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    2N3108 Price and Stock

    onsemi 2N3108

    TRANS NPN 60V TO39
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    DigiKey 2N3108 Bulk 200
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    Central Semiconductor Corp 2N3108

    Trans GP BJT NPN 60V 150mA 3-Pin TO-39 Box - Boxed Product (Development Kits) (Alt: 2N3108)
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    Avnet Americas 2N3108 Box 500
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    Central Semiconductor Corp 2N3108 TIN/LEAD

    Transistor GP BJT NPN 60V 3-Pin TO-39 Box - Boxed Product (Development Kits) (Alt: 2N3108 TIN/LEAD)
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    Mouser Electronics 2N3108 TIN/LEAD
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    Central Semiconductor Corp 2N3108 PBFREE

    Transistor GP BJT NPN 60V 3-Pin TO-39 Box - Boxed Product (Development Kits) (Alt: 2N3108 PBFREE)
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    Avnet Americas 2N3108 PBFREE Box 500
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    Mouser Electronics 2N3108 PBFREE 113
    • 1 $3.67
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    New Jersey Semiconductor Products, Inc. 2N3108

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    Bristol Electronics 2N3108 10,652 1
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    2N3108 Datasheets (38)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N3108 Central Semiconductor Leaded Small Signal Transistor General Purpose - Pol=NPN / Pkg=TO5 / Vceo=60 / Ic=1 / Hfe=20min / fT(Hz)=70M / Pwr(W)=0.8 Original PDF
    2N3108 Semelab Bipolar NPN Device in a Hermetically Sealed TO39 Metal Package - Pol=NPN / Pkg=TO5 / Vceo=60 / Ic=1 / Hfe=20min / fT(Hz)=70M / Pwr(W)=0.8 Original PDF
    2N3108 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
    2N3108 Central Semiconductor NPN METAL CAN - SWITCHING AND GENERAL PURPOSE Scan PDF
    2N3108 Crimson Semiconductor Transistor Selection Guide Scan PDF
    2N3108 Diode Transistor SMALL SIGNAL TRANSISTORS Scan PDF
    2N3108 Fairchild Semiconductor NPN small signal general purpose amplifier & satureted switch. - Pol=NPN / Pkg=TO5 / Vceo=60 / Ic=1 / Hfe=20min / fT(Hz)=70M / Pwr(W)=0.8 Scan PDF
    2N3108 General Transistor Small Signal Transistor Selection Guide Scan PDF
    2N3108 Micro Electronics NPN SILICON AF MEDIUM POWER AMPLIFIERS AND SWITCHES - Pol=NPN / Pkg=TO5 / Vceo=60 / Ic=1 / Hfe=20min / fT(Hz)=70M / Pwr(W)=0.8 Scan PDF
    2N3108 Micro Electronics Semiconductor Device Data Book Scan PDF
    2N3108 Micro Electronics Semiconductor Devices Scan PDF
    2N3108 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N3108 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N3108 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N3108 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N3108 Unknown GE Transistor Specifications Scan PDF
    2N3108 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N3108 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2N3108 Unknown Transistor Replacements Scan PDF
    2N3108 Unknown Shortform Transistor PDF Datasheet Short Form PDF

    2N3108 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N3108

    Abstract: No abstract text available
    Text: 2N3108 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 60V 0.41 (0.016) 0.53 (0.021)


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    PDF 2N3108 O205AD) 1-Aug-02 2N3108

    Untitled

    Abstract: No abstract text available
    Text: ,U na. TELEPHONE: 973 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. (212) 227-6005 FAX: (973) 376-8960 2N3108-2N3110 GENERAL PURPOSE AMPLIFIERS AND SWITCHES The 2N3108 and 2N3110 are NPN transistors mounted in TO-39 metal package. Thev are intended for large signal, low noise industrial applications.


