Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2N5612 Search Results

    SF Impression Pixel

    2N5612 Price and Stock

    Microchip Technology Inc 2N5612

    POWER BJT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2N5612 Bulk 100
    • 1 -
    • 10 -
    • 100 $37.2901
    • 1000 $37.2901
    • 10000 $37.2901
    		Buy Now
    Avnet Americas 2N5612 Bulk 36 Weeks 100
    • 1 $40.16
    • 10 $40.16
    • 100 $37.29
    • 1000 $35.87
    • 10000 $35.87
    		Buy Now
    Mouser Electronics 2N5612
    • 1 -
    • 10 -
    • 100 $40.16
    • 1000 $40.16
    • 10000 $40.16
    		Get Quote
    Newark 2N5612 Bulk 100
    • 1 -
    • 10 -
    • 100 $37.29
    • 1000 $35.87
    • 10000 $35.87
    		Buy Now
    Future Electronics 2N5612 100
    • 1 -
    • 10 -
    • 100 $39.85
    • 1000 $39.85
    • 10000 $39.85
    		Buy Now
    Microchip Technology Inc 2N5612 1
    • 1 $40.16
    • 10 $40.16
    • 100 $40.16
    • 1000 $40.16
    • 10000 $40.16
    		Buy Now
    Onlinecomponents.com 2N5612
    • 1 -
    • 10 -
    • 100 $35.61
    • 1000 $35.61
    • 10000 $35.61
    		Buy Now
    NAC 2N5612 8
    • 1 $40.99
    • 10 $40.99
    • 100 $37.75
    • 1000 $34.99
    • 10000 $34.99
    		Buy Now
    Master Electronics 2N5612
    • 1 -
    • 10 -
    • 100 $35.61
    • 1000 $35.61
    • 10000 $35.61
    		Buy Now

    2N5612 Datasheets (20)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N5612 Semelab Bipolar NPN Device in a Hermetically Sealed TO66 Metal Package - Pol=NPN / Pkg=TO66 / Vceo=100 / Ic=5 / Hfe=30-90 / fT(Hz)=60M / Pwr(W)=25 Original PDF
    2N5612 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
    2N5612 API Electronics Short form transistor data Short Form PDF
    2N5612 API Electronics TRANSISTOR,BJT,NPN,100V V(BR)CEO,5A I(C),TO-39 Scan PDF
    2N5612 General Semiconductor Low Frequency Transistors Scan PDF
    2N5612 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2N5612 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N5612 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N5612 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2N5612 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N5612 Unknown Transistor Replacements Scan PDF
    2N5612 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N5612 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N5612 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N5612 PPC Products Transistor Short Form Data Scan PDF
    2N5612 Semico NPN Silicon Power Transistor Selection Guide Scan PDF
    2N5612 Silicon Transistor Low Frequency Silicon Power Transistor Scan PDF
    2N5612 Solidev Semiconductors Solid State Products (Transistor Guide) Scan PDF
    2N5612 Solitron Devices Planar Power Transistor Scan PDF
    2N5612A Semelab Bipolar NPN Device in a Hermetically Sealed TO66 Metal Package - Pol=NPN / Pkg=TO66 / Vceo=100 / Ic=5 / Hfe=30-150 / fT(Hz)=60M / Pwr(W)=25 Original PDF

    2N5612 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N5612

    Abstract: No abstract text available
    Text: 2N5612 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a


    Original     		PDF 2N5612 O213AA) 1-Aug-02 2N5612

    2N5612A

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification 2N5612A Silicon NPN Power Transistors DESCRIPTION •With TO-66 package ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For general-purpose amplifier ; and switching applications


    Original     		PDF 2N5612A 2N5612A

    Untitled

    Abstract: No abstract text available
    Text: 2N5612A Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a


    Original     		PDF 2N5612A O213AA) 30-Jul-02

    2N5606

    Abstract: 2N5610 2N5608 2N5612 5612 5610 npn
    Text: Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5606 2N5608 2N5610 2N5612 DESCRIPTION ・With TO-66 package ・Excellent safe operating area ・Low collector-emitter saturation voltage APPLICATIONS ・For general-purpose amplifier ; and switching applications


    Original     		PDF 2N5606 2N5608 2N5610 2N5612 2N5606 2N5608/5610 2N5612 5612 5610 npn

    2N5606

    Abstract: 2N5608 2N5610 2N5612
    Text: Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5606 2N5608 2N5610 2N5612 DESCRIPTION ・With TO-66 package ・Excellent safe operating area ・Low collector saturation voltage APPLICATIONS ・For general-purpose amplifier ; and switching applications


    Original     		PDF 2N5606 2N5608 2N5610 2N5612 2N5606 2N5608/5610 2N5606/5610 2N5612

    2N5611

    Abstract: 2N5612 100v audio amplifier
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors 2N5611 DESCRIPTION •DC Current Gain: hFE= 30-90@IC= -2.5A ·Wide Area of Safe Operation ·Collector-Emitter Sustaining Voltage: VCEO SUS = -100V(Min) ·Complement to Type 2N5612


