2N2906A Search Results

2N2907A

Abstract: 2N2906AUBC 2N2907AUB 2N2906A 2N2907A JANTX 2N2907AUBC 10VDC 2N2906AL 2N2906AUA 2N2906AUB
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com PNP SMALL SIGNAL SILICON TRANSISTOR Qualified per MIL-PRF-19500/291 DEVICES LEVELS 2N2906A 2N2906AL 2N2906AUA 2N2906AUB

2N2906AUB JANTXV

Abstract: 2N2906AUB 2N2906AUBJ 2N2906AUBJS
Contextual Info: 2N2906AUB Silicon PNP Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power • PNP silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N2906AUBJ • JANTX level (2N2906AUBJX)

Contextual Info: 2N2906A Silicon PNP Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power • PNP silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N2906AJ • JANTX level (2N2906AJX)

2N2906AUB JANTX

Contextual Info: 2N2906AUB Silicon PNP Transistor Data Sheet Description Applications SEMICOA Corporation offers: • General purpose • Low power • PNP silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N2906AUBJ • JANTX level (2N2906AUBJX)

BCY72 MOTOROLA

Abstract: 2N4405 N4026 BC178 BC179 transistor 2N4033 2N2906 2N2906A N3963 2N3799
Contextual Info: METAL SMALL-SIGNAL TRANSISTORS continued General-Purpose Amplifiers (continued) Package v (BR)CEO Volts Min fT MHz Min 2 N 3963 2N4026 2N4029 2N3799 2N2906A# 2N2907Af 2N3964 BC177 80 80 80 60 60 60 45 45 BCY79 @ i •c lc mA mA Max Min 40 100 150 30 200

tn-59

Abstract: 2222 NPN N 2222 2N2221 2N2221A 2N2222A 2N2369 2N2906 2N2906A 2N2907
Contextual Info: A/Ietal-Encased SPRAGUE Silicon SEPT T ran sistors HIGH-SPEED, MEDIUM CURRENT Type No. 2N2221 2N2221A 2N2222 2N2222A 2N2369 2N2906 2N2906A 2N2907 2N2907A 2N3115 2N3116 2N3135 2N3136 TN-54 TN-60 TN-62 TN-64 TQ-60 TQ-62 TQ-64 2N1469 2 N1469A 2N2218 2N2218A

2N2906ACSM

Contextual Info: 2N2906ACSM Dimensions in mm inches . 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) Bipolar PNP Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications 0.31 rad. (0.012) 2 0.76 ± 0.15 (0.03 ± 0.006)

Contextual Info: M aximum R atings Type No. E lectrical C haracteristics Ta=25"C, Unless O ttw w iM SpacHted hFE e Min Max 15 20 0.36 0.005 15 35 0.36 0.025 10 20 30 'ceo (V) Min CEO PD (V) Min (W) 0Tc=25°c 2N869 25 18 0.36 0.01 2N995 20 15 2N2696 25 25 2N2894 2N2906 2N2906A

2N3055E specification

Abstract: 2N3350 2N3904D 2N3904DCSM 2n2894 2N3680 2N2222ADCSM 2N3347 2N2993 T05 Package
Contextual Info: BS/CECC Type No. Polarity 2N 2906\ CV-0 PNP 2N2906A; PNP 1CV' ° 2N2907 1 f f j CV-0 PNP CV-0 PNP 2N2907A 2N2913y 1 50002-186 NPN Dual '2N3054 >2N3055 / ^2N3055E r rX2N3209 1 ^¿2N3209L / • ° 50004-042 50003-020 50004-XXX 50004-XXX 2N3347 2N3348 2N3349

Contextual Info: 2N 2906 PN 2906 M • 2N2906A • PN2906A PNP SILICON GENERAL PURPOSE AMPLIFIERS AND SWITCHES 1 CASE TO-18 THE 2TT2906, 2N2906A, PN2906, PN2906A ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SFEET SWITCHING APPLICATIONS. THEY ARE

2N4033

Abstract: 2N2905 2N3702
Contextual Info: Medium Power Amplifiers and Switches MAXIMUM RATINGS POLA­ RITY CASE 2N2838 2N2868 2N2897 2N2904 2N2905 P N N P P 2N2905A 2N2906 2N2906A 2N2907 2N2907A TYPE NO. H FE Vc, COMPLE­ C* h min max MENTARY MHz (MHz) TYPE max (mA) VcE (V) (V) (A) 225 120 200 120

Contextual Info: SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N2906A • Low Power • Hermetic TO-18 Metal package. • Ideally suited for High Speed Switching and General Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated

transistor 2N2906

Abstract: 2N2906A 2N2906AJ 2N2906AJS 2N2906AJV 2N2906AJX Semicoa Semiconductors
Contextual Info: 2N2906A Silicon PNP Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power • PNP silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N2906AJ • JANTX level (2N2906AJX)

2N2906ACSM

Abstract: LE17
Contextual Info: SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N2906ACSM • Low Power • Hermetic Ceramic Surface Mount Package. • Ideally suited for High Speed Switching and General Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated

2N2907

Abstract: 2n2907a 2n2906 2N2906A 2N2907A PNP Transistor 2n2907 TRANSISTOR PNP transistor 2N2907
Contextual Info: 2N2906 2N2907 2N2906A 2N2907A PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2906, 2N2907 series types are silicon PNP epitaxial planar transistors designed for small signal, general purpose switching applications.

TO-18 amps pnp transistor

Abstract: BC107 BC108
Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PNP TRANSISTOR TO-18 PACKAGE DEVICE TYPE V ceo sus VOLTS (max) AMPS TO-18 T0206AA 2N2906 2N2906AA 2N2907 2N2907AA 2N3250AA 2N3251AA 2N3496 2N3497 2N3798 2N3799 2N3962 2N3963 2N3964 2N3965 2N4026 2N4027 2N4028 2N4029

Contextual Info: 3Q E D 7 T 5 T 2 3 7 0 0 3 1 1 4 5 7 S C S -T H O M S O N *>7# [*^ 6&I(OT(q * S 1 • ~ T ' 2 T ? - / S 2N2904A-2N2905A 2N2906A-2N2907A T I T S-THOMSON GENERAL PURPOSE AMPLIFIERS AND SWITCHES DESCRIPTIO N The 2N2904A, 2N29Q5A, 2N2906A and 2N2907A are silicon planar epitaxial PNP transistors in Jedec

*2N2920* LCC

Abstract: 2N2920* LCC 2N2222AUB 2N2907AUB 2N2906AUB
Contextual Info: SURFACE MOUNT CATALOGUE SURFACE MOUNT DEVICES CERAMIC LCC MIL-PRF-19500 QUALIFIED DEVICES SMALL SIGNAL - NPN * SMALL SIGNAL - PNP * 2N2221AUA 2N2222AUA 2N2221AUB 2N2222AUB 2N3700UB 2N2906AUB 2N2907AUB DUAL PACK TRANSISTORS* 2N2060U 2N4854U 2N5793U 2N5794U

2N2906ADCSM

Contextual Info: 2N2906ADCSM Dimensions in mm inches . 1 4 A 6 5 6.22 ± 0.13 (0.245 ± 0.005) 0.23 rad. (0.009) A = 1.27 ± 0.13 (0.05 ± 0.005) LCC2 (MO-041BB) Pinouts Pin 1 – Collector 1 Pin 2 – Base 1 Pin 3 – Base 2 Parameter 4.32 ± 0.13 (0.170 ± 0.005) 3 2 1.40 ± 0.15

2N2907A

Abstract: CDIL 2n2907a 2N2906A
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR SWITCHING TRANSISTORS 2N2906A 2N2907A TO-18 Switching And Linear Application DC to VHF Amplifier Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION

Contextual Info: 2N2906A Silicon PNP Transistor Data Sheet Description Applications SEMICOA Corporation offers: • General purpose • Low power • PNP silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N2906AJ • JANTX level (2N2906AJX)

2N2906A

Abstract: LE17
Contextual Info: SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N2906A • Low Power • Hermetic TO-18 Metal package. • Ideally suited for High Speed Switching and General Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated

2N2907A

Abstract: 2N2907A surface mount 2n2907aub 2N2906A transistor ub t JANS2N2907A 2N2907A PNP Transistor equivalent 2N2907A 2N2906AL 2N2907A JANTX
Contextual Info: TECHNICAL DATA PNP SMALL SIGNAL SILICON TRANSISTOR Qualified per MIL-PRF-19500/291 Devices 2N2906A 2N2906AL 2N2906AUA 2N2906AUB Qualified Level JAN JANTX JANTXV JANS 2N2907A 2N2907AL 2N2907AUA 2N2907AUB MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage

JANS2N2907AUB

Abstract: 2N2907AUB
Contextual Info: TECHNICAL DATA 2N2906A, L JAN, JTX, JTXV, JANS 2N2906AUA JAN, JTX, JTXV, JANS 2N2906AUB JAN, JTX, JTXV, JANS 2N2907A, L JAN, JTX, JTXV, JANS 2N2907AUA JAN, JTX, JTXV, JANS 2N2907AUB JAN, JTX, JTXV, JANS MIL-PRF QML DEVICES Processed per MIL-PRF-19500/291 PNP SILICON SMALL-SIGNAL TRANSISTORS