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Nisshinbo Micro Devices R3112N301C-TR-FE IC SUPERVISOR 1 CHANNEL SOT23-5
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	R3112N301C-TR-FE	Cut Tape	7,532		1	1 $0.52 10 $0.367 100 $0.285 1000 $0.24222 10000 $0.24222	Buy Now
	R3112N301C-TR-FE	Digi-Reel	7,532		1	1 $0.52 10 $0.367 100 $0.285 1000 $0.24222 10000 $0.24222	Buy Now
	R3112N301C-TR-FE	Reel	3,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.22973	Buy Now
Susumu Co Ltd RG2012N-3011-W-T5 RES SMD 3.01KOHM 0.05% 1/8W 0805
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RG2012N-3011-W-T5	Cut Tape	4,964		1	1 $0.89 10 $0.626 100 $0.427 1000 $0.27629 10000 $0.27629	Buy Now
	RG2012N-3011-W-T5	Digi-Reel	4,964		1	1 $0.89 10 $0.626 100 $0.427 1000 $0.27629 10000 $0.27629	Buy Now
Nisshinbo Micro Devices RP112N301D-TR-FE IC REG LINEAR 3V 150MA SOT23-5
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RP112N301D-TR-FE	Cut Tape	2,525		1	1 $1.01 10 $0.728 100 $0.5787 1000 $0.50062 10000 $0.50062	Buy Now
	RP112N301D-TR-FE	Digi-Reel	2,525		1	1 $1.01 10 $0.728 100 $0.5787 1000 $0.50062 10000 $0.50062	Buy Now
Nisshinbo Micro Devices R1172N301D-TR-FE IC REG LINEAR 3V 1A SOT23-5
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	R1172N301D-TR-FE	Cut Tape	2,029		1	1 $1.04 10 $0.747 100 $0.5947 1000 $0.51483 10000 $0.51483	Buy Now
	R1172N301D-TR-FE	Digi-Reel	2,029		1	1 $1.04 10 $0.747 100 $0.5947 1000 $0.51483 10000 $0.51483	Buy Now
Susumu Co Ltd RG2012N-301-W-T1 RES SMD 300 OHM 0.05% 1/8W 0805
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RG2012N-301-W-T1	Reel	1,000		1,000	1 - 10 - 100 - 1000 $0.28875 10000 $0.28875	Buy Now

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2N301 Datasheets (382)

Part	Manufacturer	Description	Datasheet Type	PDF
2N301	Diode Transistor	Germanium Low Power Transistors / Power Transistors	Scan	PDF
2N301	Diode Transistor	Germanium Low Power Transistors / Power Transistors	Scan	PDF
2N301	Germanium Power Devices	Germanium Power Transistors	Scan	PDF
2N301	Motorola	Motorola Semiconductor Datasheet Library	Scan	PDF
2N301	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
2N301	Unknown	Basic Transistor and Cross Reference Specification	Scan	PDF
2N301	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2N301	Unknown	Basic Transistor and Cross Reference Specification	Scan	PDF
2N301	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
2N301	Unknown	GE Transistor Specifications	Scan	PDF
2N301	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2N301	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
2N301	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF
2N301	Unknown	Vintage Transistor Datasheets	Scan	PDF

2N301	Unknown	Vintage Transistor Datasheets	Scan	PDF
2N301	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
2N301	RCA	RCA Transistor and Diode Data	Scan	PDF
2N301	Semitron	Germanium Power Transistors	Scan	PDF
2N301	Silicon Transistor	JAN / Consumer / Military / Industrial / Automotive / Hi-Rel	Scan	PDF
2N301	Solidev Semiconductors	Solid State Products (Transistor Guide)	Scan	PDF

