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    GERMANIUM Search Results

    GERMANIUM Datasheets (500)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N1011 Germanium Power Devices Germanium Power Transistors Scan PDF
    2N1021 Germanium Power Devices Germanium Power Transistors Scan PDF
    2N1021A Germanium Power Devices Germanium Power Transistors Scan PDF
    2N1022 Germanium Power Devices Germanium Power Transistors Scan PDF
    2N1022A Germanium Power Devices Germanium Power Transistors Scan PDF
    2N1031 Germanium Power Devices Germanium Power Transistors Scan PDF
    2N1031A Germanium Power Devices Germanium Power Transistors Scan PDF
    2N1031B Germanium Power Devices Germanium Power Transistors Scan PDF
    2N1031C Germanium Power Devices Germanium Power Transistors Scan PDF
    2N1032 Germanium Power Devices Germanium Power Transistors Scan PDF
    2N1032A Germanium Power Devices Germanium Power Transistors Scan PDF
    2N1032B Germanium Power Devices Germanium Power Transistors Scan PDF
    2N1032C Germanium Power Devices Germanium Power Transistors Scan PDF
    2N1038 Germanium Power Devices Germanium Power Transistors Scan PDF
    2N1039 Germanium Power Devices Germanium Power Transistors Scan PDF
    2N1040 Germanium Power Devices Germanium Power Transistors Scan PDF
    2N1041 Germanium Power Devices Germanium Power Transistors Scan PDF
    2N1042 Germanium Power Devices Germanium Power Transistors Scan PDF
    2N1043 Germanium Power Devices Germanium Power Transistors Scan PDF
    2N1044 Germanium Power Devices Germanium Power Transistors Scan PDF
    ...

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    MT3S111TU

    Abstract: No abstract text available
    Text: MT3S111TU TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111TU VHF-UHF Low-Noise, Low-Distortion Amplifier Application Unit: mm 2.1±0.1 3 R5 1 1 3 2 0.7±0.05 Marking +0.1 0.3 -0.05 High Gain: |S21e|2=12.5 dB typ. (@ f=1 GHz) 0.166±0.05


    Original     		PDF MT3S111TU MT3S111TU

    MT3S113

    Abstract: transistor 2F to-236 4360A
    Text: MT3S113 TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113 VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure:NF=1.15dB Typ. (@ f=1GHz) • High Gain:|S21e|2=11.8dB(Typ.) (@ f=1GHz) Marking


    Original     		PDF MT3S113 O-236 SC-59 MT3S113 transistor 2F to-236 4360A

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT PC8240T6N SiGe:C LOW NOISE AMPLIFIER FOR GPS DESCRIPTION The μPC8240T6N is a silicon germanium carbon SiGe:C monolithic integrated circuit designed as low noise amplifier for GPS. This device exhibits low noise figure and high power gain characteristics, so this IC can improve the


    Original     		PDF PC8240T6N PC8240T6N

    726-BGA622H6820

    Abstract: marking BXs SOT343 lna Germanium power
    Text: D a t a S h e e t , R e v . 2 . 2 , A p r i l 2 00 8 B G A 6 22 Silicon Germanium Wide Band Low Noise A m p l i f i e r w i t h 2 k V E S D P r o te c t i o n S m a l l S i g n a l D i s c r et e s Edition 2008-04-14 Published by Infineon Technologies AG,


    Original     		PDF 14GHz, BGA622 GPS05605 OT343 726-BGA622H6820 H6820 marking BXs SOT343 lna Germanium power

    Buffer Amplifier Ghz

    Abstract: THM2004J
    Text: PRELIMINARY THM2004J Wideband Linear Amplifier SiGe HBT MMIC Wideband Linear Amplifier Descriptions THM2004J is a high performance cascadeable 50-ohm amplifier. This RFIC uses the latest Silicon Germanium Hetero Junction Bipolar Transistor TAHB09 process of Tachyonics Co.,


    Original     		PDF THM2004J THM2004J 50-ohm TAHB09) 30GHz 1000MHz 100MHz Buffer Amplifier Ghz

