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Microchip Technology Inc 2N5013 TRANS NPN 800V 0.2A TO5
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Microchip Technology Inc JAN2N5013 Trans GP BJT NPN 800V 200mA 3-Pin TO-5 Bag - Bag (Alt: JAN2N5013)
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Microchip Technology Inc JANTX2N5013U4 Trans GP BJT NPN 800V 200mA 3-Pin SMD - Trays (Alt: JANTX2N5013U4)
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Microchip Technology Inc JAN2N5013U4 Trans GP BJT NPN 800V 200mA 3-Pin SMD - Trays (Alt: JAN2N5013U4)
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Microchip Technology Inc JANTXV2N5013U4 Trans GP BJT NPN 800V 200mA 3-Pin SMD - Trays (Alt: JANTXV2N5013U4)
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2N5013 Datasheets (21)

Part	Manufacturer	Description	Datasheet Type	PDF
2N5013	Semelab	Bipolar NPN Device in a Hermetically Sealed TO39 Metal Package - Pol=NPN / Pkg=TO39 / Vceo=800 / Ic=0.5 / Hfe=30-180 / fT(Hz)=20M / Pwr(W)=2	Original	PDF
2N5013	Diode Transistor	NPN Transistor Selection Guide	Scan	PDF
2N5013	Diode Transistor	Transistor Short Form Data	Scan	PDF
2N5013	High Voltage Semi-Conductor Specialists	Military and Industrial Medium Power Transistors	Scan	PDF
2N5013	Motorola	Motorola Semiconductor Datasheet Library	Scan	PDF
2N5013	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF
2N5013	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2N5013	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2N5013	Unknown	Basic Transistor and Cross Reference Specification	Scan	PDF
2N5013	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
2N5013	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
2N5013	New England Semiconductor	BIPOLAR NPN TRANSISTOR TO-39 TO-5	Scan	PDF
2N5013	New England Semiconductor	NPN TO-39 / TO-5 Transistor	Scan	PDF
2N5013	PPC Products	Transistor Short Form Data	Scan	PDF

2N5013	PPC Products	Transistor Selection Guide	Scan	PDF
2N5013	PPC Products	Transistor Selection Guide including JAN / JANTX / JANTXV	Scan	PDF
2N5013	Semiconductor Technology	High Voltage Silicon Low and Medium Power Transistors	Scan	PDF
2N5013	Semiconductor Technology	High Voltage Silicon Low and Medium Power Transistors	Scan	PDF
2N5013	Solid State	800 V, 0.5 A high voltage NPN transistor - Pol=NPN / Pkg=TO39 / Vceo=800 / Ic=0.5 / Hfe=30-180 / fT(Hz)=20M / Pwr(W)=2	Scan	PDF
2N5013	Solid State Devices	HIGH VOLTAGE SILICON DIFFUSED NPN TRANSISTOR	Scan	PDF