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2N301 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2N3019 Abstract: JAN2N3700 2N3019S 2N3019S JAN Text: 2N3019, 2N3019S, 2N3700 Low Power Transistors NPN Silicon Features • MIL−PRF−19500/391 Qualified • Available as JAN, JANTX, and JANTXV http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS TA = 25°C unless otherwise noted Characteristic Symbol Value Unit	Original	PDF	2N3019, 2N3019S, 2N3700 MIL-PRF-19500/391 2N3019S 2N3019 JAN2N3700 2N3019S JAN
2N3019 Abstract: 2N3019J 2N3019JS 2N3019JV 2N3019JX 2N3019 DIE Text: 2N3019 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3019J • JANTX level (2N3019JX)	Original	PDF	2N3019 MIL-PRF-19500 2N3019J) 2N3019JX) 2N3019JV) 2N3019JS) MIL-STD-750 MIL-PRF-19500/391 2N3019 2N3019J 2N3019JS 2N3019JV 2N3019JX 2N3019 DIE
2N3019RB Abstract: No abstract text available Text: 2N3019RB Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 80V 0.41 (0.016)	Original	PDF	2N3019RB O205AD) 1-Aug-02 2N3019RB
2N3012CSM Abstract: 400M Text: 2N3012CSM Dimensions in mm inches . 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) Bipolar NPN Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications 0.31 rad. (0.012) 2 0.76 ± 0.15 (0.03 ± 0.006)	Original	PDF	2N3012CSM 5/30m 2-Aug-02 2N3012CSM 400M
power transistor 2n3020 Abstract: 2N3019 and applications Text: 2N3019 2N3020 NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3019, 2N3020 types are NPN silicon transistors designed for general purpose amplifier applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: TA=25°C	Original	PDF	2N3019 2N3020 2N3019, 150mA, 150mA 500mA 20MHz power transistor 2n3020 2N3019 and applications
2N2869 Abstract: No abstract text available Text: 2N2869/2N301 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)60 I(C) Max. (A)10 Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC)100õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)	Original	PDF	2N2869/2N301 2N2869
JANSL 2N3019S Abstract: JANS2N3700UB 2n3019 equivalent Text: 2N3019 and 2N3019S Qualified Levels: JANSM, JANSD, JANSP, JANSL, and JANSR RADIATION HARDENED LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391 DESCRIPTION This RHA level 2N3019 and 2N3019S NPN leaded metal device is RAD hard qualified for	Original	PDF	2N3019 2N3019S MIL-PRF-19500/391 2N3019S 2N3019. O-205AD) T4-LDS-0098, JANSL 2N3019S JANS2N3700UB 2n3019 equivalent
2N3019A Abstract: 2N3019HR 15384 st marking code Text: 2N3019HR Hi-Rel NPN bipolar transistor 80 V - 1 A Features BVCEO 80 V IC max 1A HFE at 10 V - 150 mA > 100 Operating temperature range -65°C to +200°C • Hi-Rel NPN bipolar transistor ■ Linear gain characteristics ■ ESCC qualified ■ European preferred part list - EPPL	Original	PDF	2N3019HR 2N3019AHR 2N3019A 2N3019HR 15384 st marking code
MRF9331 Abstract: 2SC3029 2N2206 2SC2821 MMBR5031 K918 MMT3960A 2n3681 340t 2SC330 Text: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 2N2318 2N2320 2N3953 MMT3960 lBFT24 2N5186 ST6110 ST6125 ST6120 MMT807 ~~~~~~1 15 20 2N2967 2N3010 2N2475 2N709 MM1748A 2N3832 2N709A 2N2784 ~~~~;~ 25 30 2N2257 2N3681 2SC3011 2SC2876 2SC3301 MRF9331	Original	PDF	2N2318 2N2320 2N3953 MMT3960 lBFT24 2N5186 ST6110 ST6125 ST6120 MMT807 MRF9331 2SC3029 2N2206 2SC2821 MMBR5031 K918 MMT3960A 2n3681 340t 2SC330
Untitled Abstract: No abstract text available Text: 2N3014 Bipolar NPN UHF/Microwave Transisitor 1.26 Transistors UH. 1 of 1 Home Part Number: 2N3014 Online Store 2N3014 Diodes Bipo lar NPN UHF / M icro w av e Trans is it o r Transistors Enter code INTER3 at	Original	PDF	2N3014 com/2n3014 2N3014
Untitled Abstract: No abstract text available Text: 2N3014 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 20V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.2A All Semelab hermetically sealed products	Original	PDF	2N3014 O206AA) 4/30m 16-Jul-02
2N3019 motorola Abstract: 2N3700 MOTOROLA motorola 2N3019 2N3019 2N3700 MOTOROLA TO205AD Text: MOTOROLA Order this document by 2N3019/D SEMICONDUCTOR TECHNICAL DATA General Transistors COLLECTOR 3 LAST SHIP 21/03/00 2N3019 2N3700 NPN Silicon Motorola Preferred Devices 2 BASE 1 EMITTER MAXIMUM RATINGS 2N3019 2N3700 Unit VCEO 80 80 Vdc Collector – Base Voltage	Original	PDF	2N3019/D 2N3019 2N3700 2N3019/D* 2N3019 motorola 2N3700 MOTOROLA motorola 2N3019 2N3019 2N3700 MOTOROLA TO205AD
2N3019 Abstract: No abstract text available Text: 2N3019, 2N3019S, 2N3700 Low Power Transistors NPN Silicon Features • MIL−PRF−19500/391 Qualified • Available as JAN, JANTX, and JANTXV http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS TA = 25°C unless otherwise noted Characteristic Symbol Value Unit	Original	PDF	2N3019, 2N3019S, 2N3700 2N3019S 2N3019/D 2N3019
Untitled Abstract: No abstract text available Text: 2N3019 NPN SILICON TRANSISTOR MECHANICAL DATA Dimensions in mm inches 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) FEATURES • NPN High Voltage Planar Transistor 4.19 (0.165) 4.95 (0.195) • Hermetic TO39 Package 12.70 (0.500) min. 0.89 max. (0.035)	Original	PDF	2N3019 20MHz 100mA