    GSM 900, 1800, 1900 max power diagram

    Abstract: TST0911 TST0911-TSQ TST0911-TSS PSSOP28 pcs cellular power amplifier 1900 mhz gsm amplifier atmel 935
    Text: TST0911 Dualband SiGe Power Amplifier for GSM 900/1800/1900 Description The TST0911 is a monolithic dualband power amplifier IC. The device is manufactured using Atmel Wireless & Microcontrollers’ advanced Silicon-Germanium SiGe process and has been designed for use in GSM-based


    Original     		PDF TST0911 TST0911 900-MHz 1800/1900-MHz D-74025 20-Sep-00 GSM 900, 1800, 1900 max power diagram TST0911-TSQ TST0911-TSS PSSOP28 pcs cellular power amplifier 1900 mhz gsm amplifier atmel 935

    ATMEL 935

    Abstract: SMD 6 PIN IC VCC GND TST0912 TST0912-TJQ TST0912-TJS
    Text: TST0912 SiGe Power Amplifier for GSM 900 Description The TST0912 is a monolithic integrated power amplifier IC. The device is manufactured using Atmel Wireless & Microcontrollers’ Silicon-Germanium SiGe technology and has been designed for use in GSM 900-MHz mobile phones.


    Original     		PDF TST0912 TST0912 900-MHz D-74025 28-Sep-00 ATMEL 935 SMD 6 PIN IC VCC GND TST0912-TJQ TST0912-TJS

    SGC-4486Z

    Abstract: sgc- sot-86
    Text: SGC-4486Z SGC-4486Z 50MHz to 4000MHz Active Bias Silicon Germanium Cascadable Gain Block 50MHz to 4000MHz ACTIVE BIAS SILICON GERMANIUM CASCADABLE GAIN BLOCK RFMD Green, RoHS Compliant, Pb-Free Package: SOT-86 Product Description Features RFMD’s SGC-4486Z is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with a patented active bias network. The


    Original     		PDF SGC-4486Z 50MHz 4000MHz 4000MHz OT-86 SGC-4486Z sgc- sot-86

    4463Z

    Abstract: SGC-4463Z
    Text: SGC-4463Z SGC-4463Z 50MHz to 4000MHz ACTIVE BIAS SILICON GERMANIUM CASCADABLE GAIN BLOCK RFMD Green, RoHS Compliant, Pb-Free Package: SOT-363 Product Description Features RFMD’s SGC-4463Z is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with a patented active bias network. The


    Original     		PDF SGC-4463Z 50MHz 4000MHz OT-363 SGC-4463Z 1000pF EDS-104979 4463Z

    AZ100EP16VS

    Abstract: AZ100EP16VST AZ10EP16VS AZ10EP16VST MC100EP16VS NC 1350
    Text: ARIZONA MICROTEK, INC. AZ10EP16VS AZ100EP16VS ECL/PECL Differential Receiver with Variable Output Swing FEATURES • • • • • Silicon-Germanium for High Speed Operation 150ps Typical Propagation Delay AZ100EP16VS Functionally Equivalent to ON Semiconductor MC100EP16VS


    Original     		PDF AZ10EP16VS AZ100EP16VS 150ps AZ100EP16VS MC100EP16VS AZ10EP16VST AZ100EP16VST AZ10/100EP16VSL AZ10/100EP16VSL+ EP16VS AZ100EP16VST AZ10EP16VS AZ10EP16VST MC100EP16VS NC 1350

    C0603COG500-680JNE

    Abstract: SRF-1016 C0603COG500-101JNE SRF-2016
    Text: SRF-1016 Z 65MHz to 300MHz Silicon Germanium IF Receiver SRF-1016(Z) Preliminary 65MHz to 300MHz SILICON GERMANIUM IF RECEIVER RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: TSSOP, 16-Pin, 5.0mmx6.4mmx1.0mm Product Description Features RFMD’s SRF-1016 is a quadrature demodulator RFIC designed for UHF


    Original     		PDF SRF-1016 65MHz 300MHz 16-Pin, 16-pin TCR0603-16W-000T C0603COG500-680JNE C0603COG500-101JNE SRF-2016

    1900mhz

    Abstract: CL10B103KBNC LL1608-FS27NJ SGL-0263
    Text: SGL-0263 Z SGL-0263(Z) 1400MHz to 2500MHz Silicon Germanium Cascadable Low Noise Amplifier 1400MHz to 2500MHz SILICON GERMANIUM CASCADABLE LOW NOISE AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: SOT-363 Product Description Features


