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RAF Electronic Hardware M2992-N-3.0-2.0-2.0 METRIC SHOULDER WASHERPLAIN NYLO
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DigiKey	M2992-N-3.0-2.0-2.0	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Central Semiconductor Corp 2N3020 Bipolar Transistor NPN High Current 80V 1A 3-Pin TO-39 Through Hole Box - Boxed Product (Development Kits) (Alt: 2N3020)
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Verical	2N3020		5		4	1 - 10 $2.0976 100 $2.0976 1000 $2.0976 10000 $2.0976	Buy Now
Arrow Electronics	2N3020		5	34 Weeks	1	1 - 10 $1.9171 100 $1.7411 1000 $1.717 10000 $1.717	Buy Now
Central Semiconductor Corp 2N3020 PBFREE Bipolar Transistors - BJT NPN Gen Pur SS
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New Jersey Semiconductor Products, Inc. 2N3020
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Bristol Electronics	2N3020		964		2	1 - 10 $2.7664 100 $1.9863 1000 $1.745 10000 $1.745	Buy Now
Philips Semiconductors 2N3020
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2N3020 Datasheets (57)

Part	Manufacturer	Description	Datasheet Type	PDF
2N3020	Central Semiconductor	NPN SILICON TRANSISTOR	Original	PDF
2N3020	Continental Device India	NPN SILICON PLANAR EPITAXIAL TRANSISTORS	Original	PDF
2N3020	Semelab	Bipolar NPN Device in a Hermetically Sealed TO39 Metal Package - Pol=NPN / Pkg=TO39 / Vceo=80 / Ic=1 / Hfe=30min / fT(Hz)=80M / Pwr(W)=0.8	Original	PDF
2N3020	Advanced Semiconductor	Silicon Transistor Selection Guide	Scan	PDF
2N3020	Boca Semiconductor	GENERAL TRANSISTOR NPN SILICON - Pol=NPN / Pkg=TO39 / Vceo=80 / Ic=1 / Hfe=30min / fT(Hz)=80M / Pwr(W)=0.8	Scan	PDF
2N3020	Central Semiconductor	NPN METAL CAN - SWITCHING AND GENERAL PURPOSE	Scan	PDF
2N3020	Central Semiconductor	BJT, NPN, High Current Transistor, IC 1A - Pol=NPN / Pkg=TO39 / Vceo=80 / Ic=1 / Hfe=30min / fT(Hz)=80M / Pwr(W)=0.8	Scan	PDF
2N3020	Continental Device India	Semiconductor Device Data Book 1996	Scan	PDF
2N3020	Crimson Semiconductor	Transistor Selection Guide	Scan	PDF
2N3020	Diode Transistor	SMALL SIGNAL TRANSISTORS	Scan	PDF
2N3020	Fairchild Semiconductor	NPN small signal general purpose amplifier. - Pol=NPN / Pkg=TO39 / Vceo=80 / Ic=1 / Hfe=30min / fT(Hz)=80M / Pwr(W)=0.8	Scan	PDF
2N3020	Fairchild Semiconductor	Full Line Condensed Catalogue 1977	Scan	PDF
2N3020	General Diode	Transistor Selection Guide	Scan	PDF
2N3020	General Transistor	Small Signal Transistor Selection Guide	Scan	PDF

2N3020	Great American Electronics	Silicon NPN transistor	Scan	PDF
2N3020	Micro Electronics	NPN SILICON AF MEDIUM POWER AMPLIFIERS AND SWITCHES - Pol=NPN / Pkg=TO39 / Vceo=80 / Ic=1 / Hfe=30min / fT(Hz)=80M / Pwr(W)=0.8	Scan	PDF
2N3020	Micro Electronics	Semiconductor Devices	Scan	PDF
2N3020	Micro Electronics	Semiconductor Device Data Book	Scan	PDF
2N3020	Motorola	Motorola Semiconductor Datasheet Library	Scan	PDF
2N3020	Mullard	Quick Reference Guide 1977/78	Scan	PDF

