2N5629 Search Results

2N5629 Price and Stock

Filter by Manufacturer


Microchip Technology Inc 2N5629 POWER BJT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2N5629	Bulk			100	1 - 10 - 100 $64.2504 1000 $64.2504 10000 $64.2504	Buy Now
Avnet Americas	2N5629	Bulk		36 Weeks	100	1 $69.19 10 $69.19 100 $64.25 1000 $61.78 10000 $61.78	Buy Now
Mouser Electronics	2N5629					1 - 10 - 100 $69.19 1000 $69.19 10000 $69.19	Get Quote
Newark	2N5629	Bulk			100	1 - 10 - 100 $64.25 1000 $61.78 10000 $61.78	Buy Now
Future Electronics	2N5629				100	1 - 10 - 100 $68.64 1000 $68.64 10000 $68.64	Buy Now

Microchip Technology Inc	2N5629				1	1 $69.19 10 $69.19 100 $69.19 1000 $69.19 10000 $69.19	Buy Now
Onlinecomponents.com	2N5629					1 - 10 - 100 $61.35 1000 $61.35 10000 $61.35	Buy Now
NAC	2N5629				5	1 $70.6 10 $70.6 100 $65.03 1000 $60.27 10000 $60.27	Buy Now
Master Electronics	2N5629					1 - 10 - 100 $61.35 1000 $61.35 10000 $61.35	Buy Now
STMicroelectronics 2N5629
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	2N5629		1			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	2N5629		1			1 $10.5 10 $10.5 100 $10.5 1000 $10.5 10000 $10.5	Buy Now
Motorola Semiconductor Products 2N5629 TRANSISTOR,BJT,NPN,100V V(BR)CEO,16A I(C),TO-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	2N5629		2			1 $7.95 10 $5.3 100 $5.3 1000 $5.3 10000 $5.3	Buy Now
New England Semiconductor 2N5629 TRANSISTOR,BJT,NPN,100V V(BR)CEO,16A I(C),TO-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	2N5629		1			1 $13.0848 10 $10.904 100 $10.904 1000 $10.904 10000 $10.904	Buy Now

2N5629 Datasheets (30)

Part	Manufacturer	Description	Datasheet Type	PDF
2N5629	Central Semiconductor	COMPLEMENTARY SILICON POWER TRANSISTOR	Original	PDF
2N5629	Semelab	Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=100 / Ic=16 / Hfe=25/100 / fT(Hz)=1M / Pwr(W)=200	Original	PDF
2N5629	Advanced Semiconductor	Silicon Transistor Selection Guide	Scan	PDF
2N5629	API Electronics	Short form transistor data	Short Form	PDF
2N5629	Diode Transistor	Silicon Transistors	Scan	PDF
2N5629	Diode Transistor	Silicon Transistors	Scan	PDF
2N5629	Fairchild Semiconductor	Full Line Condensed Catalogue 1977	Scan	PDF
2N5629	General Electric	Silicon N-P-N epitaxial-base high-power transistor. 100V, 200W. - Pol=NPN / Pkg=TO3 / Vceo=100 / Ic=16 / Hfe=25/100 / fT(Hz)=1M / Pwr(W)=200	Scan	PDF
2N5629	Motorola	The European Selection Data Book 1976	Scan	PDF
2N5629	Motorola	European Master Selection Guide 1986	Scan	PDF
2N5629	Motorola	Motorola Semiconductor Data & Cross Reference Book	Scan	PDF
2N5629	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
2N5629	Unknown	Silicon NPN Transistor	Scan	PDF
2N5629	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF

2N5629	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
2N5629	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF
2N5629	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
2N5629	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2N5629	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
2N5629	Unknown	Transistor Replacements	Scan	PDF