    Original     		PDF 2N5611 -100V 2N5612 -50mA -100V; -120V; 2N5611 2N5612 100v audio amplifier

    2N5612A

    Abstract: No abstract text available
    Text: Inchange Semiconductor Product Specification 2N5612A Silicon NPN Power Transistors DESCRIPTION ・With TO-66 package ・Excellent safe operating area ・Low collector saturation voltage APPLICATIONS ・For general-purpose amplifier ; and switching applications


    Original     		PDF 2N5612A 2N5612A

    2N3507 JANTX

    Abstract: 2N5541 2N6235 jedec Package TO-39 2n554 2n523
    Text: lc = 5.0AMPS CONTINUED DEVICE TYPE ««2N4150 2N4240 2N4395 2N4396 2N4897 2N4913 2N4914 2N4915 2N5152 2N5154 2N5237 2N5239 2N5336 2N5337 2N5338 2N5339 2N5487 2N5487 1 2N5488 2N5488 1 2N5541 2N5606 2N5608 2N5610 2N5612 2N5729 2N6233 2N6234 2N6235 *PD @ T C


    Original     		PDF 2N4150 2N4240 2N4395 2N4396 2N4897 2N4913 2N4914 2N4915 2N5152 2N5154 2N3507 JANTX 2N5541 2N6235 jedec Package TO-39 2n554 2n523

    2N5612A

    Abstract: No abstract text available
    Text: 2N5612A Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a


    Original     		PDF 2N5612A O213AA) 1-Aug-02 2N5612A

    2N5606

    Abstract: 2N5608 2N5610 2N5612 5610
    Text: SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N5606 2N5608 2N5610 2N5612 DESCRIPTION •With TO-66 package ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For general-purpose amplifier ; and switching applications


    Original     		PDF 2N5606 2N5608 2N5610 2N5612 2N5606 2N5608/5610 2N5612 5610

    Untitled

    Abstract: No abstract text available
    Text: 2N5612 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a


    Original     		PDF 2N5612 O213AA) 30-Jul-02

    b0539c

    Abstract: SML85509 B0953 2S0525
    Text: POWER SILICON NPN Item Number Part Number I C 5 10 20 SOTl644 SOT1644 B0953 B0953 BLX17 BLX17 BLX17 BLX20 ~gg:g: 25 30 SOT3408 SOT3428 SOT3428 SOT3428 2S0189A 2S0189A B0539C B0539C 5~~~~~ 35 40 UPT615 2N5612 2N5620 2SC2517M SOT1624 SOT1624 SOT1654 SOT1654


    Original     		PDF SMl1663 SML3404 SML3424 2N3430 2S045 CX702A 2S01022 2N1618 2N1620 b0539c SML85509 B0953 2S0525

    BD119

    Abstract: BC148A APT1002RBNR 1000 volt npn BD109 APT5025AN APT904R2BN BD107 APT1001R3AN APT1004RBNR
    Text: STI Type: AD818 Notes: Polarity: NPN Power Dissipation: .50 VCEO: 20 hFE min: 200 hFE max: 600 hFE A: .01 Matching hFE: 10 Matching VBE: 2.0 Tracking: 5.0 Case Style: TO-71 Industry Type: AD818 STI Type: AD818DIE Industry Type: AD818DIE V CEO: 25 ICBO ICEX: 20


    Original     		PDF AD818 AD818DIE AD820 AD821 AD820DIE O-204AA/TO-3 BD119 BC148A APT1002RBNR 1000 volt npn BD109 APT5025AN APT904R2BN BD107 APT1001R3AN APT1004RBNR

    Untitled

    Abstract: No abstract text available
    Text: ^zmL-Conductoi {Pioducti, fine. 20 STERN AVE SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 2N5611 DESCRIPTION • DC Current Gain: hFE= 30-90@lc= -2.5A • Wide Area of Safe Operation • Collector-Emitter Sustaining Voltage: VCEO(SUS)=-100V(Min)


    Original     		PDF 2N5611 -100V 2N5612 N5611 -50mA -100V; -120V

    Jantxv2N5666S

    Abstract: No abstract text available
    Text: Microsemi NPN Transistors Part Number 2N1485 2N1486 2N4910 2N4911 2N4912 2N5606 2N5610 2N6352 2N5612 2N6353 2N3018 2N4300 2N5662 JAN2N5662 JANTX2N5662 JANTXV2N5662 , 2N5663 JAN2N5663 JANTX2N5663 JANTXV2N5663 2N5666 2N5666S JAN2N5666 JAN2N5666S JANS2NS666 JANS2NS666S


