2N930A Search Results

2N930

Abstract: 2N930A
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTORS 2N930 2N930A TO-18 Metal Can Package Low Noise Transistors ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage SYMBOL VCEO

Contextual Info: 2N930A Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 45V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.03A All Semelab hermetically sealed products

2n2301

Abstract: 2N4001 diode d880 2N3051 2N2B31 2N125 Ti D880 NPN 2N70j transistor d880 2N1815
Contextual Info: . GENERAL DIODE CORP d T J 3 f l b T 72 0 Sb GD OOB D 4 ö | 7 - - 2-*? ~ D SILICON P L A N A R TRANSISTO RS — S M A L L SIG N A L VI TYPE 2N72» 2N727 2N8E9 2N869A 2N92S 300 •300 360 360 300 2N929A 2N930 2N930A 2N1S72 2N1573 NPN NPN NPN NPN NPN • 2N1S74

Contextual Info: 2N930A Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 45V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.03A All Semelab hermetically sealed products

2n930

Abstract: 2N930 Motorola 2N930A
Contextual Info: 2N930, A M AXIMUM RATINGS Symbol 2N930 2N930A Unit C o llector-E m itter Voltage Rating v CEO 45 45 Vdc Collector-Base Voltage VCBO 45 60 Vdc vebo 5.0 6.0 Em itter-Base Voltage C ollector C urrent Vdc >C 30 m Adc = 25 C PD 0.5 3.33 W mW'°C Total Device D issipation '</ T q = 25 C

2N930A

Contextual Info: 0 /V E F ^ IP 2N930A NEW ENGLAND SEMICONDUCTOR SILICON SMALL-SIGNAL NPN TRANSISTORS • LOW LEAKAGE • HIGH CURRENT GAIN • LOW SATURATION VOLTAGE M A X IM U M R A T IN G S R A T IN G S Collector-Em itter Voltage Collector-Base Voltage Emitter-Base Voltage

Contextual Info: 2N930A Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 45V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.03A All Semelab hermetically sealed products

2N2711

Contextual Info: Low Level and General Purpose Amplifiers H,re CASI 2N929A 2N930 2N930A 2N2511 2N2586 N N N N N TO-18 TO-18 TO-18 TO-18 TO-18 500 500 500 360 300 30 30 30 200 100 45 45 45 50 45 45 100 100 240 120 2N2605 2N2711 SN2712 2N2714 2N2716 P N N N N TO-18 TO-92B TO-92B

2N930A

Contextual Info: 2N930A BIPOLAR NPN SILICON AMPLIFIER TRANSISTORS MECHANICAL DATA Dimensions in mm inches 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) FEATURES 5.33 (0.210) 4.32 (0.170) • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 12.7 (0.500) min. • HERMETICALLY SEALED METAL PACKAGE

2N930

Abstract: 2N930A
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR TRANSISTORS 2N930 2N930A TO-18 Metal Can Package Low Noise Transistors ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage SYMBOL VCEO 2N930 45 2N930A

LM390

Contextual Info: 2N930A Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 2N930A Availability Online Store

2N930

Abstract: transistor 45 f 122 2N930A
Contextual Info: Datasheet ^ - — • tm 2N930 2N930A WCVIIill I Sem iconductor Corp. NPN SILICON TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 Manufacturers of JEDEC TO-18 CASE World Class Discrete Semiconductors DESCRIPTION:

Contextual Info: 2N930A Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)60 I(C) Max. (A)30m Absolute Max. Power Diss. (W)500m Maximum Operating Temp (øC)175þ I(CBO) Max. (A)2.0n @V(CBO) (V) (Test Condition)45 V(CE)sat Max. (V).50 @I(C) (A) (Test Condition)10m

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTORS 2N930 2N930A TO-18 Metal Can Package Low Noise Transistors ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage SYMBOL VCEO

