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    2N542 Price and Stock

    Microchip Technology Inc 2N5427

    TRANS PNP 80V 7A TO66
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    Microchip Technology Inc 2N5428

    NPN TRANSISTOR
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    Microchip Technology Inc 2N5429

    NPN TRANSISTOR
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    Central Semiconductor Corp 2N5427

    Power Transistor NPN 80V 7A 2-Pin TO-66 (Alt: 2N5427)
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    Central Semiconductor Corp 2N5429

    Power Transistor NPN 100V 7A 2-Pin TO-66 (Alt: 2N5429)
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    Find more 2N542 price and stock on Findchips.com

    2N542 Datasheets (222)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N542 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
    2N542 General Diode Transistor Selection Guide Scan PDF
    2N542 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N542 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N542 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N542 Unknown GE Transistor Specifications Scan PDF
    2N542 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N542 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N542 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N542 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N542 Unknown Vintage Transistor Datasheets Scan PDF
    2N5420 Allegro MicroSystems Bipolar transistor Scan PDF
    2N5420 General Electric Semiconductor Data Book 1971 Scan PDF
    2N5420 General Electric Semiconductor Data Handbook 1977 Scan PDF
    2N5420 Micro Electronics Semiconductor Device Data Book Scan PDF
    2N5420 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N5420 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N5420 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N5420 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N5420 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    ...

    2N542 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2N5429 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a


    Original     		PDF 2N5429 O213AA) 30-Jul-02

    2N5427

    Abstract: No abstract text available
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N5427 DESCRIPTION •Contunuous Collector Current-IC= 7A ·Low Collector-Emitter Saturation Voltage: VCE sat = 1.2V(Max) @IC= 7A ·Wide Area of Safe Operation APPLICATIONS ·Designed for switching and wide-band amplifier applications.


    Original     		PDF 2N5427 10MHz 2N5427

    2N3492

    Abstract: 2N5388 2N5389 TO61 2N3487 2N3488 2N3489 2N3490 2N3491 2N3879
    Text: Device Type 2N3879 2N3487 2N3488 2N3489 2N3490 2N3491 2N3492 2N5387 2N5388 2N5389 2N5427 2N5428 2N5429 2N5430 2N6077 2N6078 2N6079 VCEO V 75 60 80 100 60 80 100 200 250 300 80 80 100 100 275 250 350 hFE VCE @ IC (A) (sat) Max @ IC (A) Min/Max (V) 20/80 4.0


    Original     		PDF 2N3879 2N3487 2N3488 2N3489 2N3490 2N3491 2N3492 2N5387 2N5388 2N5389 2N3492 2N5388 2N5389 TO61 2N3487 2N3488 2N3489 2N3490 2N3491 2N3879

    2N5428

    Abstract: No abstract text available
    Text: 2N5428 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a


    Original     		PDF 2N5428 O213AA) 1-Aug-02 2N5428

    2N5430

    Abstract: 2N5428
    Text: SavantIC Semiconductor Product Specification 2N5428 2N5430 Silicon NPN Power Transistors DESCRIPTION •With TO-66 package ·Low collector saturation voltage : VCE sat =1.2V(Max)@IC=7A ·Excellent safe operating areas APPLICATIONS ·Designed for switching and wide-band


    Original     		PDF 2N5428 2N5430 2N5428 10MHz 2N5430

    T100n

    Abstract: 2N5428
    Text: 2N5428 80V NPN silicon medium-power transistor 12.50 Transistors Tra. 1 of 2 Home Part Number: 2N5428 Online Store 2N5428 Diodes 8 0 V NPN s ilic o n m edium - po w er t rans is t o r Transistors Enter code INTER3 at


    Original     		PDF 2N5428 com/2n5428 2N5428 T100n

    2N5427

    Abstract: No abstract text available
    Text: 2N5427 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a


    Original     		PDF 2N5427 O213AA) 1-Aug-02 2N5427

    2N5427

    Abstract: 2N5429
    Text: SavantIC Semiconductor Product Specification 2N5427 2N5429 Silicon NPN Power Transistors DESCRIPTION •With TO-66 package ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For switching and wide-band amplifier applications.