2N3020 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
power transistor 2n3020 Abstract: 2N3019 and applications Text: 2N3019 2N3020 NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3019, 2N3020 types are NPN silicon transistors designed for general purpose amplifier applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: TA=25°C	Original	PDF	2N3019 2N3020 2N3019, 150mA, 150mA 500mA 20MHz power transistor 2n3020 2N3019 and applications
2N3020 Abstract: No abstract text available Text: 2N3020 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 80V 0.41 (0.016) 0.53 (0.021)	Original	PDF	2N3020 O205AD) 1-Aug-02 2N3020
2n3019 Abstract: No abstract text available Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N3019 2N3020 TO-39 Metal Can Package Designed for use in General Purpose Amplifier and High Speed Switching Applications	Original	PDF	2N3019 2N3020 C-120 2N3019 20Rev160102D
Untitled Abstract: No abstract text available Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR 2N3019 / 2N3020 TO-39 Metal Can Package General Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage Collector Base Voltage	Original	PDF	2N3019 2N3020 C-120 040406E
2N3019 Abstract: 2N301 2N3019-2N3020 2N3020 2N302 Text: 2N3019 2N3020 HIGH CURRENT, HIGH FREQUENCY AMPLIFIERS DESCRIPTION The 2N3019 and 2N3020 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case, designed for high-current, high-frequency amplifier applications. They feature high gain and low saturation	Original	PDF	2N3019 2N3020 2N3019 2N3020 2N301 2N3019-2N3020 2N302
2N3019 Abstract: 2n3019 equivalent 2N3020 2N3019 and applications 2n3019 transistor 2n30201 Text: NPN 2N3019 – 2N3020 SILICON PLANAR EPITAXIAL TRANSISTORS The 2N3019 and 2N3020 are NPN transistors mounted in TO-39 metal case . They are intended for high-current, high-frequency amplifier applications. They feature high gain and low saturation voltages.	Original	PDF	2N3019 2N3020 2N3019 2N3020 2n3019 equivalent 2N3019 and applications 2n3019 transistor 2n30201
Untitled Abstract: No abstract text available Text: 2N3020 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 80V 0.41 (0.016) 0.53 (0.021)	Original	PDF	2N3020 O205AD) 19-Jun-02
2N3019 CDIL Abstract: 2N3020 SPECIFICATIONS 2n3019 equivalent 2N3020 cdil 2n3019 equivalent 2N3019 CDIL 2N3019 Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N3019 2N3020 TO-39 Metal Can Package Designed For Use in General Purpose Amplifier And High Speed Switching Applications.	Original	PDF	2N3019 2N3020 C-120 2N3439-40Rev180701 2N3019 CDIL 2N3020 SPECIFICATIONS 2n3019 equivalent 2N3020 cdil 2n3019 equivalent 2N3019 CDIL 2N3019
2N3020 Abstract: 2N3019 Text: 2N3019 2N3020 JL PHILIPS INTERNATIONAL SbE T> I 7110flSb D0L»2b40 37^ • PHIN 7= 35" SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in TO-39 metal envelopes intended for use as amplifiers and in switching circuits. QUICK REFERENCE DATA Collector-base voltage open emitter	OCR Scan	PDF	2N3019 2N3020 7110flSb 711002b 00M2fci42 2N3020
Untitled Abstract: No abstract text available Text: m 2N3020 \ \ SILICON NPN TRANSISTOR DESCRIPTION: The 2N3020 is Designed for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS 1.0 A lc V 80 V ce P diss 5.0 W @ Tc = 25 °C Tj -65 °C to +200 °C stg -65 °C to +200 °C T 16.5 °C/W 0JC	OCR Scan	PDF	2N3020 2N3020
2N5225 Abstract: 2N4033 2N5042 Text: Medium Power Amplifiers and Switches H,re COMPLE C* *T max MENTARY min MHz (M at) TYPE (V) Ic (A) 10 150 100 100 100 10 10 5 5 5 0.4 0.5 0.5 0.5 0.5 0.1 0.15 0.5 0.5 0.5 100 60 150+ 100 100 10 12 20 20 20 2N3108 2N3020 300 300 140 250 150 100 100 150 150	OCR Scan	PDF	2N3794 2N3945 2N4029 2N4030 2N4031 2N4032 2N4033 2N4036 2N4037 2N4234 2N5225 2N5042
Transistor D 798 Abstract: No abstract text available Text: ÀSII 2N3020 SILICON NPN TRANSISTOR DESCRIPTION: The 2N3020 is Designed for General Purpose Amplifier and Switching Applications. PACKAGE STYLE TO- 39 MAXIMUM RATINGS Ie 1.O A Vc e 8O V Pd is s 5.O W @ Te " 25 0C Tj -65 0C to +2OO 0C Ts t g -65 0C to +2OO 0C	OCR Scan	PDF	2N3020 2N3020 Transistor D 798
2N3053 Abstract: 2N3019 2N3700 2N3020 2N3019 MOTOROLA motorola 2N3020 test 2N3700 2N3053 motorola 2N3053A 336 motorola Text: 2N3019* 2N3020 M A X IM U M R A T IN G S Symbol 2N3019 2N3020 2N3700 Unit Collector-Emitter Voltage VCEO 80 80 Vdc Collector-Base Voltage VCBO 140 140 Vdc Rating Emitter-Base Voltage CA SE 79-04, STYLE 1 TO-39 TO-205AD V e BO 7.0 7.0 Vdc Collector Current — Continuous	OCR Scan	PDF	2N3019 2N3020 2N3700 2N3020 2N3700 2N3019* O-205AD) 2N3053 2N3019 MOTOROLA motorola 2N3020 test 2N3700 2N3053 motorola 2N3053A 336 motorola
2n3019a Abstract: 2n3019 Text: 2N3019 2N3020 Z A PHILIPS INTERNATIONAL 5bE D m 711GöSb DG42b4G 31e] HPHIN 7 = 3 5 "-/< ? SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in TO-39 metal envelopes intended fo r use as amplifiers and in switching circuits. Q UICK REFERENCE D A T A Collector-base voltage open em itter	OCR Scan	PDF	2N3019 2N3020 DG42b4G 2n3019a

