023SBOS Search Results

Contextual Info: SIEMENS AKTIENGESELLSCHAF LOE ]> • 023SbOS G D S m ? S M7D I1SIE6 SIEMENS Transistoren Transistors AIGaAs/GaAs HEMTs AIGaAs/GaAs HEMTs Characteristics TA = 25° C Maximum Ratings E mW 9m mS 70 180 40 ¿> P o Type 70 180 40 -3.0.0 60 180 50 70 200 40

transistor Siemens 14 S S 92

Abstract: transistor 115 47e
Contextual Info: I 023SbOS 0020014 3 El SIEG SIEMENS AKTIENGESELLSCHAF 47E » T-21-Z5 BS 107 SIPMOS Small-Signal Transistor Vos /„ = 200 V =0.13 A flbs o n = 26 Q • N channel • Enhancement mode • Package: TO-92') "type Ordering code for version on tape Ordering code

SBV566

Abstract: hall generator K2488 Hall Siemens sbv 566 siemens hall ferrite P Ferrite Siemens Siemens Hall siemens hall generator
Contextual Info: D • 023SbOS Q01L373 1 ISIE6 Ferrite Mounted Hall Generator SBV 566 SIEMENS AKTIEN6ESELLSCHAF - Features _LL • Compact size • High sensitivity J= = Q □2.WW»7.S- Typical ap p licatio n s • Current sensing • Position sensing - 12.1

BC 179

Abstract: transistor af 178 BC179 BC178B Q62702-C685 TI-5045 BC179E C154 TRANSISTOR BC 177 transistor
Contextual Info: 2SC ì> • 023SbOS O D Q m iS 7 H S I E 6 ¿pc xj*tLL^ —- jO D '*y* <Ky PNP Silicon Transistors * " BC 177 -S IE M E N S AKTIENGESELLSCHAF -BC179 BC 177, BC 178, and BC 179 are epitaxial PNP silicon planar transistors in TO 18 case

TMT Isolator

Abstract: BR306 dioda switching photo transistor til 78 SFH609 F4183
Contextual Info: SIEMENS AKTIENGESELLSCHAF M7E D • 023SbOS D D 2 7 2 m S ■ SIEG 1=41-83 SIEMENS SFH609 SERIES HIGH RELIABILITY PHOTOTRANSISTOR OPTOCOUPLER Package D im ensions in Inches m m 307(7 6) .291 {7 4) 35616 Sì 248(6 3) E Œ E 3 3 3 ANOCE [T k CATHODE [ Ï NCH

SFH401-2

Abstract: SFH401-4 sfh 910 2SC300 SFH401-3 SFH401 T018 marking s15 diode 0DE7371 sfh4012
Contextual Info: SIEMENS AKTIENGESELLSCHAF 47E D • 023SbOS S IE M E N S DDE7371 ñ «ISIE6 SFH 401 SERIES GaAs INFRARED EMITTER -r-m-u Package Dimensions in Inches mm *“ .117(4 75) .181 (4.6) ~\ 1 - f i) A S .A ^ / 0.10 (254) t 216(5.» ¿11 (5.35) Cathode FEATURES Maximum Ratings

DIN 50014 STANDARD

Abstract: C67078-A1610-A2 DIN 50014 BUZ67 BV EI 301 siemens T bv
Contextual Info: ÔÔD D • 88D 023SbOS 0014714 2 « S I E G 14714 D 'T~''37~J3 BUZ67 ^SIEMENS AKTIEN6ESELLSCHAF_ Main ratings N-Channel Drain-source voltage Continuous drain current Draln-source on-reslstance Description Case - 400 V = 9,6 A h ^DS OH = 0,4 S i

Contextual Info: bOE D • 023SbOS D04bSSE 4D5 m s i E G SIEMENS SFH 4212 IRED T 0 1 8 PACKAGE rillc SIEMENS AKTIENGESELLSCHAF P a cka g e D im e n sio n s in mm FEATURES M a xim u m R atings * In G a A s P /ln P -IR E D 60 mA Forward Current DC lF .