2N930

Abstract: 2N930A
Contextual Info: Boca Semiconductor Corp. BSC 2N930, A M A X IM U M RATINGS Sym bol 2N930 2N930A U n it C o lle c t o r - E m it t e r V o lta g e VCEO 45 45 Vdc C o lle c to r - B a s e V o lta g e VCBO 45 60 Vdc E m itt e r - B a s e V o lta g e V e BO 5.0 6 .0 R a tin g

2N930

Contextual Info: 2N930, A M A X IM U M RATINGS Symbol 2N930 2N930A Unit C o lle cto r-E m itte r Voltage VCEO 45 45 Vdc C ollector-B ase V o ltage VCBO 45 60 Vdc Em itter-Base V o ltage vebo 5.0 6.0 Vdc Rating lC 30 m A dc Ty\ = 25cC Pd 0.5 3.33 W m W /T T o ta l Device D issipa tion a T q = 25°C

BC377

Abstract: 2N918CSM
Contextual Info: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES T yp eN o 2N918 2N918ACSM 2N918AQF 2N918CSM 2N929 2N930 2N930A 2N930CSM 25012 25013 2S013A 25024 25025 25026 25033 25034 25035 25036 25103 25104 2S301A 2S302A 2S303A 2S304A 2S305A 2S307A B DX70 BAS 16CSM

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

UM9C

Abstract: J 2N930 2N2242 2N2368 2N2369 2N2369A 2N2410 2N2481 2N2501 2N2651
Contextual Info: NPN METAL CAN «-V TYPE NO. VCB VCE V EB hFE at •c VCE - D Ë J n f l T l t B OQQQHlö 5 SATURATED SWITCH Cont'd, VCE(s) at 2 } lc fT Cob ton to ff mA MHz pF nS nS 10 0.85 0.85 1.5 150 250 400 500 50 200 6 4 4 4 11 12 12 12 - 25 15 18 18 55 V V V min ma

2n706 transistor

Abstract: transistor 2n706 2n2222 2N2222AA 2N706 2n2222 jan 03150 transistor transistor 2N2222 2N708 2N718
Contextual Info: N EW ENGLAND SEMICONDUCTOR SMALL SIGNAL NPN TRANSISTOR TO-18 sus VOLTS Ic (max) AMPS 2N706 15 0.05 2N708 15 - 2N718 40h 0.5 2N718AA 50 2N720A VcEO PACKAGE TO-18 T0206AA DEVICE TYPE @ It/ ^ CE min/max @ mA/V 1*FE c<je fx p (MHz) 20@10/1 0.6@10/1 6 200 30-120@10/l

MPS9631

Abstract: T1S91 MPS9632 MPS9630 TIS92 MPS9633 SE4010 TIS61 MPS9600 MPS9634
Contextual Info: Low Level and General Purpose Amplifiers TYPE POLA­ NO. RITY MPS9600 MPS9601 MPS9602 MPS9630 MPS9631 N N N N N CASE TO-92A TO-92A TO-92A TO-92A TO-92A VCE sat HFE MAXIMUM RATINGS Pd IC VCEO (mW) (mA) (V) min max 300 300 300 350 350 100 100 100 100 100 12

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2N3633

Contextual Info: CENTRAL SEMICONDUCTOR PE § QOOOSlfl 5 | NPN METAL CAN - SATURATED SWITCH Cont'd, VCB VCE V ge hFE at •c VCE Vc e (s) a* lc 2 } fT Cob ton to ff mA MHz pF nS nS 10 0.85 0.85 1.5 150 250 400 500 50 200 6 4 4 4 11 _ 12 12 12 - 25 15 18 18 55 i V V V min

JAN2N760A

Abstract: 2N3692 2n2510 2N3565
Contextual Info: N PN Transistors low I vel amps TVpe Case No Styla VCEO "eso IV! IV! M,n MIn IV! [ M,n Vcso MIn MIX VCEI . t VSEI .t! IV! 80 IV! Ma. NF Cob IpF! IdS! MIX Ma. Ma. 06 1.1 10 50 1 1 Test CondItIon Process No. 2N760 TO•18 45 45 200 30 76 333 1 5 2N760A TO'18