    Original
    PDF NPN2N3108-2N3110 2N3108 2N3110 2N3108 2N3110 20MHz

    Untitled

    Abstract: No abstract text available
    Text: 2N3108 NPN small signal general purpose amplifier & satureted switch. . 1 of 1 Home Part Number: 2N3108 Online Store 2N3108 Diodes NPN s m all s ignal general purpo s e am plifier & s at uret ed s w it c h.


    Original
    PDF 2N3108 com/2n3108 2N3108

    2N3108

    Abstract: No abstract text available
    Text: 2N3108 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 60V 0.41 (0.016) 0.53 (0.021)


    Original
    PDF 2N3108 O205AD) 17-Jul-02 2N3108

    Untitled

    Abstract: No abstract text available
    Text: 2N3108 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 60V 0.41 (0.016) 0.53 (0.021)


    Original
    PDF 2N3108 O205AD) 19-Jun-02

    k2645

    Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
    Text: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt


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    PDF MK135 MK136 MK137 MK138 MK139 MK140 Mk142 MK145 MK155 157kr k2645 k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417

    2N5225

    Abstract: 2N4033 2N5042
    Text: Medium Power Amplifiers and Switches H,re COMPLE­ C* *T max MENTARY min MHz (M at) TYPE (V) Ic (A) 10 150 100 100 100 10 10 5 5 5 0.4 0.5 0.5 0.5 0.5 0.1 0.15 0.5 0.5 0.5 100 60 150+ 100 100 10 12 20 20 20 2N3108 2N3020 300 300 140 250 150 100 100 150 150


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    PDF 2N3794 2N3945 2N4029 2N4030 2N4031 2N4032 2N4033 2N4036 2N4037 2N4234 2N5225 2N5042

    2N3107

    Abstract: N3107 2n3110 TS37 2N311
    Text: 30 E D • 7=^537 0031157 ê SGS-THOMSON ^□OML| ï[R] g [MDOi T '3 S -1 < Ì 2N3107/2N3108 2N3109/2N3110 S G S-TH 0 MS 0 N GENERAL PURPOSE AMPLIFIERS AND SWITCHES D ESCRIPTIO N The 2N3107, 2N3108, 2N3109 and 2N3110 are silicon planar epitaxial NPN transistors in Jedec


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    PDF 2N3107/2N3108 2N3109/2N3110 2N3107, 2N3108, 2N3109 2N3110 T-35-19 2N3107 N3107 TS37 2N311

    pic 08m

    Abstract: 2N3055-7 2N3171 2N3172 2N3055H 2N3055-5 2N3055-6 2N3055 TO220 to-53 2N3411
    Text: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES Type_No 2N3053SM 2N3054 2N3055 2N3055 CECC 2N3055/5 2N3055/6 2N3055/7 2N3055A 2N3055E 2N3055E CECC 2N3055E-SM 2N3055H 2N3108 2N3109 2N3110 2N3114 2N3167 2N3168 2N3169 2N3170 2N3171 2N3172 2N3173 2N3174


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    PDF 2N3053SM 2N3054 2N3055 2N3055/5 2N3055/6 2N3055/7 2N3055A 2N3055E pic 08m 2N3055-7 2N3171 2N3172 2N3055H 2N3055-5 2N3055-6 2N3055 TO220 to-53 2N3411

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    PDF

    2N3568

    Abstract: 2N3569 2N702 2N2406 2N2539 2N2407 2N3565 2N3638 2N1470 2N2224
    Text: J325835_4 ADVANCED SEMICONDUCTOR SILICON A D V A N C E D TRANSISTORS SEMICONDUCTOR P D @ T c = 25°C DEVICE TYPE NO. POLARITY 2N329A 2N332 2N333 2N334 2N335 2N336 2N337 2N338 2N339 2N340 2N341 2N342 2N343 2N478 2N479 2N479A 2N480 2N480A 2N541 2N542 2N543 2N545


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    PDF 2N329A 2N332 2N333 2N334 2N335 2N336 2N337 2N338 2N339 2N340 2N3568 2N3569 2N702 2N2406 2N2539 2N2407 2N3565 2N3638 2N1470 2N2224