Contextual Info: bOE ]> m 023SbOS 004b221 CHb • SIEÛ SIEMENS LB 5410-HO Blue TVA 5 mm LED Lamp SIEMENS AKTIENGESELLSCHAF LED Lamps Package Dimensions in inches (mm) Maximum Ratings FEATURES • Pure Blue Light (480 nm) • Clear T r /* (5 mm) Plastic Package • 1" Minimum Lead Length

S498

Abstract: BSS97 BSS95 BSS125 siemens 230 92 BSS 130 BSS 97 s484 S458 BSS components
Contextual Info: <IENENS AKTIEN6ESELLSCHAF 03E D • 023SbOS 001Sb37 4 BISIE6 T^£7~2S' Kleinsignaltransistoren Small-Signal Transistors N-Kanal Anreicherungstypen N channel enhancem ent types K S max) V ti(max) rriA ft P,ot mW G ehäuse P ackage SBS SCS Bestellnummer Ordering co d e

Hall Siemens sbv 525

Abstract: K2487 Hall Siemens hall generator siemens hall generator siemens hall probe siemens sbv
Contextual Info: 2^ T> • 023SbOS Q01b3?l ô H S I E 6 Field Probe for Measurements in Small Gaps S B V 525 SIEMENS AKTIENGESELLSCHAF - The S B V 525 is a hall generator of InAs semiconductor material designed for measuring magnetic fields in small gaps. S B V 5 25

BD 862

Contextual Info: " 2SC D • 023SbOS 0004417 1 « S I E 6 r T-33“31. PNP Silicon Darlington Transistors j BD 862 BD 864 SIEMENS AKTIENGESELLSCHAF ° 80866 E p ib ase p o w e r d a rlin g to n tra n sisto rs 15 W BD 862, BD 864, and BD 866 are monolithic silicon PN P epibase power darlington transistors

DIODE 3LU

Abstract: D959 Q62702-D961 Q62702-D959 3lu diode BD 862 Diode 864
Contextual Info: " 2SC D • 023SbOS 0004417 1mSIEG r T-33“31. ; PNP Silicon Darlington Transistors SIEMENS Epibase BD 862 AKTIENGESELLSCHAF ° - ! p o w e r d arlin g to n transistors 1 5 W | BD 8 6 2 , BD 8 6 4 , and BD 8 6 6 are monolithic silicon PNP epibase power darlington transistors

101F

Abstract: ACY23 ACY23V ACY32 ACY32V Q60103-Y23-E Q60103-Y23-F Q60103-Y32-E Q60103-Y32-F Q62901-B1
Contextual Info: 2SC D • 023SbOS 0004041 4 PNP Transistors for AF Input Stages SIEMENS AKTIENGESELLSCHAF ISIE6 1 5C 04041 D ACY23 ACY32 ACY 23 and ACY 32 are alloyed germanium PNP transistors in 1 A 3 DIN 41871 case similar to T0-1 . All leads are electrically insulated from the case. The collector terminal

k 942

Abstract: K942 N 2904 ic 2904 N2905 2904 d 2905 2N2904 2N2904A Q62702-F65
Contextual Info: 2SC ]> • 023SbOS 00040=52 'î H S I E 6 ‘ *7_ / " i/ * / 7 PNP Silicon Planar Transistors 2 N 2904 2 N 2905 - SIEMENS AKTIENGESELLSCHAF -2 N 2904 and 2 N 2905 are epitaxial PNP silicon planar transistors in TO 39 case 5 C 3 DIN 41873 . The collector is electrically connected to the case. The transistors are

BC 148 transistor

Abstract: transistor BC 147 NPN transistor bc 148 bc 147 transistor of transistor bc 148 bc 148 npn transistor S1000 Siemens 8C121 transistor bc 148 bc 149 transistor
Contextual Info: .25C D • MSIEG ■ _ 023SbOS GQGMCH? *? W ~/l NPN Silicon Transistors SIEMENS AKTIENGESELLSCHAF C121 i B C 122 ! - B C 123 Î BC 121, BC 122, and BC 123 are miniature epitaxial NPN silicon planar transistors in U 32