2N5629 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2N6030 Abstract: 2N6029 2N5629 2N5630 Text: Inchange Semiconductor Product Specification 2N6029 2N6030 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2N5629 2N5630 ・High power dissipations APPLICATIONS ・For high voltage and high power amplifier applications	Original	PDF	2N6029 2N6030 2N5629 2N5630 2N6029 2N6030 2N5630
2N5629 Abstract: 2N5630 2N6029 2N6030 Text: Inchange Semiconductor Product Specification 2N5629 2N5630 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2N6029 2N6030 APPLICATIONS ・For high voltage and high power amplifier applications PINNING PIN DESCRIPTION 1 Base	Original	PDF	2N5629 2N5630 2N6029 2N6030 2N5629 2N5630 2N6030
Untitled Abstract: No abstract text available Text: , Dnc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N5629 2N5630 NPN 2N60Z9 2N6030 PNP COMPLEMENTARY SILICON POWER TRANSISTORS JEDEC TO-3 CASE MAXIMUM RATINGS (TC=25°C unless otherwise noted)	Original	PDF	2N5629 2N5630 2N60Z9 2N6030 2N5630 2N6030 2N5629 2N6Q29
Untitled Abstract: No abstract text available Text: 2N5629 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)	Original	PDF	2N5629 O204AA) 18-Jun-02
2N5629 Abstract: 2N5630 2N6029 2N6030 Text: Product Specification www.jmnic.com 2N5629 2N5630 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2N6029 2N6030 APPLICATIONS ・For high voltage and high power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Emitter	Original	PDF	2N5629 2N5630 2N6029 2N6030 2N5629 2N5630 2N6030
2N5630 Abstract: 2N5629 2N6029 2N6030 Text: SavantIC Semiconductor Product Specification 2N5629 2N5630 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Complement to type 2N6029 2N6030 APPLICATIONS ·For high voltage and high power amplifier applications PINNING PIN DESCRIPTION 1 Base	Original	PDF	2N5629 2N5630 2N6029 2N6030 2N5629 2N5630 2N6030
2n6029 Abstract: 2N5630 Text: 2N5629 2N5630 2N6029 2N6030 NPN PNP COMPLEMENTARY SILICON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5629, 2N6029 series devices are complementary silicon power transistors, manufactured by the epitaxial base	Original	PDF	2N5629 2N5630 2N6029 2N6030 2N5629, 2N6029 2N6029) 2N5630, 2N6030) 500kHz 2N5630
2N5629 Abstract: No abstract text available Text: 2N5629 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)	Original	PDF	2N5629 O204AA) 31-Jul-02 2N5629
30G140 Abstract: 2SC2922 SANKEN LS2025 2SC3241 2N5629 MOTOROLA MRF454 motorola MRF435 40363 MJ15026 2SC2608 Text: POWER SILICON NPN Item Number Part Number I C 5 10 >= 20 2N6359 B0315 MJE4340 MJE4340 B0317 PTC173 2N5629 2N6302 ~j~:~:~ 25 30 MJ6302 2N5630 BOY77 BOY77 BOY37 2N3773 BOY37A BOY37A ~j~:~:~ 35 40 MJ3773 MJ3773 MJ3773 2N5631 2S0873 BOX50 BOX50 TRW6259 ~~~~~~3	Original	PDF	OT-121var BUV26 STIPL757 TIPL757 STIPL757A 2SC2782 2SC2694 MRF247 30G140 2SC2922 SANKEN LS2025 2SC3241 2N5629 MOTOROLA MRF454 motorola MRF435 40363 MJ15026 2SC2608
2N6030 Abstract: 2N6029 2N5629 2N5630 Text: SavantIC Semiconductor Product Specification 2N6029 2N6030 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·Complement to type 2N5629 2N5630 ·High power dissipations APPLICATIONS ·For high voltage and high power amplifier applications PINNING	Original	PDF	2N6029 2N6030 2N5629 2N5630 2N6029 2N6030 2N5630
2N6029 Abstract: 2N6030 2N5629 2N5630 Text: Product Specification www.jmnic.com 2N6029 2N6030 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2N5629 2N5630 APPLICATIONS ・For high voltage and high power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Emitter	Original	PDF	2N6029 2N6030 2N5629 2N5630 2N6029 2N6030 2N5630
Untitled Abstract: No abstract text available Text: 2N5629 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)	Original	PDF	2N5629 O204AA) 16-Jul-02
to63 Abstract: No abstract text available Text: B440355 SPACE SPACE POWER POWER ELECTRONICS 89C OQ1I2 Hi-Re! PLANAR P O W E R - 2 0 AMP Wk fll ELECTRONICS »E\|S4H03SS D00D11E • \| ~ FOR Breakdown Voltages TYPE ' 2N1936 2N1937 2N2815 2N2816 2N2817 2N2818 2N2819 2N2820 2N2821 2N2822 2N2823 2N2824 2N2825	Original	PDF	B440355 S4H03SS D00D11E 2N3265 2N3266 2N3597 2N3598 2N3599 2N3846 2N3847 to63
BUV48I Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046 Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable	Original	PDF	2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046