2N5013 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2N50 Abstract: 2N5010 2N5012 npn vce 900v 2N5013 2N5015 5013 Text: 2N5013 thru 2N5015 SFT5013/5 thru SFT5015/5 Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET Part Number / Ordering Information 1/	Original	PDF	2N5013 2N5015 SFT5013/5 SFT5015/5 SFT50 2N5010 2N501ctor TR0043D 2N50 2N5012 npn vce 900v 2N5015 5013
Untitled Abstract: No abstract text available Text: 2N5013 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 800V 0.41 (0.016)	Original	PDF	2N5013 O205AD) 10/25m 19-Jun-02
Untitled Abstract: No abstract text available Text: 2N5013 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 800V 0.41 (0.016)	Original	PDF	2N5013 O205AD) 10/25m 17-Jul-02
2N5014 Abstract: 2N5013 2N5015 2N5010 2N5012 Text: 2N5013 thru 2N5015 Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 0.5 AMP 800 – 1000 Volts NPN Transistor DESIGNER’S DATA SHEET FEATURES: • •	Original	PDF	2N5013 2N5015 2N5010 2N5012 2N5013 2N5014 2N5014 2N5015
2N5013 Abstract: 2N5010 2N5011 2N5012 2N5014 2N5015 transistor npn 10mhz 500v Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/727 DEVICES 2N5010 2N5011 2N5012 LEVELS 2N5013 2N5014 2N5015	Original	PDF	MIL-PRF-19500/727 2N5010 2N5011 2N5012 2N5013 2N5014 2N5015 2N5010S 2N5011S 2N5012S 2N5013 2N5010 2N5011 2N5012 2N5014 2N5015 transistor npn 10mhz 500v
2N5015 Abstract: 2N5014 2N5010 2N5012 2N5013 Text: 2N5013 thru 2N5015 Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 0.5 AMP 800 – 1000 Volts NPN Transistor DESIGNER’S DATA SHEET FEATURES: • •	Original	PDF	2N5013 2N5015 2N5010 2N5012 2N5013 2N5014 2N5015 2N5014
2N5013 Abstract: No abstract text available Text: 2N5013 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 800V 0.41 (0.016)	Original	PDF	2N5013 O205AD) 10/25m 1-Aug-02 2N5013
2N5014 Abstract: 2N5015 2N5010 2N5011 2N5012 2N5013 npn ic 25mA Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/727 DEVICES 2N5010 2N5011 2N5012 LEVELS 2N5013 2N5014 2N5015	Original	PDF	MIL-PRF-19500/727 2N5010 2N5011 2N5012 2N5013 2N5014 2N5015 2N5010S 2N5011S 2N5012S 2N5014 2N5015 2N5010 2N5011 2N5012 2N5013 npn ic 25mA