Untitled Abstract: No abstract text available Text: 3QE D • 7^237 0031153 G T * 3s - is SGS-THOMSON [MOÛiiô&iOTlIRMOÛS 2N3019 2N3020 S G S-THOMSON HIGH CURRENT, HIGH FREQUENCY AMPLIFIERS DESCRIPTIO N The 2N3019 and 2N3020 are silicon planar epitax ial NPN transistors in Jedec TO-39 metal case, de signed for high-current, high-frequency amplifier	OCR Scan	PDF	2N3019 2N3020 2N3019 2N3020
2n3019 equivalent Abstract: 2N3053 equivalent BC140 equivalent BC141 equivalent 2n930 equivalent bcy59 equivalent BC107 equivalent transistors 2N328A BC109C NPN bcy31 Text: Discrete Devices Transistors Cont. General Purpose Amplifiers (Cont.) Electrical Characteristics @ 25° C Maximum Ratings Type Polarity PD Ambient mW 2N2897 NPN 2N2898 NPN NPN 2N2899 2N2900 2N3019 2N3020 2 N 3036 2N3053 NPN NPN NPN NPN NPN VCB Volts VCE	OCR Scan	PDF	2N2897 2N2898 2N2899 2N2900 2N3019 2N3020 2N3036 2N3053 2N329A BCY56 2n3019 equivalent 2N3053 equivalent BC140 equivalent BC141 equivalent 2n930 equivalent bcy59 equivalent BC107 equivalent transistors 2N328A BC109C NPN bcy31
pnp for 2n3019 Abstract: 2N4033 2N5020 2N3019 transistor 2N4033 2N3020 2N4031 BOX69477 Text: ! / 2N3019 2N3020 NPN SILICON AP MEDIUM POWER AMPLIFIERS & SWITCHES -a *4h 1 THE 2N3019, 2N3020 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR AF MEDIUM POWER DRIVERS AND OUTPUTS, AS WELL AS FOR SWITCH ING APPLICATIONS UP TO 1 AMPERE. THEY ARE COMPLEMENTARY TO THE PNP 2N4033, 2N4031.	OCR Scan	PDF	2N3019 2N3020 2N3019, 2N3020 2N4033, 2N4031. 800mW 150mA VCE-10V 500mA pnp for 2n3019 2N4033 2N5020 transistor 2N4033 2N4031 BOX69477
2N3019 MOTOROLA Abstract: 2N3019 2N3700 2N3020 motorola 2N3020 test 2N3700 2N3700 MOTOROLA 2N301 motorola 2N3019 2n3701 Text: Boca Semiconductor Corp. M A X IM U M R ATIN GS Symbol 2N3019 2N3020 2N3700 Unit C o lle ctor-E m itter V oltage VCEO 80 80 Vdc Collector-Base V oltage VCBO 140 140 Vdc Em itter-Base V oltage vebo 7.0 7.0 Vdc Rating C o lle ctor C u rrent — C o ntinuous	OCR Scan	PDF	2N3019 2N3020 2N3700 2N3020 2N3700 2N3019* 2N3019 MOTOROLA motorola 2N3020 test 2N3700 2N3700 MOTOROLA 2N301 motorola 2N3019 2n3701
2N3020 Abstract: No abstract text available Text: GAE GREAT AMERICAN ELECTROINCS 2N3020 Silicon NPN transistor 2N3020 is intended for high frequency amplifier applications. Package Type: TO-39 CÛ LU > ABSOLUTE IVAXIMUM RATINGS TCASE = 25°C SYMBOL Rating Collector-Emitter Voltage REB=3.0 KQ VcER Collector-Emitter Voltage	OCR Scan	PDF	2N3020 2N3020 30mAdc, 100jaAdc, 90Vdc, 150mAdc, 10Vdc
