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Microchip Technology Inc 2N5428 NPN TRANSISTOR
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2N5428	Bulk			100	1 - 10 - 100 $27.08 1000 $27.08 10000 $27.08	Buy Now
Avnet Americas	2N5428	Bulk		36 Weeks	100	1 - 10 - 100 $26.0375 1000 $24.384 10000 $24.384	Buy Now
Mouser Electronics	2N5428					1 $29.16 10 $29.16 100 $27.08 1000 $27.08 10000 $27.08	Get Quote
Newark	2N5428	Bulk			100	1 - 10 - 100 $27.08 1000 $26.04 10000 $26.04	Buy Now
Microchip Technology Inc	2N5428			36 Weeks		1 $29.16 10 $29.16 100 $29.16 1000 $29.16 10000 $29.16	Buy Now

Onlinecomponents.com	2N5428					1 - 10 - 100 $25.86 1000 $25.86 10000 $25.86	Buy Now
NAC	2N5428	Tray			12	1 $29.76 10 $29.76 100 $27.41 1000 $25.4 10000 $25.4	Buy Now
Master Electronics	2N5428					1 - 10 - 100 $25.86 1000 $25.86 10000 $25.86	Buy Now
NTE Electronics Inc 2N5428 Transistor Npn Silicion Bvceo=80V Ic=7Amp To-66 Case Swtiching And Wide Ban Amplifier Applications Rohs Compliant: Yes \|Nte Electronics 2N5428
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	2N5428	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Signetics 2N5428
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	2N5428		2			1 - 10 - 100 - 1000 - 10000 -	Get Quote
STMicroelectronics 2N5428
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	2N5428		1			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	2N5428		1			1 $6 10 $6 100 $6 1000 $6 10000 $6	Buy Now

2N5428 Datasheets (38)

Part	Manufacturer	Description	Datasheet Type	PDF
2N5428	Central Semiconductor	Leaded Power Transistor General Purpose - Pol=NPN / Pkg=TO66 / Vceo=80 / Ic=7 / Hfe=60-240 / fT(Hz)=30M / Pwr(W)=40	Original	PDF
2N5428	Semelab	Bipolar NPN Device in a Hermetically Sealed TO66 Metal Package - Pol=NPN / Pkg=TO66 / Vceo=80 / Ic=7 / Hfe=60-240 / fT(Hz)=30M / Pwr(W)=40	Original	PDF
2N5428	API Electronics	TRANSISTOR,BJT,NPN,100V V(BR)CEO,5A I(C),TO-39	Scan	PDF
2N5428	API Electronics	Short form transistor data	Short Form	PDF
2N5428	API Electronics	Short form transistor data	Short Form	PDF
2N5428	Crimson Semiconductor	EPITAXIAL PLANAR / MULTIEPITAXIAL PLANAR Transistors	Scan	PDF
2N5428	Diode Transistor	TO-3 / Various Transistor Selection Guide	Scan	PDF
2N5428	Diode Transistor	Transistor Short Form Data - TO-3	Scan	PDF
2N5428	General Transistor	NPN Power Transistors	Scan	PDF
2N5428	Mospec	POWER TRANSISTORS(7A,40W) - Pol=NPN / Pkg=TO66 / Vceo=80 / Ic=7 / Hfe=60-240 / fT(Hz)=30M / Pwr(W)=40	Scan	PDF
2N5428	Mospec	Medium-Power NPN Silicon Transistor	Scan	PDF
2N5428	Motorola	The European Selection Data Book 1976	Scan	PDF
2N5428	Motorola	European Master Selection Guide 1986	Scan	PDF
2N5428	Motorola	Motorola Semiconductor Data & Cross Reference Book	Scan	PDF

2N5428	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2N5428	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
2N5428	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF
2N5428	Unknown	Vintage Transistor Datasheets	Scan	PDF
2N5428	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2N5428	Unknown	Basic Transistor and Cross Reference Specification	Scan	PDF