    2N4033

    Abstract: 2N3702 2N3794 2N4235 2N3107 2N3115 2N3073 2N3081 2N3108 2N3109
    Text: Medium Power Amplifiers and Switches TYPE NO. >- C A SE a < _i o CL M AXIM UM R A T IN G S Pd mW •c H V C E (S A T ) FE 'c (A ) V C EO (V ) min max max 'c f T min Cob C O M PLE­ max M EN TA RY TYPE (m A | V CE (V ) (V ) (A ) (MHz) (pF) 2N3073 2N3081 2N3107


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    PDF 2N3073 2N3081 2N3107 2N4032 2N3108 2N4030 2N3109 2N4033 2N3110 2N3115 2N4033 2N3702 2N3794 2N4235

    2n3298

    Abstract: 2N2360 2n2694 2N3208 2N321 2N321D IN219 2N2195B 2n2888 2N1613
    Text: jGmitronicr Sem itronics Corp. SEMICONDUCTORS metal can transistors cont’d silicon small signal transistors Maximum Ratings O m ite Type Package Po V cb VC E Ambient Volts Volts mW Electrical Characteristics @ 25 C V c e Sat @ Ic /ls V eb 1>FE Volts Min/Max


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    PDF 2N1613 2N16I3A 2N1613B 2N17I1 2N17IIA 2N3725A 2N3947 2N40B0 2N4137 2N4207 2n3298 2N2360 2n2694 2N3208 2N321 2N321D IN219 2N2195B 2n2888

    2N4033

    Abstract: transistor 2N4033 2N4030 2N3020 2N4032 2N3019 2N3107 2N3108 2N4031 pnp for 2n3019
    Text: 2N4030 2N4033 through PNP SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES iS K 4 •* I CASE TO-39 THE 2N4030 THROUGH 2N4033 ARE PÏÏP SILICON PLANAR EPITAXIAL TRANSISTORS FOR AF MEDIUM POWER DRIVERS AND OUTPUTS, AS WELL AS FOR SWITCHING APPLICA­ TIONS UP TO 1 AMPERE. THE 2N4030, 2H4031, 2N4032,


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    PDF 2N4030 2N4033 2N4033 2N4030, 2N4031, 2N4032, 2N3108, 2N3020, transistor 2N4033 2N3020 2N4032 2N3019 2N3107 2N3108 2N4031 pnp for 2n3019

    TDA0161 equivalent

    Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
    Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:


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    PDF

    N3020

    Abstract: 2N2951 2N3114 2N3301 ST 2N3053 2N2219 2N2219A 2N2220 2N2221 2N2221A
    Text: central se mi co nd u ct or 1989963 CENTRAL SEMICOND U C T O R " bï D F | n a n t . 3 oooosit, i " _ 61C 00 216 NPN M E TA L CAN - SW ITCHING A N D G ENER AL PURPOSE Cont'd. < o 00 — 21 VCE V eb h FE at •c V CE V V V min max mA V 2N2219 2N2219A 2N2220


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    PDF 2N2219 2N2219A 2N2220 2N2221 2N2221A 2N2222 2N2222A 2N2236 CBR30 0000S23 N3020 2N2951 2N3114 2N3301 ST 2N3053

    2N4033

    Abstract: 2N2905 2N3702
    Text: Medium Power Amplifiers and Switches MAXIMUM RATINGS POLA­ RITY CASE 2N2838 2N2868 2N2897 2N2904 2N2905 P N N P P 2N2905A 2N2906 2N2906A 2N2907 2N2907A TYPE NO. H FE Vc, COMPLE­ C* h min max MENTARY MHz (MHz) TYPE max (mA) VcE (V) (V) (A) 225 120 200 120