    Original     		PDF 2N5427 2N5429 2N5427 10MHz 2N5429

    b0725

    Abstract: 2SC2576 BU4090 2S01467 2S0141 2S0323 bu407F
    Text: POWER SILICON NPN Item Number Part Number I C 5 10 - 15 20 25 30 40 ~~~~:~J 2N5426 2N5476 2S01257 2S01271 2S01362 2S01411 2S0643 2S06430 2SD1237Q 2S01907 2S0569K 2S01237R 2S0643Y 2S01237S 1001416 100634 2S01356 250634 2SC697 2S0316 2S0316 2S0336 RCA1B06 2SC1666


    Original     		PDF 2S01467 BU407F BU407H BU4090 BU409 BU407 2SC3590 2SC3173 b0725 2SC2576 2S0141 2S0323 bu407F

    Untitled

    Abstract: No abstract text available
    Text: 2N5428A MECHANICAL DATA Dimensions in mm 6.35 0.250 8.64 (0.340) 3.68 (0.145) rad. max. 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 3.61 (0.142) 3.86 (0.145) rad. 14.48 (0.570) 14.99 (0.590) 24.33 (0.958) 24.43 (0.962) MEDIUM POWER NPN SILICON


    Original     		PDF 2N5428A 200mA)

    2N5428

    Abstract: No abstract text available
    Text: 2N5428 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a


    Original     		PDF 2N5428 O213AA) 30-Jul-02 2N5428

    Untitled

    Abstract: No abstract text available
    Text: 2N5427 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a


    Original     		PDF 2N5427 O213AA) 30-Jul-02

    2N5428A

    Abstract: No abstract text available
    Text: 2N5428A MECHANICAL DATA Dimensions in mm 6.35 0.250 8.64 (0.340) 3.68 (0.145) rad. max. 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 3.61 (0.142) 3.86 (0.145) rad. 14.48 (0.570) 14.99 (0.590) 24.33 (0.958) 24.43 (0.962) MEDIUM POWER NPN SILICON


    Original     		PDF 2N5428A 200mA) 2N5428A

    2N5429

    Abstract: No abstract text available
    Text: 2N5429 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a


    Original     		PDF 2N5429 O213AA) 1-Aug-02 2N5429

    BF460

    Abstract: BLY34 2n5213 2N3869 BLY33 motorola diode 2N3374 BF461 diode GG 14 G9090
    Text: RF POWER SILICON NPN Item Number Part Number I C 5 10 20 OKS22 TS1134 KN100 2S01211 BF460 BF461 BF462 2N3374 ~~~~j: 25 30 2N3924 2S01228M 2S01228M 2N3118 2N3119 2SC259O 2N5421 2N3309 ~~~~:A 35 • 40 2N3684 2N3684 2N5213 2N5213 2N5213 2N3869 C3·28 BLY34 ~t~~:


    Original     		PDF 2SC24 2SC1567 2SC1567A BLY11 2N3498 2N3499 MM2258 BF460 BLY34 2n5213 2N3869 BLY33 motorola diode 2N3374 BF461 diode GG 14 G9090

    Untitled

    Abstract: No abstract text available
    Text: CRIMSON SE MICO ND UC TO R INC TT D eTJI e SIMD^ b 0DQ0337 4 • . 2 5 1 4 0 9 6 C R I M S O N S E M I C O N D U C T O R INC 99 D 00 3 3 7 ! D ' ' f ' 3 3 - 0/ ! EPITAXIAL PLANAR - TO -66 NPN PNP BUR10 BUR11 BUR12 BUX77 2N4910 2N4911 2N4912 2 N5427 2N5428


    OCR Scan     		PDF 0DQ0337 BUR10 BUR11 BUR12 BUX77 2N4910 2N4911 2N4912 N5427 2N5428

    2N3568

    Abstract: 2N3569 2N702 2N2406 2N2539 2N2407 2N3565 2N3638 2N1470 2N2224
    Text: J325835_4 ADVANCED SEMICONDUCTOR SILICON A D V A N C E D TRANSISTORS SEMICONDUCTOR P D @ T c = 25°C DEVICE TYPE NO. POLARITY 2N329A 2N332 2N333 2N334 2N335 2N336 2N337 2N338 2N339 2N340 2N341 2N342 2N343 2N478 2N479 2N479A 2N480 2N480A 2N541 2N542 2N543 2N545


    OCR Scan     		PDF 2N329A 2N332 2N333 2N334 2N335 2N336 2N337 2N338 2N339 2N340 2N3568 2N3569 2N702 2N2406 2N2539 2N2407 2N3565 2N3638 2N1470 2N2224

