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Microchip Technology Inc 2N5011 NPN SILICON TRANSISTOR
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Microchip Technology Inc	2N5011				1	1 $20.44 10 $20.44 100 $20.44 1000 $20.44 10000 $20.44	Buy Now
Onlinecomponents.com	2N5011					1 - 10 - 100 $18.12 1000 $18.12 10000 $18.12	Buy Now
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Microchip Technology Inc 2N5011S POWER BJT
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Onlinecomponents.com	2N5011S					1 - 10 - 100 $18.12 1000 $18.12 10000 $18.12	Buy Now
NAC	2N5011S				17	1 $20.86 10 $20.86 100 $19.21 1000 $17.8 10000 $17.8	Buy Now
Master Electronics	2N5011S					1 - 10 - 100 $18.12 1000 $18.12 10000 $18.12	Buy Now
Microchip Technology Inc 2N5011U4 POWER BJT
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DigiKey	2N5011U4	Bulk			100	1 - 10 - 100 $81.3106 1000 $81.3106 10000 $81.3106	Buy Now
Avnet Americas	2N5011U4	Bulk		22 Weeks	100	1 $87.56 10 $87.56 100 $81.31 1000 $78.18 10000 $78.18	Buy Now
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Newark	2N5011U4	Bulk			100	1 - 10 - 100 $81.31 1000 $78.18 10000 $78.18	Buy Now
Microchip Technology Inc	2N5011U4				1	1 $87.56 10 $87.56 100 $87.56 1000 $87.56 10000 $87.56	Buy Now

NAC	2N5011U4				3	1 $89.36 10 $89.36 100 $82.3 1000 $76.28 10000 $76.28	Buy Now
Master Electronics	2N5011U4					1 - 10 - 100 $80.1 1000 $80.1 10000 $80.1	Buy Now
HUBER+SUHNER 6802_N-50-1-1--_NE RF ATTENUATOR 2DB 50 N-TP IN-L M
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DigiKey	6802_N-50-1-1--_NE	Bulk			1	1 $99.6 10 $99.6 100 $99.6 1000 $99.6 10000 $99.6	Buy Now
HUBER+SUHNER 65002_N-50-1-122_NE CONN TREM PLG MALE N-TYPE 50OH
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DigiKey	65002_N-50-1-122_NE	Bulk			1	1 $137.43 10 $137.43 100 $137.43 1000 $137.43 10000 $137.43	Buy Now

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2N5011 Datasheets (24)

Part	Manufacturer	Description	Datasheet Type	PDF
2N5011	Microsemi	Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - NPN SILICON TRANSISTOR	Original	PDF
2N5011	Semelab	Bipolar NPN Device in a Hermetically Sealed TO39 Metal Package - Pol=NPN / Pkg=TO39 / Vceo=600 / Ic=0.5 / Hfe=30-180 / fT(Hz)=20M / Pwr(W)=2	Original	PDF
2N5011	Diode Transistor	NPN Transistor Selection Guide	Scan	PDF
2N5011	Diode Transistor	Transistor Short Form Data	Scan	PDF
2N5011	General Transistor	Power Transistor Selection Guide	Scan	PDF
2N5011	High Voltage Semi-Conductor Specialists	Military and Industrial Medium Power Transistors	Scan	PDF
2N5011	Motorola	Motorola Semiconductor Datasheet Library	Scan	PDF
2N5011	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2N5011	Unknown	Basic Transistor and Cross Reference Specification	Scan	PDF
2N5011	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
2N5011	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
2N5011	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF
2N5011	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2N5011	New England Semiconductor	NPN TO-39 / TO-5 Transistor	Scan	PDF

2N5011	New England Semiconductor	BIPOLAR NPN TRANSISTOR TO-39 TO-5	Scan	PDF
2N5011	PPC Products	Transistor Short Form Data	Scan	PDF
2N5011	PPC Products	Transistor Selection Guide	Scan	PDF
2N5011	PPC Products	Transistor Selection Guide including JAN / JANTX / JANTXV	Scan	PDF
2N5011	Semiconductor Technology	High Voltage Silicon Low and Medium Power Transistors	Scan	PDF
2N5011	Semiconductor Technology	High Voltage Silicon Low and Medium Power Transistors	Scan	PDF

