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BSN254 Abstract: BSN254A Text: BSN254 BSN254A N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTORS N-channel enhancement mode vertical D-MOS transistors in TO-92 variant envelope and designed for use as tine current interrupters in telephone sets and fo r application in relay, high-speed and	OCR Scan	PDF	BSN254 BSN254A 0D3b02b BSN254 BSN254A
BSS91 Abstract: to-18 dimensions Text: 7110ß2Li D[]b7fi7ö Sil IPHIN BSS91 N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancem ent m ode vertical D-MOS tran sisto r in a T O -18 envelope. Designed p rim a rily as a line c u rre n t in te rru p te r in telephone sets, it can also be applied in o th e r applica tio ns such as in relays,	OCR Scan	PDF	BSS91 BSS91 to-18 dimensions
BS107A Abstract: No abstract text available Text: BS107A A _ N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and designed for use as line current interrupter in telephone sets and for application in relay, high-speed and	OCR Scan	PDF	BS107A C03b0ai 7ZSS773 003b005 BS107A
BST70A Abstract: No abstract text available Text: BST70A N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channei enhancement mode vertical D-MOS transistor in TO-92 variant envelope and intended for use in relay, high-speed and line-transformer drivers. Features • Low FiDSon • Direct interface to C-MOS, TTL, etc.	OCR Scan	PDF	BST70A BST70A 7ZS1032 RDSonat25
02p SMD TRANSISTOR Abstract: No abstract text available Text: • bbS3131 002315=1 56H « A P X N AUER PHILIPS/DISCRETE BST82 b7E D y v . N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in SOT23 envelope and designed for use as Surface Mounted Device SMD in thin and thick-film circuits for telephone ringer and for application	OCR Scan	PDF	bbS3131 BST82 175DSon 02p SMD TRANSISTOR
BGY41 Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.	OCR Scan	PDF	LCD01 BGY41 BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
v709 Abstract: VN2410L transistor wz transistor 711 Text: 7 1 L ü ô 2 b D O bfiO S fl 3b3 • P H I N Philips Semiconductors VN2410L Data sheet status Product specification date of issue July 1993 N-channel enhancement mode vertical D-MOS transistor PIN CONFIGURATION FEATURES PINNING - TO-92 variant PIN • Low RDS on	OCR Scan	PDF	711002b VN2410L aTO-92 MBB073 711Dfl2t. typi031 v709 VN2410L transistor wz transistor 711
Untitled Abstract: No abstract text available Text: bb53T31 DD25bS3 ITfl H A P X N AMER PHILIPS/DISCRETE BST84 b?E D N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel vertical D-MOS transistor in SOT89 envelope and designed fo r use as line current inter rupter in telephone sets and fo r application in relay, high-speed and line-transformer drivers.	OCR Scan	PDF	bb53T31 DD25bS3 BST84
BFG55A Abstract: philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60 Text: Philips Semiconductors Surface mounted semiconductors Contents page PART A SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors	OCR Scan	PDF	LCD01 BFG55A philips discrete a440 IC05 philips a1211 lg SMD MARKING CODE ALg BST60
BSP108 Abstract: transistor marking ST4 Text: • ^53*331 OOaSMTÛ STM H A P X N AMER PHILIPS/DISCRETE BSP108 b?E » J ' - N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancem ent m ode ve rtica l D-MOS tran sisto r in a m in ia tu re S O T 223 envelope and intended	OCR Scan	PDF	BSP108 OT223 BSP108 transistor marking ST4