1072B

Abstract: 1072
Contextual Info: -L¡\ SIEMENS AKTIEN6ESELLSCHAF 47E D • 023SbOS 0027=107 1 « S I E G B 1060 Features: • TO metal-glass housing • type 60 material • high permissible power dissipation Application: • automatic street lamp switching • burner controls B 1072 Features:

ic 2904

Abstract: N2905
Contextual Info: 2SC T> m 023SbOS 00040=52 'î « S I E G “ _ / ~ + 7 *'/7 2 N 2904 2 N 2905 PNP Silicon Planar Transistors - SIEMENS AKTIENGESELLSCHAF - 2 N 2 9 0 4 and 2 N 2 9 0 5 are epitaxial PNP silicon planar transistors in TO 39 case 5 C 3 DIN 41 8 7 3 . The collector is electrically connected to the case. The transistors are

AF4505

Abstract: transistor BF 502 Q U 31U transistor s250
Contextual Info: ESC D • 023SbOS ÛQQ45GS T BISIEG ; 7^-5/' 2 / NPN Silicon RF Transistor SIEMENS BF502 A K T I E N G E S E L L S C H A F >4505 0 - | BF 5 0 2 is an NPN silicon planar RF transistor in TO 9 2 plastic package 1 0 A 3 D I N 4 1 86 8 .

Germanium power

Abstract: gpb19
Contextual Info: 2SC D Bi 023SbOS DÜQ4QÖ3 ^ M S I Z G PNP Germanium UHF Transistor A F2 8 9 _ SIEMENS AKTIENGESELLSCHAF - ~ f-3 l-D 7 AF 2 8 9 is a germanium PNP UHF Planartransistor with passivated surface in low-capacitance 5 0 B 3 DIN 4 1 8 6 7 plastic package similar to T 0 119. This transistor is particularly intended

smd transistor WF

Abstract: transistor smd wf TRANSISTOR SMD a43 SMD transistor JD va5 smd 4E smd diode transistor t5c smd t5c
Contextual Info: SIEMENS A K T I EN G E S E LL S C H AF 4?E D • 023SbOS S IE M E N S QD27317 2 *SIE6 SFH6106 2.8 kV TRIOS* OPTOCOUPLERS HIGH RELIABILITY Package Dimensions mm D E S C R IP T IO N * Isolation Test Voltage: 2800 V * High Current Transfer Ratios at 10 mA: 40-320%

transistor k 975

Abstract: c 879 transistor afe 1000 BD880 darlington bd 876 BD876 d966 transistor bd 975 transistor BD878 BD 875
Contextual Info: 2SC » • 023SbOS 0QGH421 3 ■ S I E 6 - ' NPN Silicon Planar Darlington Transistors SIEMENS AKTIEN6ESELLSCHAF 21 T-33-29 BD 875 BD 877 BD 879 ° BD 875, BD 877, and BD 879 are epitaxial NPN silicon planar darlington transistors in TO 126 plastic package 12 A 3 DIN 41869, sheet 4 . These darlington transistors

Contextual Info: 47E D • 023SbOS □G3425&#39;ì 7 ■ S I E G SIEM ENS SIEMENS AKTIENGESELLSCHAF 'T - '- n - t n - c n 5 V-Modulator TDA 5664 Preliminary Data Bipolar 1C Function Monolitic integrated circuit for use as a modulator in the 30 to 860 MHz range. Application Video recorders, cable converters, cable TV head stations,

Contextual Info: - 1 ! 2SC » • 023SbOS 0004701 I H S I E 6 u‘ NPN Silicon RF Broadband Transistor SIEMENS AKTIENfiESELLSCHAF . D T~3/~13 BFT 12 —1 BFT 12 is an epitaxial NPN silicon planar RF transistor in a plastic package similar to