200B Search Results

P200B

Contextual Info: DOF —O —212 E < 0 3 . 0 8 % -n b DATE üfc He REV. DON W. M. A NO. CHANGED 2 8.Se P.200B 053208 nDR.m £ DESCRIPTION TO B I L I N G U A L AND REDRAWN S C A L E $ a è CHK. m & 1$ AP P D . AP P D . S.HARA etc. 5 : 1 ) NOTE 1. MO LD C A V I T Y D E S I G N A T O R A P P E AR S IN RA IS ED LETTERS.

WED3C750A8M-200BX

Contextual Info: WED3C750A8M-200BX HI-RELIABILITY PRODUCT RISC Microprocessor Module PRELIMINARY* OVERVIEW The WED3C750A8M-200BX is offered in industrial -40°C to +85°C and military (-55°C to +125°C) temperature ranges and is well suited for embedded applications such as missiles, aerospace, flight

Contextual Info: JK ft D A T E REV. 2 29.Mar.200B h 18.Mar.2010 3 t I R§ DON NO. 059754 CORRECT 069676 ADDED AN wm —IDR. T" DESCRIPTION ERROR *A P P U D. —£ 59 A P P D. OHK. M.MATSUMOTO T.MIYASHITA TOLERANCE Y.8U0II h fyhnfatsy R.KATOU XC72W A H a +0 . APPLICABLE WIRE

SXVX-200

Abstract: SXVX-200BHG
Contextual Info: Search by Part Number Search by Keyword s Contact IDT | Investors | Press Calculators | Cross Reference | Green Initiative | Parametric Search | Search by Part Number, Keyw ord, Document, Green/Pb-Free, Package Home > Products > Display Solutions > Reon-VX Display Devices > SXVX-200 > SXVX-200BHG

Contextual Info: BCM Bus Converter BCM48B x 040 y 200B00 S C NRTL US Unregulated DC-DC Converter FEATURES DESCRIPTION The VI Chip® bus converter is a high efficiency >94% Sine Amplitude Converter (SAC™) operating from a 38 to 55 Vdc primary bus to deliver an isolated, unregulated 3.2 to 4.6

47741

Contextual Info: 1 V 'ON B DATE RE V. 8 LL9E0PS ON I M V t iO - ^ S E E D E S I G N A T I O N MM50~200B * - C1R R SERIES PREFIX 5/1J - * " % NO. OF TYPE TYPE 2 :TYPE 1 :T Y P E ±0.15 67.85 (LATC H SLOT 7.No v . 2001 49068 CHANGED 4 21. D e c . 2001 49304 CHANGED D IMM( REF.

Contextual Info: 2. 1 ‘ ON % -nb DATE ft üft REV. 80 L z e o r s WM FJ & DON NO. siDR.m D E S C R I PT I ON aCHK. m 3& *A P PD. u A P PD. ON I MVi dQ £#f f l %l D E S I G N A T I O N MM50-200B*-D S E R I E S R R P R E F I X A P P L I C A B L E : R EV ER SE D I MM ( R E F . )

200B

Abstract: M117 T200-2
Contextual Info: 01788 20ns -0N 0 Ni mv h q - ^ #m #•ñ B JK f t REV. m 2 w. n ñ & DESCRIPTION DCN NO. DATE 22.Jui.200B CORRECT 52540 AN Ü ÿ "i APPD. a ñ CHK. DR. ERROR & u APPD. XHlY/\5HlV\ H.N I SH I OKA 2 . 3 SJ ±0.15 o LT1 „ ± 0 . 05 "HN . ±0 . 1 Uj s+s-H

Contextual Info: / 1 6ZEZÉ0PS 'ON S -ñ B REV. DON DATE ÖN IMVidQ £#fflH m M ñ & DESCRIPTION NO. ti DR. 21.ApP.2003 51756 REDRAWN 18.JUI.200B 52446 CHANGED S PECI AL CONTROL ITEM 1 1.Nov.2003 053713 REVI SED FORM 3.Ma r.2004 0 5 44 00 CHANGED HREADED HOLE SIZE eto ÜÉ

Contextual Info: %-n b DON NO. 2 19.Aug.200B 53072 3 8. Sep.2003 053208 të. & REV. 60ZŸZ0PS ’ON ONIMVdQ ±o. 5 25. 8 DATE K M P3 S m E a Üâ CHK. DR. DE S C R I PT I ON R ED RA W N AND A D D E D P.O.B. HOLE P A T T E R N S ( REF. e t c . S.HARA CHANGED TO B I L I N G U A L

200B

Abstract: D410 SSL-LX3044SGT
Contextual Info: UNCONTROLLED DOCUMENT REV, 2.9 11 4 D IA.[] 0 3 .2 0 PART NUMBER REV. S S S — L X 3 0 4 4 S G T — 200B B E.C.N. NUMBER AND REVISION COMMENTS DATE A CHG. NOTE 2 SPACER DESIGN. UPD SPECS./ 1 0 .2 4 .9 5 B E.C.N. # 1 1 1 4 8 . 0 1 .0 9 .0 7 [00.12611 ELECTRO-OPTICAL CHARACTERISTICS T * = 2 5 'C