2N5011 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2N5011 Abstract: No abstract text available Text: 2N5011 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 600V 0.41 (0.016)	Original	PDF	2N5011 O205AD) 10/25m 1-Aug-02 2N5011
Untitled Abstract: No abstract text available Text: 2N5011 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 600V 0.41 (0.016)	Original	PDF	2N5011 O205AD) 10/25m 19-Jun-02
Untitled Abstract: No abstract text available Text: 2N5011 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 600V 0.41 (0.016)	Original	PDF	2N5011 O205AD) 10/25m 17-Jul-02
2N5013 Abstract: 2N5010 2N5011 2N5012 2N5014 2N5015 transistor npn 10mhz 500v Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/727 DEVICES 2N5010 2N5011 2N5012 LEVELS 2N5013 2N5014 2N5015	Original	PDF	MIL-PRF-19500/727 2N5010 2N5011 2N5012 2N5013 2N5014 2N5015 2N5010S 2N5011S 2N5012S 2N5013 2N5010 2N5011 2N5012 2N5014 2N5015 transistor npn 10mhz 500v
2N5014 Abstract: 2N5015 2N5010 2N5011 2N5012 2N5013 npn ic 25mA Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/727 DEVICES 2N5010 2N5011 2N5012 LEVELS 2N5013 2N5014 2N5015	Original	PDF	MIL-PRF-19500/727 2N5010 2N5011 2N5012 2N5013 2N5014 2N5015 2N5010S 2N5011S 2N5012S 2N5014 2N5015 2N5010 2N5011 2N5012 2N5013 npn ic 25mA
2SC1626Y Abstract: PT8860 2SC22 2SC1626-Y 2SC2494 2N5764 2N295 2N1720 2SC1626Y NPN 2N1718 Text: POWER SILICON NPN Item Number Part Number I C 5 10 < 1 A, BUX87 2N5010 2N5011 2SC1004 2N5012 2SC3184 2SC1004A 2N5013 2N5014 2N5015 ~~~~6~S 15 20 S01409 2SC2931 2SC1970 2SC1620 2SC22 GES5551 TH596 2SC3116 ~~g:~~A 25 30 40326 40635 2S01458 2S01483 2N5768 2N5768	Original	PDF	220var 37var 2SC2117 2S0359 2S0360 TN1711 2S0414 2S0414 237var 2SC1626Y PT8860 2SC22 2SC1626-Y 2SC2494 2N5764 2N295 2N1720 2SC1626Y NPN 2N1718
bu808 equivalent Abstract: bu808 2N4001 diode equivalent bu808 2N3953 2N4957 2N3908 2N3916 2N3930 BU143 Text: STI Type: 2N3778 Notes: Polarity: PNP Power Dissipation: 5.0 VCBO: 40 VCER: ICBO: ICBO ua: hFE: 10 hFE A: .2 VCE: VBE: IC A: COB: fT: 1.0 Case Style: TO-205AD/TO-39 Industry Type: 2N3778 STI Type: 2N3792 Notes: *BVCBO Polarity: PNP Power Dissipation: 150 Tj: 200	Original	PDF	2N3778 O-205AD/TO-39 2N3792 O-204AA/TO-3 2N3791 2N3798 bu808 equivalent bu808 2N4001 diode equivalent bu808 2N3953 2N4957 2N3908 2N3916 2N3930 BU143
NPN VCEO 800V Abstract: pnp 1000V 2A PNP Vceo 500V 2A 40V NPN NPN VCEo 1000V 1000v, NPN 800V PNP 1000v 5A npn Text: Search Results Part number search for devices beginning "2N4939" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC cont HFE(min) HFE(max) @ VCE/IC FT PD 2N4939 PNP TO79 40V 0.05A 50 - 10/1m 300MHz	Original	PDF	2N4939" 2N4939 2N4939DCSM 10/1m 300MHz 2N5001" 2N5001 2N5001S NPN VCEO 800V pnp 1000V 2A PNP Vceo 500V 2A 40V NPN NPN VCEo 1000V 1000v, NPN 800V PNP 1000v 5A npn