2SC1626Y Abstract: PT8860 2SC22 2SC1626-Y 2SC2494 2N5764 2N295 2N1720 2SC1626Y NPN 2N1718 Text: POWER SILICON NPN Item Number Part Number I C 5 10 < 1 A, BUX87 2N5010 2N5011 2SC1004 2N5012 2SC3184 2SC1004A 2N5013 2N5014 2N5015 ~~~~6~S 15 20 S01409 2SC2931 2SC1970 2SC1620 2SC22 GES5551 TH596 2SC3116 ~~g:~~A 25 30 40326 40635 2S01458 2S01483 2N5768 2N5768	Original	PDF	220var 37var 2SC2117 2S0359 2S0360 TN1711 2S0414 2S0414 237var 2SC1626Y PT8860 2SC22 2SC1626-Y 2SC2494 2N5764 2N295 2N1720 2SC1626Y NPN 2N1718
bu808 equivalent Abstract: bu808 2N4001 diode equivalent bu808 2N3953 2N4957 2N3908 2N3916 2N3930 BU143 Text: STI Type: 2N3778 Notes: Polarity: PNP Power Dissipation: 5.0 VCBO: 40 VCER: ICBO: ICBO ua: hFE: 10 hFE A: .2 VCE: VBE: IC A: COB: fT: 1.0 Case Style: TO-205AD/TO-39 Industry Type: 2N3778 STI Type: 2N3792 Notes: *BVCBO Polarity: PNP Power Dissipation: 150 Tj: 200	Original	PDF	2N3778 O-205AD/TO-39 2N3792 O-204AA/TO-3 2N3791 2N3798 bu808 equivalent bu808 2N4001 diode equivalent bu808 2N3953 2N4957 2N3908 2N3916 2N3930 BU143
Untitled Abstract: No abstract text available Text: SOLID STATE DEVICES INC 12E D Jfl3tbDll GDDBDSl T \| T - S3-OS- 2N5013 THRU 2N5015 500 mA HIGH VOLTAGE NPN TRANSISTOR 8 0 0 -1 0 0 0 VOLTS CASE STYLE W JEDEC TO—5 14830 Valley View Avenue La Mirada, California 90638 213 921-9660 TW X 910-583-4807 FAX 213-921-2396	OCR Scan	PDF	2N5013 2N5015 2N5010 2N5012
2N2992 Abstract: 23028 2N3016 JANTX2N3440 Text: Microsemi NPN Transistors Part Num ber NPN 2N4311 2N4305 2N4309 2N2222A 2N1506 2N1613A 2N5011 2N5012 2N5013 2N5014 2N5015 2N5010 2N5092 2N5095 2N5097 2N5098 2N5099 2N3500 2N3501 2N3866 JAN2N3866 JANTX2N3866 JANTXV2N3866 2N1700 2N3016 2N2102 2N2102A 2N2102S	OCR Scan	PDF
Untitled Abstract: No abstract text available Text: SEM ELA B pic - SELECTO R GUIDE DISCRETE BI-POLAR DEVICES Type_No Description 2N4938DCSM 2N4939 2N4939DSCM 2N4999 2N5000 2N5000-SM 2N5001 2N5001-SM 2N5001S 2N5002 2N5002-SM 2N5010 2N5011 2N5012 2N5013 2N5014 2N5015 2N5015S 2N5023 2N5023S 2N5038 2N5038 C E C C	OCR Scan	PDF	2N4938DCSM 2N4939 2N4939DSCM 2N4999 2N5000 2N5000-SM 2N5001 2N5001-SM 2N5001S 2N5002
Untitled Abstract: No abstract text available Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-39/TO-5 VcEO Ic sus (max) VOLTS AMPS hpE@i<yvCE ^CE(sit) PACKAGE DEVICE TYPE (min/max @ A/V) NPN TO-39 2N4150A 70 5.0 40-120@5/5 .6@5/,5 2N5010 500h .5 30-180@.025/10 2N5011 600h .5 2N5012 700h 2N5013 @ Ic/I b	OCR Scan	PDF	O-39/TO-5 2N4150A 2N5010 2N5011 2N5012 2N5013 2N5152 2N5154 2N5237A 2N5238A

