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    TO63 Price and Stock

    Schneider Electric HMIGTO6310

    12.1 COLOR TOUCH PANEL SVGA-TFT
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    DigiKey HMIGTO6310 Bulk 10 1
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    Mouser Electronics HMIGTO6310 2
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    Schneider Electric HMIGTO6315

    ADVANCED TOUCHSCREEN PANEL, HARM
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    Schneider Electric HMIGTO6310FC

    HMIGTO6310 CONFORMAL COATED
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    LEM Holdings SSA ATO-63-B333-D10-SP100

    CURR SENSE XFMR 63A CHAS MNT
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    Super Micro Computer Inc AS -4125GS-TNRT-OTO-63

    OPTIMIZED H13DSG-O-CPU, CSE-418G2TS,AOM- - Bulk (Alt: AS -4125GS-TNRT-OTO-63)
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    Find more TO63 price and stock on Findchips.com

    TO63 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TO6378 Micro Electronics DC TO DC CONVERTER TRANSFORMER FOR DIGITAL STILL CAMERA Scan PDF

    TO63 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    to63

    Abstract: NTE70 180v 250w
    Text: NTE70 Silicon NPN Transistor High Voltage Power Amp, Switch Description: The NTE70 is a silicon NPN transistor in a TO63 type case utilizing C2R processing which describes a manufacturing technology that provides surface stabilization for high voltage operation and enhances long term reliability.


    Original     		NTE70 NTE70 to63 180v 250w PDF

    TO63 package

    Abstract: NTE71
    Text: NTE71 Silicon NPN Transistor High Current Amp, Fast Switch Description: The NTE71 is silicon NPN transistor in a TO63 stud mount package utilizing C2R processing that provides surface stabilization for high voltage operation and enhances long term reliability.


    Original     		NTE71 NTE71 TO63 package PDF

    2u 62 diode

    Abstract: 2SC1115 bd313 KT808BM sdt7603 2u 87 diode 2u 45 diode diode 2U 66 bdy19
    Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max V 8R CEO (A) Of) hFE fT 'CBO Max Max toN Max ON) Min (Hz) (A) (s) PD r (CE)ut Max (Ohms) Toper Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . . . .15


    Original     		BD610 BDS11 BDS14 2SD213 2N5006 2N5007 2N5623 2N5624 2SA746 2SA877 2u 62 diode 2SC1115 bd313 KT808BM sdt7603 2u 87 diode 2u 45 diode diode 2U 66 bdy19 PDF

    LT082

    Abstract: LT081 LT089 LT081S SML55405 transistors 1U BUR20 TC15U800
    Text: POWER SILICON TRANSISTORS Item Number •c Part Number Manufacturer Type Max hFE fT ICBO Max t0N Max on ON Min Hz) (A) (s) 300 325 350 400 400 400 400 425 425 450 700 625 230 300 625 885 1 7k 350 530 350 V(BR)CEO Max (A) PD r <CE)Mt Max (Ohms) Toper Max


    Original     		SDT55960 SML55462 PTC6683 2SD642 SML55464 D60T4040 D62T4040 SDT5825 SDT5855 SDT5826 LT082 LT081 LT089 LT081S SML55405 transistors 1U BUR20 TC15U800 PDF

    BD607

    Abstract: BDY17 sd1536-1 mj2940 motorola RCA1C07 bd608
    Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V(BR)CEO on fT tON r hFE ICBO (CE)set Toper Max Max Max ON) Min (Hz) (A) (s) Max (Ohms) Max (°C) 275m 275m 275m 140 140 140 140 140 140 PD Package Style D vices 20 Watts or More, (Cont'd)


    Original     		BD607 BD608 BDS10 BDS13 2SD369 2SD3690 2N5621 2N5622 2SD369Y BDY17 sd1536-1 mj2940 motorola RCA1C07 PDF

    2N2090

    Abstract: 2N2095A 2N2022 2N2040 Emihus 2N2020 2n2063 2n2038 2N2082 2N2003
    Text: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 >= 30 Solitron PPC Product PPC Product Solitron Solitron PPC Product Sid St Dvcs Sid St Dvcs Sid St Dvcs Sid St Dvcs g~:~:g~ ~:~~: ~~: KSP1151 KSP1171 SOT7A07 SOT7A07 SOT7A07 SOT7607 SOT7607 SOn607


