2N930 Search Results

2N930

Abstract: 2N930A
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTORS 2N930 2N930A TO-18 Metal Can Package Low Noise Transistors ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage SYMBOL VCEO

2N5548

Abstract: 2N930 TAA170 2000C 2N3548 2N950 2N354B
Contextual Info: 2N930 > 2N3548 COMPLEMENTARY SILICON AF LOW NOISE SMALL SIGNAL TRANSISTORS *- . • * :« ;- ïv - • .V 'i-w H § • n- ; -y\ ¿ “¡V •iKv*rlr CASE TO-18 NPN AND 2N3548 (FNP) ARE SILIC' TAXIAL TRANSISTORS FOR USE IN AF AL AMPLIFIERS AND DIRECT COUPLED

Contextual Info: 2N930A Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 45V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.03A All Semelab hermetically sealed products

2N930 JANTX

Contextual Info: 2N930 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 45V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.03A All Semelab hermetically sealed products

Contextual Info: 2N930 Silicon NPN Transistor Data Sheet Description Applications Semicoa Corporation offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N930J • JANTX level (2N930JX)

2n2301

Abstract: 2N4001 diode d880 2N3051 2N2B31 2N125 Ti D880 NPN 2N70j transistor d880 2N1815
Contextual Info: . GENERAL DIODE CORP d T J 3 f l b T 72 0 Sb GD OOB D 4 ö | 7 - - 2-*? ~ D SILICON P L A N A R TRANSISTO RS — S M A L L SIG N A L VI TYPE 2N72» 2N727 2N8E9 2N869A 2N92S 300 •300 360 360 300 2N929A 2N930 2N930A 2N1S72 2N1573 NPN NPN NPN NPN NPN • 2N1S74

Contextual Info: SEME 2N930CSM LAB HIGH SPEED, MEDIUM POWER, NPN GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR

JIDC

Contextual Info: SE M IC O N D U C T O R TECHNICAL DATA 2N930JAN, JTX Processed per MIL-S-19500/253 NPN Silicon Sm all-Signal Transistor CRYSTALOWCS 2805 Veterans Highway Suite 14 designed fot i o * powuf am putar applicano* RonkOTkOfTì*. N.Y. 11779 MAXIMUM R A T IN G S

Contextual Info: 2N930B Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)60 I(C) Max. (A)30m Absolute Max. Power Diss. (W)500m Maximum Operating Temp (øC)200þ I(CBO) Max. (A)2.0n @V(CBO) (V) (Test Condition)45 V(CE)sat Max. (V).50 @I(C) (A) (Test Condition)10m

Contextual Info: 2N930+JAN Transistors Si NPN Lo-Pwr BJT Military/High-RelY V BR CEO (V)45 V(BR)CBO (V)45 I(C) Max. (A)30m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)10n @V(CBO) (V) (Test Condition)45 V(CE)sat Max. (V)1.0 @I(C) (A) (Test Condition)10m

Contextual Info: ,6,62  /LF 46&/  Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR AMPLIFIER TRANSISTORS 2N930, A TO-18 Metal Can Package ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise DESCRIPTION

Contextual Info: 2N930/TNT Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)45 I(C) Max. (A)30m Absolute Max. Power Diss. (W)100m Maximum Operating Temp (øC) I(CBO) Max. (A)10n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

BC238

Abstract: BCY59A ZTX304 ZTX302 BC107A BC107B BC182 BC237 BC546A BC546B
Contextual Info: SEMICONDUCTOR DICE NPN SMALL SIGNAL TRANSISTORS V CBO V CEO IcBO Min. Min. Max. at V CB Volts Volts BC 546A BC546B Z TX304 BC Y65EA BC182 BC 107A BC107B BC237 BC 547A BC547B BC550B BC550C B C Y59A BC Y59B BCY59C BCY59D 2N930 Z TX303 BC183 BC184 ZTX302 ZTX301

2N930

Abstract: 2N930 JANTX
Contextual Info: 2N930 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N930J • JANTX level (2N930JX)

2N930

Contextual Info: TECHNICAL DATA NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/253 Devices Qualified Level 2N930 JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation

Contextual Info: 2N930A Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 45V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.03A All Semelab hermetically sealed products

Contextual Info: 2N930 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 45V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.03A All Semelab hermetically sealed products

2N930

Contextual Info: TECHNICAL DATA NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/253 Devices Qualified Level 2N930 JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation

2n930

Abstract: 2N930 Motorola 2N930A
Contextual Info: 2N930, A M AXIMUM RATINGS Symbol 2N930 2N930A Unit C o llector-E m itter Voltage Rating v CEO 45 45 Vdc Collector-Base Voltage VCBO 45 60 Vdc vebo 5.0 6.0 Em itter-Base Voltage C ollector C urrent Vdc >C 30 m Adc = 25 C PD 0.5 3.33 W mW'°C Total Device D issipation '</ T q = 25 C

2N930A

Contextual Info: 0 /V E F ^ IP 2N930A NEW ENGLAND SEMICONDUCTOR SILICON SMALL-SIGNAL NPN TRANSISTORS • LOW LEAKAGE • HIGH CURRENT GAIN • LOW SATURATION VOLTAGE M A X IM U M R A T IN G S R A T IN G S Collector-Em itter Voltage Collector-Base Voltage Emitter-Base Voltage

2N930 NPN transistor FREE

Abstract: 2n930
Contextual Info: 2N930 1 * 2 * - PHILIPS INTERNATIONAL 5LE D n _j L 7110flSb DDM25ti2 GST M P H I N N -P-N SILICON PLANAR TRANSISTOR N-P-N transistors in T O -18 metal envelopes w ith the collector connected to the case. These devices are prim arily intended fo r use in high performance, low-level, low-noise amplifier appli­

Contextual Info: 2N930A Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 45V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.03A All Semelab hermetically sealed products

Contextual Info: 2N930 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 45V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.03A All Semelab hermetically sealed products

2N2711

Contextual Info: Low Level and General Purpose Amplifiers H,re CASI 2N929A 2N930 2N930A 2N2511 2N2586 N N N N N TO-18 TO-18 TO-18 TO-18 TO-18 500 500 500 360 300 30 30 30 200 100 45 45 45 50 45 45 100 100 240 120 2N2605 2N2711 SN2712 2N2714 2N2716 P N N N N TO-18 TO-92B TO-92B