2n3700 Abstract: 2n3019 2N3019 MOTOROLA motorola 2N3019 Text: 2N3019* 2N3020 MAXIM UM RATINGS Sym bol 2N3019 2N3020 2N 3700 U n it C o lle ctor-E m itter V o ltage v CEO 80 80 Vdc C ollector-Base V o ltage V cB O 140 140 Vdc Em itter-Base V o ltage Vebo 7.0 7.0 Vdc 1.0 1.0 Ade Rating C o lle ctor C u rrent — C o ntinuous	OCR Scan	PDF	2N3019 2N3020 2N3019* 2N3020 O-205AD) 2N3700* O-206AA) 2N3700 2N3019 MOTOROLA motorola 2N3019
2N3019-2N3020 Abstract: No abstract text available Text: SGS-THOMSON R!tlD EæilLI(g'iri iD(SS 2N3019 2N3020 HIGH CURRENT, HIGH FREQUENCY AMPLIFIERS D E S C R IP T IO N The 2N3019 and 2N3020 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case, desi gned for high-current, high-frequency amplifier ap	OCR Scan	PDF	2N3019 2N3020 2N3020 2N3019-2N3020
2N3019A Abstract: 2N3501A Text: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL NPN TRANSISTOR TO-5/TO205AD/TO-39 PACKAGE DEVICE TYPE TO-5 T0205AD 2N697 2N1711 2N1613A 2N1893 2N2218A 2N2218AA 2N2219A 2N2219AA 2N2270 2N3019A 2N3020 2N3053A 2N3114 2N3300 2N3498A 2N3499A 2N3500A 2N3501A 2N3724 2N3725	OCR Scan	PDF	O-5/TO205AD/TO-39 T0205AD 2N697 2N1711 2N1613A 2N1893 2N2218A 2N2218AA 2N2219A 2N2219AA 2N3019A 2N3501A
pnp for 2n3019 Abstract: No abstract text available Text: r ! / 2N3019 2N3020 NPN SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES -A 1 S& THE 2N3019, 2N3020 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR AF MEDIUM POWER DRIVERS AND OUTPUTS, AS WELL AS FOR SWITCH ING APPLICATIONS UP TO 1 AMPERE. THEY ARE COMPLEMENTARY TO THE PNP 2N4033, 2N4031.	OCR Scan	PDF	2N3019 2N3020 2N3019, 2N3020 2N4033, 2N4031. 800mW 200OC 150mA VCE-10V pnp for 2n3019
2N3053 NPN transistor Abstract: BT2222A 2N22 BT2222 2N2897 2N2898 2N2899 2N2900 2N3019 2N3020 Text: Discrete Devices Transistors Cont. General Purpose Amplifiers (Cont.) Electrical Characteristics @ 25° C Maximum Ratings Type Polarity PD Ambient mW 2N2897 NPN 2N2898 NPN NPN 2N2899 2N2900 2N3019 2N3020 2 N 3036 2N3053 NPN NPN NPN NPN NPN VCB Volts VCE	OCR Scan	PDF	2N2897 2N2898 2N2899 2N2900 2N3019 2N3020 2N3036 2N3053 BT2946 2N2946 2N3053 NPN transistor BT2222A 2N22 BT2222

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RAF Electronic Hardware M2992-N-3.0-2.0-2.0

Central Semiconductor Corp 2N3020

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New Jersey Semiconductor Products, Inc. 2N3020

Philips Semiconductors 2N3020

2N3020 Datasheets (57)

2N3020 Datasheets Context Search

power transistor 2n3020

2N3020

2n3019

Untitled

2N3019

2N3019

Untitled

2N3019 CDIL

2N3020

Untitled

2N5225

Transistor D 798

2N3053

2n3019a

Untitled

2n3019 equivalent

pnp for 2n3019

2N3019 MOTOROLA

2N3020

2n3700

2N3019-2N3020

2N3019A

pnp for 2n3019

2N3053 NPN transistor