    2N5430 MOTOROLA

    Abstract: 2443 MOTOROLA transistor IC CD 3102 2N5430 2N5428
    Text: MOTOROLA SC XSTRS/R 1HE F D § b3b?ES4 GDflMSMb 1 | MOTOROLA 2N5428 TECHNICAL DATA 2N5430 SEMICONDUCTOR thru 7 AM PERE MEDIUM-POWER NPN SILICON TRANSISTORS POWER TRANSISTORS NPN SILICON . . . designed for switching and wide-band amplifier applications. • Low Collector-Emitter Saturation Voltage —


    OCR Scan     		PDF 2N5428 2N5430 O-213AA C01LECT0R-EMITTER 2N5430 MOTOROLA 2443 MOTOROLA transistor IC CD 3102 2N5430 2N5428

    Untitled

    Abstract: No abstract text available
    Text: EPITA XIA L PLANAR - TO-66 PNP BUR10 BUR11 BUR12 BUX77 2N4910 2N4911 21-14912 2N5427 2N5428 2N5429 2NI5430 BUX78 2N4898 2N4899 2N4900 lc Vco V V cio (V) (A) P« (W) 100 300 200 100 40 60 80 80 80 100 100 80 200 120 80 40 60 80 80 80 100 100 5 20 10 5 4 4


    OCR Scan     		PDF BUR10 BUR11 BUR12 BUX77 2N4910 2N4911 2N5427 2N5428 2N5429 2NI5430

    2N4071

    Abstract: 2N6277 JANTXV 2N5626
    Text: BIPOLAR < O P EA K PACKAGE TO-213 10- 66 T0-204 (TO-3) DEVICE TYPE 2N4864 2N5598 2N5600 2N5602 2N5604 2N5606 2N5608 2N5610 2N5612 2N5661T 2N566J*’ 2N5664*' 2H5665*’ 2N5427 2N5428 2N5429 2N5430 bvceo •c VOLTS 120 60 80 80 100 60 80 80 100 200 300


    OCR Scan     		PDF 2N4864 2N5598 2N5600 2N5602 2N5604 2N5606 2N5608 2N5610 2N5612 2N5661T 2N4071 2N6277 JANTXV 2N5626

    2n5430

    Abstract: 411 00337 BDY57 BU912 TO-59 Package BOY90 BUR21 2N4898 2N4899 2N4900
    Text: CRIMSON SEMICONDUCTOR INC Ti DE | E S m D T b 2514096 CRIMSON SEMICONDUCTOR INC 99D 00337 D ' " T “ 33-0/ EPITA XIA L PLANAR - TO-66 NPN PN P BUR10 * BUR11 * BUR12 BUX77 2N4910 2N4911 2N4912 2 N5427 2N5428 2N5429 2N5430 BUX78 2N4898 2N4899 2N4900 «CM V


    OCR Scan     		PDF BUR10 BUR11 BUR12 BUX77 BUX78 2N4910 2N4898 2N4911 2N4899 2N4912 2n5430 411 00337 BDY57 BU912 TO-59 Package BOY90 BUR21 2N4900

    2N5430

    Abstract: 2N5427 2N5428 2N5429 transistor b 1560
    Text: MOS PEC MEDIUM-POWER NPN SILICON TRANSISITORS NPN 2N5427 Thru 2N5430 . designed for switching and wide-band amplifier applications FEATURES * DC Current Gain Specified to 7 Amperes. * Low Collector-Emitter Saturation Voltagev CE satf1-2V (M ax @ lc=7.0A


    OCR Scan     		PDF 2N5427 N5430 N5427 2N5428 2N5429 2N5430 Curre5427 2N5427 transistor b 1560

    23581 i c

    Abstract: ax 23581 ax 23581 i c
    Text: Microsemi NPN Transistors Part Number NPN 2N5051 2N5052 TIP31 TIP31A TIP31B TIP31C 2N5074 2N5075 2N5076 2N5077 2N6121 2N6122 2N6465 2N6466 2N6474 2N6374 2N6373 2N6372 2N6288 2N6290 2N6292 2N5427 2N5428 2N5429 2N5430 2N6078 2N6077 2N6079 2N5730 TIP110 TIP111


    OCR Scan     		PDF T0-220 O-220 23581 i c ax 23581 ax 23581 i c

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF