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    2N3012 Price and Stock

    Susumu Co Ltd RG2012N-3012-C-T5

    RES SMD 30.1KOHM 0.25% 1/8W 0805
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RG2012N-3012-C-T5 Reel 5,000
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    Susumu Co Ltd RG2012N-3012-W-T5

    RES SMD 30.1KOHM 0.05% 1/8W 0805
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RG2012N-3012-W-T5 Reel 5,000
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    Mouser Electronics RG2012N-3012-W-T5
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    Susumu Co Ltd RG2012N-3012-B-T1

    RES SMD 30.1K OHM 0.1% 1/8W 0805
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RG2012N-3012-B-T1 Reel 1,000
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    Mouser Electronics RG2012N-3012-B-T1
    • 1 $0.64
    • 10 $0.452
    • 100 $0.306
    • 1000 $0.2
    • 10000 $0.184
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    Susumu Co Ltd RG2012N-3012-D-T5

    RES SMD 30.1K OHM 0.5% 1/8W 0805
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RG2012N-3012-D-T5 Reel 5,000
    • 1 -
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    • 10000 $0.09526
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    Mouser Electronics RG2012N-3012-D-T5
    • 1 $0.35
    • 10 $0.25
    • 100 $0.172
    • 1000 $0.104
    • 10000 $0.092
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    Susumu Co Ltd RG2012N-3012-B-T5

    RES SMD 30.1K OHM 0.1% 1/8W 0805
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RG2012N-3012-B-T5 Reel 5,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.19051
    		Buy Now
    Mouser Electronics RG2012N-3012-B-T5
    • 1 -
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    • 10000 $0.186
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    Find more 2N3012 price and stock on Findchips.com

    2N3012 Datasheets (36)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N3012 Central Semiconductor Leaded Small Signal Transistor General Purpose - Pol=NPN / Pkg=TO18 / Vceo=12 / Ic=0.2 / Hfe=30-120 / fT(Hz)=400M / Pwr(W)=0.36 Original PDF
    2N3012 Semelab Bipolar PNP Device in a Hermetically Sealed TO18 Metal Package - Pol=NPN / Pkg=TO18 / Vceo=12 / Ic=0.2 / Hfe=30-120 / fT(Hz)=400M / Pwr(W)=0.36 Original PDF
    2N3012 Central Semiconductor PNP METAL CAN Transistors Scan PDF
    2N3012 Crimson Semiconductor Transistor Selection Guide Scan PDF
    2N3012 General Diode Transistor Selection Guide Scan PDF
    2N3012 Motorola The European Selection Data Book 1976 Scan PDF
    2N3012 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N3012 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N3012 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N3012 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N3012 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N3012 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N3012 Unknown GE Transistor Specifications Scan PDF
    2N3012 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2N3012 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N3012 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N3012 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2N3012 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N3012 Unknown Vintage Transistor Datasheets Scan PDF
    2N3012 Unknown Vintage Transistor Datasheets Scan PDF

    2N3012 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N3012CSM

    Abstract: 400M
    Text: 2N3012CSM Dimensions in mm inches . 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) Bipolar NPN Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications 0.31 rad. (0.012) 2 0.76 ± 0.15 (0.03 ± 0.006)


    Original     		PDF 2N3012CSM 5/30m 2-Aug-02 2N3012CSM 400M

    Untitled

    Abstract: No abstract text available
    Text: 2N3012 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 12V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.2A All Semelab hermetically sealed products


    Original     		PDF 2N3012 O206AA) 5/30m 19-Jun-02

    2N3012

    Abstract: No abstract text available
    Text: 2N3012 Si NPN Power BJT 16.25 Transistors Transistors Bipolar Si NP. 1 of 1 Home Part Number: 2N3012 Online Store 2N3012 Diodes Si NPN Po w er BJ T Transistors Enter code INTER3 at checkout.* Integrated Circuits


    Original     		PDF 2N3012 com/2n3012 2N3012

    2N3012

    Abstract: 400M
    Text: 2N3012 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 12V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.2A All Semelab hermetically sealed products


    Original     		PDF 2N3012 O206AA) 5/30m 2-Aug-02 2N3012 400M

    2N3012

    Abstract: No abstract text available
    Text: 2N3012 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 12V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.2A All Semelab hermetically sealed products


    Original     		PDF 2N3012 O206AA) 5/30m 16-Jul-02 2N3012

    Untitled

    Abstract: No abstract text available
    Text: 2N3012CSM Dimensions in mm inches . 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) Bipolar NPN Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications 0.31 rad. (0.012) 2 0.76 ± 0.15 (0.03 ± 0.006)