    Original     		OT85306 OT85506 OT85606 KSP1151 KSP1171 OT7A07 2N2090 2N2095A 2N2022 2N2040 Emihus 2N2020 2n2063 2n2038 2N2082 2N2003 PDF

    Untitled

    Abstract: No abstract text available
    Text: Maximum Breakdown Voltage Diag. No. Collector to Base Volts Collector to Emitter (Volts) Emitter to Base (Volts) •c BVCBO BV ceo BVeb0 hFE Pd fT TO63 15 20 150 90 7 20 Min 200 20 High Current Amp, Fast Switch TO61 Isol 16 10 120 100 6 30 Min 115 30 NPN-Si


    OCR Scan     		NTE92) 93MCP NTE92 NTE93 PDF

    2N5415

    Abstract: No abstract text available
    Text: p^ [D [yj©Tf -Ætttron ©ä t ä [l Devices. Inc. J A N , J A N T X , J A N T X V P O W E R T R A N S IS T O R S (P L A N A R ] DEVICE TYPE MIL-S19500/ VCEO VOLTS IC (CONT.) AMPS POWER (@TC = 25“C) WATTS CASE TYPE CHIP TYPE 2N2880 2N3418 2N3419 2N3420


    OCR Scan     		O-111 O-5/39 O-114 2N5415 PDF

    2N1015

    Abstract: 2N1015A 2N1015B 2N1015C 2N1015D 2N1015E 2N1015F 2N1016 2N1016A 2N1016B
    Text: POWER TRANSISTORS *•* PT TYPE NO. TO-82 m MAXIMUM RATINGS 25*C BVcbo BVctt» BVebo le V V V A Watts hft MIN MÀX le A * Va V _ Sat Test Voltages Conditions le fa I ebo Va V« V A ma V A 2N1015 150 30 30 25 7.5 10 2 4 1.5 2 2 .3 20 2N1015A 150 60 60 25 7.5


    OCR Scan     		2N1015 2N1015A 2N1015B 2N1015C 2N1015D 2N1015E 2N1015F 2N1016 2N1016A 2N1016B PDF

    2N424

    Abstract: 2N1722 2N389 to-53 2N389A 2N5067 2N5068 2N5630 2N5631 2N5632
    Text: POWER TRANSISTORS PT TYPE NO. MAXIMUM RATINGS @ 25°C BVcbo BVcto BVebo Ic Watts V V V A hre @ MIN MAX Ic A Va V Sat Voltages V a V« V V Test Conditions Ib Ic I ebo A A ma 2N5067 88 40 40 5 5 20 80 1 2 .4 1.2 1.0 .1 1 2N5068 88 60 60 5 5 20 80 1 2 .4 1.2


    OCR Scan     		2N5067 2N5068 N5069 N5629 2N5630 2N5631 2N5632 2N5633 2N5634 TWX-510-224-6582 2N424 2N1722 2N389 to-53 2N389A PDF

    2N6322

    Abstract: 2N6324 RBB21
    Text: AUL I J j MAIL DLVKL^ LUC 12E D Jñ3btiDll D D G E D T S a 2N6322 AND 2N6324 G ru n K v ll 30 AMP NPN HIGH VOLTAGE/HIGH ENERGY 200 VOLTS 99P II 1 4 8 3 0 V a lle y V ie w A v e n u e L a M ira d a . C a lifo rn ia 9 0 6 3 8 2 1 3 9 2 1 -9 6 6 0 T '- 3 3 ~ J C '


    OCR Scan     		2N6322 2N6324 Box577. 2N6324 RBB21 PDF

    2N558B

    Abstract: 2N3S49 2N1936 2N1937 2N3265 2N3266 2N3846 2N3847 2N3848 2N4002
    Text: General Transistor Corporation CASE TO-63 le max = 20 to 60A V c e o (su s) NPN Power Transistors Typ*No. VCEO (•!*) <v) IC (mu) (A) hFE&C/VCE (min-mi* Q AY) VCE(SAT) QIC/IB (V0A/A) VBE ic/vce (V©A/V) VBE (SAT) ©OB (V0A/V) 2N1936 2N1937 2N3265


    OCR Scan     		0-300V 2N1936 2N1937 2N3265 2N3266 2N5250 2N5251 2N5489 2N5587 2N558B 2N558B 2N3S49 2N1936 2N1937 2N3265 2N3266 2N3846 2N3847 2N3848 2N4002 PDF