2N2992 Abstract: 23028 2N3016 JANTX2N3440 Text: Microsemi NPN Transistors Part Num ber NPN 2N4311 2N4305 2N4309 2N2222A 2N1506 2N1613A 2N5011 2N5012 2N5013 2N5014 2N5015 2N5010 2N5092 2N5095 2N5097 2N5098 2N5099 2N3500 2N3501 2N3866 JAN2N3866 JANTX2N3866 JANTXV2N3866 2N1700 2N3016 2N2102 2N2102A 2N2102S	OCR Scan	PDF
Untitled Abstract: No abstract text available Text: SEM ELA B pic - SELECTO R GUIDE DISCRETE BI-POLAR DEVICES Type_No Description 2N4938DCSM 2N4939 2N4939DSCM 2N4999 2N5000 2N5000-SM 2N5001 2N5001-SM 2N5001S 2N5002 2N5002-SM 2N5010 2N5011 2N5012 2N5013 2N5014 2N5015 2N5015S 2N5023 2N5023S 2N5038 2N5038 C E C C	OCR Scan	PDF	2N4938DCSM 2N4939 2N4939DSCM 2N4999 2N5000 2N5000-SM 2N5001 2N5001-SM 2N5001S 2N5002
Untitled Abstract: No abstract text available Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-39/TO-5 VcEO Ic sus (max) VOLTS AMPS hpE@i<yvCE ^CE(sit) PACKAGE DEVICE TYPE (min/max @ A/V) NPN TO-39 2N4150A 70 5.0 40-120@5/5 .6@5/,5 2N5010 500h .5 30-180@.025/10 2N5011 600h .5 2N5012 700h 2N5013 @ Ic/I b	OCR Scan	PDF	O-39/TO-5 2N4150A 2N5010 2N5011 2N5012 2N5013 2N5152 2N5154 2N5237A 2N5238A
2N5098 Abstract: TRS-1604 TRS1604 2N3742 a 4504 2N5013 20MC 2N3439 2N4926 2N4927 Text: Û0 D E JM47107fl DOOODOE □ f 8 0 A 00002 D 7~— X l - û j HIGH VOLTAGE 4471078 HIGH VOLTAGE BVCER RBE10Ü @200 lia VOLTS 350 2N3439 2N4926 / 2K4927 200 200 ’ 250 500« 2N5011 @100 ua VOLTS 300 250 2N5010 @200 ua VOLTS 300 300 2N3742 BVEBO •450 ' 250	OCR Scan	PDF	M47107fl 2N3439 2M3440 2N3742 2N4926 2N4927 2N5010 2N5011 2N5012 2N5013 2N5098 TRS-1604 TRS1604 a 4504 20MC
IC IL 117 Abstract: 2N5011 2N5339A transistor sit TRANSISTOR 800h 2N5010 2N5012 2N5013 2N5152 2N5154 Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-39/TO-5 IC/ VCE min/max @ A/V PACKAGE DEVICE TYPE VcEO (sus) VOLTS Ic (max) AMPS NPN TO-39 2N4150A 70 5.0 40-120@5/5 .6@5/,5 2N5010 500h .5 30-180@.025/10 2N5011 600h .5 2N5012 700h 2N5013 ¡¡I NPN TO-5	OCR Scan	PDF	O-39/TO-5 2N4150A 2N5010 2N5011 2N5012 2N5013 2N5152 2N5154 2N5237A 2N5238A IC IL 117 2N5339A transistor sit TRANSISTOR 800h
Untitled Abstract: No abstract text available Text: o o o 1C fT hFE @ 1C Device Type Min Amps Case PD @ TC MHz Watts °C JEDEC 0.15 300 2N5058 35 0.03 30 1 25 TO-5 0.5 300 2N3742 20 0.03 30 1 25 TO-5 TO-5 30 0.25 25 25 25 30 0.025 35 4 25 TO-5 600* 2N5011 30 0.025 35 4 25 TO-5 700* 2N5012 30 0.025 35 800* 2N5013	OCR Scan	PDF	2N5058 2N3742 SFT102 2N5010 2N5011 2N5012 2N5013 2N5014 2N5015 SFT8600