Untitled Abstract: No abstract text available Text: 7 = 1 2 ^ 3 7 O D E U M S b • T ‘* 3 V l 5 2 N5629 « ! _ 2 N 6 0 2 9 SGS-THOMSON ê fô m iC T S G S-THOMSON 30E » COMPLEMENTARY HIGH POWER TRANSISTORS DESCRIPTIO N The 2N5629 NPN and 2N6029 (PNP) are comple mentary silicon epitaxial-base transistors in Jedec	OCR Scan	PDF	N5629 2N5629 2N6029 29-2N6029 2N5629-2N6029
2n5631 Abstract: 2N5629 2NS631 Text: File N um ber 2N5629, 2N5630, 2N5631 1141 TERMINAL DESIGNATIONS Silicon N-P-N Epitaxial-Base High-Power Transistors Rugged, Broadly Applicable Devices For Industrial and Commercial Use Feature*: • H ig h d is s ip a tio n c a p a b ility ■ L o w s a tu ra tio n voltages	OCR Scan	PDF	2N5629, 2N5630, 2N5631 92CS-27516 O-204AA 2NS630 2NS631 2n5631 2N5629
2N5130 Abstract: 2N5629 2N5630 2N5631 Text: Qï 3875081 G E SOLID STATE D T W B â T S Ï Ï â ï T G Ï Ï V ? 3^ 3 ” 01E 17393 I D General-Purpose Power Transistors File N u m b e r 1141 2N5629, 2N5630, 2N5631 TERM INAL DESIGNATIONS	OCR Scan	PDF	2N5629, 2N5630, 2N5631 cs-i79i6 O-204AA RCA-2N5629, 2N5630 2N5631 3fl750fll DD173TS 2N5130 2N5629
TO63 Abstract: 2N3237 2N3598 2N3599 2N3772 2N3773 2N5631 2N6259 2N6359 Text: DIODE TRANSISTOR CO INC fl4 DE 1 5640352 00G013Ö 3 ÿ*. J 3 - û DIODE TB<ar\J5J5TQR CO. INC. (201 686-0400 »Telex: 139-385 • Outside NY & N J area call TO LL F R E E 800-526-4581 FAX No. 201-575-5863 Device Type hFE VCEO Max(V) Mln/Max 2N3773 2N5629	OCR Scan	PDF	f\15i5TDR 2N3773 N5629 N5630 2N5631 2N6259 2N6359 2N3237 N3597 2N3598 TO63 2N3599 2N3772
2N5629 MOTOROLA Abstract: 2N5629 2n6029 2N6030 2N6031 Text: M O T O R O LA SC XSTRS/R F 1SE D \| b3b?aSM MOTOROLA SEMICONDUCTOR TECHNICAL DATA GGÔMSSG □ \| r - 33-/0 NPN PNP 2N5629 2N5630 2N5631 2N6029 2N6030 2N6031 HIGH-VOLTAGE - HIGH POWER TRANSISTORS 16 AMPERE . . . designed fo r use in high pow er audio am p lifie r applications and	OCR Scan	PDF	2N5629 2N5630 2N5631 2N6029 2N6030 2N6031 2N6029, 2N6030, b3t72SM 2N5629 MOTOROLA 2N6031
92CS-30I4 Abstract: 2N5629 2N5630 92CS-3 42CQ RCA-2N5629 2n5631 rca Text: Qï 3875081 G E SOLID STATE B T fB F T S D â ir Ô Q V m r i- ” 01E 17393 D General-Purpose Power Transistors File N um ber 1141 2N5629, 2N5630, 2N5631 TERMINAL DESIGNATIONS Silicon N-P-N	OCR Scan	PDF	2N5629, 2N5630, 2N5631 O-204AA RCA-2N5629, 2N5630 2N5631 92CS-30I48 92CS-30I5I 92CS-30I4 2N5629 92CS-3 42CQ RCA-2N5629 2n5631 rca