2N5428 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: CRIMSON SE MICO ND UC TO R INC TT D eTJI e SIMD^ b 0DQ0337 4 • . 2 5 1 4 0 9 6 C R I M S O N S E M I C O N D U C T O R INC 99 D 00 3 3 7 ! D ' ' f ' 3 3 - 0/ ! EPITAXIAL PLANAR - TO -66 NPN PNP BUR10 BUR11 BUR12 BUX77 2N4910 2N4911 2N4912 2 N5427 2N5428	OCR Scan	0DQ0337 BUR10 BUR11 BUR12 BUX77 2N4910 2N4911 2N4912 N5427 2N5428	PDF
2N3492 Abstract: 2N5388 2N5389 TO61 2N3487 2N3488 2N3489 2N3490 2N3491 2N3879 Contextual Info: Device Type 2N3879 2N3487 2N3488 2N3489 2N3490 2N3491 2N3492 2N5387 2N5388 2N5389 2N5427 2N5428 2N5429 2N5430 2N6077 2N6078 2N6079 VCEO V 75 60 80 100 60 80 100 200 250 300 80 80 100 100 275 250 350 hFE VCE @ IC (A) (sat) Max @ IC (A) Min/Max (V) 20/80 4.0	Original	2N3879 2N3487 2N3488 2N3489 2N3490 2N3491 2N3492 2N5387 2N5388 2N5389 2N3492 2N5388 2N5389 TO61 2N3487 2N3488 2N3489 2N3490 2N3491 2N3879	PDF
2N5428 Contextual Info: 2N5428 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a	Original	2N5428 O213AA) 1-Aug-02 2N5428	PDF
2N5430 Abstract: 2N5428 Contextual Info: SavantIC Semiconductor Product Specification 2N5428 2N5430 Silicon NPN Power Transistors DESCRIPTION •With TO-66 package ·Low collector saturation voltage : VCE sat =1.2V(Max)@IC=7A ·Excellent safe operating areas APPLICATIONS ·Designed for switching and wide-band	Original	2N5428 2N5430 2N5428 10MHz 2N5430	PDF
T100n Abstract: 2N5428 Contextual Info: 2N5428 80V NPN silicon medium-power transistor 12.50 Transistors Tra. 1 of 2 Home Part Number: 2N5428 Online Store 2N5428 Diodes 8 0 V NPN s ilic o n m edium - po w er t rans is t o r Transistors Enter code INTER3 at	Original	2N5428 com/2n5428 2N5428 T100n	PDF
2N5430 MOTOROLA Abstract: 2443 MOTOROLA transistor IC CD 3102 2N5430 2N5428 Contextual Info: MOTOROLA SC XSTRS/R 1HE F D § b3b?ES4 GDflMSMb 1 \| MOTOROLA 2N5428 TECHNICAL DATA 2N5430 SEMICONDUCTOR thru 7 AM PERE MEDIUM-POWER NPN SILICON TRANSISTORS POWER TRANSISTORS NPN SILICON . . . designed for switching and wide-band amplifier applications. • Low Collector-Emitter Saturation Voltage —	OCR Scan	2N5428 2N5430 O-213AA C01LECT0R-EMITTER 2N5430 MOTOROLA 2443 MOTOROLA transistor IC CD 3102 2N5430 2N5428	PDF
Contextual Info: EPITA XIA L PLANAR - TO-66 PNP BUR10 BUR11 BUR12 BUX77 2N4910 2N4911 21-14912 2N5427 2N5428 2N5429 2NI5430 BUX78 2N4898 2N4899 2N4900 lc Vco V V cio (V) (A) P« (W) 100 300 200 100 40 60 80 80 80 100 100 80 200 120 80 40 60 80 80 80 100 100 5 20 10 5 4 4	OCR Scan	BUR10 BUR11 BUR12 BUX77 2N4910 2N4911 2N5427 2N5428 2N5429 2NI5430	PDF
