Q01B3 Search Results

Hall Siemens sbv 525

Abstract: K2487 Hall Siemens hall generator siemens hall generator siemens hall probe siemens sbv
Contextual Info: 2^ T> • 023SbOS Q01b3?l ô H S I E 6 Field Probe for Measurements in Small Gaps S B V 525 SIEMENS AKTIENGESELLSCHAF - The S B V 525 is a hall generator of InAs semiconductor material designed for measuring magnetic fields in small gaps. S B V 5 25

SBV566

Abstract: hall generator K2488 Hall Siemens sbv 566 siemens hall ferrite P Ferrite Siemens Siemens Hall siemens hall generator
Contextual Info: D • 023SbOS Q01L373 1 ISIE6 Ferrite Mounted Hall Generator SBV 566 SIEMENS AKTIEN6ESELLSCHAF - Features _LL • Compact size • High sensitivity J= = Q □2.WW»7.S- Typical ap p licatio n s • Current sensing • Position sensing - 12.1

Contextual Info: y • UNITRODE 27 - Line SCSI Terminator With Split Reverse Disconnect h PRELIMINARY FEATURES • Complies with SCSI, SCSI-2, SCSI-3 and FAST-20 Ultra Standards • 2.5pF Channel Capacitance During Disconnect DESCRIPTION UCC5621 provides 27 lines of active termination for a SCSI (Small

uart 8051

Abstract: rs 485 multidrop with 8051 microcontroller 8051 vs pic microcontroller microcontroller 8051 traffic light pic 8051 ECS-36-18-4 square wave generator by 8051 RCV51
Contextual Info: 19-1259: Rev0; 7/97 yki>jxi>ki SPI/Microwire-Compatible UART in QSOP-16 _ General Description The MAX3100 includes a crystal oscillator and a baudrate generator with software-programmable divider ratios for all common baud rates from 300 baud to 230k baud.

m6376

Abstract: oki m6376 msm6376 J3E diode oki msm6376 oki voice synthesizer msm6375 diode i0-i6 7b424 oscV16 ADPCM SPEECH SYNTHESIZER LSIs
Contextual Info: O K I Semiconductor MSM6376_ A D P C M S P EE C H S Y N TH E S IZE R W ITH EXTERNAL R O M G ENER AL D ES C R IP TIO N MSM6376 is a tw o-channel m ixing ADPCM speech synthesizer LSI using u p to 16 M-bit external speech data storage, such as ROM,

Contextual Info: MITSUBISHI RF POWER MODULE M67749HR 440~470MHz, 12.5V, 7W, FM PORTABLE RADIO OUTLINE DRAWING Dimensions in mm BLOCK DIAGRAM ® G H H - PIN : © P in : RF INPUT ® V C C I : 1st. DC SUPPLY @ VBB : BASE BIAS @ VCC2 : 2nd. DC SUPPLY ®PO : RF O UTPUT ® G N D : FIN

Contextual Info: • b ab aza GOlbai? Tfi s ■ m m M IT S U B IS H I m ic r o c o m p u t e r s M 37416M 2-XXXSP/FP p r e lim in a r y Notice: T h i s is not a final specification. So m e param etric lim its a re suhject to change. |“| I T S U B I S H I MI C M P T R / M I P R C

Contextual Info: Light Emitting Diodes High luminance, small LEDs <j> 5.0 mm SLA-560/SLA-570/SLA-580 Series The SLA-560, SLA-570 and SLA-580 series are high luminance LEDs which give you a choice of narrow to wide viewing angles. Two red types and one green type are available in three

Contextual Info: PRELIMINARY MT28F400B1 256K x 16, 512K x 8 FLASH MEMORY MICRON M QUANTUM DEVICES, INC. FLASH MEMORY 256K x 16, 512K x 8 S martV oltage , BOOT BLOCK FEATURES • Seven erase blocks: 16KB/8K-word boot block protected Two 8KB/4K-word parameter blocks Four main memory blocks

Contextual Info: SONY CXD2586R/-1 CD Digital Signal Processor with Built-in Digital Servo and DAC Description The CXD2586R/-1 is a digital signal processor LSI for CD players. This LSI incorporates the digital servo, digital filter and 1-bit DAC. Features • All digital signal processing during playback is

Contextual Info: SAM S UN G E L E C T R O N I C S INC b?E D KM48C2000L/LL • 7^4142 OOlbSn b3b H S M ä K CMOS DRAM 2 M x 8 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM48C2000L/LL is a C MOS high speed 2,097,152 b itx S Dynam ic Random Access Memory, it's

Contextual Info: DS1215 DALLAS SEMICONDUCTOR DS1215 Phantom Time Chip FEATURES PIN ASSIGNMENT • K eeps track of hundredths o f seconds, seconds, min­ utes, hours, days, d ate of th e m onth, m onths, and years • Adjusts for m onths with fe w er than 31 days • Leap y e a r autom atically corrected up to 2 1 0 0