2N4211 Abstract: TO63 2N3237 2N3598 2N3599 2N3772 2N3773 2N5631 2N6259 2N6359 Text: DIODE TRANSISTOR CO INC fl4 DE 1 5640352 00G013Ö 3 ÿ*. J 3 - û DIODE TB<ar\J5J5TQR CO. INC. (201 686-0400 »Telex: 139-385 • Outside NY & N J area call TO LL F R E E 800-526-4581 FAX No. 201-575-5863 Device Type hFE VCEO Max(V) Mln/Max 2N3773 2N5629	OCR Scan	PDF	f\15i5TDR 2N3773 N5629 N5630 2N5631 2N6259 2N6359 2N3237 N3597 2N3598 2N4211 TO63 2N3599 2N3772
J377 Abstract: 2N4211 to63 J3772 2N3237 2N3598 2N3599 2N3773 2N5631 2N6259 Text: DIODE TRANSISTOR CO INC fl4 DE \| 2fl4ñ35S 0000130 3 TJ~ö D1QEE TR<aHI5J5TQR CD., INC. (201 686-0400 »Telex: 139-385 • Outside NY & NJ area call T O LL F R E E 800-526-4581 FAX No. 201-575-5863 Device Type hFE V CEO Max(V) Mln/Max 2N3773 2N5629 2N5630	OCR Scan	PDF	Q00013A DlQDETft4l\l515TDRCQ 2N3773 N5629 N5630 2N5631 2N6259 2N6359 2N3237 N3597 J377 2N4211 to63 J3772 2N3598 2N3599
LC51 Abstract: No abstract text available Text: HI-REL SEUELAB SEMELABE BI-POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Type Number Rel Code 2N5602 2N5603 2N5604 2N5605 2N5606 2N5607 2N5608 2N5609 2N5610 2N5611 2N5612 2N5613 2N5614 2N5615 2N5616 2N5617 2N5618 2N5619 2N5620 2N5621 2N5622 2N5623 2N5629	OCR Scan	PDF	A1331 2N5602 2N5603 2N5604 2N5605 2N5606 2N5607 2N5608 2N5609 2N5610 LC51
Untitled Abstract: No abstract text available Text: 0043592 A P I ELECTRONICS INC A P I 26C 00234 ELECTRONICS INC 2b D » F \| d D4 3 S c12 D 00 0 2 3 4 b COLLECTOR CURRENT = 15 AMPS NPN TYPES - CONTINUED Device No C ase 2N6496 2N6579 2N6580 2N6581 2N6582 2N6583 2N6584 2N6585 TO-3 T O -3 TO-3 TO-3 TO-3 TO-3	OCR Scan	PDF	2N6496 2N6579 2N6580 2N6581 2N6582 2N6583 2N6584 2N6585 O61/1

Privacy Settings

2N5629 Search Results

2N5629 Price and Stock

Microchip Technology Inc 2N5629

STMicroelectronics 2N5629

Motorola Semiconductor Products 2N5629

New England Semiconductor 2N5629

2N5629 Datasheets (30)

2N5629 Datasheets Context Search

2N6030

2N5629

Untitled

Untitled

2N5629

2N5630

2n6029

2N5629

30G140

2N6030

2N6029

Untitled

to63

BUV48I

Untitled

2n5631

2N5130

TO63

2N5629 MOTOROLA

92CS-30I4

2N4211

J377

LC51

Untitled