Untitled Abstract: No abstract text available Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-39/TO-5 NPN TO-39 NPN TO-5 DEVICE TYPE 2N1479 2N1480 2N1481 2N1482 2N1714 2N1717 2N3418 2N3419 2N3420 2N3421 2N3439 2N3440 2N4150 2N5010 2N5011 2N5012 2N5013 2N5152 2N5154 2N5237 2N5238 2N5337 2N5338 2N5339	OCR Scan	PDF	O-39/TO-5 2N1479 2N1480 2N1481 2N1482 2N1714 2N1717 2N3418 2N3419 2N3420
2N1479 Abstract: 2N1480 2N1481 2N1482 2N1700 2N5781 2N5782 2N5784 2N5785 2N5786 Text: "flM NPN TO-39/TO-5 2848352 DIODE TRANSISTOR DE J 2 B M Û 3 S E 0DÜG155 5 C O . I N C 84D 00125 D jr. 3 l-O fT D1QDE TMI\l.515T0ft Cü.if\IC. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area ca ll TO LL FREE 800-526-4581 FA X No. 201-575-5863	OCR Scan	PDF	O-39/TO-5 D00D1SS 515TQft 2N1479 2N1480 2N1481 2N1482 2N1700 2N5784 2N5785 2N5781 2N5782 2N5786
Untitled Abstract: No abstract text available Text: General Transistor Corporation CASE TO-5/TO-39 le MAX = 0.05-10A V ce o (S U S ) NPN Power Transistors PM> VCEÛ («u») M IC (IMI) (A) hFE&c/V» (mn-mu A/V) VCE(SAT) eo b (V A/A) VBE ©IC/VCE (V© A/V) 2N1479 2N1480 2N1481 2N1482 40 55 40 55 1.5 1.5	OCR Scan	PDF	O-5/TO-39 5-10A 2N1479 2N1480 2N1481 2N1482 2N1700 2N3418 2N3419 2N3420
2N4839 Abstract: TO114 package 2N5860 2N1724A 2N3714 2N3715 2N3716 2N3789 2N3790 2N3792 Text: GENERAL TRANSISTOR CORP 24E D • 3^SaD01 DODOD^ fi ■ General Transistor Corporation CASE TO-3, TO-39 lc MAX =3-50A Vceo(sus) s40-100V 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 (213) 673-8422 • Telex 65-3474 * FAX (213) 672-2905 T - 3 3 - o i	OCR Scan	PDF	2N3789 2N3713 2N3790 2N3714 2N3791 2N3715 2N3792 050-H O-107 O-126 2N4839 TO114 package 2N5860 2N1724A 2N3716
Untitled Abstract: No abstract text available Text: "type No. 6133167 □□□□□SO fl 37E D SEMELAB LTD Option'1*^ Po,arity 2N4925 2N4928 2N4929 2N4930 2N4931 SCREEN HI-REL SCREEN SCREEN SCREEN NPN PNP PNP PNP PNP 2N4937 2N4999 2N5000 2N5001 2N5002 HI-REL HI-REL HI-REL HI-REL HI-REL PNP PNP NPN PNP NPN	OCR Scan	PDF	2N4925 2N4928 2N4929 2N4930 2N4931 2N4937 2N4999 2N5000 2N5001 2N5002
MD14 Abstract: 2N4069 2N4358 2N4438 2N2726 2N2727 2N2858 2N2859 2N2989 2N2990 Text: SEM ICO NDUCTO R TECHNOLOGY O SE D I fll3 h 4 5 fl O D D O S l? s £ Jay Sueet SEMICONDUCTOR TECHNOLOGY, INC. HIGH VOLTAGE SILICON LOW AND MEDIUM POWER TRANSISTORS Stuart. Florida 34S37 407 283-4500 • TWX - 5 1 0 -9 5 - W b '• FAX 407-286-891'! MPN & p n p	OCR Scan	PDF	34S37 510-953-7b' 2N2726 2N2727 2N2858 2N2859 N2988 2N2989 2N5058 N5059 MD14 2N4069 2N4358 2N4438 2N2990
aeg diode Si 61 L Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680 Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books	OCR Scan	PDF	11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
2N3904DCSM Abstract: 2N2222ADCSM 2NA931 2N3810DCSM 2NA999 2NA930 Text: Ö1331Ö7 GGD043Ö TT1 4 ÔE D SEMELABL SEMELAB IS MLB LTD * 27. ^ BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY HI-REL Type Number 2NA898 2N4899 2NA900 2NA901 2N4902 2NA903 2NA90A 2NA905 2NA906 2NA907 2NA908 2NA909 2NA910 2NA911 2NA912 2NA913 2NA91A	OCR Scan	PDF	GGD043Ö 2NA898 2N4899 2NA900 2NA901 2N4902 2NA903 2NA90A 2NA905 2NA906 2N3904DCSM 2N2222ADCSM 2NA931 2N3810DCSM 2NA999 2NA930
MC2259 Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214 Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the	OCR Scan	PDF
RCA SK CROSS-REFERENCE Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1 Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered	OCR Scan	PDF

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2N5011 Datasheets (24)

2N5011 Datasheets Context Search

2N5011

Untitled

Untitled

2N5013

2N5014

2SC1626Y

bu808 equivalent

NPN VCEO 800V

2N2992

Untitled

Untitled

2N5098

IC IL 117

Untitled

Untitled

2N1479

Untitled

2N4839

Untitled

MD14

aeg diode Si 61 L

2N3904DCSM

MC2259

RCA SK CROSS-REFERENCE