    Original     		PDF 2N3012CSM 5/30m 17-Jul-02

    switch NPN

    Abstract: BSY18 2N2369 2n4390
    Text: Small Signal Transistors TO-18 Case TYPE NO. DESCRIPTION BVCBO BVCEO BVEBO ICBO @ V (V) (V) (mA) MIN MIN MIN VCB (V) MAX hFE @ IC (mA) MIN MAX @ VCE (V) VCE (SAT) @ IC Cob fT (V) (mA) (pF) (MHz) (dB) ton (ns) toff (ns) MAX MAX MAX MAX MAX MIN NF *ICES *ICEV


    Original     		PDF 2N703 2N706C 2N708 2N709A 2N717 2N718A 2N719A 2N720A 2N721 2N722A switch NPN BSY18 2N2369 2n4390

    2N3012

    Abstract: 2N2894 2N3012M
    Text: TYPES ¿«1884 2N3012 P-N-P SILICON TRANSISTORS B U L L E T IN NO. O L S 645051, A U G U S T 1964 DESIGNED FOR HIGH-SPEED SWITCHING APPLICATIONS • Guaranteed VCE|>ot| 0 .5 v Max at 100ma • High f , - 400 Me Min "m echanical d ata T H E COLLECTOR IS IN E L E C T R IC A L


    OCR Scan     		PDF 2N3012 100ma 2N2894 2N3012M

    2N3012

    Abstract: No abstract text available
    Text: MOTOROLA SC XSTRS/R F igE D | b3b7ESM OOflba^O T | 2N3012 CASE 22-03, STYLE 1 TO-18 TO-206AA M A X IM U M RATINGS Sym bol Value Unit Collector-Emitter Voltage V cEO 12 Vdc Collector-Base Voltage VcBO 12 Vdc Emitter-Base Voltage Ve b O 4.0 Vdc Collector Current — Continuous


    OCR Scan     		PDF 2N3012 O-206AA) 2N869A 2N3012

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    NS3762

    Abstract: PN4258
    Text: {DISCRETE} £> 3 2 CM CO CM CM in to ICO 100 100 90 co o CO 20 20 10 o o o § 300 250 0 ID CO CO CO 25 o 30 o o CO > o o • »J o c 1- 40Ö , o o s t i l l 0 ■> U3 c ▼* <0 (£> - 5 O S- O C PJ ! S CO 3 0 c T- O * if > in CM 0 I o r - Ci o c 00 r- id


    OCR Scan     		PDF

    2N4260

    Abstract: 2N3829 BFT29 BFT30 BFT31 BFT39 BFT40 BFT41 BFT53 BFY50
    Text: s[^pT e x a s Discrete Semiconductors In s tru m e n ts Polarity High Current NPN Amplifiers Device Type Case Maximum ratings BV BV BV CBO CEO EBO ICM mA V V V hFE1 hFE2 1C fT 1C mA min. min. max. MHz max. mA 250 250 300 1000 1000 1000 20 25 25 — 1000 1000


    OCR Scan     		PDF BFT39 BFT29 BFT40 BFT30 BFT41 BFT31 BFY50 BFT53 BFY51 BFT54 2N4260 2N3829

    3012

    Abstract: 2N2894 2N3012 2N3209
    Text: 2N 2894 2N 3012 2N 3209 SILICON PLANAR PNP HIGH-SPEED SATU RATED SWITCHES The 2N 2894, 2N 3012 and 2N 3209 are silicon planar epitaxial PNP transistors in Jedec TO -18 metal case, intended for high speed, low saturation switching applications up to 100 mA.


    OCR Scan     		PDF 2N3209 3012 2N2894 2N3012 2N3209

    silect

    Abstract: 2S503 N4060 bc182l 2N2483 2N3707 2N3709 2N929 2N930 2S501
    Text: Silicon Transistors T ype C ase No. C o ^ <u M axim um R a tin g s at25°C amb. S P E C IA L C h a ra c te ris tic s FEATURES p <0 c a> o « O w fT h FE V CE SAT ' V CB V CE V EB V V V A M in. P.o, w Max. mA mA M in. 'c *B Max. M c/s mA mA V N PN Low Level


    OCR Scan     		PDF 2N929 2N930 2N2483 N2484 2S501 2S502 2S503 2N3707 2N3012 TIS50 silect N4060 bc182l 2N3709

