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    2N929 Price and Stock

    Central Semiconductor Corp 2N929A

    Trans GP BJT NPN 60V 30mA 3-Pin TO-18 Box - Boxed Product (Development Kits) (Alt: 2N929A)
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    Central Semiconductor Corp 2N929A TIN/LEAD

    Transistor GP BJT NPN 60V 30mA 3-Pin TO-18 Box - Boxed Product (Development Kits) (Alt: 2N929A TIN/LEAD)
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    Mouser Electronics 2N929A TIN/LEAD
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    Central Semiconductor Corp 2N929A PBFREE

    Transistor GP BJT NPN 60V 30mA 3-Pin TO-18 Box - Boxed Product (Development Kits) (Alt: 2N929A PBFREE)
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    General Electric Company 2N929A

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    Bristol Electronics 2N929A 28
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    TE Connectivity 2N929

    TRANSISTOR,BJT,NPN,45V V(BR)CEO,30MA I(C),TO-18
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    Quest Components 2N929 173
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    2N929 Datasheets (86)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N929 Semelab Bipolar NPN Device in a Hermetically Sealed TO18 Metal Package - Pol=NPN / Pkg=TO18 / Vceo=45 / Ic=30m / Hfe=40-120 / fT(Hz)=30M / Pwr(W)=0.3 Original PDF
    2N929 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
    2N929 Bharat Electronics Transistor Selection Guide Scan PDF
    2N929 Central Semiconductor NPN METAL-CAN SATURATED SWITCH / LOW NOISE LEVEL AMPLIFIER Scan PDF
    2N929 Continental Device India Semiconductor Device Data Book 1996 Scan PDF
    2N929 Crimson Semiconductor Transistor Selection Guide Scan PDF
    2N929 Ferranti Semiconductors Quick Reference Guide 1985 Scan PDF
    2N929 Ferranti Semiconductors Metal Can Transistors (Short Form) Scan PDF
    2N929 Ferranti Semiconductors Shortform Data Book 1971 Short Form PDF
    2N929 General Diode Transistor Selection Guide Scan PDF
    2N929 General Electric Semiconductor Data Book 1971 Scan PDF
    2N929 ITT Semiconductors Semiconductor Summary 1969 Scan PDF
    2N929 Micro Electronics Semiconductor Device Data Book Scan PDF
    2N929 Micro Electronics Semiconductor Devices Scan PDF
    2N929 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N929 Motorola The European Selection Data Book 1976 Scan PDF
    2N929 Motorola Low Level and General Purpose Amplifiers Scan PDF
    2N929 Unknown Shortform Electronic Component Datasheets Short Form PDF
    2N929 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N929 Unknown Vintage Transistor Datasheets Scan PDF

    2N929 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N929

    Abstract: 2N929 JAN
    Text: 2N929 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 45V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.03A All Semelab hermetically sealed products


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    PDF 2N929 O206AA) 5/10u 2-Aug-02 2N929 2N929 JAN

    2N929

    Abstract: No abstract text available
    Text: 2N929 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 45V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.03A All Semelab hermetically sealed products


    Original
    PDF 2N929 O206AA) 5/10u 16-Jul-02 2N929

    2n929

    Abstract: No abstract text available
    Text: 2N929 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 45V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.03A All Semelab hermetically sealed products


    Original
    PDF 2N929 O206AA) 5/10u 19-Jun-02 2n929

    2N929

    Abstract: 2N929/M02157A
    Text: 2N929 Si NPN Lo-Pwr BJT 10.00 Transistors Transistors Bipolar Si NPN Low-Power Bi. Page 1 of 1 Enter Your Part # Home Part Number: 2N929 Online Store 2N929 Diodes Si N P N Lo -Pw r B JT Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics


    Original
    PDF 2N929 2N929 com/2n929 2N929/M02157A

    2n2301

    Abstract: 2N4001 diode d880 2N3051 2N2B31 2N125 Ti D880 NPN 2N70j transistor d880 2N1815
    Text: . GENERAL DIODE CORP d T J 3 f l b T 72 0 Sb GD OOB D 4 ö | 7 - - 2-*? ~ D SILICON P L A N A R TRANSISTO RS — S M A L L SIG N A L VI TYPE 2N72» 2N727 2N8E9 2N869A 2N92S 300 •300 360 360 300 2N929A 2N930 2N930A 2N1S72 2N1573 NPN NPN NPN NPN NPN • 2N1S74