    TO63 package

    Abstract: 2N5250 2N3265 transistor 114 2N5539 2N3150 2N3266 2N3847 2N4002 2N4003
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-63 PACKAGE DEVICE TYPE V ceo sus VOLTS Ic (max) AMPS 1*FE@ Ic/ V ce (min/max @ A/V) VcE(sat) @ I c/I b (V @ A/A) p“ d * WATTS Ìt (MHz) NPN TO-63 2N3265 90 20 25-55@15/2 l@20/2 100 20 2N3266 60 20 20-80@15/3


    OCR Scan     		2N3265 2N3266 2N3846 2N3847 2N4002 2N4003 2N5539 2N6046 2N6047 2N6048 TO63 package 2N5250 transistor 114 2N3150 PDF

    n4111

    Abstract: 2N4211 2N3920 2N4116 2N4111 2N3851 2N3852 2N3853 2N3878 2N3879
    Text: PPC PRODUCTS CORPORATION SEMICONDUCTOR SPECIALIST 100 2N 3852 TO-59 60 2N 3853 TO-59 2N 3878 SAT. VOLTAGES Max. 'c V CE (A) V BE (A) (V) (V) 80 5 1 1 30 90 1 0.2 0.5 2 40 5 1 1 50 150 1 0.2 0.5 1 60 40 5 1 1 30 90 1 0.2 0.5 1 TO-66 120 50 7 5 0.5 50 200


    OCR Scan     		2N3851 2N3852 2N3853 2N3878 2N3879 2N3902 2N3917 2N3918 2N3920 2N3928 n4111 2N4211 2N4116 2N4111 PDF

    14241

    Abstract: TO63 package CY7C4201 CY7C4211 CY7C4221 CY7C4231 CY7C4241 CY7C4251 CY7C42X1 CY7C4421
    Text: fax id: 5409 •>* : CY7C4421/4201 /4211/4221 CY7C4231/4241/4251 .6 4 /2 5 6 /5 1 2 /1 K /2K /4K /8K x 9 S ynch ro no us FIFO s Functional Description Features • High-speed, low-power, first-in, first-out FIFO memories • 6 4 x 9 (CY7C4421) • 256 x 9 (CY7C4201)


    OCR Scan     		Y7C4421 CY7C4231 64/256/512/1K/2K/4K/8K CY7C4421) CY7C4201 512x9 CY7C4211 CY7C4221 CY7C4231) CY7C4241 14241 TO63 package CY7C4201 CY7C4211 CY7C4221 CY7C4241 CY7C4251 CY7C42X1 CY7C4421 PDF

    Untitled

    Abstract: No abstract text available
    Text: mÎ æ J E L E C T R O N I C S , IN C. / -11 COLLECTOR CURRENT = 5 AMPS NPN TYPES— Continued Device No 2N3751 Case TO1 1 1 /1 TO- 2N3752 2N3850 TO- 2N3851 2N3852 VcBO VCEO bus Volts Volts 80 60 V e BO Volts ’E Min hi Max 8 100 300 VCE 5 Vb e (sat) 1


    OCR Scan     		2N3751 2N3752 2N3850 2N3851 2N3852 O-111 O-114 PDF

    Untitled

    Abstract: No abstract text available
    Text: CRIMSON SE MICO ND UC TO R INC TT D eTJI e SIMD^ b 0DQ0337 4 • . 2 5 1 4 0 9 6 C R I M S O N S E M I C O N D U C T O R INC 99 D 00 3 3 7 ! D ' ' f ' 3 3 - 0/ ! EPITAXIAL PLANAR - TO -66 NPN PNP BUR10 BUR11 BUR12 BUX77 2N4910 2N4911 2N4912 2 N5427 2N5428


    OCR Scan     		0DQ0337 BUR10 BUR11 BUR12 BUX77 2N4910 2N4911 2N4912 N5427 2N5428 PDF

    Untitled

    Abstract: No abstract text available
    Text: POWER DARLINGTONS TYPE NO. PT MAXIMUM RATINGS @ 25'C BV cbo B V ceo BVebo Ic V V Watts V A Ic VCE A V Sat Test Voltages Conditions VCE Ib V be Ic I ebo V V A A ma hFE MIN MAX 2N2226 150 50 50 15 10 250 2000 4 6 3.5 4 9 .15 30 2N2227 150 100 100 15 10 250 2000 4