    2n3298

    Abstract: 2N2360 2n2694 2N3208 2N321 2N321D IN219 2N2195B 2n2888 2N1613
    Text: jGmitronicr Sem itronics Corp. SEMICONDUCTORS metal can transistors cont’d silicon small signal transistors Maximum Ratings O m ite Type Package Po V cb VC E Ambient Volts Volts mW Electrical Characteristics @ 25 C V c e Sat @ Ic /ls V eb 1>FE Volts Min/Max


    OCR Scan     		PDF 2N1613 2N16I3A 2N1613B 2N17I1 2N17IIA 2N3725A 2N3947 2N40B0 2N4137 2N4207 2n3298 2N2360 2n2694 2N3208 2N321 2N321D IN219 2N2195B 2n2888

    MMBF112L

    Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
    Text: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty


    OCR Scan     		PDF 06050L MMBD914L BAS16L BAL99L MBAV70L MBAV99L MBAV74 BD2835XL MBD2836XL MMBD2837XL MMBF112L MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211

    Untitled

    Abstract: No abstract text available
    Text: ' T •typeNo. Package vCEO ■c cont hF E @ V c e /Ic *T Pd HI-REL HI-REL HI-REL SCREEN SCREEN NPNP PNP NPN NPN NPN T039 T018 T018 T039 T039 12 20 80 80 0.2 0.2 1 1 30-120 30-120 80min 30min 0.5/30m 0.4/30m 5/lra 5/lm 400M 350M 100M 80M 0.36 0.36 0.8 0.8


    OCR Scan     		PDF 2N3008 2N3012 2N3014 2N3019 2N3020 80min 30min 5/30m 4/30m 2N3036

    TFK 404

    Abstract: T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09
    Text: S IL IC O N T R A N S IS T O R S PN P Fast Switches N PN Fast: Switches D e v ic e B S X 27 T IS 4 4 T IS 45 T IS 46 T IS 47 T IS 48 T IS 49 Page 96 166 168 170 172 172 174 D e v ice Page T I S 51 T IS 52 T IS 55 2N 706A 2N 708 2N 753 2N 914 178 180 185 317


    OCR Scan     		PDF 20nttc* 10N12* TFK 404 T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


    OCR Scan     		PDF

    2N2800

    Abstract: 2N2801 2N2837 2N2838 2N2904 2N2904A 2N2905 2N2905A 2N2906 2N2906A
    Text: ti CENTRAL SEM ICON DU CTOR : 1 V Ö VV OJ U CINI RAL D E I nû'î'JtiB ODDOSSG 3 T ¿ .ir n n ^ v n StrtlCUNÜUtTÜR an r * * / « •* VCE V eb hFE at •c V V V min max mA V 2N2800 2N2801 2N2837 2N2838 -2N2904 50 50 50 50 60 35 35 35 35 40 5 5 5 5 5


    OCR Scan     		PDF 2N2800 2N2801 2N2837 2N2838 -2N2904 2N2904A 2N2905 2N2905A CBR30 0000s23 2N2904 2N2906 2N2906A

    2N9308

    Abstract: 2N221BA 2N69S 2N3304 2M2193 2NI893 2N4080 2N236S 2N408 2N238
    Text: INTEX/ SEMITRôNICS CORP 27E D T-A 7 - 0 [ 4ñLTSMb 00DDS7Ì t J E m iE T D F l Sem itronics Corp. SEMICONDUCTORS metal can transistors silicon sm all signal transistors Msxinium Ratines Device 2N497 2N49B 2N65S 2H657 Type NPN NPN NPN NPN NPN- Package TO 5


    OCR Scan     		PDF 00DDS7Ã T-A7-01 2N497 12/3S 30/S9 2N3725A 2N3947 2N4080 2N4137 2N4207 2N9308 2N221BA 2N69S 2N3304 2M2193 2NI893 2N236S 2N408 2N238

    TRIAC 97A6

    Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
    Text: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1


    OCR Scan     		PDF OD-80 OD-323 OT-23 OT-89 OT-143 OT-223 OT-323 TRIAC 97A6 S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C

    AL102 ATES

    Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
    Text: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible


    OCR Scan     		PDF Trans-611 DT1521 2N2270 BC107-182KS ESC182KAS ESC182KBS ESC1Q8-183KS EiC183KBS 8C183KCS BC109-184KS AL102 ATES 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29

    BF195 equivalent

    Abstract: bf197 2N3680 BF173 transistor bf 175 BC413 BFY39 BF256 transistor bf194 ke4416
    Text: Introduction This is N ational S em iconducto r's latest handbook on discrete sem i­ co nd u ctor devices. Y o u w ill notice th at the co m p any has added more than 350 transistor part numbers and three p ro d u ct fam ilies since pub lication o f the last handbook in 1971. M any o f these new products


    OCR Scan     		PDF