    Original     		PDF SGL-0263 1400MHz 2500MHz OT-363 1900MHz 50GHz. 1900mhz CL10B103KBNC LL1608-FS27NJ

    rohm mch

    Abstract: ECB-100607 SGA-6589 SGA-6586 Germanium Amplifier w061 PA DRIVER AMPLIFIER SGA6589 AN012 EAN-101613
    Text: DESIGN APPLICATION NOTE - AN012 SGA-6589 Wideband 50-1000 MHz Driver Circuit Abstract New Silicon / Germanium amplifier gain blocks exhibit a combination of wide bandwidth, high gain,IP3 and low noise figure. The SGA6589 is a medium power gain block for which a versatile,


    Original     		PDF AN012 SGA-6589 SGA6589 SGA-6589 EDS-101268) EAN-101613 rohm mch ECB-100607 SGA-6586 Germanium Amplifier w061 PA DRIVER AMPLIFIER AN012

    4363Z

    Abstract: SiGe HBT GAIN BLOCK MMIC AMPLIFIER SGC-4363Z
    Text: SGC-4363Z SGC-4363Z 50MHz to 4000MHz Active Bias Silicon Germanium Cascadable Gain Block 50MHz to 4000MHz ACTIVE BIAS SILICON GERMANIUM CASCADABLE GAIN BLOCK RFMD Green, RoHS Compliant, Pb-Free Package: SOT-363 Product Description Features RFMD’s SGC-4363Z is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with a patented active bias network. The


    Original     		PDF SGC-4363Z 50MHz 4000MHz 4000MHz OT-363 SGC-4363Z 4363Z SiGe HBT GAIN BLOCK MMIC AMPLIFIER

    SGL-0363Z

    Abstract: SGL0363Z IrL 1540 N l03z
    Text: SGL-0363Z SGL-0363Z 5MHz to 2000MHz Low Noise Amplifier Silicon Germanium 5MHz to 2000MHz LOW NOISE AMPLIFIER SILICON GERMANIUM RFMD Green, RoHS Compliant, Pb-Free Package: SOT-363 Product Description Features RFMD’s SGL-0363Z is a low power, low noise amplifier. It is designed for


    Original     		PDF SGL-0363Z 2000MHz OT-363 SGL-0363Z 200MHz 900MHz. NetwoSGL-0363Z SGL0363Z IrL 1540 N l03z

    SGC6489Z

    Abstract: SGC-6489
    Text: SGC-6489Z SGC-6489Z 50MHz to 3500MHz Silicon Germanium Active Bias Gain Block 50MHz to 3500MHz SILICON GERMANIUM ACTIVE BIAS GAIN BLOCK Package: SOT-89 Product Description Features RFMD’s SGC-6489Z is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias


    Original     		PDF SGC-6489Z 50MHz 3500MHz OT-89 SGC-6489Z SGC6489Z SGC-6489

    SGA-1263

    Abstract: SGA-1263Z BY 356
    Text: SGA-1263 Z SGA-1263(Z) DCto4000MH z Silicon Germanium HBT Cascadable Gain Block DCto4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK Package: SOT-363 Product Description Features RFMD’s SGA-1263(Z) is a Silicon Germanium HBT Heterostructure Bipolar Transistor (SiGe HBT) amplifier that offers excellent isolation and flat gain


    Original     		PDF SGA-1263 DCto4000MH DCto4000MHz OT-363 50GHz EDS-100935 SGA-1263 SGA-1263Z BY 356

    IF transformer

    Abstract: C0603COG500-101JNE ADT1-6T SRF-2016 SRF-1016 C0603COG500220JNE "IF transformer"
    Text: SRF-2016 Z SRF-2016(Z) 200MHz to 600MHz Silicon Germanium IF Receiver 200MHz to 600MHz SILICON GERMANIUM IF RECEIVER RoHS Compliant and Pb-Free Product (Z Part Number) Package: TSSOP, 16-Pin, 5.0mmx6.4mmx1.0mm Product Description Features RFMD’s SRF-2016 is a quadrature demodulator RFIC designed for UHF