2N3020 Abstract: 2N3019 Text: 2N3019 2N3020 JL PHILIPS INTERNATIONAL SbE T> I 7110flSb D0L»2b40 37^ • PHIN 7= 35" SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in TO-39 metal envelopes intended for use as amplifiers and in switching circuits. QUICK REFERENCE DATA Collector-base voltage open emitter	OCR Scan	PDF	2N3019 2N3020 7110flSb 711002b 00M2fci42 2N3020
Untitled Abstract: No abstract text available Text: m 2N3019 \ \ SILICON NPN TRANSISTOR DESCRIPTION: The 2N3019 is Designed for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS 1.0 A lc V 80 V ce 5.0 W @ Tc = 25 °C P diss Tj -65 °C to +200 °C T -65 °C to +200 °C stg 16.5 °C/W 0JC	OCR Scan	PDF	2N3019 2N3019
2N3012 Abstract: No abstract text available Text: MOTOROLA SC XSTRS/R F igE D \| b3b7ESM OOflba^O T \| 2N3012 CASE 22-03, STYLE 1 TO-18 TO-206AA M A X IM U M RATINGS Sym bol Value Unit Collector-Emitter Voltage V cEO 12 Vdc Collector-Base Voltage VcBO 12 Vdc Emitter-Base Voltage Ve b O 4.0 Vdc Collector Current — Continuous	OCR Scan	PDF	2N3012 O-206AA) 2N869A 2N3012
Untitled Abstract: No abstract text available Text: ¡J8BBBBB88& p \|M iwiHBBffi sm ssssP e .rfHHHHHHHHMh. itittnnnnn hhhhhhk-. loniftBHhr. 1m1 IIr ^888o 88% #f 1 l Data S heet No. 2N 3019 $ sdL SEMICONDUCTORS G eneric Part Num ber: 2N3019 Type 2N3019 G eom etry 4500 Polarity NPN Qual Level: J A N -J A N S REF: M IL-P R F -19500/391	OCR Scan	PDF	J8BBBBB88& 2N3019 MiL-PRF-19500/391
Untitled Abstract: No abstract text available Text: ID I 2N3019CSM SEME LAB HIGH FREQUENCY, NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES 0 5 1 ± 0.10 (0.02 ± 0.004) 0.31 -^/(0012i • SILICON PLANAR EPITAXIAL NPN	OCR Scan	PDF	2N3019CSM 0012i 20MHz 00015flfl
TA550c Abstract: 2N4033 2N3019 and applications TA-550C 2N5020 2N3019 2N3020 2N4031 550C Text: 2N3019 2N 3020 NPN SILICON AP MEDIUM POWER AMPLIFIERS & SWITCHES ' * •\ • * ’ * V •’ , ¿: u \ r> r 1 ¿ 7 . j * * V / • •' ¿ r . .* i f ^ C M i ? > % - ' l,- - • , • • . i * Í ;•: i Í ■ sir4 : 1 1' ; : ; > * ?• K v y i : r ^ V ; y . ‘£	OCR Scan	PDF	2N3019 2N3020 2N3019, 2N5020 2N4033, 2N4031. IC-150mA 150mA VCE-10V 500mA TA550c 2N4033 2N3019 and applications TA-550C 2N4031 550C