    OCR Scan     		PDF T0-220 O-22Q NPN-11 Jantxv2N5666S

    LC51

    Abstract: No abstract text available
    Text: HI-REL SEUELAB SEMELABE BI-POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Type Number Rel Code 2N5602 2N5603 2N5604 2N5605 2N5606 2N5607 2N5608 2N5609 2N5610 2N5611 2N5612 2N5613 2N5614 2N5615 2N5616 2N5617 2N5618 2N5619 2N5620 2N5621 2N5622 2N5623 2N5629


    OCR Scan     		PDF A1331 2N5602 2N5603 2N5604 2N5605 2N5606 2N5607 2N5608 2N5609 2N5610 LC51

    JAN2N3996

    Abstract: 2N4307 ISM22 2n3183
    Text: A P 'e l e c t r o n COLLECTOR CURRENT = 5 AMPS NPN TYPES • VCEO sus V olts VEBO V olts hFE Min Max ■ Ft Vc e ic V c e (sat) Vb e (sat) @ Ic @ IB Mt 80 8 20 60 5 1 1 .2 5 2 1 .1 30 80 8 40 120 5 1 1. 25 2 1 .1 30 60 80 80 80 80 8 8 5 5 5 40 40 100 100


    OCR Scan     		PDF

    2N5385

    Abstract: 2NXXXX 2N5349 2N5480 2N5672 2N5675 2N5348 2N5384 TO114 package 2N5388
    Text: K lr » □ □ □ ° Q ru ru X 0» <0 Q. S E _ » < Polarity Ln u> CO K m =a o o 0 0 0 0 0 CO00 00 0 0 O O O O O CO CD 00 00 00 O O O O O 00 O O CD CD O O O O O 0 0 0 0 0 IO 10 to to 10 O O O O O in to 10 to to OOOOO to IO to Ö Ö O O O O O OOOOO OOOOO


    OCR Scan     		PDF flS5402a 2N5348 O-111 2N5349 2N5384 2N5385 2NXXXX 2N5480 2N5672 2N5675 TO114 package 2N5388

    Untitled

    Abstract: No abstract text available
    Text: r le = 5.0 AMPS CONTINUED DATA P D@ 100°C <§> BVeb0 VOLTS JZ DEVICE VcE VcE sat @ lc SHEET 5.0 0.75 4.5 4.5 0.5 0.075 0.8 0.8 15 15 4.0 4.0 1.0 1.0 1.0 2.5 2.5 2.5 0.25 0.25 0.25 4.0 4.0 4.0 5.0 5.0 5.0 10.0 1.5 1.5 0.6 0.9 5.0 5.0 5.0 5.0 0.5 0.5 0.5 0.5


    OCR Scan     		PDF 2N4150 2N4240 2N4395 2N4396 2N4913 2N4914 2N4915 2N5152 2N5154 2N5237

    1N5438

    Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
    Text: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­


    OCR Scan     		PDF 27TfC 1N5438 tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


    OCR Scan     		PDF AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492

    SILICON TRANSISTOR CORP

    Abstract: STP515 2N4114 2N4211 2n5609 transistor 2N5627 2N5678 2N5251 2n5609 stp6060
    Text: SILICON TRANSISTOR CORP 47E D • 8E54022 OOOOflll t. « S T C 2 AMP T*VS*07 5 AMP Ic CONTINUOUS NPN TYPICAL SPECIFICATIONS VCEO To 300V hFE 20-120 PACKAGE y ^ « 1A 5V r a TO-257 I PNP v c e o t o io o v VCEO To 300V VCEO To 100V h FE20-120(a1A 5 V hFE 20-120 2 .5 A 5 V


    OCR Scan     		PDF 8E54022 FE20-120 30MHz fTTo40M 50MHz 2N4863 2N5662 N5663 2N5333 SILICON TRANSISTOR CORP STP515 2N4114 2N4211 2n5609 transistor 2N5627 2N5678 2N5251 2n5609 stp6060

    germanium transistor

    Abstract: 2N5121 2N5418 2N5539 2N5637 V2205 MM8006
    Text: INTRODUCTION I I N . . . INDEX Numerical index of ElA-registered device types, w ith major electrical specifications 2N . . . & 3N . . . INDEX Numerical index of ElA-registered device types, with major electrical specifications DEVICE INDEX Complete alpha-numeric index of all device types


    OCR Scan     		PDF

    2N3920

    Abstract: TO61 2N5330 2N5542 2N2812 2N3919 2N5049 2N5083 2N5084 2N5313
    Text: 8134693 S E M ICOA 40 dF | G00D1E7 S NPN SILIC O N POW ER T R A N SIS T O R S C o n t’d M axim um R a tin gs D e vic e Typ e N o . NPN 2N5049 2N3919 2N3920 2N5083 2N5084 2N2.811 2N2812 2H5317 2N5313 2N5552 2N561C 2N5085 2N5329 2K5659 2R2813 2N2814 2N5658


    OCR Scan     		PDF 2N5049 2N3919 2N3920 2N5083 2N5084 2N2812 2H5317 2N5313 2K5552 2N6340 TO61 2N5330 2N5542