Untitled Abstract: No abstract text available Text: o o o 1C fT hFE @ 1C Device Type Min Amps Case PD @ TC MHz Watts °C JEDEC 0.15 300 2N5058 35 0.03 30 1 25 TO-5 0.5 300 2N3742 20 0.03 30 1 25 TO-5 TO-5 30 0.25 25 25 25 30 0.025 35 4 25 TO-5 600* 2N5011 30 0.025 35 4 25 TO-5 700* 2N5012 30 0.025 35 800* 2N5013	OCR Scan	PDF	2N5058 2N3742 SFT102 2N5010 2N5011 2N5012 2N5013 2N5014 2N5015 SFT8600
Untitled Abstract: No abstract text available Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-39/TO-5 NPN TO-39 NPN TO-5 DEVICE TYPE 2N1479 2N1480 2N1481 2N1482 2N1714 2N1717 2N3418 2N3419 2N3420 2N3421 2N3439 2N3440 2N4150 2N5010 2N5011 2N5012 2N5013 2N5152 2N5154 2N5237 2N5238 2N5337 2N5338 2N5339	OCR Scan	PDF	O-39/TO-5 2N1479 2N1480 2N1481 2N1482 2N1714 2N1717 2N3418 2N3419 2N3420
2N5013 Abstract: 2N5010 2N5012 2N5015 2N5014 Text: ton i \ ^ 2N5013 THRU 2N5015 500 mA HIGH VOLTAGE NPN TRANSISTOR 800-1000VOLTS CASE STYLE W JED EC TO -5 14830 Valley View Avenue La Mirada, California 90638 213 921-9660 TWX 910-583-4807 FAX 213-921-2396 FEATURES • B V C E R AND B V C B O TO • LOW S A T U R A T IO N V O L T A G E	OCR Scan	PDF	2N5013 2N5015 800-1000VOLTS 2N5010 2N5012 2N5014 2N5013-2NS0H 2N5015-
IC HXJ 2038 Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY	OCR Scan	PDF
2N1479 Abstract: 2N1480 2N1481 2N1482 2N1700 2N5781 2N5782 2N5784 2N5785 2N5786 Text: "flM NPN TO-39/TO-5 2848352 DIODE TRANSISTOR DE J 2 B M Û 3 S E 0DÜG155 5 C O . I N C 84D 00125 D jr. 3 l-O fT D1QDE TMI\l.515T0ft Cü.if\IC. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area ca ll TO LL FREE 800-526-4581 FA X No. 201-575-5863	OCR Scan	PDF	O-39/TO-5 D00D1SS 515TQft 2N1479 2N1480 2N1481 2N1482 2N1700 2N5784 2N5785 2N5781 2N5782 2N5786
Untitled Abstract: No abstract text available Text: General Transistor Corporation CASE TO-5/TO-39 le MAX = 0.05-10A V ce o (S U S ) NPN Power Transistors PM> VCEÛ («u») M IC (IMI) (A) hFE&c/V» (mn-mu A/V) VCE(SAT) eo b (V A/A) VBE ©IC/VCE (V© A/V) 2N1479 2N1480 2N1481 2N1482 40 55 40 55 1.5 1.5	OCR Scan	PDF	O-5/TO-39 5-10A 2N1479 2N1480 2N1481 2N1482 2N1700 2N3418 2N3419 2N3420
2N4839 Abstract: TO114 package 2N5860 2N1724A 2N3714 2N3715 2N3716 2N3789 2N3790 2N3792 Text: GENERAL TRANSISTOR CORP 24E D • 3^SaD01 DODOD^ fi ■ General Transistor Corporation CASE TO-3, TO-39 lc MAX =3-50A Vceo(sus) s40-100V 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 (213) 673-8422 • Telex 65-3474 * FAX (213) 672-2905 T - 3 3 - o i	OCR Scan	PDF	2N3789 2N3713 2N3790 2N3714 2N3791 2N3715 2N3792 050-H O-107 O-126 2N4839 TO114 package 2N5860 2N1724A 2N3716
Untitled Abstract: No abstract text available Text: "type No. 6133167 □□□□□SO fl 37E D SEMELAB LTD Option'1*^ Po,arity 2N4925 2N4928 2N4929 2N4930 2N4931 SCREEN HI-REL SCREEN SCREEN SCREEN NPN PNP PNP PNP PNP 2N4937 2N4999 2N5000 2N5001 2N5002 HI-REL HI-REL HI-REL HI-REL HI-REL PNP PNP NPN PNP NPN	OCR Scan	PDF	2N4925 2N4928 2N4929 2N4930 2N4931 2N4937 2N4999 2N5000 2N5001 2N5002
MD14 Abstract: 2N4069 2N4358 2N4438 2N2726 2N2727 2N2858 2N2859 2N2989 2N2990 Text: SEM ICO NDUCTO R TECHNOLOGY O SE D I fll3 h 4 5 fl O D D O S l? s £ Jay Sueet SEMICONDUCTOR TECHNOLOGY, INC. HIGH VOLTAGE SILICON LOW AND MEDIUM POWER TRANSISTORS Stuart. Florida 34S37 407 283-4500 • TWX - 5 1 0 -9 5 - W b '• FAX 407-286-891'! MPN & p n p	OCR Scan	PDF	34S37 510-953-7b' 2N2726 2N2727 2N2858 2N2859 N2988 2N2989 2N5058 N5059 MD14 2N4069 2N4358 2N4438 2N2990
aeg diode Si 61 L Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680 Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books	OCR Scan	PDF	11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680

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Microchip Technology Inc 2N5013

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2N5013 Datasheets (21)

2N5013 Datasheets Context Search

2N50

Untitled

Untitled

2N5014

2N5013

2N5015

2N5013

2N5014

2SC1626Y

bu808 equivalent

Untitled

2N2992

Untitled

Untitled

Untitled

Untitled

2N5013

IC HXJ 2038

2N1479

Untitled

2N4839

Untitled

MD14

aeg diode Si 61 L