    Original     		PDF SRF-2016 200MHz 600MHz 16-Pin, 16-pin Mat03 IF transformer C0603COG500-101JNE ADT1-6T SRF-1016 C0603COG500220JNE "IF transformer"

    2N3147

    Abstract: 2N3146 Texas Germanium Germanium power
    Text: TYPES 2N3146, 2N3147 P-N-P ALLOY-JUNCTION GERMANIUM POWER TRANSISTORS S 5 £m HIGH-VOLTAGE HIGH-POWER TRANSISTORS for w V» z M Z z P ft z “ MILITARY AND INDUSTRIAL APPLICATIONS m ech a n ica l d a ta S » I- These tran sistors a re in precisio n w e ld e d , h e rm e tic a lly s e a le d en closures. The m ounting b a s e p ro v id e s an


    OCR Scan     		PDF 2N3146, 2N3147 2N3146 Texas Germanium Germanium power

    2N404

    Abstract: MPS404 2n404a a5t404
    Text: TYPES A5T404, A5T404A, A8T404, A8T404A P-N-P SILICON TRANSISTORS _B U L L E T I N N O . O L -S 7 3 1 1 9 7 9 , M A R C H 1973 SILECTt TRANSISTORS* FOR LOW-COST REPLACEMENT OF GERMANIUM 2N404, 2N404A • A5T404, A5T404A Have Standard TO-18 100-mil Pin-Circle Configuration


    OCR Scan     		PDF A5T404, A5T404A, A8T404, A8T404A 2N404, 2N404A A5T404A 100-mil 2N404 MPS404 2n404a a5t404

    Untitled

    Abstract: No abstract text available
    Text: Temic TST0911 S e m i c o n d u c t o r s Dualband SiGe-Power Amplifier for GSM 900/1800/1900 Description The TST0911 is a monolithic dualband power amplifier IC. The device is manufactured using TEMIC Semiconductors’ advanced Silicon-Germanium SiGe process and has been designed for use in GSM-based


    OCR Scan     		PDF TST0911 TST0911 900-MHz 1800/1900-MHz D-74025 14-Apr-99

    Untitled

    Abstract: No abstract text available
    Text: Temic TST0922 S e m i c o n d u c t o r s SiGe-Power Amplifier for GSM 900 Flipchip Version Description The TST0922 is a monolithic integrated power amplifier IC in flipchip technology. The device is manufactured using TEMIC Semiconductors’ Silicon-Germanium


    OCR Scan     		PDF TST0922 TST0922 D-74025 25-Mar-99

    applications of ujt with circuits

    Abstract: UJT 2N491 applications of ujt UJT specification ujt firing circuits of scr ujt transistor 2N489 UJT 2N492 Germanium Power Devices TRANSISTOR 2N492
    Text: Germanium Power Devices Corp SILICON UNIJUNCTION TRANSISTOR Specifications S IÚCON TYPES I Silicon Unijunction T ra n ­ sistors are three-term inal devices having a stable “ N ” type negative resistance characteristic over a wide tem perature range. A stable peak point


    OCR Scan     		PDF 3T47375 506-475-5982---fax applications of ujt with circuits UJT 2N491 applications of ujt UJT specification ujt firing circuits of scr ujt transistor 2N489 UJT 2N492 Germanium Power Devices TRANSISTOR 2N492

    1N48 diode

    Abstract: diode in34a IN34A DIODE 1N54 1N34 DIODE diode 1n34 1N34 1N48 1N38A 1Ns4
    Text: CRIMSON S EMICONDUCTOR INC ' TT 2514096 CRIMSON SEMICONDUCTOR 99 D 0 0 3 4 9 D » e | 2514EHL. □ 0 0 0 34 e] □ INC 7"' O / - o 7 t GERMANIUM DIODE TYPE PEAK REVERSE V O LTAG E AVERAGE F.ORW ARD CURRENT M IN IM U M FO R W A R D CURRENT A T 1 VO LT M A X IM U M


    OCR Scan     		PDF 00034e] 1N34A at-10V at-25 1N38A 1N38B -100V at-50V at-50 1N52A 1N48 diode diode in34a IN34A DIODE 1N54 1N34 DIODE diode 1n34 1N34 1N48 1Ns4