Contextual Info: SIGN DA T E 200B.06.04 I l DESCRIPTION APPROVER Rev B: Standard material changed from UL94V-2 to UL94V-0 Jimmy THIS IS C A D DRAWING, DO N O T R E V IS E M ANUALLY!!! I Material 5.8 .228 2.50 .098 □ 0.64±0.02 TYP. ,025±.001 In s u la t o r : N y lo n 66

MM50-200B1

Contextual Info: % -ñB DATE DON NO. 1 0.Feb.2006 059307 JK » REV. 8ZZ10LPS 2 ‘ ON 0 N i M V ü a - i - § f f i mh n & DESCRIPTION C O R R E C T I O N OF ERROR IN WRI T T I N G a m APPD. DR. a g CHK. E.MURANO Y.YAHIRO * 3 APPD. D E S I G N A T I O N MM50-200B* S E R I ES

7427 pin configuration

Contextual Info: O K I Semiconductor MTC821M216-xxOBI Static R A M GENERAL DESCRIPTION The MTC821M216-150B1 and MTC821M216-200B1 are 1.25M bytes static RAM cards in confor­ mity with the IC memory card guideline Ver.4.1 of the Japan Electronic Industry Development Association, Inc.

Contextual Info: O K I Semiconductor M TC 8225716-xxOB1 Static RAM GENERAL DESCRIPTION TheMTC8225716-150Bl and MTC8225716-200B1 are 256Kbytes static RAM cards in conformity with the IC memory card guideline Ver.4.1 of the Japan Electronic Industry Development Association, Inc.

Contextual Info: KX20 SERIES CONNECTORS 0.8m m .0 3 1 " Contact Spacing, E M I Shielded, PCB-to-PCB Connectors PLUG • RIGHT ANGLE THROUGH HOLE TYPE • 4 ROWS Part Number: KX20-200BA-F2LT-A1H 200 CONTACTS 3.8 (. 386 ) 2.4 f .094) ' 1c ? i.ooe:' CM CM o o co <o d d 5 4

ld33a

Abstract: transistor PSMN070 PSMN070-200P PSMN070-200B
Contextual Info: Philips Semiconductors Objective specification TrenchMOS transistor SYMBOL FEATURES • • • • • PSMN070-200B, PSMN070-200P QUICK REFERENCE DATA ’Trench’ technology Very low on-state resistance Fast switching High thermal cycling performance

Contextual Info: SIGN DA T E DESCRIPTION APPROVER C u r r e n t r a t in g c h a n g e d fro m 10A to 15A 200B.02.02 Jun THIS IS C A D DRAWING, DO N O T R E V IS E M ANUALLY!!! Material • T e rm in a l b od y • [m etal h o u s in g : B r a s s M a chin ed • T e rm in a l scre w : S t e e l Z in c p la tin g

Contextual Info: CYD02S36V18-200BBXC Alert me about changes to this product Status: In Production Datasheet Inventory Packaging/Ordering Quality and RoHS Technical Documents Related Products Support and Community CYD02S36V18-200BBXC Automotive Qualified N Min. Operating Voltage V

Contextual Info: SGS-THOMSON CLP30-200B1 m Application Specific Discretes A.S.D. O VERVO LTAG E AND O VERCURRENT PROTECTION FOR TELECOM LINE MAIN APPLICATIONS Any telecom equipment submitted to transient overvoltages and lightning strikes such as : • Analog and ISDN line cards

thyristor 072 0043

Abstract: scr 072 0043 FLC10-200D smd THYRISTOR scr firing gas ignition DIODE smd marking E3 K1621 diode smd ED 74 Zener diode smd marking 27 lighter ignitor
Contextual Info: FLC10-200D FLC10-200B  Application Specific Discretes A.S.D.TM FIRE LIGHTER CIRCUIT TARGET SPECIFICATION FEATURES SPACE SAVING : MONOLITHIC FIRE LIGHTER FUNCTION INTEGRATION DEDICATED THYRISTOR STRUCTURE FOR CAPACITANCE DISCHARGE IGNITION OPERATION HIGH PULSE CURRENT CAPABILITY

Contextual Info: 200BNS Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current240 @Temp (øC) (Test Condition)90# V(RRM)(V) Rep.Pk.Rev. Voltage400 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.7.0k V(FM) Max.(V) Forward Voltage1.05 @I(FM) (A) (Test Condition)240 @Temp. (øC) (Test Condition)25õ

tip 220

Abstract: CLP200M CLP30-200B1 LCP1511D VDE0433 VDE0878
Contextual Info: CLP30-200B1 Application Specific Discretes A.S.D. OVERVOLTAGE AND OVERCURRENT PROTECTION FOR TELECOM LINE MAIN APPLICATIONS Any telecom equipment submitted to transient overvoltages and lightning strikes such as : Analog and ISDN line cards PABX DESCRIPTION

PSMN070-200P

Abstract: PSMN070-200B
Contextual Info: Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES PSMN070-200B, PSMN070-200P SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance d VDSS = 200 V