2N4071 Abstract: 2N6277 JANTXV 2N5626 Contextual Info: BIPOLAR < O P EA K PACKAGE TO-213 10- 66 T0-204 (TO-3) DEVICE TYPE 2N4864 2N5598 2N5600 2N5602 2N5604 2N5606 2N5608 2N5610 2N5612 2N5661T 2N566J’ 2N5664' 2H5665*’ 2N5427 2N5428 2N5429 2N5430 bvceo •c VOLTS 120 60 80 80 100 60 80 80 100 200 300	OCR Scan	2N4864 2N5598 2N5600 2N5602 2N5604 2N5606 2N5608 2N5610 2N5612 2N5661T 2N4071 2N6277 JANTXV 2N5626	PDF
2n5430 Abstract: 411 00337 BDY57 BU912 TO-59 Package BOY90 BUR21 2N4898 2N4899 2N4900 Contextual Info: CRIMSON SEMICONDUCTOR INC Ti DE \| E S m D T b 2514096 CRIMSON SEMICONDUCTOR INC 99D 00337 D ' " T “ 33-0/ EPITA XIA L PLANAR - TO-66 NPN PN P BUR10 * BUR11 * BUR12 BUX77 2N4910 2N4911 2N4912 2 N5427 2N5428 2N5429 2N5430 BUX78 2N4898 2N4899 2N4900 «CM V	OCR Scan	BUR10 BUR11 BUR12 BUX77 BUX78 2N4910 2N4898 2N4911 2N4899 2N4912 2n5430 411 00337 BDY57 BU912 TO-59 Package BOY90 BUR21 2N4900	PDF
Contextual Info: 2N5428A MECHANICAL DATA Dimensions in mm 6.35 0.250 8.64 (0.340) 3.68 (0.145) rad. max. 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 3.61 (0.142) 3.86 (0.145) rad. 14.48 (0.570) 14.99 (0.590) 24.33 (0.958) 24.43 (0.962) MEDIUM POWER NPN SILICON	Original	2N5428A 200mA)	PDF
2N5428 Contextual Info: 2N5428 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a	Original	2N5428 O213AA) 30-Jul-02 2N5428	PDF
2N5428A Contextual Info: 2N5428A MECHANICAL DATA Dimensions in mm 6.35 0.250 8.64 (0.340) 3.68 (0.145) rad. max. 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 3.61 (0.142) 3.86 (0.145) rad. 14.48 (0.570) 14.99 (0.590) 24.33 (0.958) 24.43 (0.962) MEDIUM POWER NPN SILICON	Original	2N5428A 200mA) 2N5428A	PDF
23581 i c Abstract: ax 23581 ax 23581 i c Contextual Info: Microsemi NPN Transistors Part Number NPN 2N5051 2N5052 TIP31 TIP31A TIP31B TIP31C 2N5074 2N5075 2N5076 2N5077 2N6121 2N6122 2N6465 2N6466 2N6474 2N6374 2N6373 2N6372 2N6288 2N6290 2N6292 2N5427 2N5428 2N5429 2N5430 2N6078 2N6077 2N6079 2N5730 TIP110 TIP111	OCR Scan	T0-220 O-220 23581 i c ax 23581 ax 23581 i c	PDF
JAN2N3996 Abstract: 2N4307 ISM22 2n3183 Contextual Info: A P 'e l e c t r o n COLLECTOR CURRENT = 5 AMPS NPN TYPES • VCEO sus V olts VEBO V olts hFE Min Max ■ Ft Vc e ic V c e (sat) Vb e (sat) @ Ic @ IB Mt 80 8 20 60 5 1 1 .2 5 2 1 .1 30 80 8 40 120 5 1 1. 25 2 1 .1 30 60 80 80 80 80 8 8 5 5 5 40 40 100 100	OCR Scan		PDF