2N2992 Abstract: 23028 2N3016 JANTX2N3440 Text: Microsemi NPN Transistors Part Num ber NPN 2N4311 2N4305 2N4309 2N2222A 2N1506 2N1613A 2N5011 2N5012 2N5013 2N5014 2N5015 2N5010 2N5092 2N5095 2N5097 2N5098 2N5099 2N3500 2N3501 2N3866 JAN2N3866 JANTX2N3866 JANTXV2N3866 2N1700 2N3016 2N2102 2N2102A 2N2102S	OCR Scan	PDF
2N3053 Abstract: 2N3019 2N3700 2N3020 2N3019 MOTOROLA motorola 2N3020 test 2N3700 2N3053 motorola 2N3053A 336 motorola Text: 2N3019* 2N3020 M A X IM U M R A T IN G S Symbol 2N3019 2N3020 2N3700 Unit Collector-Emitter Voltage VCEO 80 80 Vdc Collector-Base Voltage VCBO 140 140 Vdc Rating Emitter-Base Voltage CA SE 79-04, STYLE 1 TO-39 TO-205AD V e BO 7.0 7.0 Vdc Collector Current — Continuous	OCR Scan	PDF	2N3019 2N3020 2N3700 2N3020 2N3700 2N3019* O-205AD) 2N3053 2N3019 MOTOROLA motorola 2N3020 test 2N3700 2N3053 motorola 2N3053A 336 motorola
2n3019a Abstract: 2n3019 Text: 2N3019 2N3020 Z A PHILIPS INTERNATIONAL 5bE D m 711GöSb DG42b4G 31e] HPHIN 7 = 3 5 "-/< ? SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in TO-39 metal envelopes intended fo r use as amplifiers and in switching circuits. Q UICK REFERENCE D A T A Collector-base voltage open em itter	OCR Scan	PDF	2N3019 2N3020 DG42b4G 2n3019a
2N2222 - to-92 Abstract: 2N2222A TO-92 JC547 2n2222 to92 2N2222 2N3904 TO-92 type JC500, Jc501 Text: Small Signal Leaded Devices General Purpose and Sw itching Transistors - NPN Types bvceo •c c 3 hFE lc Type Pkg (V (mA) min max (mA) 2N1613 2N1711 2N1893 2N2219 2N2219A 2N2222 2N2222A 2N2297 2N2368 2N2369 2N2369A 2N3019 2N3020 2N3053 2N3904 2N4123 2N4124	OCR Scan	PDF	2N1613 2N1711 2N1893 2N2219 2N2219A 2N2222 2N2222A 2N2297 2N2368 2N2369 2N2222 - to-92 2N2222A TO-92 JC547 2n2222 to92 2N3904 TO-92 type JC500, Jc501

2N301 Search Results

2N301 Price and Stock

Nisshinbo Micro Devices R3112N301C-TR-FE

Susumu Co Ltd RG2012N-3011-W-T5

Nisshinbo Micro Devices RP112N301D-TR-FE

Nisshinbo Micro Devices R1172N301D-TR-FE

Susumu Co Ltd RG2012N-301-W-T1

2N301 Datasheets (382)

2N301 Datasheets Context Search

2N3019

2N3019

2N3019RB

2N3012CSM

power transistor 2n3020

2N2869

JANSL 2N3019S

2N3019A

MRF9331

Untitled

Untitled

2N3019 motorola

2N3019

Untitled

2N3020

Untitled

2N3012

Untitled

Untitled

TA550c

2N2992

2N3053

2n3019a

2N2222 - to-92