    OCR Scan     		2N2226 2N2227 2N2228 2N2229 2N2230 2N2231 2N3477 0Q43SC TWX-510-224-6582 O-114 PDF

    Untitled

    Abstract: No abstract text available
    Text: fax id: 5417 — CY7C4425V/4205V/4215V n v n n rn n CYPHhbb PRELIMINARY CY7C4225V/4235V/4245V = 64/256/512/1K/2K/4K x18 Low Voltage Synchronous FIFOs Features • 3.3V operation for low power consumption and easy integration into low voltage systems • High-speed, low-power, first-in first-out FIFO


    OCR Scan     		CY7C4425V/4205V/4215V CY7C4225V/4235V/4245V 64/256/512/1K/2K/4K CY7C4425V CY7C4205V) CY7C4215V) CY7C4225V) CY7C4235V) CY7C4245V) 67-MHz PDF

    2N2115

    Abstract: 2N2849-2 TO111 package 2N2150 2N2151 2N2657 2N2658 2N2849 2N2849-1 2N2849-3
    Text: _ B t U iU E L E C T R O N IC S , IN C .\- 9 COLLECTOR CURRENT = 5 AMPS NPN TYPES Device No Case 2N2150 TO111 TO111 TO-5 TO-5 TO-5 TO-5 TO111 TO-5 STUD TO-5 TO-5 TO111 TO-5 STUD TO-5 TO-5 TO111 TO-5 STUD TO-5 TO-5 TO111 TO-5 STUD TO-5 TO-5 TO111


    OCR Scan     		2N2150 2N2151 2N2657 2N2658 2N2849 2N2849-1 2N2849-2 2N2849-3 2N2850 2N2877 2N2115 TO111 package PDF

    2n5863

    Abstract: MJ2965 TO61 package 12J5 2N8307 2n3713 2N4901 2n3447
    Text: GENERAL TRANSISTOR CÔRP 54E D • 3=120001 OOOOObl 5 General Transistor Corporation CASE T -3 3 -0 1 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 213 673-8422 • Telex 65-3474 • FAX (213) 672-2905 T O -3 Ic(M A X ) a 2 - 5 0 A y\A^EO(sus) : ~ ^ 5 - 5 0 0 V


    OCR Scan     		0QD007fl T0-102 2n5863 MJ2965 TO61 package 12J5 2N8307 2n3713 2N4901 2n3447 PDF

    radiator 0,019

    Abstract: 2n5578
    Text: •■i ■1 Power Transistors Hometaxial-Base n-p-n Type Selection Charts cont’d hFE \ / a w~ (CMC1 CEO V CEX V VcE^^- V 'C E X -m A ' ‘c A V CE V Tem p.—°C 25 V CE V •c A 2N5578 FAMILY (n-p-n) High Current, High Power f y = 0.4 MHz min; P y = 300 W max


    OCR Scan     		2N5578 2N5575 2N5786 2N5783 2N5785 O-39/TO-205MD O-5/TO-205M 2N6103 radiator 0,019 PDF

    2N1724A

    Abstract: TO61 2N3442 2N1724 2N1725 2N3773 2N3878 2N3879 2N3446 2N5326
    Text: _1 4 E u M M e l e c t r o n ic s , in c . COLLECTOR CURRENT = 7 AMPS NPN TYPES Device No Case 2N3878 2N3879 2N5202 2N5326 TO -66 TO -66 T O -66 TO111/1 TO111/1 TO111/1 TO111/1 2N5346 2N5348 2N5349 v CBO Volts V c E O sus Volts vebo Volts hFE Min Max VCE


    OCR Scan     		2N3878 2N3879 2N5202 2N5326 2N5346 2N5348 2N5349 2N3488 2N3489 2N3490 2N1724A TO61 2N3442 2N1724 2N1725 2N3773 2N3446 PDF

    2N5286

    Abstract: 2N3171 2N3172 2N3196 2N3173 2N3174 2N3184 2N3183 2n5601 TO111 package
    Text: u l i J E L E C T R O N I C S , INC. -13 COLLECTOR CURRENT = 5 AMPS PNP TYPES—Continued Device No 2N3171 2N3172 2N3173 2N3174 2N3175 2N3176 2N3177 2N317S 2N3183 2N3184 2N3185 2N318* 2N3187 2N3188 2N3189 2N3190 2N3195 2N3196 2N3197 2N3198 2N3202 2N3203 2N3204


    OCR Scan     		2N3171 2N3172 2N3173 2N3174 2N3175 2N3176 2N3177 2N317S 2N3183 2N3184 2N5286 2N3196 2n5601 TO111 package PDF