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    PDF 2N2838 2N2868 2N2897 2N2904 2N2905 2N2905A 2N2906 2N2906A 2N2907 2N2907A 2N4033 2N3702

    transistor t05

    Abstract: N2907 N2907A 2N3040 t05 transistor 2N2927A 2N2280 2N3064 2N1921 2N3058
    Text: DIODE TRANSISTOR CO INC AM de ! 5flMfl35g D O D O m O 1 | o/ DIODE TRANSISTOR CD.i \ C. (201) 688-0400 • Telex: 139-385 • Outside NY & NJ area call TO LL FR EE 800-526-4581 FAX No. 201-575-5883 SILICON NPN LOW POWER TRANSISTORS DEVICES PKG DEVICES 2N327A


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    PDF 5flMfl35g DETRdf\J515TQR 2N327A N328A 2N329A 2N330 2N726 2N863 2N939 2N945 transistor t05 N2907 N2907A 2N3040 t05 transistor 2N2927A 2N2280 2N3064 2N1921 2N3058

    TRIAC 97A6

    Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
    Text: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1


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    PDF OD-80 OD-323 OT-23 OT-89 OT-143 OT-223 OT-323 TRIAC 97A6 S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C

    BC207b

    Abstract: BC113 SGS BC208A BC209B BC207A BF257 BC113 BC114 BC209 BC208 transistor
    Text: Fairchild Sem iconductors Semiconductors Silicon Small Signal Transistors NPN Low Level, Low Noise Amplifier Transistors P lastic P ack ag e T 0 9 2 , T O IM REFERENCE TABLE Max Ratings Characteristics @ 25‘ C Code V c e o Pt o t Volts T a — 25*C mW


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    PDF BC113 35289X BC114 35Z90C BC115 6291A BC207 35292X BC207A 35293H BC207b BC113 SGS BC208A BC209B BF257 BC209 BC208 transistor

    C744

    Abstract: BC301-6 cp409 SGS-ATES c426 BFY72 sgs c426 Transistor 2N3866 BC119 sgs-ates BFR97
    Text: S G S -A T E S Semiconductors Transistors -N P N N P N Medium Po w er Transistors R EFEREN CE T A B L E 0.8 6* 6* «* 3* o u_ C ode BC119 BC300 BC301 BC302 BFR36 M ax P tot @ T * m b = 25 -C W 30 80 60 45 30 Max lc (A ) 1 7 7 7 0.3 @ lc (m A ) Min fr (MHz)


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    PDF BC119 34546C BC300 31624X BC301 31625R BC302 BFR36 30946B BFR97 C744 BC301-6 cp409 SGS-ATES c426 BFY72 sgs c426 Transistor 2N3866 sgs-ates

    AL102 ATES

    Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
    Text: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible


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    PDF Trans-611 DT1521 2N2270 BC107-182KS ESC182KAS ESC182KBS ESC1Q8-183KS EiC183KBS 8C183KCS BC109-184KS AL102 ATES 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29

    2N1613 fairchild

    Abstract: TT 2222 npn BC119 2n2218 2B 2N915 2N2369 2N2369A 2N914 2n3054 BSX26
    Text: Fairchild Sem iconductors Se m ico n d ti^ H n Silicon Small Signal Transistors NPN Silicon High Speed Saturated Switching Transistors M e ta l C a n T O IS R EFEREN CE T A B L E For medium speed - see General P u rp o se Section. C H A R A C T E R I S T IC S @ 25"C


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    PDF BSX20 35250H BSX26 35251F 2N914 35252D 2N2369 35253B 2N2369A 35254X 2N1613 fairchild TT 2222 npn BC119 2n2218 2B 2N915 2n3054

    Untitled

    Abstract: No abstract text available
    Text: small signal Transistors D ESCR IPTIO N Vc b O VC EO v EB O V (V) (V) *V C ER hFE 'C B O v C B O ftiA ) (V) @ lc (m A) (V) m TY P E NO. < o T O -39 Case V C E (S A T) ® *C (V) (m A) *>CEO h C0 b ton toff NF (M H z) <PF) (ns) (ns) (dB ) *TY P *TY P


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    PDF 2N656A 2N657A 2N696 2N697A 2N698 2N699B 2N1053 2N1116 2N1117 2N1118