A BS108 BS170 BS250 BSR64 2106a BST72A CROSS 0545N2 vn1720m ZVN2106A ZVN3306A MPF910 zetex zvp2120a VP0545N2 2N7019 PDF

    PHC2300

    Abstract: BSH202 200B PHC20306 PHP45N03LT php18n20e BST100 PHT11N06LT PHN203 PHB50N03LT
    Text: Philips Semiconductors PowerMOS Transistors TYPE NUMBER PAGE Index TYPE NUMBER 2N7000 48 BSP110 2N7002 54 BSP120 PAGE TYPE NUMBER PAGE 203 BST84 358 208 BST86 364 BS107 60 BSP121 213 BUK100-50DL 385 BS107A 66 BSP122 219 BUK100-50GL 393 BS108 70 BSP126 221


    OCR Scan     		2N7000 2N7002 BS107 BS107A BS108 BS170 BS250 BSH101 BSH102 BSH103 PHC2300 BSH202 200B PHC20306 PHP45N03LT php18n20e BST100 PHT11N06LT PHN203 PHB50N03LT PDF

    Untitled

    Abstract: No abstract text available
    Text: BS107A _ FOR MORE DETAILED INFORMATION SEE LATEST ISSUE OF HANDBOOK SC07 OR DATA SHEET N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and designed fo r use as line current interrupter in telephone sets and fo r application in relay, high-speed and


    OCR Scan     		BS107A PDF

    BC107 to92

    Abstract: BC107 characteristic bs107 BC107 to-92
    Text: BS107, BS107A Preferred Device Small Signal MOSFET 250 mAmps, 200 Volts N−Channel TO−92 Features http://onsemi.com • Pb−Free Package is Available* 250 mA, 200 V RDS on = 14 W (BS107) RDS(on) = 6.4 W (BS107A) N−Channel MAXIMUM RATINGS Rating Drain −Source Voltage


    Original     		BS107, BS107A BS107) BS107A) BS107 BS107G BS107RLRA BS107RL1 BC107 to92 BC107 characteristic BC107 to-92 PDF

    Untitled

    Abstract: No abstract text available
    Text: BS107A y V N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and designed for use as line current interrupter in telephone sets and fo r application in relay, high-speed and


    OCR Scan     		BS107A PDF

    MC68B21CP

    Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
    Text: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References


    Original     		SG379/D 1N965BRL ZEN15V 1N751AS 1N967BRL ZEN18V 1N751ASRL 1N968BRL ZEN20V MC68B21CP xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N PDF

    mpx6115

    Abstract: wheatstone bridge invasive blood pressure sensor AN1646 abstract for battery level indicator of lm3914 infusion pump pressure transducer ZO 607 TRIAC TRANSISTOR NPN, b2f piezo buzzer mtbf ABSTRACT FOR water level indicator using 4 led MPX5100
    Text: Freescale Semiconductor, Inc. Freescale Semiconductor, Inc. Sensor Device Data Book DL200/D Rev. 5, 01/2003 WWW.MOTOROLA.COM/SEMICONDUCTORS For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. DATA CLASSIFICATION Product Preview


    Original     		DL200/D DL200/D, mpx6115 wheatstone bridge invasive blood pressure sensor AN1646 abstract for battery level indicator of lm3914 infusion pump pressure transducer ZO 607 TRIAC TRANSISTOR NPN, b2f piezo buzzer mtbf ABSTRACT FOR water level indicator using 4 led MPX5100 PDF