triac zd 607 Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845 Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.	OCR Scan	SG73/D triac zd 607 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845	PDF
TDA0161 equivalent Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual Contextual Info: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:	OCR Scan		PDF
2N5336 Abstract: 2N5428 2N5429 82mils 2N5337 2N5338 2N5339 2N5427 2N5430 CJD44H11 Contextual Info: PROCESS CP219 Central Power Transistor TM Semiconductor Corp. NPN - High Current Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 82 x 82 MILS Die Thickness 11 MILS Base Bonding Pad Area 13.2 x 19.7 MILS Emitter Bonding Pad Area 13.2 x 21.2 MILS	Original	CP219 2N5336 2N5337 2N5338 2N5339 2N5427 2N5428 2N5429 2N5430 D44H11 2N5336 2N5428 2N5429 82mils 2N5337 2N5338 2N5339 2N5427 2N5430 CJD44H11	PDF
2N5385 Abstract: 2NXXXX 2N5349 2N5480 2N5672 2N5675 2N5348 2N5384 TO114 package 2N5388 Contextual Info: K lr » □ □ □ ° Q ru ru X 0» <0 Q. S E _ » < Polarity Ln u> CO K m =a o o 0 0 0 0 0 CO00 00 0 0 O O O O O CO CD 00 00 00 O O O O O 00 O O CD CD O O O O O 0 0 0 0 0 IO 10 to to 10 O O O O O in to 10 to to OOOOO to IO to Ö Ö O O O O O OOOOO OOOOO	OCR Scan	flS5402a 2N5348 O-111 2N5349 2N5384 2N5385 2NXXXX 2N5480 2N5672 2N5675 TO114 package 2N5388	PDF
TRIAC 97A6 Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1	OCR Scan	OD-80 OD-323 OT-23 OT-89 OT-143 OT-223 OT-323 TRIAC 97A6 S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C	PDF
1N5438 Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175 Contextual Info: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi	OCR Scan	27TfC 1N5438 tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175	PDF
la 4440 amplifier circuit diagram 300 watt Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492 Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode	OCR Scan	AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492	PDF
2N3583 Abstract: 2N4296 2N4297 2N4298 2N4299 2N5427 2N5428 2N5429 2N5430 Contextual Info: 1 1 0 J)L T R A N S I S T O R - CO • w - r w j ^ U I O D E ^ I H IN C A N S I A 4D S T O R C O D \| 5646352 0D D D 13E 2 I M G - . . 8 4 P 1 3 2 D T > 3 2 » 0 5 ~ D1QDE TR^f\l515TQR CGJfUC. 201) 686-0400 • Telex: 139-385 • Outside NY & NJ area call TOLL FREE 800-526-4561	OCR Scan	INC77 0GDG132 2N5427 2N5428 2N5429 30-12atts 2N5838 2N5839 2N5840 2N3902 2N3583 2N4296 2N4297 2N4298 2N4299 2N5427 2N5428 2N5429 2N5430	PDF
2SD568L Abstract: idb674 2N547 2SD569L nec npn rf 2SD8430 2SD568K Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO Of) PD Max hFE *T ON) Min (Hz) Max k)N Max (A) (s) ICBO r (CE)Mt Max (Ohms) Toper Max Package Style CO D vices 20 Watts or More, (Cont'd) 5 10 2SA1185 2SB827 2SD1063 2SB754	Original	2SA1185 2SB827 2SD1063 2SB754 2SD844 ET1551 2SB1224 2SD1626 2SA1442 2SC3692 2SD568L idb674 2N547 2SD569L nec npn rf 2SD8430 2SD568K	PDF
2N5478 Contextual Info: SEMELAB LTD • ai33ia? . .-' _ ISMLB 0000DE1 T~ 3 3 -¿ / ^ Reliability Polarity Option Package O ■type No. < o m '“«¿Sslssiia, *c cont hFE@ VCE/'C «T Pd \| r 2N5190 2N5191 2N5192 2N5193 2N5194 NPN NPN NPN PNP PNP 40 60 80 40 60 4 4 4 4 4 25-100 25-100	OCR Scan	ai33ia? 0000DE1 10/1m 10/50m 40min 2N5478	PDF

2N5428 Search Results

2N5428 Price and Stock

Microchip Technology Inc 2N5428

NTE Electronics Inc 2N5428

Signetics 2N5428

STMicroelectronics 2N5428

2N5428 Datasheets (38)

2N5428 Datasheets Context Search

2N3492

2N5428

2N5430

T100n

2N5430 MOTOROLA

2N4071

2n5430

2N5428

2N5428A

23581 i c

JAN2N3996

triac zd 607

TDA0161 equivalent

2N5336

2N5385

TRIAC 97A6

1N5438

la 4440 amplifier circuit diagram 300 watt

2N3583

2SD568L

2N5478