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    PDF 2N727 2N869A 2N929A 2N930' 2N930A 2N1572 2N1S73 2N1574 2N24S3 2N2484 2n2301 2N4001 diode d880 2N3051 2N2B31 2N125 Ti D880 NPN 2N70j transistor d880 2N1815

    2N5133

    Abstract: 2N3565
    Text: This NPN Transistors NATL 2N929 Case Style TO-18 VCBO v CEO V ebo V (V) (V) Min Min Min 45 45 5 'CB0 VCB (nA)@ “ Max 11 10 hFE Min Max 45 350 By 60 40 2N929A TO-18 60 45 6 2 Its 60 40 25 45 45 5 10 45 600 150 100 TO-18 60 60 6 10 45 60 60 6 10 45 2N3246


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    2N2711

    Abstract: No abstract text available
    Text: Low Level and General Purpose Amplifiers H,re CASI 2N929A 2N930 2N930A 2N2511 2N2586 N N N N N TO-18 TO-18 TO-18 TO-18 TO-18 500 500 500 360 300 30 30 30 200 100 45 45 45 50 45 45 100 100 240 120 2N2605 2N2711 SN2712 2N2714 2N2716 P N N N N TO-18 TO-92B TO-92B


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    PDF 2N929A 2N930 2N930A 2N2511 2N2586 2N2605 2N2711 SN2712 2N2714 2N2716

    Untitled

    Abstract: No abstract text available
    Text: TO-18 Metal-Can Package Transistors NPN Electrical Characteristics (Ta=25'C, Unless Otherwise Specified) Maximum Ratings Type No. Pd (W) 0Tc=25°c ^C8Q (V) Min ^GEO ^EBO (V) Min (V) Min 2N915 70 50 5 0.36 2N916 45 25 5 0.36 2N929 45 45 5 0.5 ^CM *C80 ^C B


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    PDF 2N915 2N916 2N929 2N930 BC109C BCY56 BCY57 BCY58 BCY58-10 BCY58-7

    BC107C

    Abstract: BC107 BC108A 2N915 bc109 BCY56 2N916 2N929 2N930 BC107A
    Text: an Package Transistors NPN Maximum Ratings Type No. Pd (W) Tc=25"c Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) ^CBO ^CEO ^EBO (V) Min (V) Min (V) Min 2N915 70 50 5' 0.36 2N916 45 25 5 0.36 0.2 2N929 45 45 5 0.5 0.03 (A) 'cM 'cBO (A)


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    PDF 2N915 2N916 2N929 2N930 BC109C BCY56 BCY57 BCY58 BCYS8-10 BCY58-7 BC107C BC107 BC108A bc109 BC107A

    2N929

    Abstract: No abstract text available
    Text: TYPES 2N929, 2N930 N-P-N SILICON TRANSISTORS B U L L E T I N N O . D L -S 6 S 3 S 6 3 , M A Y 1 9 6 3 - R E V I S E D S E P T E M B E R 1 9 6 5 FOR 10W-LEVU, 10W-N0ISE, HIGH-GAIN, AMPURER APPLICATIONS * Guarani—d hFE at 10 pa, T* = — 55°C and 25*C * GuarantMd low-Nois* Choroctwisttc at 10 pa


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    PDF 2N929, 2N930 2N929

    sf317

    Abstract: SCR 2N1595
    Text: PQWEREX INC 74 DE I 7 2 ^ 4 ^ 5 3 DDP1341 SCR ÖT T-i$' // ” I 2 N 1 5 9 5 -9 9 I 2N929 S E E GES929 2N930 S E E GES930 The 2N1595 series of Silicon Controlled Rectifiers are planar-passivated, all-diffused, three junction, reverse blocking triode thyristors for low power switching and con­


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    PDF DDP1341 2N929 GES929 2N930 GES930 2N1595 2N2322 sf317 SCR 2N1595

    BC377

    Abstract: 2N918CSM
    Text: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES T yp eN o 2N918 2N918ACSM 2N918AQF 2N918CSM 2N929 2N930 2N930A 2N930CSM 25012 25013 2S013A 25024 25025 25026 25033 25034 25035 25036 25103 25104 2S301A 2S302A 2S303A 2S304A 2S305A 2S307A B DX70 BAS 16CSM


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    PDF 2N918 2N918ACSM 2N918AQF 2N918CSM 2N929 2N930 2N930A 2N930CSM 2S013A 2S301A BC377

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    UM9C

    Abstract: J 2N930 2N2242 2N2368 2N2369 2N2369A 2N2410 2N2481 2N2501 2N2651
    Text: NPN METAL CAN «-V TYPE NO. VCB VCE V EB hFE at •c VCE - D Ë J n f l T l t B OQQQHlö 5 SATURATED SWITCH Cont'd, VCE(s) at 2 } lc fT Cob ton to ff mA MHz pF nS nS 10 0.85 0.85 1.5 150 250 400 500 50 200 6 4 4 4 11 12 12 12 - 25 15 18 18 55 V V V min ma


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    PDF DDDQS16 2N2242 2N2368 2N2369 2N2369A 2N2410 N2475 2N2481 2N2501 2N2651 UM9C J 2N930 2N2651

    MPS9631

    Abstract: T1S91 MPS9632 MPS9630 TIS92 MPS9633 SE4010 TIS61 MPS9600 MPS9634
    Text: Low Level and General Purpose Amplifiers TYPE POLA­ NO. RITY MPS9600 MPS9601 MPS9602 MPS9630 MPS9631 N N N N N CASE TO-92A TO-92A TO-92A TO-92A TO-92A VCE sat HFE MAXIMUM RATINGS Pd IC VCEO (mW) (mA) (V) min max 300 300 300 350 350 100 100 100 100 100 12


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    PDF MPS9600 O-92A MPS9601 MPS9602 MPS9630 MPS9631 T1S91 MPS9632 TIS92 MPS9633 SE4010 TIS61 MPS9634

    bc140

    Abstract: 2n1711 complement 2N1893 2N2102 2N2405 2N4036 BFX84 BFX85 ZT86 ZT88
    Text: NPN GENERAL PURPOSE TA B LE1 NPN SILICON PLANAR G EN ER A L P U R P O S E T R A N S IST O R S The devices shown in this table are general purpose transistors designed for small and medium signal, low and medium power amplification from D.C. to radio frequencies in Commercial,


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    PDF BCY79 2N929 2N930 2N2219A 2N2905A 2N2222A 2N2907A ZT181 ZT182 BCY58 bc140 2n1711 complement 2N1893 2N2102 2N2405 2N4036 BFX84 BFX85 ZT86 ZT88

    N706A

    Abstract: BC107 N706 N3053 BC178 2N1131 2n3053 2N4037 2N696 2N697
    Text: NPN G EN ER A L P U R P O S E - Continued Type 2 N3053 Vc b Vc e O Max ic Max VcE sat at ic mA Ib mA 15 V V mA 60 40 700 1 •4 150 V hFE Min Max Min iff at at P tot at Tamb ic ic = 25°C mA MHz mA mW 50 250 150 100 50 Package Comple­ ment 1000 TO -39 2N4037


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    PDF N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BC107 BC177 BCY59 N706A N706 BC178 2N1131 2n3053 2N4037

    A9 npn

    Abstract: GES93 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE V C E sa t E b v CEO Device Type @ 1 0 m A -(V) Min. M ax. @ l c (m A) 10 10 10 10 2 •BaBB B B i» « ¡■ M l ■ M M ■ ■ ■ I 300 350 250 300 300 25 ?.5 2.5 2.5 2.5 200


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    PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 A9 npn GES93

    2N3568

    Abstract: 2N3569 2N702 2N2406 2N2539 2N2407 2N3565 2N3638 2N1470 2N2224
    Text: J325835_4 ADVANCED SEMICONDUCTOR SILICON A D V A N C E D TRANSISTORS SEMICONDUCTOR P D @ T c = 25°C DEVICE TYPE NO. POLARITY 2N329A 2N332 2N333 2N334 2N335 2N336 2N337 2N338 2N339 2N340 2N341 2N342 2N343 2N478 2N479 2N479A 2N480 2N480A 2N541 2N542 2N543 2N545


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    PDF 2N329A 2N332 2N333 2N334 2N335 2N336 2N337 2N338 2N339 2N340 2N3568 2N3569 2N702 2N2406 2N2539 2N2407 2N3565 2N3638 2N1470 2N2224

    2N5309

    Abstract: 2N4256 2N4424 2N4425 2N5174 2N5232 2N5232A 2N5249A 2N5305 2N5306
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVCeo @ 10mA V hFE Min.-Max. @ IC, V C E (V> (V) Max. Typical (MHz) C cb @10V 1 MHz Typical (Pf) @ 25° C (mW) fT V C E (S A T ) l c . *B PT 2N4256 2N4424 2N4425 NPN NPN NPN


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    PDF 2N4256 2N4424 2N4425 130-b40 2IM5172 2N5174 2N5232 2N5232A 2N5249A 012ySC 2N5309 2N5305 2N5306

    SE4010

    Abstract: 2N3565 TIS92 2N3692 TIS90 2N2924 PN3565 PN3566 PN3694 PN4249
    Text: TYPE NO. P O L A R IT Y Low Level and General Purpose Amplifiers CASE M A X IM U M R A T IN G S Pd mW 'c (m A | V CE(SAT) h fe V CEO (V) min max 'c (m A) V CE (V) max (V) 'c (m A ) fT m in (MHz) Cob N.F. max max (pF) (dB) PN3565 PN3566 PN3694 PN4249 PN4250


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    PDF PN3565 O-92A PN3566 PN3694 PN4249 PN4250 SE4010 2N3565 TIS92 2N3692 TIS90 2N2924

    BC177 NPN transistor

    Abstract: BC178 TRANSISTOR bc108 bc325 bf179 BF177 transistor NPN BC178 applications of Transistor BC108 BC326 BFQ35
    Text: Metal Can Metal Can Product Variations Low Level General Purpose Am plifiers TO-5, TO-39 and TO-18 can be supplied with several variations from standard. Device Type Lead Length The standard lead length is 12,7mm 0,5in . Certain types are available with longer leads— 38,1mm (1,5in) at a small extra


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    PDF BCW35GP. BFQ36 BF257/8/9 BFQ37 2N2218 2N2904 2N2218A 2N2904A 2N2219 2N2905 BC177 NPN transistor BC178 TRANSISTOR bc108 bc325 bf179 BF177 transistor NPN BC178 applications of Transistor BC108 BC326 BFQ35

    C495 transistor

    Abstract: C735 transistor c638 transistor C756 TRANSISTOR transistor c495 C644 transistor PNP Transistor 2N2222 equivalent transistor c735 c637 transistor transistor c633
    Text: Metal Can Metal Can Product Variations Low Level General Purpose Am plifiers TO-5, TO-39 and TO-18 can be supplied with several variations from standard. Device Type Lead Length The standard lead length is 12,7mm 0,5in . Certain types are available with longer leads— 38,1mm (1,5in) at a sm all extra


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    PDF BCW35GP. BS9300 2N2219A 2N2221 2N2222 2N2221A fT018 C495 transistor C735 transistor c638 transistor C756 TRANSISTOR transistor c495 C644 transistor PNP Transistor 2N2222 equivalent transistor c735 c637 transistor transistor c633

    C735

    Abstract: C749 NPN C460 C644 BS9300 c495 C-725 CV7580 c496 c727
    Text: 7 BS9000 Converted CV Case Outlines Small Signal Transistors . B S Type Number Com m ercial Equivalent Case Outline Polarity Ab solute Maximum Rating VCB V VCE V h F E at Co llecto r Current VEB V hFE min. hFE max. 1C mA M in. fT MHz Com m ents 0-76 0 -4 8 0


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    PDF BS9000 8S9300 BS9300 2N2221A' 2N2222A* 2N1893 2N1613 C735 C749 NPN C460 C644 c495 C-725 CV7580 c496 c727