MSM63P74-02

Abstract: MSM63P74 oki voice synthesizer msm6375 18-PIN 20-PIN diode i0-i6
Contextual Info: O K I Semiconductor MSM6 3 P7 4 -0 2 / 0 5 / 0 7 / 12 512Kbit OTP BUILT-IN VOICE SYNTHESIS LSI GENERAL DESCRIPTION T he M SM 63P74 is a sin g le -c h ip CM OS ADPCM speech synthesizer LSI that has a onchip OTP One tim e PROM for speech data storage- This LSI is com patible w ith the

P-Channel Depletion Mosfets

Abstract: DG189BP 0g190 CMJB DG189AR P-Channel Depletion JFET dg190
Contextual Info: S I L I C O N I X 3 3 E I N C V • U til 89/ 190/191 High-Speed Drivers with Dual SPDT JFET Switches Ô E 5 4 7 3 5 0 Q l b 3 ö 2 S i S I X f ^ S ilic a n ix incc :orparated FEATURES BENEFITS APPLICATIONS • Constant ON-Reslstance Over Entire Analog Range

diode SM 78A

Abstract: AR-761 anawriter
Contextual Info: O K I Semiconductor MSM6378A/MSM6379 OTP BUILT-IN VOICE SYNTHESIS LSI GENERAL DESCRIPTION The M SM6378A/MSM6379 is an ADPCM voice synthesis LSI w ith a built-in one-tim e PROM OTP . The MSM6378A/MSM6379 reproduces the speech data, w hich the user h as a n a ly z e d a n d r e c o rd e d u s in g th e

Contextual Info: Light Emitting Diodes Small rectangular LEDs 2 X 5 mm SLB-25 Series T he SLB -25 series are 2 X 5 mm rectang ular LEDs •E x te rn a l dimensions (Unit: mm) with a high luminous efficiency. They are available in two colors, red and green, and are suitable for use in a

Contextual Info: Light Emitting Diodes Rectangular LEDs 2 X 4 mm SLB-24 Series T h e SLB -24 series are 2 X 4 mm rectang ular LEDs •E x te rn a l dimensions (Unit: mm) with a high luminous efficiency. They are available in two colors, red and green, and are suitable for use in a

M37421M6

Contextual Info: bSMTÛEÔ D D lb 3 7 7 351 *11174 M IT SU B ISH I MICROCOMPUTERS M 3 7 4 2 1 M 6 -X X X S P /F P n iT S U B IS H IC n iC U P T R /n iP R C b lE n S IN G L E -C H IP 8 -B IT C M O S M IC R O C O M P U T E R DESCRIPTION The M 37421M 6-XXXSP is a s in g le -c h ip m icro com p uter d e ­

2SC2582

Contextual Info: Power Transistors 2SC2582 2SC2582 Silicon NPN Epitaxial Planar Type Package Dimensions AF Power Amplifier • Feature • L arge collector pow er dissipation Pc Absolute Maximum Ratings (Ta=25°C) Item Symbol Collector-base voltage ' Value Unit VcBO 45 V

Contextual Info: SAMSUNG ELECTRONICS INC fc>7E ] • 7c]fc,l4]i42 D01b32ß 2fei7 KM48C21OOL/LL SMGK CMOS DRAM 2 M x 8 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM48C21 OOL/LL is a CMOS high speed 2,097,152 b itx s Dynamic Random Access Memory. It's

Contextual Info: UC5605 UNITRODE 9-Line Low Capacitance SCSI Active Terminator FEATURES DESCRIPTION • Reverse Disconnect • Complies with SCSI, SCSI-2 and SPI-2 Standards The UC5605 provides 9 lines of active termination for a SCSI Small Computer Systems Interface parallel bus. The SCSI standard recommends active termi­

DL05L

Abstract: lm 739 dl051d ODCSXE04 180 nm CMOS standard cell library AMI DL021D M91C360 ami 0.6 micron micron37 ami equivalent gates
Contextual Info: Library Characteristics AMI AMERICAN MICROSYSTEMS, INC Description • Cost driven architecture: - Offers both 2 and 3 level metal interconnect to provide the lowest user cost for the number of gates and pads required. - Compiled memory blocks on standard cells are

5nbb

Abstract: HI-201HS
Contextual Info: I9 0 H 7 rtn v I. 1 1/9-1 Æ / I X I Æ I High-Speed, CMOS, Quad, SPST Analog Sw itch _Features ♦ QuarantMKl Slng *-Supply Opwstlpn: +12V to +20V Maxim's new high-voltage silicon-gate technology in­ creases the maximum supply-voltage rating to 44V. This

LT332

Abstract: T74LS373B1
Contextual Info: s G S-THOfISON D7 E D | 7 ^ 2 3 7 0 D i t 32e] 5 H LOW POWER SCH0TTKY INTEGRATED CIRCUITS • T54LS373 T74LS373 ^ 67C 16458 T -4 6 -Û 7 -11 O CTAL TRANSPARENT LATCH W ITH 3-S TA TE OUTPUTS DESCRIPTION The T54LS373/T74LS373 consists of eight latches with 3-state outputs for bus organized system ap­